The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lat...The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon.Many previously reported studies adopted many new structures to solve this problem.Additionally,the JTE structure is strongly sensitive to the ion implantation dose.Thus,GA-JTE,double-zone etched JTE structures,and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage.They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes.This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad.Presently,the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.展开更多
Perovskite-silicon tandem solar cells,capable of combin-ing high power conversion efficiency(PCE)with cost-effective-ness,are widely regarded as a leading and pivotal direction for the next generation photovoltaic tec...Perovskite-silicon tandem solar cells,capable of combin-ing high power conversion efficiency(PCE)with cost-effective-ness,are widely regarded as a leading and pivotal direction for the next generation photovoltaic technology[1,2].In two-terminal tandem structure,a crystalline silicon(c-Si)bottom cell is directly series-connected with a wide-bandgap(1.65−1.7 eV)(WBG)perovskite top cell,thereby leverage the comple-mentary spectral absorption properties of perovskite and silicon and improve the overall sunlight harvesting efficiency:high-energy photons are absorbed by the perovskite layer,while transmitted low-energy photons are captured by the c-Si subcell[3].Advancements in WBG perovskite composition and additive engineering,interface modification strategies,and optical and structural optimization have significantly enhanced the optoelectronic performance of such solar cells[4−10].Since the initial demonstration of rigid per-ovskite/c-Si tandems in 2015[11],nearly a decade of intensive development has enabled this architecture to achieve certi-fied PCEs to 34.9%[12,13],exceeds the Shockley−Queisser efficiency limit for single-junction solar cells[14].展开更多
基金financially supported by the Scientific and Technology Project of State Grid Corporation of China,Research on Dry Etching Forming Technology of Silicon Carbide Device,Project No.5500-202158437A-0-0-00.
文摘The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon.Many previously reported studies adopted many new structures to solve this problem.Additionally,the JTE structure is strongly sensitive to the ion implantation dose.Thus,GA-JTE,double-zone etched JTE structures,and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage.They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes.This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad.Presently,the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.
文摘Perovskite-silicon tandem solar cells,capable of combin-ing high power conversion efficiency(PCE)with cost-effective-ness,are widely regarded as a leading and pivotal direction for the next generation photovoltaic technology[1,2].In two-terminal tandem structure,a crystalline silicon(c-Si)bottom cell is directly series-connected with a wide-bandgap(1.65−1.7 eV)(WBG)perovskite top cell,thereby leverage the comple-mentary spectral absorption properties of perovskite and silicon and improve the overall sunlight harvesting efficiency:high-energy photons are absorbed by the perovskite layer,while transmitted low-energy photons are captured by the c-Si subcell[3].Advancements in WBG perovskite composition and additive engineering,interface modification strategies,and optical and structural optimization have significantly enhanced the optoelectronic performance of such solar cells[4−10].Since the initial demonstration of rigid per-ovskite/c-Si tandems in 2015[11],nearly a decade of intensive development has enabled this architecture to achieve certi-fied PCEs to 34.9%[12,13],exceeds the Shockley−Queisser efficiency limit for single-junction solar cells[14].
