By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical exp...By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical expressions describing the coupling between AGD parameters and temperature variation limits the broader application of this method, particularly in SiC modules that exhibit complicated device transient behaviors. To address this challenge, a mathematical model of the transient behavior of an SiC module is developed to investigate the relationship among AGD parameters, junction temperature, and switching performance. The analysis reveals that the impact of temperature on switching performance is directly linked to the duration of each gate resistance. Accordingly, a temperature-adaptive AGD for SiC MOSFET modules is proposed. Online junction temperature monitoring is achieved using turn-on delay detection, and the duration of each gate’s driving resistance is dynamically adjusted. The proposed temperature-adaptive AGD is validated experimentally using a commercial 1.2 kV/560 A SiC MOSFET at 600 V/200 A. Experimental results across a temperature range of 20 ℃ to 100 ℃ demonstrate that electrical stress variation remains within 15%, while loss variation does not exceed 10%.展开更多
Requirements of the Internet of things for the network includes the ability to monitor the equipment and devices.Nowadays,the reliability of a power electronics converter has raised concerns of both academia and indus...Requirements of the Internet of things for the network includes the ability to monitor the equipment and devices.Nowadays,the reliability of a power electronics converter has raised concerns of both academia and industry.In particular,power semiconductor devices are continuously exposed to excessive stress while being designed with high power handling capability and are considered as the most fragile component in power converters suffering from a high failure rate.Aiming to find an effective monitoring method which is also helpful for the Internet of Things and improve the reliability of a three-level neutral-point-clamped power inverter,an in-situ health monitoring method is proposed by harnessing the inverter operational characteristics and degradation sensitive electrical parameters to address the IGBT wire bonding faults.The zero voltage state provides an inherent redundant feature that allows for a power switch to be diagnosed during its normal operation in a neutralpoint-clamped power inverter.The proposed prognostic approach obtains both the wire bonding failure features and junction temperature from the terminals of an IGBT module,which is regarded as non-invasive on-line health monitoring.The system performance can be affected by the designated testing point and testing window,which is discussed and experimentally validated.The proposed technique allows unhealthy wire bonding in IGBT modules online monitoring during the operational period of the inverter.And the proposed in-situ health monitoring of IGBT modules can be used for the industrial Internet of things.展开更多
基金Supported by the National Natural Science Foundation of China (52177199).
文摘By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical expressions describing the coupling between AGD parameters and temperature variation limits the broader application of this method, particularly in SiC modules that exhibit complicated device transient behaviors. To address this challenge, a mathematical model of the transient behavior of an SiC module is developed to investigate the relationship among AGD parameters, junction temperature, and switching performance. The analysis reveals that the impact of temperature on switching performance is directly linked to the duration of each gate resistance. Accordingly, a temperature-adaptive AGD for SiC MOSFET modules is proposed. Online junction temperature monitoring is achieved using turn-on delay detection, and the duration of each gate’s driving resistance is dynamically adjusted. The proposed temperature-adaptive AGD is validated experimentally using a commercial 1.2 kV/560 A SiC MOSFET at 600 V/200 A. Experimental results across a temperature range of 20 ℃ to 100 ℃ demonstrate that electrical stress variation remains within 15%, while loss variation does not exceed 10%.
基金This work was supported by National Natural Science Foundation of China(U1834204).
文摘Requirements of the Internet of things for the network includes the ability to monitor the equipment and devices.Nowadays,the reliability of a power electronics converter has raised concerns of both academia and industry.In particular,power semiconductor devices are continuously exposed to excessive stress while being designed with high power handling capability and are considered as the most fragile component in power converters suffering from a high failure rate.Aiming to find an effective monitoring method which is also helpful for the Internet of Things and improve the reliability of a three-level neutral-point-clamped power inverter,an in-situ health monitoring method is proposed by harnessing the inverter operational characteristics and degradation sensitive electrical parameters to address the IGBT wire bonding faults.The zero voltage state provides an inherent redundant feature that allows for a power switch to be diagnosed during its normal operation in a neutralpoint-clamped power inverter.The proposed prognostic approach obtains both the wire bonding failure features and junction temperature from the terminals of an IGBT module,which is regarded as non-invasive on-line health monitoring.The system performance can be affected by the designated testing point and testing window,which is discussed and experimentally validated.The proposed technique allows unhealthy wire bonding in IGBT modules online monitoring during the operational period of the inverter.And the proposed in-situ health monitoring of IGBT modules can be used for the industrial Internet of things.
