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In-Memory Probabilistic Computing Using Gate-Tunable Layer Pseudospins in van der Waals Heterostructures
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作者 Jiao Xie Jun-Lin Xiong +2 位作者 Bin Cheng Shi-Jun Liang Feng Miao 《Chinese Physics Letters》 2025年第4期9-22,共14页
Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilist... Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilistic computing scheme based on the electrical manipulation of layer pseudospins in layered materials,by exploiting the interaction between real spins and layer pseudospins. 展开更多
关键词 layer pseudospinsexhibiting layered materialsby real spins probabilistic computing advancement future computing technologiesin electrical manipulation layer pseudospins memory computing gate tunable layer pseudospins
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Surfactant-assisted synthesis of semiconductor hybrid Cd/Hg-selenidostannates with enhanced optoelectronic and piezoelectric properties
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作者 Mohamed Saber Lassoued Yue-Qiao Hu +1 位作者 Ahmad Faizan Yan-Zhen Zheng 《Inorganic Chemistry Frontiers》 2025年第14期4428-4437,共10页
Multifunctional compounds have attracted significant attention due to their wide-ranging applications in advanced technologies.In this study,we synthesized two semiconductor hybrid Cd/Hg-selenidostannates,(H_(2)BPP)_(... Multifunctional compounds have attracted significant attention due to their wide-ranging applications in advanced technologies.In this study,we synthesized two semiconductor hybrid Cd/Hg-selenidostannates,(H_(2)BPP)_(2)CdSn_(3)Se_(9) and(H_(2)DMP)_(2)Hg_(4)Sn_(4)Se_(15),employing 1,3-bis(4-piperidinyl)propane and 1,5-diamino-2-methylpentane through a surfactant-assisted thermal method.Remarkably,these hybrid chalcogenides are highly soluble in DMF,facilitating the formation of smooth,pinhole-free thin films via a spin-coating method.(H_(2)BPP)_(2)CdSn_(3)Se_(9) and(H_(2)DMP)_(2)Hg_(4)Sn_(4)Se_(15) films exhibit exceptional stability under high humidity and heat,with semiconducting band gaps of 2.12 eV and 2.21 eV,respectively.These band gaps enable strong light absorption and charge carrier generation,which directly contribute to their significant photocurrent responses.Specifically,photocurrent measurements show Ilight values of 1.5μA cm^(-2) and 1μA cm^(-2) at 0.8 V for(H_(2)BPP)_(2)CdSn_(3)Se_(9) and(H_(2)DMP)_(2)Hg_(4)Sn_(4)Se_(15),notably higher than the 0.30μA cm^(-2) observed for the commercially available SnSe_(2) electrode under the same conditions.Building on these interesting electrical properties,(H_(2)BPP)_(2)CdSn_(3)Se_(9) also showed notable piezoelectric properties,resulting from its unique structural framework that supports both efficient charge transport and mechanical responsiveness.These promising stability and multifunctional characteristics highlight the potential of these hybrid selenidostannates for advanced optoelectronic and piezoelectric applications. 展开更多
关键词 advanced technologiesin optoelectronic properties multifunctional compounds surfactant assisted synthesis cd hg selenidostannates hybrid chalcogenides piezoelectric properties thin films v
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