Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking synaptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed t...Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking synaptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed to mimic the essential synaptic behaviors by exploiting the bipolar property of graphene and the ionic conductivity of Ion-Gel.The Ion-Gel dielectrics were deposited onto the graphene film by the spin coating process.We consider the top gate and graphene channel as a presynaptic and postsynaptic terminal,respectively.Basic synaptic functions were successfully mimicked,including the excitatory postsynaptic current(EPSC),the effect of spike amplitude and duration on EPSC,and paired-pulse facilitation(PPF).This work may facilitate the application of graphene synaptic transistors in flexible electronics.展开更多
The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing.Herein,a multifunctional synaptic transistor is constructed by u...The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing.Herein,a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and indium gallium arsenide(InGaAs)nanowires(NWs)hybrid heterojunction thin film as the active layer.Under illumination,the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine.The persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors,including excitatory postsynaptic current,long/short-term memory and Pavlovian learning.Furthermore,a high classification accuracy of 89.72%can be achieved through the single-layer-perceptron hardware-based neural network built from C8-BTBT/InGaAs NWs synaptic transistors.Thus,this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.展开更多
The development of large-area high-performance flexible photoelectronic synaptic devices has become a hot topic in the field of neuromorphic computing and artificial vision systems.In this work,we have successfully pr...The development of large-area high-performance flexible photoelectronic synaptic devices has become a hot topic in the field of neuromorphic computing and artificial vision systems.In this work,we have successfully prepared a large-area,ultra-flexible semiconducting single-walled carbon nanotubes(sc-SWCNTs)photoelectronic synaptic thin-film transistors(TFTs)array(33×34)using solution-processable AlO_(x)thin film as the dielectrics by roll-to-roll gravure printing.Our photoelectronic synaptic TFTs exhibit excellent electrical properties with high switching ratio(≥10^(5)),low subthreshold swing(73 mV·dec^(−1)),excellent photoresponse properties over a wide wavelength range(from 270 to 650 nm),sustained photoconductivity effect(only 26.7%drop after removing light source for 36,000 s)and remarkable mechanical reliability and flexibility(maintaining excellent electrical properties after bending more than 15,000 cycles with a bending radius of 5 mm).In addition,concepts such as multimodal optoelectronic synaptic plasticity,optical writing speed perception simulation,and human eye self-recovery model have been successfully demonstrated using printed flexible sc-SWCNTs photoelectronic neuromorphic TFTs arrays.More importantly,we systematically investigated the response characteristics of these devices under deep ultraviolet light stimulation and,for the first time,successfully simulated bio-inspired visual perception self-recovery including the dynamic transition of the visual system from clarity to blurriness and their self-recovery over time.This work indicates that our photoelectronic neuromorphic TFT devices have great practical potential in human-computer interaction,environment perception,and visual simulation.展开更多
The development of intrinsically stretchable organic electrochemical synaptic transistors(ISOESTs)based entirely on elastomeric materials is pivotal for advancing applications requiring neuromorphic functionality unde...The development of intrinsically stretchable organic electrochemical synaptic transistors(ISOESTs)based entirely on elastomeric materials is pivotal for advancing applications requiring neuromorphic functionality under significant mechanical deformation.This study presents ISOESTs capable of replicating a comprehensive range of synaptic behaviors,including excitatory postsynaptic currents(EPSCs),paired-pulse facilitation(PPF),and transitions from short-term memory(STM)to long-term memory(LTM).Remarkably,these synaptic characteristics were preserved even when the devices were subjected to 30%uniaxial strain,demonstrating exceptional mechanical robustness and functional stability.A pixelated 5×5 array of ISOESTs exhibited minimal device-to-device variation,underscoring the scalability and uniformity of the fabrication approach.To further illustrate their potential,a neurologically integrated electronic skin(e-skin)was fabricated,incorporating these ISOESTs to enable modulation of synaptic responses.The modulation of synaptic responses was strongly correlated with electrochemical analyses,establishing a robust operational framework for programmable neuromorphic systems.Comprehensive investigations into device fabrication,operation mechanisms,and integration strategies provide critical insights into the potential of these systems for next-generation applications in wearable electronics,soft robotics,neuro-prosthetics,and human–machine interfaces.This work represents a significant step toward realizing adaptive,biologically inspired electronic platforms capable of bridging the gap between engineered systems and living tissues.展开更多
Flexible synaptic devices,as cutting-edge electronic components designed to emulate biological synaptic functions,facilitate parallel information processing and memory storage,thereby significantly enhancing the speed...Flexible synaptic devices,as cutting-edge electronic components designed to emulate biological synaptic functions,facilitate parallel information processing and memory storage,thereby significantly enhancing the speed and efficiency of computational operations.Their inherent flexibility allows these devices to seamlessly integrate into a variety of complex environments and application scenarios,including wearable technology,smart skins,and biomedical sensors.Notably,three-terminal flexible synaptic transistors,which structurally resemble biological synapses,offer a more natural and precise emulation of diverse synaptic functionalities.In recent years,substantial progress has been made in the development of these transistors,marking a significant leap forward in neuromorphic electronics.This review comprehensively summarizes the latest advancements in flexible synaptic transistors,providing a systematic analysis of their operational mechanisms,material innovations,and applications in the field of neuromorphic perception systems.Furthermore,it offers insightful perspectives on the future opportunities and challenges that lie ahead for the continued evolution of flexible synaptic transistors.展开更多
Current synaptic characteristics focus on replicating basic biological operations,but developing devices that combine photoelectric responsiveness and multifunctional simulation remains challenging.An optoelectronic t...Current synaptic characteristics focus on replicating basic biological operations,but developing devices that combine photoelectric responsiveness and multifunctional simulation remains challenging.An optoelectronic transistor is presented,utilizing a PMHT∕Al_(2)O_(3)heterostructure for photoreception,memory storage,and computation.This artificial synaptic transistor processes optical and electrical signals efficiently,mimicking biological synapses.The work presents four logic functions:“AND”,“OR”,“NOR”,and“NAND”.It demonstrates electrical synaptic plasticity,optical synaptic plasticity,sunburned skin simulation,a photoelectric cooperative stimulation model for improving learning efficiency,and memory functions.The development of heterostructure synaptic transistors and their photoelectric response enhances their application in neuromorphic computation.展开更多
The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d...The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.展开更多
Photoelectric synaptic device is a promising candidate component in brain-inspired high-efficiency neuromorphic computing systems.Implementing neuromorphic computing with broad bandwidth is,however,challenging owing t...Photoelectric synaptic device is a promising candidate component in brain-inspired high-efficiency neuromorphic computing systems.Implementing neuromorphic computing with broad bandwidth is,however,challenging owing to the difficulty in realizing broadband characteristics with available photoelectric synaptic devices.Herein,taking advantage of the type-Ⅱ heterostructure formed between environmentally friendly CuInSe2 quantum dots and organic semiconductor,broadband photoelectric synaptic transistors(BPSTs)that can convert light signals ranging from ultraviolet(UV)to near-infrared(NIR)into post-synaptic currents are demonstrated.Essential synaptic functions,such as pair-pulse facilitation,the modulation of memory level,long-term potentiation/depression transition,dynamic filtering,and learning-experience behavior,are well emulated.More significantly,benefitting from broadband responses,information processing functions,including arithmetic computing and pattern recognition can also be simulated in a broadband spectral range from UV to NIR.Furthermore,the BPSTs exhibit obvious synaptic responses even at an ultralow operating voltage of−0.1 mV with an ultralow energy consumption of 75 aJ per event,and show their potential in flexible electronics.This study presents a pathway toward the future construction of brain-inspired neural networks for high-bandwidth neuromorphic computing utilizing energy-efficient broadband photoelectric devices.展开更多
In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information secu...In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information security strategies.Leverag-ing the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after read-ing,thereby guaranteeing data security.In this study,a reconfigurable ambipolar optoelectronic synaptic transistor based on poly(3-hexylthiophene)(P3HT)and poly[[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)](N2200)blend film was fabricated through solution-processed method.The resulting transistor exhib-ited a relatively large ON/OFF ratio of 10^(3) in both n-and p-type regions,and tunable photoconductivity after light illumination,particularly with green light.The photo-generated carriers could be effectively trapped under the gate bias,indicating its poten-tial application in mimicking synaptic behaviors.Furthermore,the synaptic plasticity,including volatile/non-volatile and excita-tory/inhibitory characteristics,could be finely modulated by electrical and optical stimuli.These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading.This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems.展开更多
Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor sol...Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.展开更多
We demonstrate a bipolar graphene/F_(16)CuPc synaptic transistor(GFST)with matched p-type and n-type bipolar properties,which emulates multiplexed neurotransmission of the release of two excitatory neurotransmitters i...We demonstrate a bipolar graphene/F_(16)CuPc synaptic transistor(GFST)with matched p-type and n-type bipolar properties,which emulates multiplexed neurotransmission of the release of two excitatory neurotransmitters in graphene and F_(16)CuPc channels,separately.This process facilitates fast-switching plasticity by altering charge carriers in the separated channels.The complementary neural network for image recognition of Fashion-MNIST dataset was constructed using the matched relative amplitude and plasticity properties of the GFST dominated by holes or electrons to improve the weight regulation and recognition accuracy,achieving a pattern recognition accuracy of 83.23%.These results provide new insights to the construction of future neuromorphic systems.展开更多
Artificial synaptic devices hold great potential in building neuromorphic computers.Due to the unique morphological features,twodimensional organic semiconductors at the monolayer limit show interesting properties whe...Artificial synaptic devices hold great potential in building neuromorphic computers.Due to the unique morphological features,twodimensional organic semiconductors at the monolayer limit show interesting properties when acting as the active layers for organic field-effect transistors.Here,organic synaptic transistors are prepared with 1,4-bis((5’-hexyl-2,2’-bithiophen-5-yl)ethyl)benzene(HTEB)monolayer molecular crystals.Functions similar to biological synapses,including excitatory postsynaptic current(EPSC),pair-pulse facilitation,and short/long-term memory,have been realized.The synaptic device achieves the minimum power consumption of 4.29 fJ at low drain voltage of−0.01 V.Moreover,the HTEB synaptic device exhibits excellent long-term memory with 109 s EPSC estimated retention time.Brain-like functions such as dynamic learning-forgetting process and visual noise reduction are demonstrated by nine devices.The unique morphological features of the monolayer molecular semiconductors help to reveal the device working mechanism,and the synaptic behaviors of the devices can be attributed to oxygen induced energy level.This work shows the potential of artificial neuroelectronic devices based on organic monolayer molecular crystals.展开更多
Neurologic function implemented soft organic electronic skin holds promise for wide range of applications,such as skin prosthetics,neurorobot,bioelectronics,human-robotic interaction(HRI),etc.Here,we report the develo...Neurologic function implemented soft organic electronic skin holds promise for wide range of applications,such as skin prosthetics,neurorobot,bioelectronics,human-robotic interaction(HRI),etc.Here,we report the development of a fully rubbery synaptic transistor which consists of all-organic materials,which shows unique synaptic characteristics existing in biological synapses.These synaptic characteristics retained even under mechanical stretch by 30%.We further developed a neurological electronic skin in a fully rubbery format based on two mechanoreceptors(for synaptic potentiation or depression)of pressure-sensitive rubber and an all-organic synaptic transistor.By converting tactile signals into Morse Code,potentiation and depression of excitatory postsynaptic current(EPSC)signals allow the neurological electronic skin on a human forearm to communicate with a robotic hand.The collective studies on the materials,devices,and their characteristics revealed the fundamental aspects and applicability of the all-organic synaptic transistor and the neurological electronic skin.展开更多
In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can ef...In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic plasticity.The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term potentiation.Furthermore,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced.These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.展开更多
Photonic synaptic transistors are promising neuromorphic computing systems that are expected to circumvent the intrinsic limitations of von Neumann-based computation.The design and construction of photonic synaptic tr...Photonic synaptic transistors are promising neuromorphic computing systems that are expected to circumvent the intrinsic limitations of von Neumann-based computation.The design and construction of photonic synaptic transistors with a facile fabrication process and highefficiency information processing ability are highly desired,while it remains a tremendous challenge.Herein,a new approach based on spin coating of a blend of CsPbBr_(3) perovskite quantum dot(QD)and PDVT-10 conjugated polymer is reported for the fabrication of photonic synaptic transistors.The combination of flat surface,outstanding optical absorption,and remarkable charge transporting performance contributes to high-efficiency photon-to-electron conversion for such perovskite-based synapses.High-performance photonic synaptic transistors are thus fabricated with essential synaptic functionalities,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),and long-term memory.By utilizing the photonic potentiation and electrical depression features,perovskite-based photonic synaptic transistors are also explored for neuromorphic computing simulations,showing high pattern recognition accuracy of up to 89.98%,which is one of the best values reported so far for synaptic transistors used in pattern recognition.This work provides an effective and convenient pathway for fabricating perovskite-based neuromorphic systems with high pattern recognition accuracy.展开更多
Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical co...Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.展开更多
An indium-zinc-oxide （IZO） based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high e...An indium-zinc-oxide （IZO） based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of ～14 cm2 V^-1 s^-1 and a low subthreshold swing of ～80 mV/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and short- term depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.展开更多
Recent years has seen increasing interest in building artificial synaptic devices to emulate the computation performed by biological synapses.Biological synapses are functional links between neurons,through which info...Recent years has seen increasing interest in building artificial synaptic devices to emulate the computation performed by biological synapses.Biological synapses are functional links between neurons,through which information is transmitted in the neuron network.The information can be stored and processed simultaneously in the same synapse through tuning synaptic weight,which is defined as the strength of the correlation between展开更多
With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous sys...With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.展开更多
Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. Th...Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. This letter reports a dropout neuronal unit(1R1T-DNU) based on one memristor–one electrolyte-gated transistor with an ultralow energy consumption of 25 p J/spike. A dropout neural network is constructed based on such a device and has been verified by MNIST dataset, demonstrating high recognition accuracies(> 90%) within a large range of dropout probabilities up to40%. The running time can be reduced by increasing dropout probability without a significant loss in accuracy. Our results indicate the great potential of introducing such 1R1T-DNUs in full-hardware neural networks to enhance energy efficiency and to solve the overfitting problem.展开更多
文摘Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking synaptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed to mimic the essential synaptic behaviors by exploiting the bipolar property of graphene and the ionic conductivity of Ion-Gel.The Ion-Gel dielectrics were deposited onto the graphene film by the spin coating process.We consider the top gate and graphene channel as a presynaptic and postsynaptic terminal,respectively.Basic synaptic functions were successfully mimicked,including the excitatory postsynaptic current(EPSC),the effect of spike amplitude and duration on EPSC,and paired-pulse facilitation(PPF).This work may facilitate the application of graphene synaptic transistors in flexible electronics.
基金This work is supported by the National Natural Science Foundation of China(No 52173192 and No 61975241)the Huxiang Youth Talent Program of Hunan Province(2020RC3010)+3 种基金the Science and Technology Innovation Program of Hunan Province(2020RC4004)the Special Funding for the Construction of Innovative Provinces in Hunan Province(2020GK2024)the National Key Research and Development Program of China(2017YFA0206600)P.X.also thanks a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region,China(CityU RFS2021-1S04).
文摘The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing.Herein,a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and indium gallium arsenide(InGaAs)nanowires(NWs)hybrid heterojunction thin film as the active layer.Under illumination,the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine.The persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors,including excitatory postsynaptic current,long/short-term memory and Pavlovian learning.Furthermore,a high classification accuracy of 89.72%can be achieved through the single-layer-perceptron hardware-based neural network built from C8-BTBT/InGaAs NWs synaptic transistors.Thus,this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.
基金supported by the National Key Research and Development Program of China(No.2020YFA0714700)the National Natural Science Foundation of China(Nos.62274174 and 52173192)+2 种基金Basic Research Program of Jiangsu(No.BK20232009)a fellowship from the China Postdoctoral Science Foundation(NO.2023M742559)the Cooperation Project of Vacuum Interconnect Research Facility(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(No.F2208).
文摘The development of large-area high-performance flexible photoelectronic synaptic devices has become a hot topic in the field of neuromorphic computing and artificial vision systems.In this work,we have successfully prepared a large-area,ultra-flexible semiconducting single-walled carbon nanotubes(sc-SWCNTs)photoelectronic synaptic thin-film transistors(TFTs)array(33×34)using solution-processable AlO_(x)thin film as the dielectrics by roll-to-roll gravure printing.Our photoelectronic synaptic TFTs exhibit excellent electrical properties with high switching ratio(≥10^(5)),low subthreshold swing(73 mV·dec^(−1)),excellent photoresponse properties over a wide wavelength range(from 270 to 650 nm),sustained photoconductivity effect(only 26.7%drop after removing light source for 36,000 s)and remarkable mechanical reliability and flexibility(maintaining excellent electrical properties after bending more than 15,000 cycles with a bending radius of 5 mm).In addition,concepts such as multimodal optoelectronic synaptic plasticity,optical writing speed perception simulation,and human eye self-recovery model have been successfully demonstrated using printed flexible sc-SWCNTs photoelectronic neuromorphic TFTs arrays.More importantly,we systematically investigated the response characteristics of these devices under deep ultraviolet light stimulation and,for the first time,successfully simulated bio-inspired visual perception self-recovery including the dynamic transition of the visual system from clarity to blurriness and their self-recovery over time.This work indicates that our photoelectronic neuromorphic TFT devices have great practical potential in human-computer interaction,environment perception,and visual simulation.
基金supported by a New Faculty Research Grant of Pusan National University,2023support from the National Research Foundation of Korea(NRF)(Nos.RS-2023-00222166 and RS-2025-00558955).
文摘The development of intrinsically stretchable organic electrochemical synaptic transistors(ISOESTs)based entirely on elastomeric materials is pivotal for advancing applications requiring neuromorphic functionality under significant mechanical deformation.This study presents ISOESTs capable of replicating a comprehensive range of synaptic behaviors,including excitatory postsynaptic currents(EPSCs),paired-pulse facilitation(PPF),and transitions from short-term memory(STM)to long-term memory(LTM).Remarkably,these synaptic characteristics were preserved even when the devices were subjected to 30%uniaxial strain,demonstrating exceptional mechanical robustness and functional stability.A pixelated 5×5 array of ISOESTs exhibited minimal device-to-device variation,underscoring the scalability and uniformity of the fabrication approach.To further illustrate their potential,a neurologically integrated electronic skin(e-skin)was fabricated,incorporating these ISOESTs to enable modulation of synaptic responses.The modulation of synaptic responses was strongly correlated with electrochemical analyses,establishing a robust operational framework for programmable neuromorphic systems.Comprehensive investigations into device fabrication,operation mechanisms,and integration strategies provide critical insights into the potential of these systems for next-generation applications in wearable electronics,soft robotics,neuro-prosthetics,and human–machine interfaces.This work represents a significant step toward realizing adaptive,biologically inspired electronic platforms capable of bridging the gap between engineered systems and living tissues.
基金supported by the National Key Research and Development Program of China(2021YFA0717900)the National Natural Science Foundation of China(52273190,52121002).
文摘Flexible synaptic devices,as cutting-edge electronic components designed to emulate biological synaptic functions,facilitate parallel information processing and memory storage,thereby significantly enhancing the speed and efficiency of computational operations.Their inherent flexibility allows these devices to seamlessly integrate into a variety of complex environments and application scenarios,including wearable technology,smart skins,and biomedical sensors.Notably,three-terminal flexible synaptic transistors,which structurally resemble biological synapses,offer a more natural and precise emulation of diverse synaptic functionalities.In recent years,substantial progress has been made in the development of these transistors,marking a significant leap forward in neuromorphic electronics.This review comprehensively summarizes the latest advancements in flexible synaptic transistors,providing a systematic analysis of their operational mechanisms,material innovations,and applications in the field of neuromorphic perception systems.Furthermore,it offers insightful perspectives on the future opportunities and challenges that lie ahead for the continued evolution of flexible synaptic transistors.
基金National Natural Science Foundation of China(6257030508)Natural Science Foundation of Heilongjiang Province,China(LH2023F045)Basic Scientific Research Funds of Heilongjiang Universities Special Fund Project of Heilongjiang University(2023-KYYWF-1434)。
文摘Current synaptic characteristics focus on replicating basic biological operations,but developing devices that combine photoelectric responsiveness and multifunctional simulation remains challenging.An optoelectronic transistor is presented,utilizing a PMHT∕Al_(2)O_(3)heterostructure for photoreception,memory storage,and computation.This artificial synaptic transistor processes optical and electrical signals efficiently,mimicking biological synapses.The work presents four logic functions:“AND”,“OR”,“NOR”,and“NAND”.It demonstrates electrical synaptic plasticity,optical synaptic plasticity,sunburned skin simulation,a photoelectric cooperative stimulation model for improving learning efficiency,and memory functions.The development of heterostructure synaptic transistors and their photoelectric response enhances their application in neuromorphic computation.
基金supported by the National Key Research and Development Program of China(2021YFA1101303)the National Natural Science Foundation of China(62374115)the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096).
文摘The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.
基金supported by the National Key Research and Development Program of China(No.2021YFA 1101303)the National Natural Science Foundation of China(Nos.62074111 and 62088101)+2 种基金Major Program of National Natural Science Foundation of China(No.82293643)the Science&Technology Foundation of Shanghai(No.20JC1415600)the Innovation Program of Shanghai Municipal Education Commission(No.2021-01-07-00-07-E00096)。
文摘Photoelectric synaptic device is a promising candidate component in brain-inspired high-efficiency neuromorphic computing systems.Implementing neuromorphic computing with broad bandwidth is,however,challenging owing to the difficulty in realizing broadband characteristics with available photoelectric synaptic devices.Herein,taking advantage of the type-Ⅱ heterostructure formed between environmentally friendly CuInSe2 quantum dots and organic semiconductor,broadband photoelectric synaptic transistors(BPSTs)that can convert light signals ranging from ultraviolet(UV)to near-infrared(NIR)into post-synaptic currents are demonstrated.Essential synaptic functions,such as pair-pulse facilitation,the modulation of memory level,long-term potentiation/depression transition,dynamic filtering,and learning-experience behavior,are well emulated.More significantly,benefitting from broadband responses,information processing functions,including arithmetic computing and pattern recognition can also be simulated in a broadband spectral range from UV to NIR.Furthermore,the BPSTs exhibit obvious synaptic responses even at an ultralow operating voltage of−0.1 mV with an ultralow energy consumption of 75 aJ per event,and show their potential in flexible electronics.This study presents a pathway toward the future construction of brain-inspired neural networks for high-bandwidth neuromorphic computing utilizing energy-efficient broadband photoelectric devices.
基金the National Natural-Science Foundation of China(Grant No.62304137)Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515012479,2024A1515011737,and 2024A1515010006)+4 种基金the Science and Technology Innovation Commission of Shenzhen(Grant No.JCYJ20220818100206013)RSC Researcher Collaborations Grant(Grant No.C23-2422436283)State Key Laboratory of Radio Frequency Heterogeneous Integration(Independent Scientific Research Program No.2024010)the Project on Frontier and Interdisciplinary Research Assessment,Academic Divisions of the Chinese Academy of Sciences(Grant No.XK2023XXA002)NTUT-SZU Joint Research Program.
文摘In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information security strategies.Leverag-ing the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after read-ing,thereby guaranteeing data security.In this study,a reconfigurable ambipolar optoelectronic synaptic transistor based on poly(3-hexylthiophene)(P3HT)and poly[[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)](N2200)blend film was fabricated through solution-processed method.The resulting transistor exhib-ited a relatively large ON/OFF ratio of 10^(3) in both n-and p-type regions,and tunable photoconductivity after light illumination,particularly with green light.The photo-generated carriers could be effectively trapped under the gate bias,indicating its poten-tial application in mimicking synaptic behaviors.Furthermore,the synaptic plasticity,including volatile/non-volatile and excita-tory/inhibitory characteristics,could be finely modulated by electrical and optical stimuli.These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading.This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems.
基金supported by the National Key Research and Development program of China (Nos. 2024YFA1410700 and 2021YFA1200700)the National Natural Science Foundation of China (Nos. T2222025, 62174053, 62474065 and 52372120)+3 种基金the Natural Science Foundation of Chongqing (CSTB2024NSCQ-JQX0005)the Shanghai Science and Technology Innovation Action Plan (Nos. 24QA2702300 and 24YF2710400)the National Postdoctoral Program (GZB20240225)the Fundamental Research Funds for the Central Universities。
文摘Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.
基金supported by the Shenzhen Science and Technology Program(No.JCYJ20210324121002008)the National Science Fund for Distinguished Young Scholars of China(No.T2125005)+5 种基金the National Key R&D Program of China(Nos.2022YFE0198200,2022YFA1204500,and 2022YFA1204504)the Natural Science Foundation of Tianjin(Nos.22JCYBJC01290 and 23JCQNJC01440)the Key Project of Natural Science Foundation of Tianjin(No.22JCZDJC00120)the Fundamental Research Funds for the Central Universities,Nankai University(Nos.BEG124901 and BEG124401)the Guangdong Basic and Applied Basic Research Foundation(No.2023A1515110319)the Key Science and Technology Program of Henan Province(No.242102210171).
文摘We demonstrate a bipolar graphene/F_(16)CuPc synaptic transistor(GFST)with matched p-type and n-type bipolar properties,which emulates multiplexed neurotransmission of the release of two excitatory neurotransmitters in graphene and F_(16)CuPc channels,separately.This process facilitates fast-switching plasticity by altering charge carriers in the separated channels.The complementary neural network for image recognition of Fashion-MNIST dataset was constructed using the matched relative amplitude and plasticity properties of the GFST dominated by holes or electrons to improve the weight regulation and recognition accuracy,achieving a pattern recognition accuracy of 83.23%.These results provide new insights to the construction of future neuromorphic systems.
基金the National Natural Science Foundation of China(No.62074111)the Science and Technology Foundation of Shanghai(Nos.19JC1412402 and 20JC1415600)+3 种基金Shanghai Municipal Science and Technology Major Project(No.2021SHZDZX0100)Shanghai Municipal Commission of Science and Technology Project(No.19511132101)the Chinese Academy of Sciences(Hundred Talents Plan),the China Postdoctoral Science Foundation funded project(No.2019M660807)the support of the Fundamental Research Funds for the Central Universities.
文摘Artificial synaptic devices hold great potential in building neuromorphic computers.Due to the unique morphological features,twodimensional organic semiconductors at the monolayer limit show interesting properties when acting as the active layers for organic field-effect transistors.Here,organic synaptic transistors are prepared with 1,4-bis((5’-hexyl-2,2’-bithiophen-5-yl)ethyl)benzene(HTEB)monolayer molecular crystals.Functions similar to biological synapses,including excitatory postsynaptic current(EPSC),pair-pulse facilitation,and short/long-term memory,have been realized.The synaptic device achieves the minimum power consumption of 4.29 fJ at low drain voltage of−0.01 V.Moreover,the HTEB synaptic device exhibits excellent long-term memory with 109 s EPSC estimated retention time.Brain-like functions such as dynamic learning-forgetting process and visual noise reduction are demonstrated by nine devices.The unique morphological features of the monolayer molecular semiconductors help to reveal the device working mechanism,and the synaptic behaviors of the devices can be attributed to oxygen induced energy level.This work shows the potential of artificial neuroelectronic devices based on organic monolayer molecular crystals.
基金support by the Office of Naval Research grant(N00014-18-1-2338)under Young Investigator Program,the National Science Foundation grants of CAREER(1554499),EFRI(1935291),and CPS(1931893).
文摘Neurologic function implemented soft organic electronic skin holds promise for wide range of applications,such as skin prosthetics,neurorobot,bioelectronics,human-robotic interaction(HRI),etc.Here,we report the development of a fully rubbery synaptic transistor which consists of all-organic materials,which shows unique synaptic characteristics existing in biological synapses.These synaptic characteristics retained even under mechanical stretch by 30%.We further developed a neurological electronic skin in a fully rubbery format based on two mechanoreceptors(for synaptic potentiation or depression)of pressure-sensitive rubber and an all-organic synaptic transistor.By converting tactile signals into Morse Code,potentiation and depression of excitatory postsynaptic current(EPSC)signals allow the neurological electronic skin on a human forearm to communicate with a robotic hand.The collective studies on the materials,devices,and their characteristics revealed the fundamental aspects and applicability of the all-organic synaptic transistor and the neurological electronic skin.
基金the by the Natural Science Foundation of Shandong Province,China(ZR2020QF104)Key Research and Development Program of Shandong Province,China(2019GGX102067).
文摘In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic plasticity.The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term potentiation.Furthermore,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced.These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
基金supported by the Ministry of Science and Technology of the People’s Republic of China(2018YFA0703200)the National Natural Science Foundation of China(91833306,51633006,51703160,51733004,51725304,and 52003189)Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ130 and 2021ZZ129)。
文摘Photonic synaptic transistors are promising neuromorphic computing systems that are expected to circumvent the intrinsic limitations of von Neumann-based computation.The design and construction of photonic synaptic transistors with a facile fabrication process and highefficiency information processing ability are highly desired,while it remains a tremendous challenge.Herein,a new approach based on spin coating of a blend of CsPbBr_(3) perovskite quantum dot(QD)and PDVT-10 conjugated polymer is reported for the fabrication of photonic synaptic transistors.The combination of flat surface,outstanding optical absorption,and remarkable charge transporting performance contributes to high-efficiency photon-to-electron conversion for such perovskite-based synapses.High-performance photonic synaptic transistors are thus fabricated with essential synaptic functionalities,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),and long-term memory.By utilizing the photonic potentiation and electrical depression features,perovskite-based photonic synaptic transistors are also explored for neuromorphic computing simulations,showing high pattern recognition accuracy of up to 89.98%,which is one of the best values reported so far for synaptic transistors used in pattern recognition.This work provides an effective and convenient pathway for fabricating perovskite-based neuromorphic systems with high pattern recognition accuracy.
基金Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0303604 and 2019YFA0308500)the National Natural Science Foundation of China(Grant Nos.11674385,11404380,11721404,and 11874412)+1 种基金the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2018008)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDJSSW-SLH020).
文摘Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.
基金supported by the National Program on Key Basic Research Project (No.2012CB933004)the Zhejiang Provincial Natural Science Foundation of China (No.LY14A040009)the Ningbo Natural Science Foundation (No.2013A610001)
文摘An indium-zinc-oxide （IZO） based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of ～14 cm2 V^-1 s^-1 and a low subthreshold swing of ～80 mV/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and short- term depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.
基金supported by the National Natural Science Foundation of Chinathe Ministry of Science and Technology of Chinathe Chinese Academy of Sciences
文摘Recent years has seen increasing interest in building artificial synaptic devices to emulate the computation performed by biological synapses.Biological synapses are functional links between neurons,through which information is transmitted in the neuron network.The information can be stored and processed simultaneously in the same synapse through tuning synaptic weight,which is defined as the strength of the correlation between
基金financially supported by the National Natural Science Foundation of China(52073031,22008151)the National Key Research and Development Program of China(2021YFB3200304)+2 种基金Beijing Nova Program(Z211100002121148)Fundamental Research Funds for the Central Universities(E0EG6801X2)the‘Hundred Talents Program’of the Chinese Academy of Sciences。
文摘With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1202600 and 2023YFE0208600)in part by the National Natural Science Foundation of China (Grant Nos. 62174082, 92364106, 61921005, 92364204, and 62074075)。
文摘Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. This letter reports a dropout neuronal unit(1R1T-DNU) based on one memristor–one electrolyte-gated transistor with an ultralow energy consumption of 25 p J/spike. A dropout neural network is constructed based on such a device and has been verified by MNIST dataset, demonstrating high recognition accuracies(> 90%) within a large range of dropout probabilities up to40%. The running time can be reduced by increasing dropout probability without a significant loss in accuracy. Our results indicate the great potential of introducing such 1R1T-DNUs in full-hardware neural networks to enhance energy efficiency and to solve the overfitting problem.
