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Switching effects in superconductor/ferromagnet/superconductor graphene junctions
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作者 李晓薇 刘丹 鲍艳辉 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第12期456-460,共5页
The Josephson effect in the superconductor/ferromagnet/superconductor (SFS) graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes (DBdG) formalism. It is shown that the SFS graphene junction ... The Josephson effect in the superconductor/ferromagnet/superconductor (SFS) graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes (DBdG) formalism. It is shown that the SFS graphene junction drives 0–π transition with the increasing of p=h0L/vF?, which captures the effects of both the exchange field and the length of the junction; the spin-down current is dominant. The 0 state is stable for p 〈 pc (critical value pc ≈ 0.80) and the π state is stable for p 〉 pc, where the free energy minima are at φg=0 and φg=π, respectively. The coexistence of the 0 and π states appears in the vicinity of pc. 展开更多
关键词 superconductor junction grapheme switching effect
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Valley switch effect in an α-T_(3) lattice-based superconducting interferometer
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作者 Ya-Jun Wei Jun Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第11期372-377,共6页
Dirac electrons possess a valley degree of freedom,which is currently under investigation as a potential information carrier.We propose an approach to generate and manipulate the valley-switching current(VSC)through A... Dirac electrons possess a valley degree of freedom,which is currently under investigation as a potential information carrier.We propose an approach to generate and manipulate the valley-switching current(VSC)through Andreev reflection using an interferometer-based superconductor hybrid junction.The interferometer comprises a ring-shaped structure formed by topological kink states in the a-T_(3) lattice via carefully designed electrostatic potentials.Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron.Furthermore,we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter a.The former alters the dynamic phase of electrons while the latter provides an a-dependent Berry phase,both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC,crucial for advancements in valleytronics. 展开更多
关键词 valley switch effect valleytronics Andreev reflection a-T_(3)lattice
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Switching effect on a two prey-one predator system with strong Allee effect incorporating prey refuge
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作者 Sangeeta Saha Guruprasad Samanta 《International Journal of Biomathematics》 SCIE 2024年第2期1-50,共50页
In an environment,the food chains are balanced by the prey-predator interactions.When a predator species is provided with more than one prey population,it avails the option of prey switching between prey species accor... In an environment,the food chains are balanced by the prey-predator interactions.When a predator species is provided with more than one prey population,it avails the option of prey switching between prey species according to their availability.So,prey switching of predators mainly helps to increase the overall growth rate of a predator species.In this work,we have proposed a two prey-one predator system where the predator population adopts switching behavior between two prey species at the time of consumption.Both the prey population exhibit a strong Allee effect and the predator population is considered to be a generalist one.The proposed system is biologically well-defined as the system variables are positive and do not increase abruptly with time.The local stability analysis reveals that all the predator-free equilibria are saddle points whereas the prey-free equilibrium is always stable.The intrinsic growth rates of prey,the strong Allee parameters,and the prey refuge parameters are chosen to be the controlling parameters here.The numerical simulation reveals that in absence of one prey,the other prey refuge parameter can change the system dynamics by forming a stable or unstable limit cycle.Moreover,a situation of bi-stability,tri-stability,or even multi-stability of equilibrium points occurs in this system.As in presence of the switching effect,the predator chooses prey according to their abundance,so,increasing refuge in one prey population decreases the count of the second prey population.It is also observed that the count of predator population reaches a comparatively higher value even if they get one prey population at its fullest quantity and only a portion of other prey species.So,in the scarcity of one prey species,switching to the other prey is beneficial for the growth of the predator population. 展开更多
关键词 Prey-predator model switching effect strong Allee effect prey refuge
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Optical simulation of in-plane-switching blue phase liquid crystal display using the finite-difference time-domain method 被引量:1
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作者 窦虎 马红梅 孙玉宝 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期117-121,共5页
The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the ... The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the finite-difference timedomain method,which is used to directly solve Maxwell's equations,can consider the lateral variation of the refractive index and obtain an accurate convergence effect.The simulation results show that e-rays and o-rays bend in different directions when the in-plane switching blue phase liquid crystal display is driven by the operating voltage.The finitedifference time-domain method should be used when the distribution of the liquid crystal in the liquid crystal display has a large lateral change. 展开更多
关键词 finite-difference time-domain method blue phase liquid crystal display in-plane switching convergence effect
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The nonlocal transport and switch effect in light-and electric-controlled silicene–superconductor hybrid structure
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作者 Fenghua Qi Jun Cao +1 位作者 Jie Cao Lifa Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第12期121-126,共6页
We theoretically investigate the influence of off-resonant circularly polarized light field and perpendicular electric field on the quantum transport in a monolayer silicene-based normal/superconducting/normal junctio... We theoretically investigate the influence of off-resonant circularly polarized light field and perpendicular electric field on the quantum transport in a monolayer silicene-based normal/superconducting/normal junction.Owing to the tunable band structure of silicene,a pure crossed Andreev reflection process can be realized under the optical and electrical coaction.Moreover,a switch effect among the exclusive crossed Andreev reflection,the exclusive elastic cotunneling and the exclusive Andreev reflection,where the former two are the nonlocal transports and the third one is the local transport,can be obtained in our system by the modulation of the electric and light fields.In addition,the influence of the relevant parameters on the nonlocal and local transports is calculated and analyzed as well. 展开更多
关键词 switch effect SILICENE crossed Andreev reflection
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Three-dimension micro magnetic detector based on GMI effect
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作者 魏双成 邓甲昊 +1 位作者 韩超 杨雨迎 《Journal of Beijing Institute of Technology》 EI CAS 2014年第2期143-146,共4页
The giant magneto-impedance(GMI)effect of amorphous wire was analyzed theoretically.The amorphous wire had strong GMI effect in the stimulation of sharp pulse of 680kHz and18 mV.A pulse generator was designed to pro... The giant magneto-impedance(GMI)effect of amorphous wire was analyzed theoretically.The amorphous wire had strong GMI effect in the stimulation of sharp pulse of 680kHz and18 mV.A pulse generator was designed to provide high frequency pulse to a magnetic impedance(MI)element.The induced voltage on the pickup coil wound on the amorphous wire was sampled and held with a detect circuit using analog switch.A stable magnetic sensor was constructed.A three-dimension micro magnetic field detector was designed with a central controller MSP430F449.High stability and sensitivity were obtained in the MI sensor with the detect circuit.Experiment results showed that the resolution of the detector was 1nT in the full scale of±2 Oe and the detector worked stably from the room temperature to about 80℃.A small ferromagnetic target was detected by the three-dimension detector in laboratory environment without magnetic shielding.The target moving direction was ascertained with the wave shape of axis parallel in that direction. 展开更多
关键词 giant magneto-impedance(GMI)effect amorphous wire three dimension detector pulse generator analog switch
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Flux-to-voltage characteristic simulation of superconducting nanowire interference device
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作者 Xing-Yu Zhang Yong-Liang Wang +4 位作者 Chao-Lin Lv Li-Xing You Hao Li Zhen Wang Xiao-Ming Xie 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第9期553-558,共6页
Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices,we propose a superconducting nanowire interference device in this study,which is a combination of parallel ultrathin superconduc... Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices,we propose a superconducting nanowire interference device in this study,which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor.A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device.The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility.Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices. 展开更多
关键词 superconducting nanowire switching effect flux-to-voltage conversion interference device
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Non-equilibrium effect in the allosteric regulation of the bacterial flagellar switch
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作者 Yuan Junhua (袁军华) Zhang Rongjing (张榕京) 《Science Foundation in China》 CAS 2017年第3期48-48,共1页
Subject Code:A02With funding support from the National Natural Science Foundation of China,the research group led by Prof.Yuan Junhua(袁军华)and Zhang Rongjing(张榕京)from the University of Science and Technology of C... Subject Code:A02With funding support from the National Natural Science Foundation of China,the research group led by Prof.Yuan Junhua(袁军华)and Zhang Rongjing(张榕京)from the University of Science and Technology of China(USTC)has discovered non-equilibrium effect in the regulation of the bacterial flagellar switch, 展开更多
关键词 Non-equilibrium effect in the allosteric regulation of the bacterial flagellar switch
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Recent development of studies on the mechanism of resistive memories in several metal oxides 被引量:2
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作者 TIAN XueZeng WANG LiFen +5 位作者 LI XiaoMin WEI JiaKe YANG ShiZe XU Zhi WANG WenLong BAI XueDong 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2013年第12期2361-2369,共9页
Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performanc... Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications. 展开更多
关键词 resistive switching effect valence change memory electrode engineering in-situ TEM
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