The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical appl...The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical application.In this study,by utilizing first-principles calculations and semi-classical Boltzmann transport theory,it is found that hole doping with an experimentally achievable concentration of 1.83×10^(14)cm^(-2)can reduce the lattice thermal conductivity of monolayer MoS_(2) from 151.79 W·m^(-1)·K^(-1)to 12.19 W·m^(-1)·K^(-1),achieving a high thermal switching ratio of 12.5.The achieved switching ratio significantly surpasses previously reported values,including those achieved by extreme strain methods.This phenomenon mainly arises from the enhanced lattice anharmonicity,which is primarily contributed by the S atoms.These results indicate that hole doping is an effective method for tuning the lattice thermal conductivity of materials,and demonstrate that monolayer MoS_(2) is a potential candidate material for thermal switches.展开更多
The high-speed on/off valve(HSV)serves as the fundamental component responsible for generating discrete fluids within digital hydraulic systems.As the switching frequency of the HSV increases,the properties of the gen...The high-speed on/off valve(HSV)serves as the fundamental component responsible for generating discrete fluids within digital hydraulic systems.As the switching frequency of the HSV increases,the properties of the generated discrete fluid approach those of continuous fluids.Therefore,a higher frequency response characteristic of HSV is the key to ensure the control accuracy of digital hydraulic systems.However,the current research mainly focuses on its dynamic performance,but neglect its FRC.This paper presents a theoretical analysis demonstrating that the FRC of the HSV can be enhanced by minimizing its switching time.The maximum switching frequency(MSF)is mainly determined by opening dynamic performance when HSV operates with low switching duty ratio(SDR),whereas the closing dynamic performance limits the MSF when HSV operates with high SDR.Building upon these findings,the pre-excitation control algorithm(PECA)is proposed to reduce the switching time of the HSV,and consequently enhance its FRC.Experimental results demonstrate that PECA shortens the opening delay time of HSV by 1.12 ms,the closing delay time by 2.54 ms,and the closing moving time by 0.47 ms in comparison to the existing advanced control algorithms.As a result,a larger MSF of 417 Hz and a wider controllable SDR range from 20%to 70%were achieved at a switching frequency of 250 Hz.Thus,the proposed PFCA in this paper has been verified as an effective and promising approach for enhancing the control performance of digital hydraulic systems.展开更多
This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with th...This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state.The area size of the metal plate directly influences the capacitance ratio of the switch,as the area size of the metal cap decreases,the capacitance ratio dramatically rises up.The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size.Measurement results show that high capacitance ratio of the switches has a large effect on the isolation,and can actually improve the performance of the switches.展开更多
Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of swit...Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12104145 and 12374040)。
文摘The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical application.In this study,by utilizing first-principles calculations and semi-classical Boltzmann transport theory,it is found that hole doping with an experimentally achievable concentration of 1.83×10^(14)cm^(-2)can reduce the lattice thermal conductivity of monolayer MoS_(2) from 151.79 W·m^(-1)·K^(-1)to 12.19 W·m^(-1)·K^(-1),achieving a high thermal switching ratio of 12.5.The achieved switching ratio significantly surpasses previously reported values,including those achieved by extreme strain methods.This phenomenon mainly arises from the enhanced lattice anharmonicity,which is primarily contributed by the S atoms.These results indicate that hole doping is an effective method for tuning the lattice thermal conductivity of materials,and demonstrate that monolayer MoS_(2) is a potential candidate material for thermal switches.
基金Supported by National Natural Science Foundation of China (Grant No.52005441)Young Elite Scientist Sponsorship Program by CAST of China (Grant No.2022-2024QNRC001)+4 种基金Zhejiang Provincial Natural Science Foundation of China (Grant No.LQ21E050017)Zhejiang Provincial“Pioneer”and“Leading Goose”R&D Program of China (Grant Nos.2022C01122,2022C01132)State Key Laboratory of Mechanical System and Vibration of China (Grant No.MSV202316)Fundamental Research Funds for the Provincial Universities of Zhejiang of China (Grant No.RF-A2023007)Research Project of ZJUT of China (Grant No.GYY-ZH-2023075)。
文摘The high-speed on/off valve(HSV)serves as the fundamental component responsible for generating discrete fluids within digital hydraulic systems.As the switching frequency of the HSV increases,the properties of the generated discrete fluid approach those of continuous fluids.Therefore,a higher frequency response characteristic of HSV is the key to ensure the control accuracy of digital hydraulic systems.However,the current research mainly focuses on its dynamic performance,but neglect its FRC.This paper presents a theoretical analysis demonstrating that the FRC of the HSV can be enhanced by minimizing its switching time.The maximum switching frequency(MSF)is mainly determined by opening dynamic performance when HSV operates with low switching duty ratio(SDR),whereas the closing dynamic performance limits the MSF when HSV operates with high SDR.Building upon these findings,the pre-excitation control algorithm(PECA)is proposed to reduce the switching time of the HSV,and consequently enhance its FRC.Experimental results demonstrate that PECA shortens the opening delay time of HSV by 1.12 ms,the closing delay time by 2.54 ms,and the closing moving time by 0.47 ms in comparison to the existing advanced control algorithms.As a result,a larger MSF of 417 Hz and a wider controllable SDR range from 20%to 70%were achieved at a switching frequency of 250 Hz.Thus,the proposed PFCA in this paper has been verified as an effective and promising approach for enhancing the control performance of digital hydraulic systems.
文摘This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state.The area size of the metal plate directly influences the capacitance ratio of the switch,as the area size of the metal cap decreases,the capacitance ratio dramatically rises up.The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size.Measurement results show that high capacitance ratio of the switches has a large effect on the isolation,and can actually improve the performance of the switches.
基金Supported by the National Natural Science Foundation of China under Grant No 51202196the National Aerospace Science Foundation of China under Grant No 2013ZF53067+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No 2014JQ6204the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01032the 111 Project under Grant No B08040
文摘Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
