In this paper,a comprehensive evaluation on the silicon/silicon carbide(Si/SiC)hybrid switch is performed through experimental tests in terms of both electrical performance and robustness under extreme stresses.Based ...In this paper,a comprehensive evaluation on the silicon/silicon carbide(Si/SiC)hybrid switch is performed through experimental tests in terms of both electrical performance and robustness under extreme stresses.Based on the optional turn-on and turn-off delay times under the efficiency control mode obtained from the double-pulse test(DPT),both nondestructive and destructive single-pulse avalanche tests are conducted on the Si/SiC hybrid switch as well as on the two discrete device branches inside the hybrid switch.In addition,the avalanche voltage,critical avalanche energy,and peak avalanche current,which intrinsically characterize the unclamped-inductive-switching(UIS)avalanche characteristics,are carefully examined.In this way,the physical factors dominating the UIS characteristics of the hybrid switch,thus limiting its single-pulse avalanche withstand capability,are specifically and comprehensively identified;the underlying physical mechanisms are analyzed and revealed in depth,and how the gate control sequence affects the UIS characteristics of the hybrid switch is extensively investigated.We additionally carry out short-circuit(SC)tests under the fault-under-load(FUL)condition and perform a parallel in-depth analysis to experimentally determine which branch dominates the SC withstand capability of the hybrid switch.Our experimental study indicates that,for both SC robustness and single-pulse avalanche capability,the limiting factor is a single device branch among the two parallel discrete devices,and the UIS behavior is sensitive to the variation of the gate turn-off delay time Toff_delay.The study conducted in this paper not only provides deep academic insights into the electrical performance and reliability of the Si/SiC hybrid switch,but also offers fundamental theoretical principles and technical evidence to support its more efficient and long-term reliable applications of the hybrid switch in the industrial fields.展开更多
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxi...In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.展开更多
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T D...In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.展开更多
Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors （SPDs） are used to herald the...Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors （SPDs） are used to herald the success of the quantum Fredkin gate while they have no photon count. But analysis results show that for non-perfect SPD, the lower the detector efficiency, the higher the heralded success rate by this scheme is. We propose an improved linear optical quantum Fredkin gate by designing a new heralding scheme with an auxiliary qubit and only one SPD, in which the higher the detection efficiency of the heralding detector, the higher the success rate of the gate is. The new heralding scheme can also work efficiently under a non-ideal single photon source. Based on this quantum Fredkin gate, large-scale quantum switching networks can be built. As an example, a quantum Bene~ network is shown in which only one SPD is used.展开更多
Electro-optic active metasurfaces have attracted attention due to their ability to electronically control optical wavefronts with unprecedented spatiotemporal resolutions.In most studies,such devices require gate arra...Electro-optic active metasurfaces have attracted attention due to their ability to electronically control optical wavefronts with unprecedented spatiotemporal resolutions.In most studies,such devices require gate arrays composed of a large number of independently-controllable local gate electrodes that address the local scattering response of individual metaatoms.Although this approach in principle enables arbitrary wavefront control,the complicated driving mechanism and low optical efficiency have been hindering its practical applications.In this work,we demonstrate an active beam switching device that provides highly directional beam profiles and significant and uniform optical efficiencies across diffraction orders separated by a large deflection angle.The device operates with only a single-gate bias applied to monolayer graphene,modulating its optical conductivity to control the optical efficiency of the device.The key performance metrics,the absolute and the relative efficiency,which are defined as the scattered power toward a certain angleθnormalized by the incident power and the net scattered power from the metasurface,respectively,are maximized by a genetic algorithm.Experimentally,the metasurface achieves 57°of active beam switching from the 0th to the−1st order diffraction,with absolute efficiencies of 0.084 and 0.078 and relative efficiencies of 0.765 and 0.836,respectively.Furthermore,an analytical framework using nonlocal quasinormal mode expansion provides deeper insight into the operating mechanism of active beam switching.Finally,we discuss the performance limitations of this design platform and provide insights into potential improvements.展开更多
基金supported in part by the Anhui Provincial Natural Science Foundation Youth Project(Category C)under Grant No.2508085QE184the Opening Project of Key Laboratory of Power Electronics and Motion Control of Anhui Higher Education Institutions under Grant No.PEMC24004+1 种基金the Anhui University of Technology Young Teachers Research Fund under Grant No.QZ202412the Scientific Research Startup Fund for Introduced Talents of Anhui University of Technology under Grant No.QD202340.
文摘In this paper,a comprehensive evaluation on the silicon/silicon carbide(Si/SiC)hybrid switch is performed through experimental tests in terms of both electrical performance and robustness under extreme stresses.Based on the optional turn-on and turn-off delay times under the efficiency control mode obtained from the double-pulse test(DPT),both nondestructive and destructive single-pulse avalanche tests are conducted on the Si/SiC hybrid switch as well as on the two discrete device branches inside the hybrid switch.In addition,the avalanche voltage,critical avalanche energy,and peak avalanche current,which intrinsically characterize the unclamped-inductive-switching(UIS)avalanche characteristics,are carefully examined.In this way,the physical factors dominating the UIS characteristics of the hybrid switch,thus limiting its single-pulse avalanche withstand capability,are specifically and comprehensively identified;the underlying physical mechanisms are analyzed and revealed in depth,and how the gate control sequence affects the UIS characteristics of the hybrid switch is extensively investigated.We additionally carry out short-circuit(SC)tests under the fault-under-load(FUL)condition and perform a parallel in-depth analysis to experimentally determine which branch dominates the SC withstand capability of the hybrid switch.Our experimental study indicates that,for both SC robustness and single-pulse avalanche capability,the limiting factor is a single device branch among the two parallel discrete devices,and the UIS behavior is sensitive to the variation of the gate turn-off delay time Toff_delay.The study conducted in this paper not only provides deep academic insights into the electrical performance and reliability of the Si/SiC hybrid switch,but also offers fundamental theoretical principles and technical evidence to support its more efficient and long-term reliable applications of the hybrid switch in the industrial fields.
文摘In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.
文摘In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61372076 and 61301171)the 111 Project(Grant No.B08038)the Fundamental Research Funds for the Central Universities,China(Grant Nos.K5051301059 and K5051201021)
文摘Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors （SPDs） are used to herald the success of the quantum Fredkin gate while they have no photon count. But analysis results show that for non-perfect SPD, the lower the detector efficiency, the higher the heralded success rate by this scheme is. We propose an improved linear optical quantum Fredkin gate by designing a new heralding scheme with an auxiliary qubit and only one SPD, in which the higher the detection efficiency of the heralding detector, the higher the success rate of the gate is. The new heralding scheme can also work efficiently under a non-ideal single photon source. Based on this quantum Fredkin gate, large-scale quantum switching networks can be built. As an example, a quantum Bene~ network is shown in which only one SPD is used.
基金supported by the National Research Foundation of Korea(NRF)grants(NRF-2022R1A2C2092095,RS-2024-00416583,RS-2024-00414119,RS2024-00452558)funded by the Korea government(MSIT),and Samsung Research Funding and Incubation Center of Samsung Electronics grant(SRFCIT1702-14)+1 种基金supported by the Ministry of Trade,Industry&Energy(MOTIE)(1415180303)the Korea Semiconductor Research Consortium(KSRC)(20019357).
文摘Electro-optic active metasurfaces have attracted attention due to their ability to electronically control optical wavefronts with unprecedented spatiotemporal resolutions.In most studies,such devices require gate arrays composed of a large number of independently-controllable local gate electrodes that address the local scattering response of individual metaatoms.Although this approach in principle enables arbitrary wavefront control,the complicated driving mechanism and low optical efficiency have been hindering its practical applications.In this work,we demonstrate an active beam switching device that provides highly directional beam profiles and significant and uniform optical efficiencies across diffraction orders separated by a large deflection angle.The device operates with only a single-gate bias applied to monolayer graphene,modulating its optical conductivity to control the optical efficiency of the device.The key performance metrics,the absolute and the relative efficiency,which are defined as the scattered power toward a certain angleθnormalized by the incident power and the net scattered power from the metasurface,respectively,are maximized by a genetic algorithm.Experimentally,the metasurface achieves 57°of active beam switching from the 0th to the−1st order diffraction,with absolute efficiencies of 0.084 and 0.078 and relative efficiencies of 0.765 and 0.836,respectively.Furthermore,an analytical framework using nonlocal quasinormal mode expansion provides deeper insight into the operating mechanism of active beam switching.Finally,we discuss the performance limitations of this design platform and provide insights into potential improvements.
