The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-...The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-voltage electricity monitoring,and maritime fog dispersion navigation.However,Ga_(2)O_(3) photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time,limiting their practical application.Herein,the Ga_(2)O_(3) solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.The photodetector exhibits a high responsivity of 1.51×10^(10) A/W,a sensitive detectivity of 6.01×10^(17) Jones,a large external quantum efficiency of 7.53×10^(12)%,and a fast rise time of 180 ms under 250-nm illumination.Notably,the photodetector achieves both high responsivity and fast response time simultaneously under ultra-weak power intensity excitation of 0.01μW/cm^(2).This important improvement is attributed to the reduction of interface defects,improved carrier transport,efficient carrier separation,and enhanced light absorption enabled by the suspended structure.This work provides valuable insights for designing and optimizing high-performance Ga_(2)O_(3) solar-blind photodetectors.展开更多
For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devic...For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3 D deformation of suspended Ti/Au TES device structure, I–V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I–V characteristics of the devices. For devices with the Ti/Au bilayer(150 μm × 150 μm) and beams(100 μm × 25 μm), the transition temperature(T;) is 253 m K with a width of 6 m K, and the value of the temperature sensitivity α is 95.1.展开更多
On the basis of analysing the outer performance degradation of shock absorber on suspenson and from the relationship between outer and inner performances of the shock absorber, an internal relationship between the str...On the basis of analysing the outer performance degradation of shock absorber on suspenson and from the relationship between outer and inner performances of the shock absorber, an internal relationship between the structure design and degradation of the shock absorber is discussed in the paper. From dynamic property, analysed the dynamic cause for degradation, the paper proposes a technical method of improving outer performance and a concept of critical velocity, and discusses what effects the critical velocity and the outer performance mance degradation has.展开更多
基金support from the China Postdoctoral Science Foundation(2023M742732)the Postdoctoral Fellowship Program of CPSF under grant number GZC20241303+3 种基金the Fundamental Research Funds for the Central Universities(XJSJ24100)the National Key R&D Program of China(2023YFB4402303)the National Natural Science Foundation of China(grant nos.62404176,62025402,62090033,92364204,9226420,and 62293522)Major Program of Zhejiang Natural Science Foundation(grant no.LDT23F04024F04).
文摘The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-voltage electricity monitoring,and maritime fog dispersion navigation.However,Ga_(2)O_(3) photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time,limiting their practical application.Herein,the Ga_(2)O_(3) solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.The photodetector exhibits a high responsivity of 1.51×10^(10) A/W,a sensitive detectivity of 6.01×10^(17) Jones,a large external quantum efficiency of 7.53×10^(12)%,and a fast rise time of 180 ms under 250-nm illumination.Notably,the photodetector achieves both high responsivity and fast response time simultaneously under ultra-weak power intensity excitation of 0.01μW/cm^(2).This important improvement is attributed to the reduction of interface defects,improved carrier transport,efficient carrier separation,and enhanced light absorption enabled by the suspended structure.This work provides valuable insights for designing and optimizing high-performance Ga_(2)O_(3) solar-blind photodetectors.
文摘For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3 D deformation of suspended Ti/Au TES device structure, I–V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I–V characteristics of the devices. For devices with the Ti/Au bilayer(150 μm × 150 μm) and beams(100 μm × 25 μm), the transition temperature(T;) is 253 m K with a width of 6 m K, and the value of the temperature sensitivity α is 95.1.
文摘On the basis of analysing the outer performance degradation of shock absorber on suspenson and from the relationship between outer and inner performances of the shock absorber, an internal relationship between the structure design and degradation of the shock absorber is discussed in the paper. From dynamic property, analysed the dynamic cause for degradation, the paper proposes a technical method of improving outer performance and a concept of critical velocity, and discusses what effects the critical velocity and the outer performance mance degradation has.
