La-Mg-Ni-based hydrogen storage alloys with superlattice structures are the new generation anode material for nickel metal hydride(Ni-MH)batteries owing to the advantages of high capacity and exceptional activation pr...La-Mg-Ni-based hydrogen storage alloys with superlattice structures are the new generation anode material for nickel metal hydride(Ni-MH)batteries owing to the advantages of high capacity and exceptional activation properties.However,the cycling stability is not currently satisfactory enough which plagues its application.Herein,a strategy of partially substituting La with the Y element is proposed to boost the capacity durability of La-Mg-Ni-based alloys.Furthermore,phase structure regulation is implemented simultaneously to obtain the A5 B19-type alloy with good crystal stability specifically.It is found that Y promotes the phase formation of the Pr5 Co19-type phase after annealing at 985℃.The alloy containing Y contributes to the superior rate capability resulting from the promoted hydrogen diffusion rate.Notably,Y substitution enables strengthening the anti-pulverization ability of the alloy in terms of increasing the volume match between[A_(2)B_(4)]and[AB5]subunits,and effectively enhances the anti-corrosion ability of the alloy due to high electronegativity,realizing improved long-term cycling stability of the alloy from 74.2%to 78.5%after cycling 300 times.The work is expected to shed light on the composition and structure design of the La-Mg-Ni-based hydrogen storage alloy for Ni-MH batteries.展开更多
This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃...This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.展开更多
Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,thi...Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,this photocatalytic reaction process includes the following steps:First,the semiconductor photocatalyst is photoexcited to generate photoinduced excitons on a femtosecond timescale.Next,the photoinduced excitons are separated into photogenerated electrons and holes,occurring within a femtosecond to picosecond timescale.Subsequently,only a small fraction of the photogenerated electrons and holes can overcome kinetic barriers,such as phonon scattering and bulk defects,to migrate to the surface。展开更多
Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated ...Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated compound La_(2)Bi_(4)Cu_(2)O_(6)Se_(4),which is constructed by alternately stacking LaCuSeO and Bi_(2)O_(2)Se units along the c-axis in a 1:2 ratio,has designed for thermoelectric materials.The unique intercalated strategy leads to the four-band convergence at the valence band maximum,and the combination of multiple heavy band and light band,which significantly enhances the p-type doping power factor.The lattice thermal conductivities in La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)and LaCuSeO compounds are accurately calculated by considering the coherence contributions of the anharmonic phonon reformulations and the off-diagonal term of the heat flux operator.The weak bond property of the Cu d-Se p bonding causes phonon softening,reducing the lattice thermal conductivity.The intercalated Bi atom has stereochemically active lone-pair electrons,which causes acoustic-optical coupling and produces strong fourth acoustic-optical phonon scattering,suppressing low-frequency phonon transport.The carrier relaxation time is rationalized by considering multiple carrier scattering mechanisms.The p-type doping La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)achieves an average ZT of 2.3 at 700 K,and an optimal ZT of 2.7 along the in-plane direction.Our current work not only reveals the origin of the strong phonon scattering and large power factor of La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)compound,but also provides theoretical guidance for the design of La-based layered oxides for thermoelectric applications.展开更多
The mechanisms of enhancing spin-orbit torque(SOT) have attracted significant attention, particularly regarding the influence of extrinsic scattering mechanisms on SOT efficiency, as they complement intrinsic contribu...The mechanisms of enhancing spin-orbit torque(SOT) have attracted significant attention, particularly regarding the influence of extrinsic scattering mechanisms on SOT efficiency, as they complement intrinsic contributions. In multilayer systems, extrinsic interfacial scattering, along with scattering from defects or impurities inside the materials, plays a crucial role in affecting the SOT efficiency. In this study, we successfully fabricated high-quality epitaxially grown [Ir/Pt]N superlattices with an increasing number of interfaces using a magnetron sputtering system to investigate the contribution of extrinsic interfacial scattering to SOT efficiency. We measured SOT efficiency through spin-torque ferromagnetic resonance methods and determined the spin Hall angle using the spin pumping technique. Additionally, we calculated spin transparency based on the SOT efficiency and spin Hall angle. Our findings indicate that the values of SOT efficiency, spin Hall angle, and spin transparency are enhanced in the superlattice structure compared to Pt, which we attribute to the increase in interfacial scattering.This research offers an effective strategy for designing and fabricating advanced spintronic devices.展开更多
The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-per...The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.展开更多
Epitaxial strain is an effective way to control thermoelectricity of a thin film system.In this work,we investigate strain-dependent thermoelectricity of[(SrTiO_(3))_(3)/(SrTi_(0.8)Nb_(0.2)O_(3))_(3)]_(10)superlattice...Epitaxial strain is an effective way to control thermoelectricity of a thin film system.In this work,we investigate strain-dependent thermoelectricity of[(SrTiO_(3))_(3)/(SrTi_(0.8)Nb_(0.2)O_(3))_(3)]_(10)superlattices grown on different substrates,including-0.96%on(LaAlO_(3))_(0.3)(SrAl_(0.5)Ta_(0.5)O_(3))_(0.7)(001)(LSAT),0%on SrTiO_(3)(001)(STO),+0.99%on DyScO_(3)(110)(DSO)and+1.64%on GdScO_(3)(110)(GSO),respectively.Our results show that the highest room-temperature thermoelectricity is achieved when the STO-based superlattice is grown on the DSO substrate with+0.99%tensile strain.This is attributed to the high permittivity and low dielectric loss arising from the ferroelectric domain and electron-phonon coupling,which boost the power factor(PF)to 10.5 mW·m^(-1)·K^(-2)at 300 K.展开更多
Moiré superlattices provide a new platform to engineer various many-body problems. In this work, we consider arrays of quantum dots(QD) realized on semiconductor moiré superlattices with a deep moiré po...Moiré superlattices provide a new platform to engineer various many-body problems. In this work, we consider arrays of quantum dots(QD) realized on semiconductor moiré superlattices with a deep moiré potential. We diagonalize single QD with multiple electrons, and find degenerate ground states serving as local degrees of freedom(qudits) in the superlattice. With a deep moiré potential, the hopping and exchange interaction between nearby QDs become irrelevant,and the direct Coulomb interaction of the density–density type dominates. Therefore, nearby QDs must arrange the spatial densities to optimize the Coulomb energy. When the local Hilbert space has a two-fold orbital degeneracy, we find that a square superlattice realizes an anisotropic XY model, while a triangular superlattice realizes a generalized XY model with geometric frustration.展开更多
In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
Two-dimensional(2D)van der Waals(vdW)moiré superlattices have attracted significant attention due to their novel physical properties and quantum phenomena.The realization of these fascinating properties,however h...Two-dimensional(2D)van der Waals(vdW)moiré superlattices have attracted significant attention due to their novel physical properties and quantum phenomena.The realization of these fascinating properties,however heavily depends on the quality of the measured moiré superlattices,emphasizing the importance of advanced fabrication techniques.This review provides an in-depth discussion of the methods for fabricating moiré superlattices.It begins with a brief overview of the structure,properties,and potential applications of moiré superlattices,followed by a detailed examination of fabrication techniques,focuses on different kinds of transfer techniques and growth methods,particularly chemical vapor deposition(CVD)method.Finally,it addresses current challenges in fabricating high-quality moiré superlattices and discusses potential directions for future advancements in this field.This review will enhance the understanding of moiré superlattice fabrication and contributing to the continued development of 2D twistronics.展开更多
Two-dimensional(2D)moirésuperlattices with a small twist in orientation exhibit a broad range of physical properties due to the complicated intralayer and interlayer interactions modulated by the twist angle.Here...Two-dimensional(2D)moirésuperlattices with a small twist in orientation exhibit a broad range of physical properties due to the complicated intralayer and interlayer interactions modulated by the twist angle.Here,we report a metal-semiconductor phase transition in homojunction moirésuperlattices of NiS_(2) and PtTe_(2) with large twist angles based on high-throughput screening of 2D materials MX_(2)(M=Ni,Pd,Pt;X=S,Se,Te)via density functional theory(DFT)calculations.Firstly,the calculations for different stacking configurations(AA,AB and AC)reveal that AA stacking ones are stable for all the bilayer MX_(2).The metallic or semiconducting properties of these 2D materials remain invariable for different stacking without twisting except for NiS_(2) and PtTe_(2).For the twisted configurations,NiS_(2) transfers from metal to semiconductor when the twist angles are 21.79°,27.79°,32.20°and 60°.PtTe_(2) exhibits a similar transition at 60°.The phase transition is due to the weakened d-p orbital hybridization around the Fermi level as the interlayer distance increases in the twisted configurations.Further calculations of untwisted bilayers with increasing interlayer distance demonstrate that all the materials undergo metal-semiconductor phase transition with the increased interlayer distance because of the weakened d-p orbital hybridization.These findings provide fundamental insights into tuning the electronic properties of moirésuperlattices with large twist angles.展开更多
Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy togeth...Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.展开更多
A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.T...A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.This method was applied to examine the finest quality samples of super-multiperiod Al_(0.3)Ga_(0.7)As/GaAs superlattices grown by molecular beam epitaxy.The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method.For the first time,the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted.The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram,transition energies,relaxation rates,and gain estimation.It has achieved a remarkably low 5%error compared to the commonly used method,which typically results in a 25%error,and allowed to recover the superlattice parameters.The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters.The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm,as was observed in photoreflectance experiments.The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.展开更多
We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different par...We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different partial waves,the doublepeakstructure can appear in the curve of the interlayer conductance versus twist angle.Furthermore,we study the influencesof the model parameters,i.e.,the chemical potential of electrodes,the thickness of Moirésuperlattice,and the strength ofinterface potential,on the peak structure of the interlayer conductance.In particular,the parameter dependence of the peakstructure is concluded via a phase diagram,and the physical meanings of the phase diagram is formulized.Finally,thepotential applications of the present work is discussed.展开更多
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL a...Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and realizing the unique emergent properties are key challenges in its investigation. Here we recommend that the spiral dislocation driven growth is another optional method for the preparation of high quality MSL samples. The spiral structure stabilizes the constant out-of-plane lattice distance, causing the variations in electronic and optical properties. Taking SnS_(2) MSL as an example, we find prominent properties including large band gap reduction(~ 0.4 e V) and enhanced optical activity. Firstprinciples calculations reveal that these unusual properties can be ascribed to the locally enhanced interlayer interaction associated with the Moiré potential modulation. We believe that the spiral dislocation driven growth would be a powerful method to expand the MSL family and broaden their scope of application.展开更多
High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarif...High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.展开更多
We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in...We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ωscans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50%,we have obtained an electron density up to 4.48×10^(19)cm^(-3)and a resistivity of 0.002Ω·cm,and a hole density of 1.83×10^(18)cm^(-3)with a resistivity of 3.722Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.展开更多
Vanadium carbide/titanium carbide （VC/TiC） superlattice films were synthesized by magnetron sputtering method. The effects of modulation period on the microstructure evolution and mechanical properties were investig...Vanadium carbide/titanium carbide （VC/TiC） superlattice films were synthesized by magnetron sputtering method. The effects of modulation period on the microstructure evolution and mechanical properties were investigated by EDXA, XRD, HRTEM and nano-indentation. The results reveal that the VC/TiC superlattice films form an epitaxial structure when their modulation period is less than a critical value, accompanied with a remarkable increase in hardness. Further increasing the modulation period, the hardness of superlattices decreases slowly to the rule-of-mixture value due to the destruction of epitaxial structures. The XRD results reveal that three-directional strains are generated in superlattices when the epitaxial structure is formed, which may change the modulus of constituent layers. This may explain the remarkable hardness enhancement of VC/TiC superlattices.展开更多
The electronic structure of GaAs/Al xGa 1-x As superlattices has been investigated by an ab initio calculation method—the conjugate gradient (CG) approach.In order to determine that,a conventional CG scheme is m...The electronic structure of GaAs/Al xGa 1-x As superlattices has been investigated by an ab initio calculation method—the conjugate gradient (CG) approach.In order to determine that,a conventional CG scheme is modified for our superlattices:First,apart from the former scheme,for the fixed electron density n(z),the eigenvalues and eigenfunctions are calculated,and then by using those,reconstruct the new n(z).Also,for every k z,we apply the CG schemes independently.The calculated energy difference between two minibands,and Fermi energy are in good agreement with the experimental data.展开更多
基金the financial support by the National Nat-ural Science Foundation of China(Nos.52201282,52071281,52371239)the China Postdoctoral Science Foundation(No.2023M742945)+4 种基金Hebei Provincial Postdoctoral Science Foundation(No.B2023003023)the Science Research Project of Hebei Education Department(No.BJK2022033)the Natural Science Foundation of Hebei Province(No.C2022203003)the Inner Mongolia Science and Technology Major Project(No.2020ZD0012)the Baotou Science and Technology Planning Project(No.XM2022BT09).
文摘La-Mg-Ni-based hydrogen storage alloys with superlattice structures are the new generation anode material for nickel metal hydride(Ni-MH)batteries owing to the advantages of high capacity and exceptional activation properties.However,the cycling stability is not currently satisfactory enough which plagues its application.Herein,a strategy of partially substituting La with the Y element is proposed to boost the capacity durability of La-Mg-Ni-based alloys.Furthermore,phase structure regulation is implemented simultaneously to obtain the A5 B19-type alloy with good crystal stability specifically.It is found that Y promotes the phase formation of the Pr5 Co19-type phase after annealing at 985℃.The alloy containing Y contributes to the superior rate capability resulting from the promoted hydrogen diffusion rate.Notably,Y substitution enables strengthening the anti-pulverization ability of the alloy in terms of increasing the volume match between[A_(2)B_(4)]and[AB5]subunits,and effectively enhances the anti-corrosion ability of the alloy due to high electronegativity,realizing improved long-term cycling stability of the alloy from 74.2%to 78.5%after cycling 300 times.The work is expected to shed light on the composition and structure design of the La-Mg-Ni-based hydrogen storage alloy for Ni-MH batteries.
文摘This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.
文摘Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,this photocatalytic reaction process includes the following steps:First,the semiconductor photocatalyst is photoexcited to generate photoinduced excitons on a femtosecond timescale.Next,the photoinduced excitons are separated into photogenerated electrons and holes,occurring within a femtosecond to picosecond timescale.Subsequently,only a small fraction of the photogenerated electrons and holes can overcome kinetic barriers,such as phonon scattering and bulk defects,to migrate to the surface。
基金Financial supports from the National Natural Science Foundation of China(Grant No.21503039)Department of Science and Technology of Liaoning Province(Grant No.2019MS164)+1 种基金Department of Education of Liaoning Province(Grant No.LJ2020JCL034)Discipline Innovation Team of Liaoning Technical University(Grant No.LNTU20TD-16)are greatly acknowledged。
文摘Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated compound La_(2)Bi_(4)Cu_(2)O_(6)Se_(4),which is constructed by alternately stacking LaCuSeO and Bi_(2)O_(2)Se units along the c-axis in a 1:2 ratio,has designed for thermoelectric materials.The unique intercalated strategy leads to the four-band convergence at the valence band maximum,and the combination of multiple heavy band and light band,which significantly enhances the p-type doping power factor.The lattice thermal conductivities in La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)and LaCuSeO compounds are accurately calculated by considering the coherence contributions of the anharmonic phonon reformulations and the off-diagonal term of the heat flux operator.The weak bond property of the Cu d-Se p bonding causes phonon softening,reducing the lattice thermal conductivity.The intercalated Bi atom has stereochemically active lone-pair electrons,which causes acoustic-optical coupling and produces strong fourth acoustic-optical phonon scattering,suppressing low-frequency phonon transport.The carrier relaxation time is rationalized by considering multiple carrier scattering mechanisms.The p-type doping La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)achieves an average ZT of 2.3 at 700 K,and an optimal ZT of 2.7 along the in-plane direction.Our current work not only reveals the origin of the strong phonon scattering and large power factor of La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)compound,but also provides theoretical guidance for the design of La-based layered oxides for thermoelectric applications.
基金financially supported by the Science Center of the National Science Foundation of China (Grant No. 52088101)the National Natural Science Foundation of China (Grant Nos. 52161160334, 12274437, 12174426, and 52271237)+1 种基金the Chinese Academy of Sciences (CAS) Project for Young Scientists in Basic Research No. YSBR-084the CAS Youth Interdisciplinary Team。
文摘The mechanisms of enhancing spin-orbit torque(SOT) have attracted significant attention, particularly regarding the influence of extrinsic scattering mechanisms on SOT efficiency, as they complement intrinsic contributions. In multilayer systems, extrinsic interfacial scattering, along with scattering from defects or impurities inside the materials, plays a crucial role in affecting the SOT efficiency. In this study, we successfully fabricated high-quality epitaxially grown [Ir/Pt]N superlattices with an increasing number of interfaces using a magnetron sputtering system to investigate the contribution of extrinsic interfacial scattering to SOT efficiency. We measured SOT efficiency through spin-torque ferromagnetic resonance methods and determined the spin Hall angle using the spin pumping technique. Additionally, we calculated spin transparency based on the SOT efficiency and spin Hall angle. Our findings indicate that the values of SOT efficiency, spin Hall angle, and spin transparency are enhanced in the superlattice structure compared to Pt, which we attribute to the increase in interfacial scattering.This research offers an effective strategy for designing and fabricating advanced spintronic devices.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1204000)the Beijing National Natural Science Foundation(Grant No.Z230006)the National Natural Science Foundation of China(Grant Nos.12304155 and 12274405).
文摘The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.
基金supported by the National Key Research&Development Program of China(Grant No.2022YFA1403300)the Innovation Program for Quantum Science and Technology(Grant No.2024ZD0300103)+2 种基金the National Natural Science Foundation of China(Grant Nos.11991060,11427902,12074075,62171136,and 12474165)the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)the Shanghai Municipal Natural Science Foundation(Grant Nos.22ZR1407400,22ZR1408100,and 23ZR1407200)。
文摘Epitaxial strain is an effective way to control thermoelectricity of a thin film system.In this work,we investigate strain-dependent thermoelectricity of[(SrTiO_(3))_(3)/(SrTi_(0.8)Nb_(0.2)O_(3))_(3)]_(10)superlattices grown on different substrates,including-0.96%on(LaAlO_(3))_(0.3)(SrAl_(0.5)Ta_(0.5)O_(3))_(0.7)(001)(LSAT),0%on SrTiO_(3)(001)(STO),+0.99%on DyScO_(3)(110)(DSO)and+1.64%on GdScO_(3)(110)(GSO),respectively.Our results show that the highest room-temperature thermoelectricity is achieved when the STO-based superlattice is grown on the DSO substrate with+0.99%tensile strain.This is attributed to the high permittivity and low dielectric loss arising from the ferroelectric domain and electron-phonon coupling,which boost the power factor(PF)to 10.5 mW·m^(-1)·K^(-2)at 300 K.
基金Project supported by the National Natural Science Foundation of China (Grant No. 12274005)the National Key Research and Development Program of China (Grant No. 2021YFA1401903)Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302403)。
文摘Moiré superlattices provide a new platform to engineer various many-body problems. In this work, we consider arrays of quantum dots(QD) realized on semiconductor moiré superlattices with a deep moiré potential. We diagonalize single QD with multiple electrons, and find degenerate ground states serving as local degrees of freedom(qudits) in the superlattice. With a deep moiré potential, the hopping and exchange interaction between nearby QDs become irrelevant,and the direct Coulomb interaction of the density–density type dominates. Therefore, nearby QDs must arrange the spatial densities to optimize the Coulomb energy. When the local Hilbert space has a two-fold orbital degeneracy, we find that a square superlattice realizes an anisotropic XY model, while a triangular superlattice realizes a generalized XY model with geometric frustration.
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.52425203 and 12104218)the the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20240008 and BK20241252)+2 种基金the China National Postdoctoral Program for Innovative Talents(Grant No.BX2021120)the Xiaomi Foundation,the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231093)Jiangsu Funding Program for Excellent Postdoctoral Talent(Grant No.2023ZB553).
文摘Two-dimensional(2D)van der Waals(vdW)moiré superlattices have attracted significant attention due to their novel physical properties and quantum phenomena.The realization of these fascinating properties,however heavily depends on the quality of the measured moiré superlattices,emphasizing the importance of advanced fabrication techniques.This review provides an in-depth discussion of the methods for fabricating moiré superlattices.It begins with a brief overview of the structure,properties,and potential applications of moiré superlattices,followed by a detailed examination of fabrication techniques,focuses on different kinds of transfer techniques and growth methods,particularly chemical vapor deposition(CVD)method.Finally,it addresses current challenges in fabricating high-quality moiré superlattices and discusses potential directions for future advancements in this field.This review will enhance the understanding of moiré superlattice fabrication and contributing to the continued development of 2D twistronics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.52472153,11704081,62488201)the National Key Research and Development Program of China(Grant No.2022YFA1204100)+2 种基金National Science and Technology Innovation Talent Cultivation Program(Grant No.2023BZRC016)Guangxi Natural Science Foundation(Grant No.2020GXNSFAA297182)the special fund for“Guangxi Bagui Scholars”。
文摘Two-dimensional(2D)moirésuperlattices with a small twist in orientation exhibit a broad range of physical properties due to the complicated intralayer and interlayer interactions modulated by the twist angle.Here,we report a metal-semiconductor phase transition in homojunction moirésuperlattices of NiS_(2) and PtTe_(2) with large twist angles based on high-throughput screening of 2D materials MX_(2)(M=Ni,Pd,Pt;X=S,Se,Te)via density functional theory(DFT)calculations.Firstly,the calculations for different stacking configurations(AA,AB and AC)reveal that AA stacking ones are stable for all the bilayer MX_(2).The metallic or semiconducting properties of these 2D materials remain invariable for different stacking without twisting except for NiS_(2) and PtTe_(2).For the twisted configurations,NiS_(2) transfers from metal to semiconductor when the twist angles are 21.79°,27.79°,32.20°and 60°.PtTe_(2) exhibits a similar transition at 60°.The phase transition is due to the weakened d-p orbital hybridization around the Fermi level as the interlayer distance increases in the twisted configurations.Further calculations of untwisted bilayers with increasing interlayer distance demonstrate that all the materials undergo metal-semiconductor phase transition with the increased interlayer distance because of the weakened d-p orbital hybridization.These findings provide fundamental insights into tuning the electronic properties of moirésuperlattices with large twist angles.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2023YFF0719200 and 2022YFA1404004)the National Natural Science Foundation of China(Grant Nos.62322115,61988102,61975110,62335012,and 12074248)+3 种基金111 Project(Grant No.D18014)the Key Project supported by Science and Technology Commission Shanghai Municipality(Grant No.YDZX20193100004960)Science and Technology Commission of Shanghai Municipality(Grant Nos.22JC1400200 and 21S31907400)General Administration of Customs People’s Republic of China(Grant No.2019HK006)。
文摘Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.
基金The work was supported by the Ministry of Education and Science of the Russian Federation in the framework of experimental research(Nos.075-01438-22-06 and FSEE-2022-0018)the Russian Science Foundation in theoretical research(No.RSF 23-29-00216).
文摘A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.This method was applied to examine the finest quality samples of super-multiperiod Al_(0.3)Ga_(0.7)As/GaAs superlattices grown by molecular beam epitaxy.The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method.For the first time,the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted.The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram,transition energies,relaxation rates,and gain estimation.It has achieved a remarkably low 5%error compared to the commonly used method,which typically results in a 25%error,and allowed to recover the superlattice parameters.The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters.The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm,as was observed in photoreflectance experiments.The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.
基金supported by the National Natural Science Foundation of China(Grant No.11704197)the Natural Science Foundation of Nanjing University of Posts and Telecommunications(Grant Nos.NY221066 and NY223074).
文摘We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different partial waves,the doublepeakstructure can appear in the curve of the interlayer conductance versus twist angle.Furthermore,we study the influencesof the model parameters,i.e.,the chemical potential of electrodes,the thickness of Moirésuperlattice,and the strength ofinterface potential,on the peak structure of the interlayer conductance.In particular,the parameter dependence of the peakstructure is concluded via a phase diagram,and the physical meanings of the phase diagram is formulized.Finally,thepotential applications of the present work is discussed.
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1402500)the National Natural Science Foundation of China(Grant No.62125402)。
文摘Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and realizing the unique emergent properties are key challenges in its investigation. Here we recommend that the spiral dislocation driven growth is another optional method for the preparation of high quality MSL samples. The spiral structure stabilizes the constant out-of-plane lattice distance, causing the variations in electronic and optical properties. Taking SnS_(2) MSL as an example, we find prominent properties including large band gap reduction(~ 0.4 e V) and enhanced optical activity. Firstprinciples calculations reveal that these unusual properties can be ascribed to the locally enhanced interlayer interaction associated with the Moiré potential modulation. We believe that the spiral dislocation driven growth would be a powerful method to expand the MSL family and broaden their scope of application.
基金financially supported by the National Natural Science Foundation of China(Nos.62074018,62174015 and 62275032)the Developing Project of Science and Technology of Jilin Province(No.20210509061RQ)+3 种基金the Natural Science Foundation of Jilin Province(No.20210101473JC)National Key R&D Program of China(No.2021YFB3201901)The Natural Science Foundation of Chongqing China(No.cstc2021jcyjmsxmX1060)supported by R&D project of Collighter Co.,Ltd。
文摘High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFB3605600)the National Natural Science Foundation of China(Grant No.61974065)+3 种基金the Key R&D Project of Jiangsu Province,China(Grant Nos.BE2020004-3 and BE2021026)Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098)the Jiangsu Special ProfessorshipCollaborative Innovation Center of Solid State Lighting and Energy-saving Electronics。
文摘We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ωscans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50%,we have obtained an electron density up to 4.48×10^(19)cm^(-3)and a resistivity of 0.002Ω·cm,and a hole density of 1.83×10^(18)cm^(-3)with a resistivity of 3.722Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.
基金Project(51201187)supported by the National Natural Science Foundation of China
文摘Vanadium carbide/titanium carbide （VC/TiC） superlattice films were synthesized by magnetron sputtering method. The effects of modulation period on the microstructure evolution and mechanical properties were investigated by EDXA, XRD, HRTEM and nano-indentation. The results reveal that the VC/TiC superlattice films form an epitaxial structure when their modulation period is less than a critical value, accompanied with a remarkable increase in hardness. Further increasing the modulation period, the hardness of superlattices decreases slowly to the rule-of-mixture value due to the destruction of epitaxial structures. The XRD results reveal that three-directional strains are generated in superlattices when the epitaxial structure is formed, which may change the modulus of constituent layers. This may explain the remarkable hardness enhancement of VC/TiC superlattices.
基金Supported by National Natural Science Foundation of China(No.50 0 72 0 1 5 and No.5980 1 0 0 6) and Tianjin Youth Foundation o
文摘The electronic structure of GaAs/Al xGa 1-x As superlattices has been investigated by an ab initio calculation method—the conjugate gradient (CG) approach.In order to determine that,a conventional CG scheme is modified for our superlattices:First,apart from the former scheme,for the fixed electron density n(z),the eigenvalues and eigenfunctions are calculated,and then by using those,reconstruct the new n(z).Also,for every k z,we apply the CG schemes independently.The calculated energy difference between two minibands,and Fermi energy are in good agreement with the experimental data.
