Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and sub...Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and subsurface damage depth(SDD)are crucial indicators for evaluating the surface quality of these materials after grinding.Existing prediction models lack general applicability and do not accurately account for the complex material behavior under grinding conditions.This paper introduces novel models for predicting both surface roughness and SDD in hard and brittle semiconductor materials.The surface roughness model uniquely incorporates the material’s elastic recovery properties,revealing the significant impact of these properties on prediction accuracy.The SDD model is distinguished by its analysis of the interactions between abrasive grits and the workpiece,as well as the mechanisms governing stress-induced damage evolution.The surface roughness model and SDD model both establish a stable relationship with the grit depth of cut(GDC).Additionally,we have developed an analytical relationship between the GDC and grinding process parameters.This,in turn,enables the establishment of an analytical framework for predicting surface roughness and SDD based on grinding process parameters,which cannot be achieved by previous models.The models were validated through systematic experiments on three different semiconductor materials,demonstrating excellent agreement with experimental data,with prediction errors of 6.3%for surface roughness and6.9%for SDD.Additionally,this study identifies variations in elastic recovery and material plasticity as critical factors influencing surface roughness and SDD across different materials.These findings significantly advance the accuracy of predictive models and broaden their applicability for grinding hard and brittle semiconductor materials.展开更多
As for the ultra-precision grinding of the hemispherical fused silica resonator,due to the hard and brittle nature of fused silica,subsurface damage(SSD)is easily generated,which enormously influences the performance ...As for the ultra-precision grinding of the hemispherical fused silica resonator,due to the hard and brittle nature of fused silica,subsurface damage(SSD)is easily generated,which enormously influences the performance of such components.Hence,ultra-precision grinding experiments are carried out to investigate the surface/subsurface quality of the hemispherical resonator machined by the small ball-end fine diamond grinding wheel.The influence of grinding parameters on the surface roughness(SR)and SSD depth of fused silica samples is then analyzed.The experimental results indicate that the SR and SSD depth decreased with the increase of grinding speed and the decrease of feed rate and grinding depth.In addition,based on the material strain rate and the maximum undeformed chip thickness,the effect of grinding parameters on the subsurface damage mechanism of fused silica samples is analyzed.Furthermore,a multi-step ultra-precision grinding technique of the hemispherical resonator is proposed based on the interaction influence between grinding depth and feed rate.Finally,the hemispherical resonator is processed by the proposed grinding technique,and the SR is improved from 454.328 nm to 110.449 nm while the SSD depth is reduced by 94%from 40μm to 2.379μm.The multi-step grinding technique proposed in this paper can guide the fabrication of the hemispherical resonator.展开更多
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of...We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.展开更多
A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an ...A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.展开更多
Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechani?cal and physical properties. It is detrimental to the strength,performance and lifetime of a machined ...Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechani?cal and physical properties. It is detrimental to the strength,performance and lifetime of a machined part. To manu?facture a high quality part,it is necessary to detect and remove the machining induced subsurface damage by the subsequent processes. However,subsurface damage is often covered with a smearing layer generated in a machining process,it is rather di cult to directly observe and detect by optical microscopy. An e cient detection of subsur?face damage directly leads to quality improvement and time saving for machining of hard and brittle materials. This paper presents a review of the methods for detection of subsurface damage,both destructive and non?destructive. Although more reliable,destructive methods are typically time?consuming and confined to local damage infor?mation. Non?destructive methods usually su er from uncertainty factors,but may provide global information on subsurface damage distribution. These methods are promising because they can provide a capacity of rapid scan and detection of subsurface damage in spatial distribution.展开更多
Subsurface defects were fluorescently tagged with nanoscale quantum dots and scanned layer by layer using confocal fluorescence microscopy to obtain images at various depths. Subsurface damage depths of fused silica o...Subsurface defects were fluorescently tagged with nanoscale quantum dots and scanned layer by layer using confocal fluorescence microscopy to obtain images at various depths. Subsurface damage depths of fused silica optics were characterized quantitatively by changes in the fluorescence intensity of feature points. The fluorescence intensity vs scan depth revealed that the maximum fluorescence intensity decreases sharply when the scan depth exceeds a critical value. The subsurface damage depth could be determined by the actual embedded depth of the quantum dots. Taper polishing and magnetorheological finishing were performed under the same conditions to verify the effectiveness of the nondestructive fluorescence method. The results indicated that the quantum dots effectively tagged subsurface defects of fused-silica optics, and that the nondestructive detection method could effectively evaluate subsurface damage depths.展开更多
A theoretical model of relationship between subsurface damage and surface roughness was established to realize rapid and non-destructive measurement of subsurface damage of ground optical materials.Postulated conditio...A theoretical model of relationship between subsurface damage and surface roughness was established to realize rapid and non-destructive measurement of subsurface damage of ground optical materials.Postulated condition of the model was that subsurface damage depth and peak-to-valley surface roughness are equal to depth of radial and lateral cracks in brittle surface induced by small-radius(radius≤200 μm)spherical indenter,respectively.And contribution of elastic stress field to the radial cracks propagation was also considered in the loading cycle.Subsurface damage depth of ground BK7 glasses was measured by magnetorheological finishing spot technique to validate theoretical ratio of subsurface damage to surface roughness.The results show that the ratio is directly proportional to load of abrasive grains and hardness of optical materials,while inversely proportional to granularity of abrasive grains and fracture toughness of optical materials.Moreover,the influence of the load and fracture toughness on the ratio is more significant than the granularity and hardness,respectively.The measured ratios of 80 grit and 120 grit fixed abrasive grinding of BK7 glasses are 5.8 and 5.4,respectively.展开更多
Potassium dihydrogen phosphate （KDP） is an important electro-optic crystal, often used for frequency conversion and Pockels cells in large aperture laser systems. To investigate the influence of anisotropy to the de...Potassium dihydrogen phosphate （KDP） is an important electro-optic crystal, often used for frequency conversion and Pockels cells in large aperture laser systems. To investigate the influence of anisotropy to the depth of subsurface damage and the profiles of cracks in subsurface of KDP crystal, an experimental study was made to obtain the form of subsurface damage produced by scratches on KDP crystal in [100], [120] and [110] crystal directions on （001） crystal plane. The results indicated that there were great differences between depth and crack shape in different directions. For many slip planes in KDP, the plastic deformation and cracks generated under pressure in the subsurface were complex. Fluctuations of subsurface damage depth at transition point were attributed to the deformation of the surface which consumed more energy when the surface deformation changed from the mixed region of brittle and plastic to the complete brittle region along the scratch. Also, the process of subsurface damage from shallow to deep, from dislocation to big crack in KDP crystal with the increase of radial force and etch pit on different crystal plane were obtained. Because crystallographic orientation and processing orientation was different, etching pits on （100） crystal plane were quadrilateral while on （110） plane and （120） plane were trapezoidal and triangular, respectively.展开更多
In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching.Under UV illumination,SSD acts as a photoluminescence-blac...In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching.Under UV illumination,SSD acts as a photoluminescence-black defect.The selective photo-chemical etching reveals SSD as the ridge-like defect.It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion.The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of scratches.This means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC wafers.SSD is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP).展开更多
This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this meth...This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.展开更多
The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasiv...The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways.展开更多
Laser-induced damage in fused silica optics greatly restricts the performances of laser facilities. Gray haze damage,which is always initiated on ceria polished optics, is one of the most important damage morphologies...Laser-induced damage in fused silica optics greatly restricts the performances of laser facilities. Gray haze damage,which is always initiated on ceria polished optics, is one of the most important damage morphologies in fused silica optics.In this paper, the laser-induced gray haze damages of four fused silica samples polished with CeO2, Al2O3, ZrO2, and colloidal silica slurries are investigated. Four samples all present gray haze damages with much different damage densities.Then, the polishing-induced contaminant and subsurface damages in four samples are analyzed. The results reveal that the gray haze damages could be initiated on the samples without Ce contaminant and are inclined to show a tight correlation with the shallow subsurface damages.展开更多
Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to caus...Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to cause significant surface crack and subsurface damage. This work proposed modifying SiC surface properties by ion implantation to improve machining efficiency, suppress surface crack, and reduce damage. High-energy ion implantation disrupted the SiC crystal lattice, reducing hardness and elastic modulus while increasing brittle-ductile transition depth, thus changing the removal mode from brittle fracture to plastic removal. Theoretical models of material removal rate and surface roughness were established for abrasive polishing of the SiC wafers. Polishing experiments were conducted on ion-implanted, modified SiC samples. The improvement mechanisms of ion implantation on surface damage, removal rate, morphology, and residual stress were investigated. The effect of ion implantation on the polished surface quality of SiC was investigated through orthogonal experiments. The results showed that ion implantation can significantly improve the average material removal rate of the SiC samples. Additionally, the ion-implanted samples had exhibited remarkable reductions in surface roughness, surface damage, and tensile residual stress.展开更多
Due to the high hardness and low fracture toughness of the single crystal silicon(SCS),it is highly susceptible to microscopic cracks and subsurface damage during processing.In this paper,we propose to adjust the mech...Due to the high hardness and low fracture toughness of the single crystal silicon(SCS),it is highly susceptible to microscopic cracks and subsurface damage during processing.In this paper,we propose to adjust the mechanical properties of SCS by cold plasma jet,and systematically investigate the influences of the plasma on material deformation and damage mechanisms by nanoscratch tests.The results indicate that the plasma can increase the critical normal force for the plastic-brittle(P-B)conversion of SCS.Compared with the ordinary nanoscratch test,the critical force for P-B conversion of plasma-assisted scratching at 1μm/s can increase from 43.6 to 66.4 mN.Increasing the scratching speed under ordinary conditions can enhance the plastic deformability of SCS to some extent,but its effect is not as effective as that of plasma;in addition,the increased scratching speed causes the shear bands(SBs)to lack time to propagate,so the quantity of SBs under plasma-assisted scratching at 10μm/s is reduced compared to 1μm/s.From subsurface damage topographies,the highly localized amorphous SBs cause the generation of subsurface cracks.The cold plasma can alleviate cracks on the scratched subsurface of SCS by introducing multiple SBs and stacking faults.This paper may provide a novel strategy for high-efficiency and low-damage ultra-precision machining of hard and brittle materials.展开更多
Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD a...Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing(CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength.展开更多
Monocrystalline beta-phase gallium oxide (β-Ga_(2)O_(3)) is a promising ultrawide bandgap semiconductor material. However, the deformation mechanism in ultraprecision machining has not yet been revealed. The aim of t...Monocrystalline beta-phase gallium oxide (β-Ga_(2)O_(3)) is a promising ultrawide bandgap semiconductor material. However, the deformation mechanism in ultraprecision machining has not yet been revealed. The aim of this study is to investigate the damage pattern and formation mechanism of monocrystalline β-Ga_(2)O_(3)in different grinding processes. Transmission electron microscopy was used to observe the subsurface damage in rough, fine, and ultrafine grinding processes. Nanocrystals and stacking faults existed in all three processes, dislocations and twins were observed in the rough and fine grinding processes, cracks were also observed in the rough grinding process, and amorphous phase were only present in the ultrafine grinding process. The subsurface damage thickness of the samples decreased with the reduction in the grit radius and the grit depth of cut. Subsurface damage models for grinding process were established on the basis of the grinding principle, revealing the mechanism of the mechanical effect of grits on the damage pattern. The formation of nanocrystals and amorphous phase was related to the grinding conditions and material characteristics. It is important to investigate the ultraprecision grinding process of monocrystalline β-Ga_(2)O_(3). The results in this work are supposed to provide guidance for the damage control of monocrystalline β-Ga_(2)O_(3)grinding process.展开更多
The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyz...The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.展开更多
High-speed machining(HSM) has been studied for several decades and has potential application in various industries, including the automobile and aerospace industries. However,the underlying mechanisms of HSM have not ...High-speed machining(HSM) has been studied for several decades and has potential application in various industries, including the automobile and aerospace industries. However,the underlying mechanisms of HSM have not been formally reviewed thus far. This article focuses on the solid mechanics framework of adiabatic shear band(ASB) onset and material metallurgical microstructural evolutions in HSM. The ASB onset is described using partial differential systems. Several factors in HSM were considered in the systems, and the ASB onset conditions were obtained by solving these systems or applying the perturbation method to the systems. With increasing machining speed, an ASB can be depressed and further eliminated by shock pressure. The damage observed in HSM exhibits common features. Equiaxed fine grains produced by dynamic recrystallization widely cause damage to ductile materials, and amorphization is the common microstructural evolution in brittle materials. Based on previous studies, potential mechanisms for the phenomena in HSM are proposed. These include the thickness variation of the white layer of ductile materials. These proposed mechanisms would be beneficial to deeply understanding the various phenomena in HSM.展开更多
Ceramic matrix composites(CMCs)are highly promising materials for the next generation of aero-engines.However,machining of CMCs suffers from low efficiency and poor surfacefinish,which presents an obstacle to their wide...Ceramic matrix composites(CMCs)are highly promising materials for the next generation of aero-engines.However,machining of CMCs suffers from low efficiency and poor surfacefinish,which presents an obstacle to their wider application.To overcome these problems,this study investigates high-efficiency deep grinding of CMCs,focusing on the effects of grinding depth.The results show that both the sur-face roughness and the depth of subsurface damage(SSD)are insensitive to grinding depth.The material removal rate can be increased sixfold by increasing the grinding depth,while the surface roughness and SSD depth increase by only about 10%.Moreover,it is found that the behavior of material removal is strongly dependent on grinding depth.As the grinding depth is increased,fibers are removed in smaller sizes,with thefiber length in chips being reduced by about 34%.However,too large a grinding depth will result in blockage by chip powder,which leads to a dramatic increase in the ratio of tangential to normal grinding forces.This study demonstrates that increasing the depth of cut is an effective approach to improve the machining efficiency of CMCs,while maintaining a good surfacefin-ish.It provides the basis for the further development of high-performance grinding methods for CMCs,which should facilitate their wider application.展开更多
The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained afte...The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy （OM）, atomic force microscopy （AFM） and step profilometry. KOH etching and high resolution X-ray diffractometry （H RXRD） were applied to evaluate the subsurface damage of 6H-SiC substrates.展开更多
基金supported by the National Key Research and Development Program of China(2022YFB3605902)the National Natural Science Foundation of China(52375411,52293402)。
文摘Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and subsurface damage depth(SDD)are crucial indicators for evaluating the surface quality of these materials after grinding.Existing prediction models lack general applicability and do not accurately account for the complex material behavior under grinding conditions.This paper introduces novel models for predicting both surface roughness and SDD in hard and brittle semiconductor materials.The surface roughness model uniquely incorporates the material’s elastic recovery properties,revealing the significant impact of these properties on prediction accuracy.The SDD model is distinguished by its analysis of the interactions between abrasive grits and the workpiece,as well as the mechanisms governing stress-induced damage evolution.The surface roughness model and SDD model both establish a stable relationship with the grit depth of cut(GDC).Additionally,we have developed an analytical relationship between the GDC and grinding process parameters.This,in turn,enables the establishment of an analytical framework for predicting surface roughness and SDD based on grinding process parameters,which cannot be achieved by previous models.The models were validated through systematic experiments on three different semiconductor materials,demonstrating excellent agreement with experimental data,with prediction errors of 6.3%for surface roughness and6.9%for SDD.Additionally,this study identifies variations in elastic recovery and material plasticity as critical factors influencing surface roughness and SDD across different materials.These findings significantly advance the accuracy of predictive models and broaden their applicability for grinding hard and brittle semiconductor materials.
基金This work was supported by the National Key Research and Development Program of China(No.2022YFB3403600)the National Natural Science Foundation of China(No.52293403)Self-Planned Task of State Key Laboratory of Robotics and System(HIT)(No.SKLRS202204C).
文摘As for the ultra-precision grinding of the hemispherical fused silica resonator,due to the hard and brittle nature of fused silica,subsurface damage(SSD)is easily generated,which enormously influences the performance of such components.Hence,ultra-precision grinding experiments are carried out to investigate the surface/subsurface quality of the hemispherical resonator machined by the small ball-end fine diamond grinding wheel.The influence of grinding parameters on the surface roughness(SR)and SSD depth of fused silica samples is then analyzed.The experimental results indicate that the SR and SSD depth decreased with the increase of grinding speed and the decrease of feed rate and grinding depth.In addition,based on the material strain rate and the maximum undeformed chip thickness,the effect of grinding parameters on the subsurface damage mechanism of fused silica samples is analyzed.Furthermore,a multi-step ultra-precision grinding technique of the hemispherical resonator is proposed based on the interaction influence between grinding depth and feed rate.Finally,the hemispherical resonator is processed by the proposed grinding technique,and the SR is improved from 454.328 nm to 110.449 nm while the SSD depth is reduced by 94%from 40μm to 2.379μm.The multi-step grinding technique proposed in this paper can guide the fabrication of the hemispherical resonator.
文摘We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.
文摘A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.
基金Supported by National Natural Science Foundation of China(Grant No.51575084)the Science Fund for Creative Research Groups of NSFC(Grant No.51621064)the Science Challenge Project(Grant No.JCKY2016212A506–0101)
文摘Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechani?cal and physical properties. It is detrimental to the strength,performance and lifetime of a machined part. To manu?facture a high quality part,it is necessary to detect and remove the machining induced subsurface damage by the subsequent processes. However,subsurface damage is often covered with a smearing layer generated in a machining process,it is rather di cult to directly observe and detect by optical microscopy. An e cient detection of subsur?face damage directly leads to quality improvement and time saving for machining of hard and brittle materials. This paper presents a review of the methods for detection of subsurface damage,both destructive and non?destructive. Although more reliable,destructive methods are typically time?consuming and confined to local damage infor?mation. Non?destructive methods usually su er from uncertainty factors,but may provide global information on subsurface damage distribution. These methods are promising because they can provide a capacity of rapid scan and detection of subsurface damage in spatial distribution.
基金Project(JCKY2016212A506-0503) supported by the Science Challenge Project of ChinaProject(51475106) supported by the National Natural Science Foundation of China
文摘Subsurface defects were fluorescently tagged with nanoscale quantum dots and scanned layer by layer using confocal fluorescence microscopy to obtain images at various depths. Subsurface damage depths of fused silica optics were characterized quantitatively by changes in the fluorescence intensity of feature points. The fluorescence intensity vs scan depth revealed that the maximum fluorescence intensity decreases sharply when the scan depth exceeds a critical value. The subsurface damage depth could be determined by the actual embedded depth of the quantum dots. Taper polishing and magnetorheological finishing were performed under the same conditions to verify the effectiveness of the nondestructive fluorescence method. The results indicated that the quantum dots effectively tagged subsurface defects of fused-silica optics, and that the nondestructive detection method could effectively evaluate subsurface damage depths.
基金Project(50375156) supported by the National Natural Science Foundation of China
文摘A theoretical model of relationship between subsurface damage and surface roughness was established to realize rapid and non-destructive measurement of subsurface damage of ground optical materials.Postulated condition of the model was that subsurface damage depth and peak-to-valley surface roughness are equal to depth of radial and lateral cracks in brittle surface induced by small-radius(radius≤200 μm)spherical indenter,respectively.And contribution of elastic stress field to the radial cracks propagation was also considered in the loading cycle.Subsurface damage depth of ground BK7 glasses was measured by magnetorheological finishing spot technique to validate theoretical ratio of subsurface damage to surface roughness.The results show that the ratio is directly proportional to load of abrasive grains and hardness of optical materials,while inversely proportional to granularity of abrasive grains and fracture toughness of optical materials.Moreover,the influence of the load and fracture toughness on the ratio is more significant than the granularity and hardness,respectively.The measured ratios of 80 grit and 120 grit fixed abrasive grinding of BK7 glasses are 5.8 and 5.4,respectively.
基金supported by Key National Natural Science Foundation of China (Grant No. 50535020)
文摘Potassium dihydrogen phosphate （KDP） is an important electro-optic crystal, often used for frequency conversion and Pockels cells in large aperture laser systems. To investigate the influence of anisotropy to the depth of subsurface damage and the profiles of cracks in subsurface of KDP crystal, an experimental study was made to obtain the form of subsurface damage produced by scratches on KDP crystal in [100], [120] and [110] crystal directions on （001） crystal plane. The results indicated that there were great differences between depth and crack shape in different directions. For many slip planes in KDP, the plastic deformation and cracks generated under pressure in the subsurface were complex. Fluctuations of subsurface damage depth at transition point were attributed to the deformation of the surface which consumed more energy when the surface deformation changed from the mixed region of brittle and plastic to the complete brittle region along the scratch. Also, the process of subsurface damage from shallow to deep, from dislocation to big crack in KDP crystal with the increase of radial force and etch pit on different crystal plane were obtained. Because crystallographic orientation and processing orientation was different, etching pits on （100） crystal plane were quadrilateral while on （110） plane and （120） plane were trapezoidal and triangular, respectively.
基金supported by “Pioneer” and “Leading Goose”R&D Program of Zhejiang (Grant No. 2022C01021)National Key Research and Development Program of China (Grant No.2018YFB2200101)+3 种基金National Natural Science Foundation of China (Grant Nos. 91964107, 61774133)Fundamental Research Funds for the Central Universities (Grant No.2018XZZX003-02)Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005)Zhejiang University Education Foundation Global Partnership Fund
文摘In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching.Under UV illumination,SSD acts as a photoluminescence-black defect.The selective photo-chemical etching reveals SSD as the ridge-like defect.It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion.The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of scratches.This means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC wafers.SSD is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP).
基金supported by the National Natural Science Foundation of China(52035009,52005243)the Science and Technology Innovation Committee of Shenzhen Municipality(JCYJ20200109141003910,GJHZ20180928155412525)。
文摘This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.
基金supported by the National Natural Science Foundation of China(No.51375237)the Postdoctoral Science Foundation of China(No.2015T80547)
文摘The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways.
文摘Laser-induced damage in fused silica optics greatly restricts the performances of laser facilities. Gray haze damage,which is always initiated on ceria polished optics, is one of the most important damage morphologies in fused silica optics.In this paper, the laser-induced gray haze damages of four fused silica samples polished with CeO2, Al2O3, ZrO2, and colloidal silica slurries are investigated. Four samples all present gray haze damages with much different damage densities.Then, the polishing-induced contaminant and subsurface damages in four samples are analyzed. The results reveal that the gray haze damages could be initiated on the samples without Ce contaminant and are inclined to show a tight correlation with the shallow subsurface damages.
基金support from the China Postdoctoral Science Foundation(No.2023M742735)the Postdoctoral Fellowship Program of CPSF,China(No.GZC20232029)+5 种基金the National Natural Science Foundation of China(No.52475530)the Shaanxi Postdoctoral Science Foundation,China(No.2023BSHEDZZ175)the Innovation Capability Support Program of Shaanxi Province,China(No.2021TD-23)the Key Industrial Chain Core Technology Research Project in Xi’an,China(No.23LLRH0029)the Natural Science Basic Research Program of Shaanxi,China(No.2024JC-YBQN-0490)the Fundamental Research Funds for the Central Universities,China(No.ZYTS24023).
文摘Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to cause significant surface crack and subsurface damage. This work proposed modifying SiC surface properties by ion implantation to improve machining efficiency, suppress surface crack, and reduce damage. High-energy ion implantation disrupted the SiC crystal lattice, reducing hardness and elastic modulus while increasing brittle-ductile transition depth, thus changing the removal mode from brittle fracture to plastic removal. Theoretical models of material removal rate and surface roughness were established for abrasive polishing of the SiC wafers. Polishing experiments were conducted on ion-implanted, modified SiC samples. The improvement mechanisms of ion implantation on surface damage, removal rate, morphology, and residual stress were investigated. The effect of ion implantation on the polished surface quality of SiC was investigated through orthogonal experiments. The results showed that ion implantation can significantly improve the average material removal rate of the SiC samples. Additionally, the ion-implanted samples had exhibited remarkable reductions in surface roughness, surface damage, and tensile residual stress.
基金Supported by National Natural Science Foundation of China(Grant No.52475430)the Fundamental Research Funds for the Central Universities(Grant No.DUT23YG118).
文摘Due to the high hardness and low fracture toughness of the single crystal silicon(SCS),it is highly susceptible to microscopic cracks and subsurface damage during processing.In this paper,we propose to adjust the mechanical properties of SCS by cold plasma jet,and systematically investigate the influences of the plasma on material deformation and damage mechanisms by nanoscratch tests.The results indicate that the plasma can increase the critical normal force for the plastic-brittle(P-B)conversion of SCS.Compared with the ordinary nanoscratch test,the critical force for P-B conversion of plasma-assisted scratching at 1μm/s can increase from 43.6 to 66.4 mN.Increasing the scratching speed under ordinary conditions can enhance the plastic deformability of SCS to some extent,but its effect is not as effective as that of plasma;in addition,the increased scratching speed causes the shear bands(SBs)to lack time to propagate,so the quantity of SBs under plasma-assisted scratching at 10μm/s is reduced compared to 1μm/s.From subsurface damage topographies,the highly localized amorphous SBs cause the generation of subsurface cracks.The cold plasma can alleviate cracks on the scratched subsurface of SCS by introducing multiple SBs and stacking faults.This paper may provide a novel strategy for high-efficiency and low-damage ultra-precision machining of hard and brittle materials.
基金supported by the National Natural Science Foundation of China (Grant Nos. U20A6001, 11625207, 11902292, and 11921002)the Zhejiang Province Key Research and Development Project (Grant Nos.2019C05002, 2020C05004, and 2021C01183)。
文摘Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing(CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength.
基金the National Natural Science Foundation of China(Grant Nos.51975091,51991372,and 51735004)the National Key R&D Program of China(Grant No.2018YFB1201804-1)+1 种基金the Lab of Space Optoelectronic Measurement&Perception(LabSOMP-2019-05)Jiangsu Key Laboratory of Precision and Micro-Manufacturing Technology.
文摘Monocrystalline beta-phase gallium oxide (β-Ga_(2)O_(3)) is a promising ultrawide bandgap semiconductor material. However, the deformation mechanism in ultraprecision machining has not yet been revealed. The aim of this study is to investigate the damage pattern and formation mechanism of monocrystalline β-Ga_(2)O_(3)in different grinding processes. Transmission electron microscopy was used to observe the subsurface damage in rough, fine, and ultrafine grinding processes. Nanocrystals and stacking faults existed in all three processes, dislocations and twins were observed in the rough and fine grinding processes, cracks were also observed in the rough grinding process, and amorphous phase were only present in the ultrafine grinding process. The subsurface damage thickness of the samples decreased with the reduction in the grit radius and the grit depth of cut. Subsurface damage models for grinding process were established on the basis of the grinding principle, revealing the mechanism of the mechanical effect of grits on the damage pattern. The formation of nanocrystals and amorphous phase was related to the grinding conditions and material characteristics. It is important to investigate the ultraprecision grinding process of monocrystalline β-Ga_(2)O_(3). The results in this work are supposed to provide guidance for the damage control of monocrystalline β-Ga_(2)O_(3)grinding process.
基金This study was financially supported by the National Natural Science Foundation of China in Major Project Program (No. 50390061)the National Science Fund for Distinguished Young Scholars (No. 50325518).
文摘The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.
基金support of the Shenzhen Science and Technology Innovation Commission under Project Numbers KQTD20190929172505711,JSGG20210420091802007, and JCYJ20210324115413036Guangdong Provincial Department of Science and Technology under Project Number K22333004。
文摘High-speed machining(HSM) has been studied for several decades and has potential application in various industries, including the automobile and aerospace industries. However,the underlying mechanisms of HSM have not been formally reviewed thus far. This article focuses on the solid mechanics framework of adiabatic shear band(ASB) onset and material metallurgical microstructural evolutions in HSM. The ASB onset is described using partial differential systems. Several factors in HSM were considered in the systems, and the ASB onset conditions were obtained by solving these systems or applying the perturbation method to the systems. With increasing machining speed, an ASB can be depressed and further eliminated by shock pressure. The damage observed in HSM exhibits common features. Equiaxed fine grains produced by dynamic recrystallization widely cause damage to ductile materials, and amorphization is the common microstructural evolution in brittle materials. Based on previous studies, potential mechanisms for the phenomena in HSM are proposed. These include the thickness variation of the white layer of ductile materials. These proposed mechanisms would be beneficial to deeply understanding the various phenomena in HSM.
基金supported by the National Natural Science Foundation of China(Grant Nos.92060203,52105453,and 92360304)the Science Center for Gas Turbine Project(No.P2022-A-IV-002-001).
文摘Ceramic matrix composites(CMCs)are highly promising materials for the next generation of aero-engines.However,machining of CMCs suffers from low efficiency and poor surfacefinish,which presents an obstacle to their wider application.To overcome these problems,this study investigates high-efficiency deep grinding of CMCs,focusing on the effects of grinding depth.The results show that both the sur-face roughness and the depth of subsurface damage(SSD)are insensitive to grinding depth.The material removal rate can be increased sixfold by increasing the grinding depth,while the surface roughness and SSD depth increase by only about 10%.Moreover,it is found that the behavior of material removal is strongly dependent on grinding depth.As the grinding depth is increased,fibers are removed in smaller sizes,with thefiber length in chips being reduced by about 34%.However,too large a grinding depth will result in blockage by chip powder,which leads to a dramatic increase in the ratio of tangential to normal grinding forces.This study demonstrates that increasing the depth of cut is an effective approach to improve the machining efficiency of CMCs,while maintaining a good surfacefin-ish.It provides the basis for the further development of high-performance grinding methods for CMCs,which should facilitate their wider application.
基金supported by the National Natural Science Foundation of China(Grant No.60025409 and No.50472068)supported by the National High-Tech Research and Development Program of China(863 Program,Grant No.2001AA311080).
文摘The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy （OM）, atomic force microscopy （AFM） and step profilometry. KOH etching and high resolution X-ray diffractometry （H RXRD） were applied to evaluate the subsurface damage of 6H-SiC substrates.
