A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic....A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic. This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate. The high electric field around the drain is reduced by the n^＋-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases. The new structure features high breakdown voltage, low on-resistance,and charge balance in the drift region.展开更多
A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage （BV） of conventional super junction-LDMOS. The key feature of the new concept i...A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage （BV） of conventional super junction-LDMOS. The key feature of the new concept is that a partial buried layer is implemented which compensates for the charge interaction between the p-substrate and SJ region,realizing high breakdown voltage and low on-resistance. Numerical simulation results indicate that the proposed device features high breakdown voltage,low on-resistance,and reduced sensitivity to doping imbalance in the pillars. In addition, the proposed device is compatible with smart power technology.展开更多
Potassium-ion batteries(PIBs)have attracted enormous attention due to the abundance of potassium resources,low cost,fast ionic conductivity of electrolyte and relatively high operating voltage.Despite great effo rts a...Potassium-ion batteries(PIBs)have attracted enormous attention due to the abundance of potassium resources,low cost,fast ionic conductivity of electrolyte and relatively high operating voltage.Despite great effo rts and progress,researches on PIBs are still at the initial stage,especially in the emerging field of flexible and wearable PIBs.The inevitable challenges for PIBs include low reversible capacity,unsatisfactory cycling stability and insufficient energy density,the solution to which mostly relies on designing adva nced electrodes.Binder-free electrodes have emerged as promising electrode architecture for PIBs.Such electrodes avoid the use of insulating binders,which can be designed with various synergistic functional materials to address the aforementioned PIB issues and be endowed with flexibility/wearability.In this review,we mainly summarize the recent progress on binde r-free electrodes for PIBs,with the focus on the methodologies,detailed strategies and functional materials for electrode construction.One strategy for binder-free electrodes is to assemble free-standing architecture with the help of carbon nanotubes(CNTs),graphitic fibers,and other carbon or mechanically robust materials,either alone or in combination.The other effective strategy is current collector substrate-assisted direct growth,including the use of carbon cloth,metal.MXenes and other conductive substrates.Additionally,challenges and research opportunities are put forward at the end as the guidance for future development of binder-free PIB devices.展开更多
The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancin...The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancing the electric field of the dielectric buried layer is investigated for improving the BV of super junction LDMOSFET （SJ-LDMOS）. High density interface charges enhance the electric field in the buried oxide （BOX） layer to increase the block voltage of BOX, which suppresses the SAD effect to achieve the charge balance of SJ. In order to obtain the linear enhancement of electric field, SO1 SJ-LDMOS with trenched BOX is presented. Because the trenched BOX self-adaptively collects holes according to the variable electric field strength, the approximate linear charge distribution is formed on the surface of the BOX to enhance the electric field according to the need. As a result, the charge balance between N and P pillars of SJ is achieved, which improves the BV of SJ-LDMOS to close that of the idea SJ structure.展开更多
A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-a...A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.展开更多
文摘A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic. This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate. The high electric field around the drain is reduced by the n^＋-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases. The new structure features high breakdown voltage, low on-resistance,and charge balance in the drift region.
文摘A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage （BV） of conventional super junction-LDMOS. The key feature of the new concept is that a partial buried layer is implemented which compensates for the charge interaction between the p-substrate and SJ region,realizing high breakdown voltage and low on-resistance. Numerical simulation results indicate that the proposed device features high breakdown voltage,low on-resistance,and reduced sensitivity to doping imbalance in the pillars. In addition, the proposed device is compatible with smart power technology.
基金supported by the National Natural Science Foundation of China(Nos.51972257,51672205 and 51872104)the National Key R&D Program of China(No.2016YFA0202602)。
文摘Potassium-ion batteries(PIBs)have attracted enormous attention due to the abundance of potassium resources,low cost,fast ionic conductivity of electrolyte and relatively high operating voltage.Despite great effo rts and progress,researches on PIBs are still at the initial stage,especially in the emerging field of flexible and wearable PIBs.The inevitable challenges for PIBs include low reversible capacity,unsatisfactory cycling stability and insufficient energy density,the solution to which mostly relies on designing adva nced electrodes.Binder-free electrodes have emerged as promising electrode architecture for PIBs.Such electrodes avoid the use of insulating binders,which can be designed with various synergistic functional materials to address the aforementioned PIB issues and be endowed with flexibility/wearability.In this review,we mainly summarize the recent progress on binde r-free electrodes for PIBs,with the focus on the methodologies,detailed strategies and functional materials for electrode construction.One strategy for binder-free electrodes is to assemble free-standing architecture with the help of carbon nanotubes(CNTs),graphitic fibers,and other carbon or mechanically robust materials,either alone or in combination.The other effective strategy is current collector substrate-assisted direct growth,including the use of carbon cloth,metal.MXenes and other conductive substrates.Additionally,challenges and research opportunities are put forward at the end as the guidance for future development of binder-free PIB devices.
基金Project supported by the National Natural Science Foundation of China(No.60576052)the Shanxi Youth Science and Technology Research Foundation of China(No.2010021015-3)
文摘The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancing the electric field of the dielectric buried layer is investigated for improving the BV of super junction LDMOSFET （SJ-LDMOS）. High density interface charges enhance the electric field in the buried oxide （BOX） layer to increase the block voltage of BOX, which suppresses the SAD effect to achieve the charge balance of SJ. In order to obtain the linear enhancement of electric field, SO1 SJ-LDMOS with trenched BOX is presented. Because the trenched BOX self-adaptively collects holes according to the variable electric field strength, the approximate linear charge distribution is formed on the surface of the BOX to enhance the electric field according to the need. As a result, the charge balance between N and P pillars of SJ is achieved, which improves the BV of SJ-LDMOS to close that of the idea SJ structure.
基金Project supported by the National Natural Science Foundation of China(No.61306094)the Project of Sichuan Provincial Education Department(No.13ZA0089)the Research Fund for the Middle and Youth Academic Leader of Chengdu University of Information Technology(No.J201301)
文摘A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.
