Monolayer molybdenum disulfide(MoS_(2))has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness,dangling-bond-free flat surface,a...Monolayer molybdenum disulfide(MoS_(2))has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness,dangling-bond-free flat surface,and high electrical quality.Currently,high-quality monolayer MoS_(2)wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication,and thus transfer processes to a suitable substrate are typically required before the device can be processed.Here,we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering.By introducing substrate steps on growth substrate sapphire,high-κdielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS_(2).For the substrate with a maximum step density of 100μm^(−1),the gate capacitance can reach~1.87μF∙cm^(−2),while the interface trap state density(Dit)can be as low as~7.6×10^(10)cm^(−2)∙eV^(−1).The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of>96%,holding great promise for large-scale twodimensional(2D)integrated circuits.展开更多
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1202900 and 2021YFA1400502)the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(No.XDB30000000)+1 种基金the National Natural Science Foundation of China(NSFC)(Nos.61888102,11834017,61734001,62122084,12274447,and 12074412)the Key-Area Research and Development Program of Guangdong Province(No.2020B0101340001).
文摘Monolayer molybdenum disulfide(MoS_(2))has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness,dangling-bond-free flat surface,and high electrical quality.Currently,high-quality monolayer MoS_(2)wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication,and thus transfer processes to a suitable substrate are typically required before the device can be processed.Here,we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering.By introducing substrate steps on growth substrate sapphire,high-κdielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS_(2).For the substrate with a maximum step density of 100μm^(−1),the gate capacitance can reach~1.87μF∙cm^(−2),while the interface trap state density(Dit)can be as low as~7.6×10^(10)cm^(−2)∙eV^(−1).The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of>96%,holding great promise for large-scale twodimensional(2D)integrated circuits.
