We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RL...We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.展开更多
This study investigated the degradation and production of volatile fatty acids（VFAs）in the acidogenic phase reactor of a two-phase anaerobic system.20 mmol/L bromoethanesulfonic acid（BESA）was used to inhibit acido...This study investigated the degradation and production of volatile fatty acids（VFAs）in the acidogenic phase reactor of a two-phase anaerobic system.20 mmol/L bromoethanesulfonic acid（BESA）was used to inhibit acidogenic methanogens（which were present in the acidogenic phase reactor）from degrading VFAs.The impact of undissociated volatile fatty acids（un VFAs）on＂net＂VFAs production in the acidogenic phase reactor was then evaluated,with the exclusion of concurrent VFAs degradation.＂Net＂VFAs production from glucose degradation was partially inhibited at high un VFAs concentrations,with 59%,37% and 60% reduction in production rates at 2190 mg chemical oxygen demand（COD）/L undissociated acetic acid（un HAc）,2130 mg COD/L undissociated propionic acid（un HPr）and 2280 mg COD/L undissociated n-butyric acid（un HBu）,respectively.The profile of VFAs produced further indicated that while an un VFA can primarily affect its own formation,there were also un VFAs that affected the formation of other VFAs.展开更多
Frequency-selective surface （FSS） is a two-dimensional periodic structure consisting of a dielectric substrate and the metal units （or apertures） arranged periodically on it. When manufacturing the substrate, its ...Frequency-selective surface （FSS） is a two-dimensional periodic structure consisting of a dielectric substrate and the metal units （or apertures） arranged periodically on it. When manufacturing the substrate, its thickness and dielectric constant suffer process tolerances. This may induce the center frequency of the FSS to shift, and consequently influence its characteristics. In this paper, a bandpass FSS structure is designed. The units are the Jerusalem crosses arranged squarely. The mode-matching technique is used for simulation. The influence of the tolerances of the substrate＇s thickness and dielectric constant on the center frequency is analyzed. Results show that the tolerances of thickness and dielectric constant have different influences on the center frequency of the FSS. It is necessary to ensure the process tolerance of the dielectric constant in the design and manufacturing of the substrate in order to stabilize the center frequency.展开更多
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra...An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400603)the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)
文摘We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.
基金supported and administered by the Singapore National Research Foundation(NRF-CRP5-2009-2)
文摘This study investigated the degradation and production of volatile fatty acids（VFAs）in the acidogenic phase reactor of a two-phase anaerobic system.20 mmol/L bromoethanesulfonic acid（BESA）was used to inhibit acidogenic methanogens（which were present in the acidogenic phase reactor）from degrading VFAs.The impact of undissociated volatile fatty acids（un VFAs）on＂net＂VFAs production in the acidogenic phase reactor was then evaluated,with the exclusion of concurrent VFAs degradation.＂Net＂VFAs production from glucose degradation was partially inhibited at high un VFAs concentrations,with 59%,37% and 60% reduction in production rates at 2190 mg chemical oxygen demand（COD）/L undissociated acetic acid（un HAc）,2130 mg COD/L undissociated propionic acid（un HPr）and 2280 mg COD/L undissociated n-butyric acid（un HBu）,respectively.The profile of VFAs produced further indicated that while an un VFA can primarily affect its own formation,there were also un VFAs that affected the formation of other VFAs.
文摘Frequency-selective surface （FSS） is a two-dimensional periodic structure consisting of a dielectric substrate and the metal units （or apertures） arranged periodically on it. When manufacturing the substrate, its thickness and dielectric constant suffer process tolerances. This may induce the center frequency of the FSS to shift, and consequently influence its characteristics. In this paper, a bandpass FSS structure is designed. The units are the Jerusalem crosses arranged squarely. The mode-matching technique is used for simulation. The influence of the tolerances of the substrate＇s thickness and dielectric constant on the center frequency is analyzed. Results show that the tolerances of thickness and dielectric constant have different influences on the center frequency of the FSS. It is necessary to ensure the process tolerance of the dielectric constant in the design and manufacturing of the substrate in order to stabilize the center frequency.
基金Project supported by the National Natural Science Foundation of China(No.61674036)
文摘An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.
