A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-s...A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.展开更多
文摘A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.
