Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ...Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.展开更多
Sub-1 nm nanowires(SNWs)can not only be processed like polymers due to their polymer-analogue properties but also show multifunctions owing to their well-manipulated compositions and structures.Rationally designed and...Sub-1 nm nanowires(SNWs)can not only be processed like polymers due to their polymer-analogue properties but also show multifunctions owing to their well-manipulated compositions and structures.Rationally designed and engineered multicomponent heterostructure SNWs can further enhance their multifunction performance while it is very challenging to achieve such SNWs at sub-nanoscale.Herein,we synthesized Bi_(2)O_(3)-polyoxometalate heterostructure SNWs(PMB SNWs),and fabricated super-aligned PMB SNWs films(S-PMB SNWs films),which can serve as interlayers to efficiently suppress lithium polysulfide(LPS)shuttling,intrinsically promote the redox kinetics of the LPS conversion and substantially protect the Li anode.The lithium-sulfur(Li-S)battery with the S-PMB SNWs film as the interlayer showcases an ultralow capacity decay rate with 0.013%per cycle over 850 cycles.This study demonstrates the potential of heterostructure SNWs to improve the performance of Li-S batteries.展开更多
基金supported by National Science and Technology Major Project (2020AAA0109003)the support from Hangzhou Innovation Team Program (TD2022018)。
文摘Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.
基金supported by the Ministry of Science and Technology of China(2017YFA0700101,2016YFA0202801 and 2016YBF0100100)China Postdoctoral Science Foundation funded project(2020TQ0164)+7 种基金the Shuimu Tsinghua Scholar Programthe National Natural Science Foundation of China(22035004,51872283 and 21805273)Liaoning Bai Qian Wan Talents ProgramLiaoning Revitalization Talents Program(XLYC1807153)Dalian Institute of Chemical Physics(DICP ZZBS201708,DICP ZZBS201802 and DICP I202032)DICP&QIBEBT(DICP&QIBEBT UN201702)Dalian National Laboratory For Clean Energy(DNL)Cooperation FundCAS(DNL180310,DNL180308,DNL201912 and DNL201915)。
文摘Sub-1 nm nanowires(SNWs)can not only be processed like polymers due to their polymer-analogue properties but also show multifunctions owing to their well-manipulated compositions and structures.Rationally designed and engineered multicomponent heterostructure SNWs can further enhance their multifunction performance while it is very challenging to achieve such SNWs at sub-nanoscale.Herein,we synthesized Bi_(2)O_(3)-polyoxometalate heterostructure SNWs(PMB SNWs),and fabricated super-aligned PMB SNWs films(S-PMB SNWs films),which can serve as interlayers to efficiently suppress lithium polysulfide(LPS)shuttling,intrinsically promote the redox kinetics of the LPS conversion and substantially protect the Li anode.The lithium-sulfur(Li-S)battery with the S-PMB SNWs film as the interlayer showcases an ultralow capacity decay rate with 0.013%per cycle over 850 cycles.This study demonstrates the potential of heterostructure SNWs to improve the performance of Li-S batteries.
