期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
A 1-V 10-bit 80-MS/s 1.6-mW SAR ADC in 65-nm GP CMOS
1
作者 马俊 郭亚炜 +2 位作者 吴越 程旭 曾晓洋 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期162-171,共10页
This paper presents a 10-bit 80-MS/s successive approximation register(SAR) analog-to-digital converter (ADC) suitable for integration in a system on a chip(SoC).By using the top-plate-sample switching scheme an... This paper presents a 10-bit 80-MS/s successive approximation register(SAR) analog-to-digital converter (ADC) suitable for integration in a system on a chip(SoC).By using the top-plate-sample switching scheme and a split capacitive array structure,the total capacitance is dramatically reduced which leads to low power and high speed.Since the split structure makes the capacitive array highly sensitive to parasitic capacitance,a three-row layout method is applied to the layout design.To overcome the charge leakage in the nanometer process,a special input stage is proposed in the comparator.As 80 MS/s sampling rate for a 10-bit SAR ADC results in around 1 GHz logic control clock,and a tunable clock generator is implemented.The prototype was fabricated in 65 nm 1P9M (one-poly-nine-metal) GP(general purpose) CMOS technology.Measurement results show a peak signal-to-noise and distortion ratio(SINAD) of 48.3 dB and 1.6 mW total power consumption with a figure of merit(FOM) of 94.8 fJ/conversion-step. 展开更多
关键词 successive approximation register analog-to-digital converter split structure leakage current
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部