For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.展开更多
Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-v...Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.展开更多
This paper reports that an output window for optically pumped terahertz （THz） laser has been fabricated by depositing a capacitive nickel-mesh on a thick high-resistivity silicon substrate （approximating to 5 mm th...This paper reports that an output window for optically pumped terahertz （THz） laser has been fabricated by depositing a capacitive nickel-mesh on a thick high-resistivity silicon substrate （approximating to 5 mm thick）. Unlike the conventional process of depositing a gold film approximating to 100 nm on negative photoresist using electron-beam evaporation, a nickel film approximating to 1.5 μm thick is directly deposited on the clean surface of dielectric substrate using magnetron sputtering and then a positive photoresist is spun onto the nickel metal surface at 6000 r for 60 s. A transmittance spectrum of the output window in a certain frequency range （say, from zero to 1 THz） has been obtained by using THz time domain spectroscopy. Moreover a transmittance spectrum simulated numerically has also been estimated with respect to the output window using the transmission-line model （TLM） containing attenuation component from dielectric substrate. The simulation results show that the TLM can explain well the experimental curve in a certain frequency range from zero to 1 THz. Thus it is demonstrated that the improved optical component can be efficiently used as both output coupler and output window for optically pumped THz lasers.展开更多
Differential capacitive detection has been widely used in the displacement measurement of the proof mass of vibratory gyroscopes, but it did not achieve high resolutions in angle detection of rotational gyroscopes due...Differential capacitive detection has been widely used in the displacement measurement of the proof mass of vibratory gyroscopes, but it did not achieve high resolutions in angle detection of rotational gyroscopes due to restrictions in structure, theory, and interface circuitry. In this paper, a differential capacitive detection structure is presented to measure the tilt angle of the rotor of a novel rotational gyroscope. A mathematical model is built to study how the structure's capacitance changes with the rotor tilt angles. The relationship between differential capacitance and structural parameters is analyzed, and preliminarily optimized size parameters are adopted. A lownoise readout interface circuit is designed to convert differential capacitance changes to voltage signals. Rate table test results of the gyroscope show that the smallest resolvable tilt angle of the rotor is less than 0.47(0.00013?),and the nonlinearity of the angle detection structure is 0.33%, which can be further improved. The results indicate that the proposed detection structure and the circuitry are helpful for a high accuracy of the gyroscope.展开更多
基金Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Key Program of National Natural Science Foundation of China under Grant No 41330318+3 种基金the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
文摘For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
文摘Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.
基金Project supported by the Creative Foundation of Wuhan National Laboratory for Optoelectronics (Grant No. Z080007)partly by the National Basic Research Program of China (973 Program)(Grant No. 61328)
文摘This paper reports that an output window for optically pumped terahertz （THz） laser has been fabricated by depositing a capacitive nickel-mesh on a thick high-resistivity silicon substrate （approximating to 5 mm thick）. Unlike the conventional process of depositing a gold film approximating to 100 nm on negative photoresist using electron-beam evaporation, a nickel film approximating to 1.5 μm thick is directly deposited on the clean surface of dielectric substrate using magnetron sputtering and then a positive photoresist is spun onto the nickel metal surface at 6000 r for 60 s. A transmittance spectrum of the output window in a certain frequency range （say, from zero to 1 THz） has been obtained by using THz time domain spectroscopy. Moreover a transmittance spectrum simulated numerically has also been estimated with respect to the output window using the transmission-line model （TLM） containing attenuation component from dielectric substrate. The simulation results show that the TLM can explain well the experimental curve in a certain frequency range from zero to 1 THz. Thus it is demonstrated that the improved optical component can be efficiently used as both output coupler and output window for optically pumped THz lasers.
基金Project supported by the National Natural Basic Research Program(973)of China(No.2012CB934104)the National Natural Science Foundation of China(No.61071037)the Natural Science Foundation of Heilongjiang Province,China(No.F201418)
文摘Differential capacitive detection has been widely used in the displacement measurement of the proof mass of vibratory gyroscopes, but it did not achieve high resolutions in angle detection of rotational gyroscopes due to restrictions in structure, theory, and interface circuitry. In this paper, a differential capacitive detection structure is presented to measure the tilt angle of the rotor of a novel rotational gyroscope. A mathematical model is built to study how the structure's capacitance changes with the rotor tilt angles. The relationship between differential capacitance and structural parameters is analyzed, and preliminarily optimized size parameters are adopted. A lownoise readout interface circuit is designed to convert differential capacitance changes to voltage signals. Rate table test results of the gyroscope show that the smallest resolvable tilt angle of the rotor is less than 0.47(0.00013?),and the nonlinearity of the angle detection structure is 0.33%, which can be further improved. The results indicate that the proposed detection structure and the circuitry are helpful for a high accuracy of the gyroscope.
