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GeSn shortwave infrared LED array prepared on GeSn nanostrips for on-chip broad-spectrum light sources
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作者 QINXING HUANG XIANGQUAN LIU +7 位作者 JUN ZHENG YUPENG ZHU YAZHOU YANG JiNLAI CUI ZHI LIU YUHUA ZUO TAO MEN BUWEN CHENG 《Photonics Research》 2025年第6期1572-1578,共7页
A GeSn nanostrip grown by the rapid melting growth method has gradient Sn content along the strip,a very attractive approach for making an infrared broad-spectrum light source.In this work,by applying the Sn content d... A GeSn nanostrip grown by the rapid melting growth method has gradient Sn content along the strip,a very attractive approach for making an infrared broad-spectrum light source.In this work,by applying the Sn content distribution strategy. 展开更多
关键词 rapid melting growth method gesn nanostrip gradient sn applying sn content distribution strategy
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