This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of ...This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.展开更多
The stress and strain fields in self-organized growth coherent quantum dots （QD） structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjec...The stress and strain fields in self-organized growth coherent quantum dots （QD） structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can he directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.展开更多
This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with differe...This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot＇s self-organization.展开更多
A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on （001） substrate was presented. The three-dimensional finite element analysis for a...A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on （001） substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.展开更多
Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges ...Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges （both conduction band and valence band） of the InAs/CaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.展开更多
Graphene quantum dots(GQDs)refer to graphene fragments with a lateral dimension typically less than 100 nm,which possess unique electrical and optical properties due to the quantum confinement effect.In this study,we ...Graphene quantum dots(GQDs)refer to graphene fragments with a lateral dimension typically less than 100 nm,which possess unique electrical and optical properties due to the quantum confinement effect.In this study,we demonstrate that chemically derived graphene quantum dots show great potential for making highly stretchable and cost-effective strain sensors via an electron tunneling mechanism.Stretch-able strain sensors are critical devices for the field of flexible or wearable electronics which are expected to maintain function up to high strain values(>30%).However,strain sensors based on conventional materials(i.e.metal or semiconductors)or metal nanoparticles(e.g.gold or silver nanoparticles)only work within a small range of strain(i.e.the former have a working range<1%and the latter<3%).In this study,by simply dropcasting solution-processed GQDs between the interdigitated electrodes on polydimethylsiloxane,we obtained devices that can function in the range from 0.06%to over 50%ten-sile strain with both the sensitivity and working range conveniently adjustable by the concentration of GQDs applied.This study provides a new concept for practical applications of GQDs,revealing the poten-tial of this material for smart applications such as artificial skin,human-machine interfaces,and health monitoring.展开更多
In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots （QDs） with different wetting layer （WL） thickness, using the finite element me...In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots （QDs） with different wetting layer （WL） thickness, using the finite element method （FEM）. The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.展开更多
The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the ...The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.展开更多
Self-organization of PbS into quantum dots superlattices is demonstrated for the first lime, and hexaplanar colloidal crystals 1-10 mu m in size made from PbS quantum dots 4nm in diameter are shown in Transmission Ele...Self-organization of PbS into quantum dots superlattices is demonstrated for the first lime, and hexaplanar colloidal crystals 1-10 mu m in size made from PbS quantum dots 4nm in diameter are shown in Transmission Electron Microscope (TEM) micrograph, and the inner structures of the superlattices can be seen from the High Resolution Transmission Electron Microscope (HRTEM).展开更多
Quantum dot lasers have excellent characteristics such as temperature stability of threshold current and ultra-high material gain. Quantum dot structures fabricated by self-organized growth have high crystalline perfe...Quantum dot lasers have excellent characteristics such as temperature stability of threshold current and ultra-high material gain. Quantum dot structures fabricated by self-organized growth have high crystalline perfection, high quantum yield of radiative recombination and high size homogeneity. Main advantages and operating properties of quantum dot lasers fabricated by self-organized growth are briefly introduced.展开更多
Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs.High photon quality and indistinguishability of photons from different sources are critical f...Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs.High photon quality and indistinguishability of photons from different sources are critical for quantum information applications.The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g.temperature,electric,magnetic or strain fields.In this review,we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots.Using piezoelectric crystals like PMN-PT,the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly.Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure.Emission from light hole exciton can be tuned,and quantum dot containing nanostructure such as nanowires have been piezo-integrated.To ensure the indistinguishability of photons from distant emitters,the wavelength drift caused by piezo creep can be compensated by frequency feedback,which is verified by two-photon interference with photons from two stabilized sources.Therefore,strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.展开更多
This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution a...This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/AlN quantum dot.展开更多
We reported a low-cost and easy-to-make method to effectively generate quantum dot(QD)states in 2D hBN films for quantum emissions at room temperature by utilizing silica nanospheres,in comparison with the sophisticat...We reported a low-cost and easy-to-make method to effectively generate quantum dot(QD)states in 2D hBN films for quantum emissions at room temperature by utilizing silica nanospheres,in comparison with the sophisticated nanofabrication method reported in previous studies.The QDs created in 2D hBN films using silica nanospheres exhibit pronounced photon emissions with a good photo-stability in air,a narrow distribution of the emission peaks within the range of 580-620 nm,and a directional emission pattern,behaving as a single electric dipole.Our work develops the method of controllable fabrication of quantum emitters in 2D materials by using nano materials and structures.展开更多
Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, thei...Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.展开更多
Pulsed laser ablation epitaxial Strancky-Krastanow growth of self-organized complex oxide Ce:BaTiO3 quantum dots on MgO(100) substrates is demonstrated. Atomic force microscopy and X-ray diffraction are used to observ...Pulsed laser ablation epitaxial Strancky-Krastanow growth of self-organized complex oxide Ce:BaTiO3 quantum dots on MgO(100) substrates is demonstrated. Atomic force microscopy and X-ray diffraction are used to observe the structure and the growth process of the self-organized complex oxide quantum dots. The average dimension, height, and the density of self-organized complex oxide Ce:BaTiO3 quantum dots are given. The nonlinear refractive indexes of the wetting layer and the self-organized ordered quantum dots are determined by the single beam Z-scan method. The mechanisms of the nonlinear effect enhancement for these low-dimensional structure are discussed.展开更多
Within the effective-mass approximation,a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_（1-x）N cylindrical quantum dot.The electron couples with both branches of longitudin...Within the effective-mass approximation,a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_（1-x）N cylindrical quantum dot.The electron couples with both branches of longitudinal optical-like（LO-like）and transverse optical-like（TO-like）phonons and the built-in electric field are taken into account.The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states.Furthermore,the contribution of LO-like phonons to the binding energy is dominant,and the anisotropic angle and Al content influence on the binding energy are small.展开更多
Within the effective-mass and finite-height potential barrier approximation,a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate...Within the effective-mass and finite-height potential barrier approximation,a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate in wurtzite cylindrical GaN/Al_xGa_（1-x）N quantum dots（QDs） is performed using a variational approach.Numerical results show that the emission wavelength with strain effect is higher than that without strain effect when the QD height is large（〉 3.8 nm）,but the status is opposite when the QD height is small（〈 3.8 nm）.The height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to the strain effect.The emission wavelength decreases linearly and the electron-hole recombination rate increases almost linearly with applied hydrostatic pressure.The hydrostatic pressure has a remarkable influence on the emission wavelength for large QDs,and has a significant influence on the electron-hole recombination rate for small QDs.Furthermore,the present numerical outcomes are in qualitative agreement with previous experimental findings under zero pressure.展开更多
Taking into account anisotropy, nonparabolicity of the conduction band, and geometrical confinement, we discuss the heavy-hole excitonic states in a strained GaxIn1-xAs/GaAs quantum dot for various Ga alloy contents. ...Taking into account anisotropy, nonparabolicity of the conduction band, and geometrical confinement, we discuss the heavy-hole excitonic states in a strained GaxIn1-xAs/GaAs quantum dot for various Ga alloy contents. The strained quantum dot is considered as a spherical InAs dot surrounded by a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and Ga ion content is numerically measured. Interband optical energy with and without the parabolic effect is computed using structural confinement. The interband matrix element for different Ga concentrations is also calculated. The oscillator strength of interband transitions on the dot radius is studied at different Ga concentrations in the GaxIn1-xAs/GaAs quantum dot. Heavy-hole excitonic absorption spectra are recorded for various Ga alloy contents in the GaxIn1-xAs/GaAs quantum dot. Results show that oscillator strength diminishes when dot size decreases because of the dominance of the quantum size effect. Furthermore, exchange enhancement and exchange sDlitting increase as exciton confinement inereases.展开更多
基金supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314901)the National Natural Science Foundation of China (Grant No 60644004)High School Innovation and Introducing Intellect Project of China (Grant No B07005)
文摘This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.
文摘The stress and strain fields in self-organized growth coherent quantum dots （QD） structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can he directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.
基金supported by the National "973" Basic Research Program of China (Grant No 2003CB314901)the National NaturalScience Foundation of China (Grant No 60644004)the 111 Project of China (High School Innovation and Introducing Intellect Project of China) (Grant No B07005)
文摘This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot＇s self-organization.
基金This work was financially supported by the "973" National Basic Research Program of China (No. 2003CB314901)the National "863" High Technology Project of China (No. 2003AA311070)the Open Project of State Key Laboratory on Integrated Opto-electronics.
文摘A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on （001） substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.
基金Project supported by the National Basic Research Program of China (Grant No 2003CB314901)the National Natural Science Foundation of China (Grant No 60644004)the High School Innovation and Introducing Talent Project of China (Grant NoB07005)
文摘Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges （both conduction band and valence band） of the InAs/CaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.
基金support of a Griffith Publication Assis-tance Scholarship(PAS).Q.L.wishes to thank the support from Australian Research Council(Nos.DP160104089,IH 180100002,and DP 200101105).D.C.is grateful for the support of a Griffith Univer-sity New Researcher Grant.The authors are grateful for the support of centre of Microscopy and Microanalysis(CMM)at the University of Queensland for acquiring SEM and TEM images.The authors also thank the Queensland Node of Australian National Fabrication Fa-cility(ANFF)for their assistance in fabrication of photomasks.
文摘Graphene quantum dots(GQDs)refer to graphene fragments with a lateral dimension typically less than 100 nm,which possess unique electrical and optical properties due to the quantum confinement effect.In this study,we demonstrate that chemically derived graphene quantum dots show great potential for making highly stretchable and cost-effective strain sensors via an electron tunneling mechanism.Stretch-able strain sensors are critical devices for the field of flexible or wearable electronics which are expected to maintain function up to high strain values(>30%).However,strain sensors based on conventional materials(i.e.metal or semiconductors)or metal nanoparticles(e.g.gold or silver nanoparticles)only work within a small range of strain(i.e.the former have a working range<1%and the latter<3%).In this study,by simply dropcasting solution-processed GQDs between the interdigitated electrodes on polydimethylsiloxane,we obtained devices that can function in the range from 0.06%to over 50%ten-sile strain with both the sensitivity and working range conveniently adjustable by the concentration of GQDs applied.This study provides a new concept for practical applications of GQDs,revealing the poten-tial of this material for smart applications such as artificial skin,human-machine interfaces,and health monitoring.
基金Project supported by the National Natural Science Foundation of China （Grant No 90101004） and by the National Basic Research Program of China （Grant No G2000067102）.
文摘In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots （QDs） with different wetting layer （WL） thickness, using the finite element method （FEM）. The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201)the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2011RC0402)the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0261)
文摘The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.
文摘Self-organization of PbS into quantum dots superlattices is demonstrated for the first lime, and hexaplanar colloidal crystals 1-10 mu m in size made from PbS quantum dots 4nm in diameter are shown in Transmission Electron Microscope (TEM) micrograph, and the inner structures of the superlattices can be seen from the High Resolution Transmission Electron Microscope (HRTEM).
文摘Quantum dot lasers have excellent characteristics such as temperature stability of threshold current and ultra-high material gain. Quantum dot structures fabricated by self-organized growth have high crystalline perfection, high quantum yield of radiative recombination and high size homogeneity. Main advantages and operating properties of quantum dot lasers fabricated by self-organized growth are briefly introduced.
基金financially supported by the ERC Starting Grant No.715770(QD-NOMS)the National Natural Science Foundation of China(No.61728501)
文摘Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs.High photon quality and indistinguishability of photons from different sources are critical for quantum information applications.The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g.temperature,electric,magnetic or strain fields.In this review,we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots.Using piezoelectric crystals like PMN-PT,the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly.Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure.Emission from light hole exciton can be tuned,and quantum dot containing nanostructure such as nanowires have been piezo-integrated.To ensure the indistinguishability of photons from distant emitters,the wavelength drift caused by piezo creep can be compensated by frequency feedback,which is verified by two-photon interference with photons from two stabilized sources.Therefore,strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.
基金Project supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405)the National Natural Science Foundation of China (Grant No 60644004)the High School Innovation and Introducing Talent Project (Grant No B07005)
文摘This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/AlN quantum dot.
基金National Natural Science Foundation of China(No.11874067)。
文摘We reported a low-cost and easy-to-make method to effectively generate quantum dot(QD)states in 2D hBN films for quantum emissions at room temperature by utilizing silica nanospheres,in comparison with the sophisticated nanofabrication method reported in previous studies.The QDs created in 2D hBN films using silica nanospheres exhibit pronounced photon emissions with a good photo-stability in air,a narrow distribution of the emission peaks within the range of 580-620 nm,and a directional emission pattern,behaving as a single electric dipole.Our work develops the method of controllable fabrication of quantum emitters in 2D materials by using nano materials and structures.
基金Project supported by the National Basic Research Program of China (Grant No 2003CB314901)the National Natural Science Foundation of China (Grant No 60644004)the High School Innovation and Introducing Talent Project of China (B07005)
文摘Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.
文摘Pulsed laser ablation epitaxial Strancky-Krastanow growth of self-organized complex oxide Ce:BaTiO3 quantum dots on MgO(100) substrates is demonstrated. Atomic force microscopy and X-ray diffraction are used to observe the structure and the growth process of the self-organized complex oxide quantum dots. The average dimension, height, and the density of self-organized complex oxide Ce:BaTiO3 quantum dots are given. The nonlinear refractive indexes of the wetting layer and the self-organized ordered quantum dots are determined by the single beam Z-scan method. The mechanisms of the nonlinear effect enhancement for these low-dimensional structure are discussed.
基金supported by the National Natural Science Foundation of China(No10964006)the Research Funds for the Science and Technology Innovation Team of Inner Mongolia Agricultural University(NoNDPYTD2010-7)
文摘Within the effective-mass approximation,a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_（1-x）N cylindrical quantum dot.The electron couples with both branches of longitudinal optical-like（LO-like）and transverse optical-like（TO-like）phonons and the built-in electric field are taken into account.The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states.Furthermore,the contribution of LO-like phonons to the binding energy is dominant,and the anisotropic angle and Al content influence on the binding energy are small.
基金Project supported by the National Natural Science Foundation of China(No.11102100)the Technology Projects of the Education Bureau of Fujian Province,China(No.JK2009038)
文摘Within the effective-mass and finite-height potential barrier approximation,a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate in wurtzite cylindrical GaN/Al_xGa_（1-x）N quantum dots（QDs） is performed using a variational approach.Numerical results show that the emission wavelength with strain effect is higher than that without strain effect when the QD height is large（〉 3.8 nm）,but the status is opposite when the QD height is small（〈 3.8 nm）.The height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to the strain effect.The emission wavelength decreases linearly and the electron-hole recombination rate increases almost linearly with applied hydrostatic pressure.The hydrostatic pressure has a remarkable influence on the emission wavelength for large QDs,and has a significant influence on the electron-hole recombination rate for small QDs.Furthermore,the present numerical outcomes are in qualitative agreement with previous experimental findings under zero pressure.
文摘Taking into account anisotropy, nonparabolicity of the conduction band, and geometrical confinement, we discuss the heavy-hole excitonic states in a strained GaxIn1-xAs/GaAs quantum dot for various Ga alloy contents. The strained quantum dot is considered as a spherical InAs dot surrounded by a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and Ga ion content is numerically measured. Interband optical energy with and without the parabolic effect is computed using structural confinement. The interband matrix element for different Ga concentrations is also calculated. The oscillator strength of interband transitions on the dot radius is studied at different Ga concentrations in the GaxIn1-xAs/GaAs quantum dot. Heavy-hole excitonic absorption spectra are recorded for various Ga alloy contents in the GaxIn1-xAs/GaAs quantum dot. Results show that oscillator strength diminishes when dot size decreases because of the dominance of the quantum size effect. Furthermore, exchange enhancement and exchange sDlitting increase as exciton confinement inereases.
