期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Growth of high material quality InAs/GaSb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy
1
作者 Fang-Qi Lin Nong Li +10 位作者 Wen-Guang Zhou Jun-Kai Jiang Fa-Ran Chang Yong Li Su-Ning Cui Wei-Qiang Chen Dong-Wei Jiang Hong-Yue Hao Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期624-627,共4页
By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray d... By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector. 展开更多
关键词 type-Ⅱsuperlattice INAS/GASB LONG-WAVELENGTH strain-balanced
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部