A one-dimensional equivalent linear method （EQL） is widely used in estimating seismic ground response. For this method, the shear modulus and damping ratio of inelastic soil are supposed to be frequency independent....A one-dimensional equivalent linear method （EQL） is widely used in estimating seismic ground response. For this method, the shear modulus and damping ratio of inelastic soil are supposed to be frequency independent. However, historical earthquake records and laboratory test results indicate that nonlinear soil behavior is frequency- dependent. Several frequency-dependent equivalent linear methods （FDEQL） related to the Fourier amplitude of shear strain time history have been developed to take into account the frequency-dependent soil behavior. Furthermore, the shear strain threshold plays an important role in soil behavior. For shear strains below the elastic shear strain threshold, soil behaves essentially as a linear elastic mate- rial. To consider the effect of elastic-shear-strain-threshold- and frequency-dependent soil behavior on wave propaga- tion, the shear-strain-threshold- and frequency-dependent equivalent linear method （TFDEQL） is proposed. A series of analyses is implemented for EQL, FDEQL, and TFDEQL methods. Results show that elastic-shear-strain-threshold- and frequency-dependent soil behavior plays a great influence on the computed site response, especially for the high- frequency band. Also, the effect of elastic-strain-threshold- and frequency-dependent soil behavior on the site response is analyzed from relatively weak to strong input motion, and results show that the effect is more pronounced as input motion goes from weak to strong.展开更多
By using GDS dynamic hollow cylinder torsional apparatus, a series of cyclic torsional triaxial tests under complex initial consolidation condition are performed on Nanjing saturated fine sand. The effects of the init...By using GDS dynamic hollow cylinder torsional apparatus, a series of cyclic torsional triaxial tests under complex initial consolidation condition are performed on Nanjing saturated fine sand. The effects of the initial principal stress direction αo, the initial ratio of deviatoric stress η0, the initial average effective principal stress Po and the initial intermediate principal stress parameter b0 on the threshold shear strain γt of Nanjing saturated fine sand are then systematically investigated. The results show that γt increases as η0,p0 and b0 increase respectively, while the other three parameters remain constant. ao has a great influence on γt, which is reduced when ao increases from 0° to 45°and increased when α0 increases from 45° to 90°. The effect of α0 on γt, plays a leading role and the effect of η0 will weaken when ao is approximately 45°.展开更多
The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flat...The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.展开更多
The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface...The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson＇s equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate （SM-DG） MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.展开更多
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor ...Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.展开更多
Large-strain deformations introduce several confounding factors that affect the application of the Mechanical Threshold Stress model. These include the decrease with the increasing stress of the normalized activation ...Large-strain deformations introduce several confounding factors that affect the application of the Mechanical Threshold Stress model. These include the decrease with the increasing stress of the normalized activation energy characterizing deformation kinetics, the tendency toward Stage IV hardening at high strains, and the influence of crystallographic texture. Minor additions to the Mechanical Threshold Stress model are introduced to account for variations of the activation energy and the addition of Stage IV hardening. Crystallographic texture cannot be modeled using an isotropic formulation, but some common trends when analyzing predominantly shear deformation followed by uniaxial deformation are described. Comparisons of model predictions with measurements in copper processed using Equal Channel Angular Pressing are described.展开更多
Accurate prediction of stress-strain behavior of metals as a function of arbitrary temperature and strain rate paths has remained a challenge. The Mechanical Threshold Stress constitutive model is one formalism that h...Accurate prediction of stress-strain behavior of metals as a function of arbitrary temperature and strain rate paths has remained a challenge. The Mechanical Threshold Stress constitutive model is one formalism that has emerged following several decades of research. Vast experience has accumulated with the application of the Mechanical Threshold Stress model over a wide variety of pure metals and alloys. Out of this has arisen common trends across metal systems. The magnitude of activation energies presents one example of this, where these variables consistently increase in magnitude as the obstacle to dislocation motion transitions from short range to long range. Trends in strain hardening are also observed. In Face-Centered Cubic metals the magnitude of strain hardening scales with the stacking fault energy;trends in Body-Centered Cubic metals are less clear. Model parameters derived for over twenty metals and alloys are tabulated. Common trends should guide future application of the MTS model and further model development.展开更多
文中系统分析了GB/T 20801—2020(简称国标)、ASME B31.3—2024(简称美标)和BS EN 13480—2017(简称欧标)3个体系下的压力管道标准的蠕变损伤评估方法。从高温管道应力校核和累积损伤安全评估两方面,结合案例对比分析,给出了高温管道蠕...文中系统分析了GB/T 20801—2020(简称国标)、ASME B31.3—2024(简称美标)和BS EN 13480—2017(简称欧标)3个体系下的压力管道标准的蠕变损伤评估方法。从高温管道应力校核和累积损伤安全评估两方面,结合案例对比分析,给出了高温管道蠕变损伤评估推荐流程。设计阶段高温管道应力校核,推荐采用美标通过最小蠕变率和蠕变断裂强度降低许用应力,控制蠕变变形,增加欧标蠕变工况应力校核方法以避免热棘轮失效,更加全面地考核蠕变损伤模式;服役阶段累积损伤安全评估,推荐采用美标给出的Larson-Miller方法,考虑运行条件的温度和压力波动,评估结果更加安全。展开更多
基金supported by the Science for Earthquake Resilience of China Earthquake Administration(Grant No.XH14060)the National Natural Science Foundation of China(Grant No.51478135)
文摘A one-dimensional equivalent linear method （EQL） is widely used in estimating seismic ground response. For this method, the shear modulus and damping ratio of inelastic soil are supposed to be frequency independent. However, historical earthquake records and laboratory test results indicate that nonlinear soil behavior is frequency- dependent. Several frequency-dependent equivalent linear methods （FDEQL） related to the Fourier amplitude of shear strain time history have been developed to take into account the frequency-dependent soil behavior. Furthermore, the shear strain threshold plays an important role in soil behavior. For shear strains below the elastic shear strain threshold, soil behaves essentially as a linear elastic mate- rial. To consider the effect of elastic-shear-strain-threshold- and frequency-dependent soil behavior on wave propaga- tion, the shear-strain-threshold- and frequency-dependent equivalent linear method （TFDEQL） is proposed. A series of analyses is implemented for EQL, FDEQL, and TFDEQL methods. Results show that elastic-shear-strain-threshold- and frequency-dependent soil behavior plays a great influence on the computed site response, especially for the high- frequency band. Also, the effect of elastic-strain-threshold- and frequency-dependent soil behavior on the site response is analyzed from relatively weak to strong input motion, and results show that the effect is more pronounced as input motion goes from weak to strong.
基金supported by the Key Research Project of National Natural Science Foundation of China under grant No. 90715018the Special Fund for the Commonweal Industry of China under grant No. 200808022the Key Basic Research Program of Natural Science of University in Jiangsu Province under grant No. 08KJA560001
文摘By using GDS dynamic hollow cylinder torsional apparatus, a series of cyclic torsional triaxial tests under complex initial consolidation condition are performed on Nanjing saturated fine sand. The effects of the initial principal stress direction αo, the initial ratio of deviatoric stress η0, the initial average effective principal stress Po and the initial intermediate principal stress parameter b0 on the threshold shear strain γt of Nanjing saturated fine sand are then systematically investigated. The results show that γt increases as η0,p0 and b0 increase respectively, while the other three parameters remain constant. ao has a great influence on γt, which is reduced when ao increases from 0° to 45°and increased when α0 increases from 45° to 90°. The effect of α0 on γt, plays a leading role and the effect of η0 will weaken when ao is approximately 45°.
基金Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801)the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008)
文摘The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376099,11235008,and 61205003)
文摘The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson＇s equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate （SM-DG） MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.
基金Project supported by the National Defence Pre-research Foundation of China (Grant Nos. 51308040203,9140A08060407DZ0103,and 6139801)
文摘Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.
文摘Large-strain deformations introduce several confounding factors that affect the application of the Mechanical Threshold Stress model. These include the decrease with the increasing stress of the normalized activation energy characterizing deformation kinetics, the tendency toward Stage IV hardening at high strains, and the influence of crystallographic texture. Minor additions to the Mechanical Threshold Stress model are introduced to account for variations of the activation energy and the addition of Stage IV hardening. Crystallographic texture cannot be modeled using an isotropic formulation, but some common trends when analyzing predominantly shear deformation followed by uniaxial deformation are described. Comparisons of model predictions with measurements in copper processed using Equal Channel Angular Pressing are described.
文摘Accurate prediction of stress-strain behavior of metals as a function of arbitrary temperature and strain rate paths has remained a challenge. The Mechanical Threshold Stress constitutive model is one formalism that has emerged following several decades of research. Vast experience has accumulated with the application of the Mechanical Threshold Stress model over a wide variety of pure metals and alloys. Out of this has arisen common trends across metal systems. The magnitude of activation energies presents one example of this, where these variables consistently increase in magnitude as the obstacle to dislocation motion transitions from short range to long range. Trends in strain hardening are also observed. In Face-Centered Cubic metals the magnitude of strain hardening scales with the stacking fault energy;trends in Body-Centered Cubic metals are less clear. Model parameters derived for over twenty metals and alloys are tabulated. Common trends should guide future application of the MTS model and further model development.
文摘文中系统分析了GB/T 20801—2020(简称国标)、ASME B31.3—2024(简称美标)和BS EN 13480—2017(简称欧标)3个体系下的压力管道标准的蠕变损伤评估方法。从高温管道应力校核和累积损伤安全评估两方面,结合案例对比分析,给出了高温管道蠕变损伤评估推荐流程。设计阶段高温管道应力校核,推荐采用美标通过最小蠕变率和蠕变断裂强度降低许用应力,控制蠕变变形,增加欧标蠕变工况应力校核方法以避免热棘轮失效,更加全面地考核蠕变损伤模式;服役阶段累积损伤安全评估,推荐采用美标给出的Larson-Miller方法,考虑运行条件的温度和压力波动,评估结果更加安全。
