Gallium oxide(Ga_(2)O_(3))is an ultra-wide bandgap semiconductor with excellent potential for high-power and ultraviolet optoelectronic device applications.High-performance Ga_(2)O_(3)-based high-power devices rely he...Gallium oxide(Ga_(2)O_(3))is an ultra-wide bandgap semiconductor with excellent potential for high-power and ultraviolet optoelectronic device applications.High-performance Ga_(2)O_(3)-based high-power devices rely heavily on precise processing,especially in wafer dicing.Laser stealth dicing(LSD)is an innova-tive laser technology that utilizes a focused laser to create subsurface modifications in the wafer without surface damage.LSD has broad application prospects in the field of semiconductor precision processing.In this work,the idea of achieving high-quality dicing ofβ-Ga_(2)O_(3) wafers via LSD was proposed.A com-bination of atomistic simulations and experiments was used to understand the underlying mechanism of LSD ofβ-Ga_(2)O_(3) wafers.On the one hand,the laser loading and fracture process ofβ-Ga_(2)O_(3) wafers were simulated using molecular dynamics(MD)methods as well as a machine learning potential.The effects of single-pulse energy on LSD were analyzed through the lattice residual pressure,the final total energy of the system,the internal atomic strain,and the maximum stress value during uniaxial tension.On the other hand,based on the MD simulations,LSD was successfully performed onβ-Ga_(2)O_(3) wafers along three main crystal planes in the laboratory,resulting in good surface quality.This work not only provides profound optimization strategies for the LSD process ofβ-Ga_(2)O_(3),establishing the foundation for high-quality dicing ofβ-Ga_(2)O_(3) wafers,but also verifies the accuracy of MD simulations in predict-ing trends related to the LSD,offering a potential approach for high-quality dicing of other materials in future research.展开更多
基金financially supported by the National Nat-ural Science Foundation of China(Nos.92473102,62004141,and 52202045)the Knowledge Innovation Program of Wuhan-Shuguang(Nos.2023010201020243,and 2023010201020255)+4 种基金the Major Program(JD)of Hubei Province(No.2023BAA009)the Shenzhen Science and Technology Program(No.JCYJ20240813175906008)the Fundamental Research Funds for the Central Universities(Nos.2042023kf0112,and 2042022kf1028)the Open Fund of Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration(Wuhan University)(Nos.EMPI2024014,EMPI2024021,and EMPI2023027)the China Scholarship Council(No.202206275005).
文摘Gallium oxide(Ga_(2)O_(3))is an ultra-wide bandgap semiconductor with excellent potential for high-power and ultraviolet optoelectronic device applications.High-performance Ga_(2)O_(3)-based high-power devices rely heavily on precise processing,especially in wafer dicing.Laser stealth dicing(LSD)is an innova-tive laser technology that utilizes a focused laser to create subsurface modifications in the wafer without surface damage.LSD has broad application prospects in the field of semiconductor precision processing.In this work,the idea of achieving high-quality dicing ofβ-Ga_(2)O_(3) wafers via LSD was proposed.A com-bination of atomistic simulations and experiments was used to understand the underlying mechanism of LSD ofβ-Ga_(2)O_(3) wafers.On the one hand,the laser loading and fracture process ofβ-Ga_(2)O_(3) wafers were simulated using molecular dynamics(MD)methods as well as a machine learning potential.The effects of single-pulse energy on LSD were analyzed through the lattice residual pressure,the final total energy of the system,the internal atomic strain,and the maximum stress value during uniaxial tension.On the other hand,based on the MD simulations,LSD was successfully performed onβ-Ga_(2)O_(3) wafers along three main crystal planes in the laboratory,resulting in good surface quality.This work not only provides profound optimization strategies for the LSD process ofβ-Ga_(2)O_(3),establishing the foundation for high-quality dicing ofβ-Ga_(2)O_(3) wafers,but also verifies the accuracy of MD simulations in predict-ing trends related to the LSD,offering a potential approach for high-quality dicing of other materials in future research.
