Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solut...Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solutions of the extended displacement and traction for a homogeneous piezoelectric quasicrystal （PQC）plate are derived from an eigensystem. The general solutions for multilayered PQC plates are then obtained using the propagator matrix method when mechanical and electrical loads are applied on the top surface of the plate. Numerical examples for several sandwich plates made up of PQC, PE, and QC materials are provided to show the effect of stacking sequence on phonon, phason, and electric fields under mechanical and electrical loads, which is useful in designing new composites for engineering structures.展开更多
The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out...The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out under differentremelting current, and transverse static magnetic fields （TSMF） of 85 mT, 130 mT and 160 mT were superimposed.Statistical work was performed to obtain the quantitative data of the droplets. The ASPEX Explorer was utilized toinvestigate the inclusions evolution of GCr15 ingots. The number of the droplets was 31 in 20 s during the traditional ESRprocess and reached 50 and 51 under the MC-ESR process with the TSMF of 85 mT and 130 mT, respectively. Whencompared the traditional ESR process with the MC-ESR process, the inclusions amount reduced 67%.展开更多
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flu...Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11502123 and11262012)the Natural Science Foundation of Inner Mongolia Autonomous Region of China(No.2015JQ01)
文摘Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solutions of the extended displacement and traction for a homogeneous piezoelectric quasicrystal （PQC）plate are derived from an eigensystem. The general solutions for multilayered PQC plates are then obtained using the propagator matrix method when mechanical and electrical loads are applied on the top surface of the plate. Numerical examples for several sandwich plates made up of PQC, PE, and QC materials are provided to show the effect of stacking sequence on phonon, phason, and electric fields under mechanical and electrical loads, which is useful in designing new composites for engineering structures.
基金financial support of the National Key Research and Development Program of China(No.2016YFB0300401)the National Natural Science Foundation of China(Nos.U1732276 and 51704193)+2 种基金the General Financial Grant from the China Postdoctoral Science Foundation(No.2017M621431)the Science and Technology Commission of Shanghai Municipality(No.15520711000)Independent Research and Development Project of State Key of Advanced Special Steel,Shanghai University(SKLASS2015-Z021,SELF-2014-02)
文摘The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out under differentremelting current, and transverse static magnetic fields （TSMF） of 85 mT, 130 mT and 160 mT were superimposed.Statistical work was performed to obtain the quantitative data of the droplets. The ASPEX Explorer was utilized toinvestigate the inclusions evolution of GCr15 ingots. The number of the droplets was 31 in 20 s during the traditional ESRprocess and reached 50 and 51 under the MC-ESR process with the TSMF of 85 mT and 130 mT, respectively. Whencompared the traditional ESR process with the MC-ESR process, the inclusions amount reduced 67%.
基金supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201306)
文摘Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
