In organic photovoltaics(OPVs),theπ-orbital D18-Cl coherent stack ofπ-conjugated polymers in the active layer exerts a profound influence on exciton dissociation and charge transport.Nevertheless,the structural flex...In organic photovoltaics(OPVs),theπ-orbital D18-Cl coherent stack ofπ-conjugated polymers in the active layer exerts a profound influence on exciton dissociation and charge transport.Nevertheless,the structural flexibility intrinsic ofπ-conjugated polymers fundamentally restricts orderedπ-orbital coherent stack,thereby establishing persistent performance limitations in OPVs.Here,we demonstrate a universal crystalinduced polymericπ-orbital coherent stack reinforcement strategy by incorporating nano-monolayer nickel phosphorus trisulfide(NiPS_(3))crystal as a multifunctional additive,to modulates tighterπ–πstacking and extended crystallite coherence length.These structural improvements synergistically extend exciton lifetime,suppress carrier recombination,and optimize charge transport.Consequently,OPVs based on D18-Cl:L8-BO system achieves an impressive power conversion efficiency(PCE)of 20.83%with concurrent improvements in short-circuit current density and fill factor.The universality of this approach is further confirmed in PM6:L8-BO(PCE boosts from 17.41%±0.21%to 18.08%±0.11%)and D18:L8-BO(PCE improves from 19.20%±0.27%to 20.19%±0.20%)systems,where nano-monolayer NiPS_(3) crystal universally mediates the formation of tightlyπ-orbital coherent stack ofπ-conjugated polymers with enhanced crystallite coherence length.This work establishes nano-monolayer NiPS_(3) crystal as powerful tools for modulatesπ-orbital coherent stack of conjugated polymers,offering a materials-agnostic pathway toward high-efficiency OPVs.展开更多
High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate...High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.展开更多
The first-principles method based on the projector augmented wave method within the generalized gradient approximation was employed to calculate the superlattice intrinsic stacking fault（SISF） and complex stacking f...The first-principles method based on the projector augmented wave method within the generalized gradient approximation was employed to calculate the superlattice intrinsic stacking fault（SISF） and complex stacking fault（CSF） energies of the binary Ni3Al alloys with different Al contents and the ternary Ni3Al intermetallic alloys with addition of alloying elements,such as Pd,Pt,Ti,Mo,Ta,W and Re.The results show that the energies of SISF and CSF increase significantly with increase of Al contents in Ni3Al.Addition of Pd and Pt occupying the Ni sublattices does not change the SISF and CSF energies of Ni3Al markedly in comparison with the Ni-23.75Al alloy.While addition of alloying elements,such as Ti,Mo,Ta,W and Re,occupying the Al sublattices dramatically increases the SISF and CSF energies of Ni3Al.The results suggest that the energies of SISF and CSF are dependent both on the Al contents and on the site occupancy of the ternary alloying element in Ni3Al intermetallic alloys.展开更多
In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is bu...In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is built with the general consideration of both the test time for automatic test equipment(ATE)and manufacturing failure factors.An algorithm for testing cost and testing order optimization is proposed,and the minimum testing cost and optimized stacking order can be carried out by taking testing bandwidth and testing power as constraints.To prove the influence of the optimal stacking order on testing costs,two baselines stacked in sequential either in pyramid type or in inverted pyramid type are compared.Based on the benchmarks from ITC 02,experimental results show that for a 5-layer 3D IC,under different constraints,the optimal stacking order can reduce the test costs on average by 13%and 62%,respectively,compared to the pyramid type and inverted pyramid type.Furthermore,with the increase of the stack size,the test costs of the optimized stack order can be decreased.展开更多
Using first principles calculations combined with the quasiharmonic approach, we study the effects of temperature on the elastic constants, generalized stacking fault energies, and generalized planar fault energies of...Using first principles calculations combined with the quasiharmonic approach, we study the effects of temperature on the elastic constants, generalized stacking fault energies, and generalized planar fault energies of Ni3Al. The antiphase boundary energies, complex stacking fault energies, superlattice intrinsic stacking fault energies, and twinning energies decrease slightly with temperature. Temperature dependent anomalous yield stress of Ni3Al is predicted by the energybased criterion based on elastic anisotropy and antiphase boundary energies. It is found that p increases with temperature and this can give a more accurate description of the anomalous yield stress in Ni3Al. Furthermore, the predicted twinnablity of Ni3Al is also decreasing with temperature.展开更多
An unusual F_(3)basal stacking fault resulting from twin-dislocation interaction in magnesium is observed in molecular dynamics simulation.The F_(3)fault is produced in the twin lattice from the interaction between a ...An unusual F_(3)basal stacking fault resulting from twin-dislocation interaction in magnesium is observed in molecular dynamics simulation.The F_(3)fault is produced in the twin lattice from the interaction between a migrating(1012)twin boundary and a partial dislocation of either a prismatic<c>edge,or a prismatic<c+a>mixed dislocation in the matrix.The condition is that the partial dislocation needs to have a negative sign and lie on a plane intersecting a compression site of the twin boundary.The F_(3)fault can also be generated when a positive basal<a>mixed dislocation in the twin lattice,with slip plane intersecting a compression site of the twin boundary,interacts with a basal-prismatic twinning disconnection.The F_(3)fault comprises two I_(1) faults that have the same character but are separated by two basal layers.It has one end connected to the twin boundary,and the other end bounded by a lattice defect with a Burgers vector identical to that of a 30°Shockley partial dislocation.The formation frequency of the F_(3)fault is higher at a lower shear stress(below∼400 MPa)and/or a lower temperature(100 K and 200 K).The F_(3)fault can decompose into a glissile 30°Shockley and a T_(2) fault at a temperature above∼400 K.The relationships between the F_(3)fault and other types of basal stacking faults such as I_(2),T_(2) or paired I_(1) faults that are separated by multiple basal layers are discussed.展开更多
As a two-dimensional carbon based semiconductor,C_(3)N acts as a promising material in many application areas.However,the basic physical properties such as Raman spectrum properties of C_(3)N is still not clear.In thi...As a two-dimensional carbon based semiconductor,C_(3)N acts as a promising material in many application areas.However,the basic physical properties such as Raman spectrum properties of C_(3)N is still not clear.In this paper,we clarify the Raman spectrum properties of multilayer C_(3)N.Moreover,the stacking driven Raman spectra change of multilayer C_(3)N is also discussed.展开更多
Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold...Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.展开更多
This work synthesized a series of Ni/CeO_(2)/Al_(2)O_(3) catalysts with varying CeO_(2) doping amounts to enhance low-temperature CO_(2) methanation.The introduction of CeO_(2) weakens the interaction between Ni and A...This work synthesized a series of Ni/CeO_(2)/Al_(2)O_(3) catalysts with varying CeO_(2) doping amounts to enhance low-temperature CO_(2) methanation.The introduction of CeO_(2) weakens the interaction between Ni and Al_(2)O_(3),leading to the formation of Ni-CeO_(2) active sites.This results in a high dispersion of Ni and CeO_(2),improved catalyst reducibility,increased number of active sites,and enhanced the CO_(2) methanation.This work further investigated the impact of WHSV and catalyst stacking configuration to enhance the reaction.When the catalyst is stacked into three segments with a temperature gradient of 330℃,300℃,and 250℃under WHSV=9000 ml·h^(-1)·g^(-1),the CO_(2) conversion significantly increases to 95%,which is remarkably close to the thermodynamic equilibrium(96%).展开更多
The increasingly complex and interconnected train control information network is vulnerable to a variety of malicious traffic attacks,and the existing malicious traffic detection methods mainly rely on machine learnin...The increasingly complex and interconnected train control information network is vulnerable to a variety of malicious traffic attacks,and the existing malicious traffic detection methods mainly rely on machine learning,such as poor robustness,weak generalization,and a lack of ability to learn common features.Therefore,this paper proposes a malicious traffic identification method based on stacked sparse denoising autoencoders combined with a regularized extreme learning machine through particle swarm optimization.Firstly,the simulation environment of the Chinese train control system-3,was constructed for data acquisition.Then Pearson coefficient and other methods are used for pre-processing,then a stacked sparse denoising autoencoder is used to achieve nonlinear dimensionality reduction of features,and finally regularization extreme learning machine optimized by particle swarm optimization is used to achieve classification.Experimental data show that the proposed method has good training performance,with an average accuracy of 97.57%and a false negative rate of 2.43%,which is better than other alternative methods.In addition,ablation experiments were performed to evaluate the contribution of each component,and the results showed that the combination of methods was superior to individual methods.To further evaluate the generalization ability of the model in different scenarios,publicly available data sets of industrial control system networks were used.The results show that the model has robust detection capability in various types of network attacks.展开更多
基金the National Natural Science Foundation of China(NSFC,No.62404094)the Natural Science Foundation of Hunan Province(No.2023JJ40532)+1 种基金the Fund of University of South China(Nos.210XQD018 and 5524GC017)the Fund of Hengyang Science and Technology Bureau(No.202121014588).
文摘In organic photovoltaics(OPVs),theπ-orbital D18-Cl coherent stack ofπ-conjugated polymers in the active layer exerts a profound influence on exciton dissociation and charge transport.Nevertheless,the structural flexibility intrinsic ofπ-conjugated polymers fundamentally restricts orderedπ-orbital coherent stack,thereby establishing persistent performance limitations in OPVs.Here,we demonstrate a universal crystalinduced polymericπ-orbital coherent stack reinforcement strategy by incorporating nano-monolayer nickel phosphorus trisulfide(NiPS_(3))crystal as a multifunctional additive,to modulates tighterπ–πstacking and extended crystallite coherence length.These structural improvements synergistically extend exciton lifetime,suppress carrier recombination,and optimize charge transport.Consequently,OPVs based on D18-Cl:L8-BO system achieves an impressive power conversion efficiency(PCE)of 20.83%with concurrent improvements in short-circuit current density and fill factor.The universality of this approach is further confirmed in PM6:L8-BO(PCE boosts from 17.41%±0.21%to 18.08%±0.11%)and D18:L8-BO(PCE improves from 19.20%±0.27%to 20.19%±0.20%)systems,where nano-monolayer NiPS_(3) crystal universally mediates the formation of tightlyπ-orbital coherent stack ofπ-conjugated polymers with enhanced crystallite coherence length.This work establishes nano-monolayer NiPS_(3) crystal as powerful tools for modulatesπ-orbital coherent stack of conjugated polymers,offering a materials-agnostic pathway toward high-efficiency OPVs.
基金Project supported by the Key Area Research and Development Program of Guangdong Province of China(Grant No.2021B0101300005)the National Key Research and Development Program of China(Grant No.2021YFB3401603)。
文摘High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.
基金Project(50871065) supported by the National Natural Science Foundation of ChinaProjects(08DJ1400402,09JC1407200,10DZ2290904) supported by the Science and Technology Committee of Shanghai Municipality,China
文摘The first-principles method based on the projector augmented wave method within the generalized gradient approximation was employed to calculate the superlattice intrinsic stacking fault（SISF） and complex stacking fault（CSF） energies of the binary Ni3Al alloys with different Al contents and the ternary Ni3Al intermetallic alloys with addition of alloying elements,such as Pd,Pt,Ti,Mo,Ta,W and Re.The results show that the energies of SISF and CSF increase significantly with increase of Al contents in Ni3Al.Addition of Pd and Pt occupying the Ni sublattices does not change the SISF and CSF energies of Ni3Al markedly in comparison with the Ni-23.75Al alloy.While addition of alloying elements,such as Ti,Mo,Ta,W and Re,occupying the Al sublattices dramatically increases the SISF and CSF energies of Ni3Al.The results suggest that the energies of SISF and CSF are dependent both on the Al contents and on the site occupancy of the ternary alloying element in Ni3Al intermetallic alloys.
基金The National Natural Science Foundation of China(No.61674048,61574052,61474036,61371025)the Project of Anhui Institute of Economics and Management(No.YJKT1417T01)
文摘In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is built with the general consideration of both the test time for automatic test equipment(ATE)and manufacturing failure factors.An algorithm for testing cost and testing order optimization is proposed,and the minimum testing cost and optimized stacking order can be carried out by taking testing bandwidth and testing power as constraints.To prove the influence of the optimal stacking order on testing costs,two baselines stacked in sequential either in pyramid type or in inverted pyramid type are compared.Based on the benchmarks from ITC 02,experimental results show that for a 5-layer 3D IC,under different constraints,the optimal stacking order can reduce the test costs on average by 13%and 62%,respectively,compared to the pyramid type and inverted pyramid type.Furthermore,with the increase of the stack size,the test costs of the optimized stack order can be decreased.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11104361 and 11304403)the Fundamental Research Funds for the Central Universities,China(Grant Nos.CQDXWL2014003 and CDJZR14328801)
文摘Using first principles calculations combined with the quasiharmonic approach, we study the effects of temperature on the elastic constants, generalized stacking fault energies, and generalized planar fault energies of Ni3Al. The antiphase boundary energies, complex stacking fault energies, superlattice intrinsic stacking fault energies, and twinning energies decrease slightly with temperature. Temperature dependent anomalous yield stress of Ni3Al is predicted by the energybased criterion based on elastic anisotropy and antiphase boundary energies. It is found that p increases with temperature and this can give a more accurate description of the anomalous yield stress in Ni3Al. Furthermore, the predicted twinnablity of Ni3Al is also decreasing with temperature.
基金the support from the Australian Research Council (DP200102985)the Monash Graduate ScholarshipInternational Postgraduate Research Scholarship
文摘An unusual F_(3)basal stacking fault resulting from twin-dislocation interaction in magnesium is observed in molecular dynamics simulation.The F_(3)fault is produced in the twin lattice from the interaction between a migrating(1012)twin boundary and a partial dislocation of either a prismatic<c>edge,or a prismatic<c+a>mixed dislocation in the matrix.The condition is that the partial dislocation needs to have a negative sign and lie on a plane intersecting a compression site of the twin boundary.The F_(3)fault can also be generated when a positive basal<a>mixed dislocation in the twin lattice,with slip plane intersecting a compression site of the twin boundary,interacts with a basal-prismatic twinning disconnection.The F_(3)fault comprises two I_(1) faults that have the same character but are separated by two basal layers.It has one end connected to the twin boundary,and the other end bounded by a lattice defect with a Burgers vector identical to that of a 30°Shockley partial dislocation.The formation frequency of the F_(3)fault is higher at a lower shear stress(below∼400 MPa)and/or a lower temperature(100 K and 200 K).The F_(3)fault can decompose into a glissile 30°Shockley and a T_(2) fault at a temperature above∼400 K.The relationships between the F_(3)fault and other types of basal stacking faults such as I_(2),T_(2) or paired I_(1) faults that are separated by multiple basal layers are discussed.
基金supported by The National Natural Science Foundation of China (Nos. 11804353 and 11774368)Shanghai Science and Technology Committee (No. 18511110600)
文摘As a two-dimensional carbon based semiconductor,C_(3)N acts as a promising material in many application areas.However,the basic physical properties such as Raman spectrum properties of C_(3)N is still not clear.In this paper,we clarify the Raman spectrum properties of multilayer C_(3)N.Moreover,the stacking driven Raman spectra change of multilayer C_(3)N is also discussed.
基金Supported by the National Natural Science Foundation of China under Grant No 61306126
文摘Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
基金financial support of the National Natural Science Foundation of China(22178265)Tianjin Science and Technology Project(21JCYBJC00400)Open Project for Ningbo Key Laboratory of Green Petrochemical Carbon Emission Reduction Technology and Equipment(ZITJU2023-ZYDK001).
文摘This work synthesized a series of Ni/CeO_(2)/Al_(2)O_(3) catalysts with varying CeO_(2) doping amounts to enhance low-temperature CO_(2) methanation.The introduction of CeO_(2) weakens the interaction between Ni and Al_(2)O_(3),leading to the formation of Ni-CeO_(2) active sites.This results in a high dispersion of Ni and CeO_(2),improved catalyst reducibility,increased number of active sites,and enhanced the CO_(2) methanation.This work further investigated the impact of WHSV and catalyst stacking configuration to enhance the reaction.When the catalyst is stacked into three segments with a temperature gradient of 330℃,300℃,and 250℃under WHSV=9000 ml·h^(-1)·g^(-1),the CO_(2) conversion significantly increases to 95%,which is remarkably close to the thermodynamic equilibrium(96%).
文摘The increasingly complex and interconnected train control information network is vulnerable to a variety of malicious traffic attacks,and the existing malicious traffic detection methods mainly rely on machine learning,such as poor robustness,weak generalization,and a lack of ability to learn common features.Therefore,this paper proposes a malicious traffic identification method based on stacked sparse denoising autoencoders combined with a regularized extreme learning machine through particle swarm optimization.Firstly,the simulation environment of the Chinese train control system-3,was constructed for data acquisition.Then Pearson coefficient and other methods are used for pre-processing,then a stacked sparse denoising autoencoder is used to achieve nonlinear dimensionality reduction of features,and finally regularization extreme learning machine optimized by particle swarm optimization is used to achieve classification.Experimental data show that the proposed method has good training performance,with an average accuracy of 97.57%and a false negative rate of 2.43%,which is better than other alternative methods.In addition,ablation experiments were performed to evaluate the contribution of each component,and the results showed that the combination of methods was superior to individual methods.To further evaluate the generalization ability of the model in different scenarios,publicly available data sets of industrial control system networks were used.The results show that the model has robust detection capability in various types of network attacks.
