La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by...La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.展开更多
Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are inve...Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.展开更多
High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2...High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2.0 μm） without mi-crocracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influ-ence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan （θ-2θ,ω-scan,pole figure） and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density （Jc） strongly depended on the film thickness. Furthermore,the reasons for these thickness dependences were elucidated in detail.展开更多
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investiga...At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.展开更多
Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this wor...Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this work,the ultrathin barium titanate(BaTiO_(3),BTO)films are deposited directly on the fluorine-doped tin oxide glass(SnO_(2):F,FTO)substrates by radio frequency magnetron sputtering method at different temperatures.All BTO ultrathin films exhibit strong ferroelectric properties.Interestingly,BTO thin films deposited at room temperature(RT)also exhibit robust ferroelectricity.The polar domains are switched reversibly with a phase degree of~180°by piezoelectric force microscopy for the BTO thin films deposited at room temperature,attributing to the strain and ion migration.展开更多
With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO l...With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO layer is studied. The X-ray diffraction measurements demonstrate that crystal structure and crystallization quality of MgO layers are related to the type of target and concentration of oxygen in sputtering process. With the method sputtering Mg in an ambient flow of oxygen, not only the crystallization quality of a normal MgO layer with lattice constant of 0.421 nm is improved, but also a new MgO crystal with lattice constant of 0.812 nm is formed and the perpendicular magnetic anisotropy of CoFeB is enhanced. Also it is found that crystallization quality for both the normal MgO and new MgO is more improved with MgO target and same oxygen dose, which means that this new method is helpful to form a new structure of MgO annealed at 400 ℃ in vacuum. with lattice constant of 0.812 nm. All of the samples were展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174142 and 11304160he National Basic Research Program of China under Grant No 2012CB921504the Special Fund for Public Interest of China under Grant No201510068
文摘La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.
基金Supported by the National Natural Science Foundation of China under Grant No 11304160the Special Fund for Public Interest of China under Grant No 201510068,and the NUPTFC under Grant No NY215111
文摘Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.
文摘High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2.0 μm） without mi-crocracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influ-ence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan （θ-2θ,ω-scan,pole figure） and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density （Jc） strongly depended on the film thickness. Furthermore,the reasons for these thickness dependences were elucidated in detail.
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
文摘At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.
基金financially supported by the National Key Research and Development Program of China(No.2019YFB1503500)
文摘Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this work,the ultrathin barium titanate(BaTiO_(3),BTO)films are deposited directly on the fluorine-doped tin oxide glass(SnO_(2):F,FTO)substrates by radio frequency magnetron sputtering method at different temperatures.All BTO ultrathin films exhibit strong ferroelectric properties.Interestingly,BTO thin films deposited at room temperature(RT)also exhibit robust ferroelectricity.The polar domains are switched reversibly with a phase degree of~180°by piezoelectric force microscopy for the BTO thin films deposited at room temperature,attributing to the strain and ion migration.
基金Project supported by the National Defense Advance Research Foundation(No.9140A080040410DZ106)the Basic Research Program of Ministry of Education,China(No.JY10000925005)+2 种基金the Scientific Research Program Funded by Shaanxi Provincial Education Department(No.11JK0912)the Scientific Research Foundation of Xi’an University of Science and Technology(No.2010011)the Doctoral Research Startup Fund of Xi’an University of Science and Technology(No.2010QDJ029)
文摘With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO layer is studied. The X-ray diffraction measurements demonstrate that crystal structure and crystallization quality of MgO layers are related to the type of target and concentration of oxygen in sputtering process. With the method sputtering Mg in an ambient flow of oxygen, not only the crystallization quality of a normal MgO layer with lattice constant of 0.421 nm is improved, but also a new MgO crystal with lattice constant of 0.812 nm is formed and the perpendicular magnetic anisotropy of CoFeB is enhanced. Also it is found that crystallization quality for both the normal MgO and new MgO is more improved with MgO target and same oxygen dose, which means that this new method is helpful to form a new structure of MgO annealed at 400 ℃ in vacuum. with lattice constant of 0.812 nm. All of the samples were
