The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB las...The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.展开更多
High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickn...High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.展开更多
文摘The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.
文摘High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.
