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Advances in spin regulation of M-N-C single-atom catalysts and their applications in electrocatalysis
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作者 Jiayi Cui Xintao Yu +3 位作者 Xueyao Li Jianmin Yu Lishan Peng Zidong Wei 《Chinese Journal of Catalysis》 2025年第2期17-34,共18页
To enhance the efficiency of green energy harvesting and pollutant degradation,significant efforts are focused on identifying highly effective catalysts.Metal-nitrogen-carbon single-atom catalysts(M-N-C SACs)have emer... To enhance the efficiency of green energy harvesting and pollutant degradation,significant efforts are focused on identifying highly effective catalysts.Metal-nitrogen-carbon single-atom catalysts(M-N-C SACs)have emerged as pivotal in catalysis due to their unique geometric structures,electronic states,and catalytic capabilities.Notably,the incorporation of magnetic elements at the active centers of these single-atom catalysts has garnered attention for their role in efficient electrochemical conversions.The orientation of spin states critically influences the adsorption and formation of reactants and intermediates,making the precise control of spin alignment and magnetic moments essential for reducing energy barriers and overcoming spin-related limitations,thereby enhancing catalytic activity.Thus,understanding the catalytic role of spin and modulating spin density at M-N-C single-atom centers holds profound fundamental and technological significance.In this review,we elucidate the fundamental mechanisms governing spin states and its influence in electrocatalysis.We then discuss various strategies for adjusting the spin states of active centers in the M-N-C SACs and the associated characterization techniques.Finally,we outline challenges and future perspectives of spin regulation for high-performance catalysts.This review provides deep insights into the micro-mechanisms of catalytic phenomena and offers a roadmap for designing spin-regulated catalysts for advanced energy applications. 展开更多
关键词 ELECTROCATALYSIS M-N-C materials Single-atomcatalyst Electron spin effect Spin regulation
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Corrigendum to“Multi-functional photonic spin Hall effect sensor controlled by phase transition”
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作者 Jie Cheng Rui-Zhao Li +3 位作者 Cheng Cheng Ya-Lin Zhang Sheng-Li Liu Peng Dong 《Chinese Physics B》 2025年第9期671-671,共1页
Figure 6(a)in the paper[Chin.Phys.B 33074203(2024)]was incorrect due to editorial oversight.The correct figure is provided.This modification does not affect the result presented in the paper.
关键词 CORRIGENDUM photonic spin Hall effect multi-functional sensors phase transition sensing performance
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Linear Enhancement of Spin-Orbit Torque and Absence of Bulk Rashba Spin Splitting in Perpendicularly Magnetized[Pt/Co/W]_(n)Superlattices
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作者 Zhihao Yan Zhengxiao Li +2 位作者 Lujun Zhu Xin Lin Lijun Zhu 《Chinese Physics Letters》 2025年第9期126-131,共6页
The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-per... The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies. 展开更多
关键词 development magnetic heterostructures perpendicular magnetic anisotropy oxidized silicon substrates perpendicular magnetic anisotropy pma strong spin orbit torque spin Hall effect Pt Co W superlattice macrospin performance
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Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi_(2)Te_(3)
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作者 Jiayi Qiu Jinling Yu +4 位作者 Zhu Diao Yunfeng Lai Shuying Cheng Yonghai Chen Ke He 《Chinese Physics B》 2025年第11期205-212,共8页
The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect(PISHE)in topological insulator(TI)Bi_(2)Te_(3)films has been investigated.A significant enhancement of ... The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect(PISHE)in topological insulator(TI)Bi_(2)Te_(3)films has been investigated.A significant enhancement of the PISHE signal is observed in the 12-quintuple-layer(QL)Bi_(2)Te_(3)film compared with that of the 3-and 5-QL samples,whereas a minimal value of photoinduced momentum anisotropy is found in the 12-QL sample.The photoinduced momentum anisotropy and the PISHE in Bi_(2)Te_(3)films are more than three and two orders of magnitude larger than those in Bi2Se3 films grown on SrTiO_(3)substrates,respectively.The 3-QL sample exhibits a sinusoidal dependence of the PISHE current on the light spot position,while the 5-QL and 12-QL samples show aW-shaped dependence,which arises from the different angles between the coordinate axis x and the in-plane crystallographic axis of the Bi_(2)Te_(3)films.Our findings demonstrate the critical role of film thickness in modulating both the photoinduced momentum anisotropy and the PISHE current,thereby suggesting a thickness-engineering strategy for designing novel optoelectronic devices based on TIs. 展开更多
关键词 photoinduced inverse spin Hall effect photoinduced momentum anisotropy three-dimensional topological insulator Bi_(2)Te_(3) thickness dependence
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Effective spin dynamics of spin-orbit coupled matter-wave solitons in optical lattices
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作者 Kajal Krishna Dey Golam Ali Sekh 《Communications in Theoretical Physics》 2025年第1期172-178,共7页
We consider matter-wave solitons in spin-orbit coupled Bose-Einstein condensates embedded in an optical lattice and study the dynamics of the soliton within the framework of Gross-Pitaevskii equations.We express spin ... We consider matter-wave solitons in spin-orbit coupled Bose-Einstein condensates embedded in an optical lattice and study the dynamics of the soliton within the framework of Gross-Pitaevskii equations.We express spin components of the soliton pair in terms of nonlinear Bloch equations and investigate the effective spin dynamics.It is seen that the effective magnetic field that appears in the Bloch equation is affected by optical lattices,and thus the optical lattice influences the precessional frequency of the spin components.We make use of numerical approaches to investigate the dynamical behavior of density profiles and center-of-mass of the soliton pair in the presence of the optical lattice.It is shown that the spin density is periodically varying due to flipping of spinors between the two states.The amplitude of spin-flipping oscillation increases with lattice strength.We find that the system can also exhibit interesting nonlinear behavior for chosen values of parameters.We present a fixed point analysis to study the effects of optical lattices on the nonlinear dynamics of the spin components.It is seen that the optical lattice can act as a control parameter to change the dynamical behavior of the spin components from periodic to chaotic. 展开更多
关键词 spin-orbit coupled Bose-Einstein condensates effective spin dynamics regular and chaotic dynamics
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Spin effects on the relativistic strong EM wave modes in magnetized plasma
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作者 Qiang-Lin Hu Wen Hu Jin-Peng Xiao 《Communications in Theoretical Physics》 SCIE CAS CSCD 2023年第6期120-126,共7页
Based on the relativistic hydrodynamic model of EM wave-spin plasmas interaction,the spin effects on the relativistic strong EM modes in magnetized plasma are investigated.The dispersion relations of the EM wave propa... Based on the relativistic hydrodynamic model of EM wave-spin plasmas interaction,the spin effects on the relativistic strong EM modes in magnetized plasma are investigated.The dispersion relations of the EM wave propagating parallel and perpendicular to the external magnetic field are obtained.Results show that the strong EM wave modes are affected by the time component of four-spin as well as the increase of electron effective mass.Especially in the case of EM wave propagating parallel to the external magnetic field,the time component of fourspin amplifies the influence of spin effects on the low-frequency modes obviously. 展开更多
关键词 intense electromagnetic wave spin effect relativistic effect dispersion relation
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Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures
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作者 Majeed Ur Rehman A A Abid 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第12期481-490,共10页
The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number Cs for energy-bands of trilayer graphene having the essenc... The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number Cs for energy-bands of trilayer graphene having the essence of intrinsic spin-orbit coupling is analytically calculated. We find that for each valley and spin, Cs is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states, consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin-orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin-orbit (RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin-orbit coupling, while the other two layers have zero intrinsic spin-orbit coupling. Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped. 展开更多
关键词 trilayer graphene quantum spin Hall effect topological insulator quantum phase transition
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Hyperon Effects on the Spin Parameter of Rotating Neutron Stars
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作者 亓斌 张乃波 +1 位作者 王守宇 孙保元 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期31-34,共4页
Based on the equations of state from the relativistic mean field theory without and with the inclusion of strangeness-bearing hyperons, we study the dimensionless spin parameter j = cJ/(GM2) of uniformly rotat- ing ... Based on the equations of state from the relativistic mean field theory without and with the inclusion of strangeness-bearing hyperons, we study the dimensionless spin parameter j = cJ/(GM2) of uniformly rotat- ing neutron stars. It is shown that the maximum value of the spin parameter jmax of a neutron star rotating at the Keplerian frequency fK is .jmax - 0.7 when the star mass M 〉 0.SM⊙, which is sustained for various versions of equations of state without and with hyperons. The relationship between j and the scaled rotation frequency f /fK is found to be insensitive to the star mass or the adopted equation of state in the models without hyperons. However, the emergence of byperons in neutron stars will lead to an uncertainty of the spin parameter j, which in turn could generate a complexity in the theoretical study of the quasi-periodic oscillations observed in disk-accreting compact-star systems. 展开更多
关键词 Hyperon effects on the Spin Parameter of Rotating Neutron Stars RMF
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Multi-functional photonic spin Hall effect sensor controlled by phase transition 被引量:1
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作者 程杰 李瑞昭 +3 位作者 程骋 张亚林 刘胜利 董鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第7期336-342,共7页
Photonic spin Hall effect(PSHE), as a novel physical effect in light–matter interaction, provides an effective metrological method for characterizing the tiny variation in refractive index(RI). In this work, we propo... Photonic spin Hall effect(PSHE), as a novel physical effect in light–matter interaction, provides an effective metrological method for characterizing the tiny variation in refractive index(RI). In this work, we propose a multi-functional PSHE sensor based on VO_(2), a material that can reveal the phase transition behavior. By applying thermal control, the mutual transformation into different phase states of VO_(2) can be realized, which contributes to the flexible switching between multiple RI sensing tasks. When VO_(2) is insulating, the ultrasensitive detection of glucose concentrations in human blood is achieved. When VO_(2) is in a mixed phase, the structure can be designed to distinguish between the normal cells and cancer cells through no-label and real-time monitoring. When VO_(2) is metallic, the proposed PSHE sensor can act as an RI indicator for gas analytes. Compared with other multi-functional sensing devices with the complex structures, our design consists of only one analyte and two VO_(2) layers, which is very simple and elegant. Therefore, the proposed VO_(2)-based PSHE sensor has outstanding advantages such as small size, high sensitivity, no-label, and real-time detection, providing a new approach for investigating tunable multi-functional sensors. 展开更多
关键词 photonic spin Hall effect multi-functional sensors phase transition sensing performance
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First-Principles Study on Switching Performance and Spin Filtering Efficiency of Dimethyldihydropyrene/Cyclophanediene Single-Molecule Devices with Zigzag Graphene Nanoribbon Electrodes
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作者 Chang-Feng Zheng Yan-Qi Mu +1 位作者 Zong-Liang Li Guang-Ping Zhang 《Chinese Journal of Chemical Physics》 SCIE EI CAS CSCD 2024年第5期644-652,I0066-I0072,I0100,共17页
Moleculardeviceswith highswitchingperformance and/or the perfect spin filtering effect have always been the pursuit with the development of molecular electronics.Hereb,yusingthe 2001.0V nonequilibrium.Green's func... Moleculardeviceswith highswitchingperformance and/or the perfect spin filtering effect have always been the pursuit with the development of molecular electronics.Hereb,yusingthe 2001.0V nonequilibrium.Green's function method in combination with the density functionaltheory,the switching performance and spin filtering properties of dimethyldihydropyrene(DHP)/cyclophanediene(CPD)photoswitchable molecule connected by carbon atomic chains(CACs)to two zigzag graphene nanoribbon electrodes have been theoretically investigated.The results show that DHP is more conductive than CPD and therefore an evident switching effect is demonstrated,and the switching ratio(RON/OFF)can reach 4.5×103.It is further revealed that the RoON/OF of DHP/CPD closely depends on the length of CACs.More specifically,the RoN/OFF values of DHP/CPD with odd-numbered CACs are larger than those with even-numbered CACs.More interestingly,a high or even perfect spin filtering effect can be obtained in these investigated DHP/CPD single-molecule devices.Our study is helpful for future design of single-molecule switches and spin filters and provides a way to optimize their performance by means of varying the length of bridging CACs. 展开更多
关键词 Single-molecule switch Spin filtering effect Odd-even effect Nonequilibrium Green's function method Density functional theory
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Surface phonon resonance:A new mechanism for enhancing photonic spin Hall effect and refractive index sensor
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作者 程杰 汪承龙 +3 位作者 李一铭 张亚林 刘胜利 董鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第8期254-261,共8页
Metal-based surface plasmon resonance(SPR)plays an important role in enhancing the photonic spin Hall effect(SHE)and developing sensitive optical sensors.However,the very large negative permittivities of metals limit ... Metal-based surface plasmon resonance(SPR)plays an important role in enhancing the photonic spin Hall effect(SHE)and developing sensitive optical sensors.However,the very large negative permittivities of metals limit their applications beyond the near-infrared regime.In this work,we theoretically present a new mechanism to enhance the photonic SHE by taking advantage of SiC-supported surface phonon resonance(SPhR)in the mid-infrared regime.The transverse displacement of photonic SHE is very sensitive to the wavelength of incident light and the thickness of SiC layer.Under the optimal parameter setup,the calculated largest transverse displacement of SiC-based SPhR structure reaches up to 163.8 ym,which is much larger than the condition of SPR.Moreover,an NO_(2) gas sensor based on the SPhR-enhanced photonic SHE is theoretically proposed with the superior sensing performance.Both the intensity and angle sensitivity of this sensor can be effectively manipulated by varying the damping rate of SiC.The results may provide a promising paradigm to enhance the photonic SHE in the mid-infrared region and open up new opportunity of highly sensitive refractive index sensors. 展开更多
关键词 photonic spin Hall effect refractive index sensor surface phonon resonance SIC
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Anomalous spin Josephson effect in spin superconductors
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作者 曾文 沈瑞 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第3期126-131,共6页
The spin superconductor state is the spin-polarized triplet exciton condensate,which can be viewed as a counterpart of the charge superconductor state.As an analogy of the charge Josephson effect,the spin Josephson ef... The spin superconductor state is the spin-polarized triplet exciton condensate,which can be viewed as a counterpart of the charge superconductor state.As an analogy of the charge Josephson effect,the spin Josephson effect can be generated in the spin superconductor/normal metal/spin superconductor junctions.Here we study the spin supercurrent in the Josephson junctions consisting of two spin superconductors with noncollinear spin polarizations.For the Josephson junctions with out-of-plane spin polarizations,the possibleπ-state spin supercurrent appears due to the Fermi momentum-splitting Andreev-like reflections at the normal metal/spin superconductor interfaces.For the Josephson junctions with in-plane spin polarizations,the anomalous spin supercurrent appears and is driven by the misorientation angle of the in-plane polarizations.The symmetry analysis shows that the appearance of the anomalous spin Josephson current is possible when the combined symmetry of the spin rotation and the time reversal is broken. 展开更多
关键词 tunneling junction spin supercurrent 0-πtransition anomalous spin Josephson effect
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Spin transport characteristics modulated by the GeBi interlayer in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures
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作者 李明明 张磊 +1 位作者 金立川 郭海中 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第2期471-475,共5页
For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development... For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials. 展开更多
关键词 spin current Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures spin pumping inverse spin Hall effect
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Perfect thermal spin filtering effect and excellent spin caloritronic properties in strain-modulated Janus VSTe monolayer
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作者 LIU Ye XU Jin-tao +1 位作者 PENG Xiao-ge LONG Meng-qiu 《Journal of Central South University》 CSCD 2024年第12期4613-4624,共12页
The spin caloritronic properties of the Janus VSTe monolayer were investigated using density functional theory(DFT)and the non-equilibrium Green’s function(NEGF)method,implemented in the Atomistix Toolkit(ATK)package... The spin caloritronic properties of the Janus VSTe monolayer were investigated using density functional theory(DFT)and the non-equilibrium Green’s function(NEGF)method,implemented in the Atomistix Toolkit(ATK)package.Our study revealed significant spin-splitting within the Janus VSTe monolayer,which induced spin currents under a temperature gradient across the device.By applying a 1%tensile strain,the Janus VSTe monolayer exhibited a perfect thermal spin filtering effect(SFE),with the spin-up current nearly suppressed to zero.Both the unstrained and strained Janus VSTe monolayers demonstrated excellent spin caloritronic properties,with spin figures of merit of 10.915 and 8.432 at an average temperature of 100 K,respectively.Notably,these properties were found to be sensitive to temperature,performing optimally at lower temperatures.These results suggest a promising avenue for designing spin caloritronic devices aimed at efficient waste heat recovery. 展开更多
关键词 Janus VSTe monolayer density functional theory thermal spin filtering effect spin caloritronic properties strain-modulated
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A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions 被引量:8
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作者 X.F.Han H.X.Wei Z.L.Peng H.D.Yang J.F.Feng G.X.Du Z.B.Sun L.X.Jiang Q.H.Qin M.Ma Y.Wang Z.C.Wen D.P.Liu W.S.Zhan State 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2007年第3期304-306,共3页
Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/ Co75Fe25(2)/Ru(0.75)/CoooFe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit:... Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/ Co75Fe25(2)/Ru(0.75)/CoooFe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm) were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ+1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices. 展开更多
关键词 Nano-ring-type magnetic tunnel junctions NR-MTJ MRAM spin polarization Spin transfer effect
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Exchange coupling and helical spin order in the triangular lattice antiferromagnet CuCrO_2 using first principles 被引量:3
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作者 江学范 刘先锋 +1 位作者 吴银忠 韩玖荣 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期498-504,共7页
The magnetic and electronic properties of the geometrically frustrated triangular antiferromagnet CuCrO2 are investigated by first principles through density functional theory calculations within the generalized gradi... The magnetic and electronic properties of the geometrically frustrated triangular antiferromagnet CuCrO2 are investigated by first principles through density functional theory calculations within the generalized gradient approxi- mations (GGA)+U scheme. The spin exchange interactions up to the third nearest neighbours in the ab plane as well as the coupling between adjacent layers are calculated to examine the magnetism and spin frustration. It is found that CuCrO2 has a natural two-dimensional characteristic of the magnetic interaction. Using Monte Carlo simulation, we obtain the Neel temperature to be 29.9 K, which accords well with the experimental value of 24 K. Based on non- collinear magnetic structure calculations, we verify that the incommensurate spiral-spin structure with (110) spiral plane is believable for the magnetic ground state, which is consistent with the experimental observations. Due to intra-layer geometric spin frustration, parallel helical-spin chains arise along the a, b, or a+ b directions, each with a screw-rotation angle of about I20°. Our calculations of the density of states show that the spin frustration plays an important role in the change of d-p hybridization, while the spin-orbit coupling has a very limited influence on the electronic structure. 展开更多
关键词 magnetically ordered materials MULTIFERROIC spin frustration spin orbit effects
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Spin and valley half metal induced by staggered potential and magnetization in silicene 被引量:2
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作者 汪萨克 田宏玉 +1 位作者 杨永宏 汪军 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第1期379-383,共5页
We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is sho... We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices. 展开更多
关键词 SILICENE spin–orbit interaction spin and valley half metal spin and valley blocking effect
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Spin and valley filter in strain engineered silicene 被引量:1
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作者 汪萨克 汪军 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第3期302-307,共6页
The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valle... The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin–orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene. 展开更多
关键词 spin filtering effect valley filtering effect TRANSMISSION valleytronics
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Macroscopic spin and charge transport theory 被引量:1
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作者 李大芳 施均仁 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第1期282-286,共5页
According to the general principle of non-equilibrium thermodynamics, we propose a set of macroscopic transport equations for the spin transport and the charge transport, In particular, the spin torque is introduced a... According to the general principle of non-equilibrium thermodynamics, we propose a set of macroscopic transport equations for the spin transport and the charge transport, In particular, the spin torque is introduced as a generalized 'current density' to describe the phenomena associated with the spin non-conservation in a unified framework. The Einstein relations and the Onsager relations between different transport phenomena are established. Specifically, the spin transport properties of the isotropic non-magnetic and the isotropic magnetic two-dimensional electron gases are fully described by using this theory, in which only the macroscopic-spin-related transport phenomena allowed by the symmetry of the system are taken into account. 展开更多
关键词 spin torque spin Hall effect Einstein relation Onsager relation
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Topological insulator nanostructures and devices 被引量:1
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作者 修发贤 赵彤彤 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第9期40-53,共14页
Topological insulators' properties and their potential device applications are reviewed. We also explain why topologi- cal insulator (TI) nanostructnres are an important avenue for research and discuss some methods... Topological insulators' properties and their potential device applications are reviewed. We also explain why topologi- cal insulator (TI) nanostructnres are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to ex- ploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized. 展开更多
关键词 topological insulators NANOSTRUCTURES quantum spin Hall effect Aharonov-Bohm effect
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