The Co content dependence of crystal structure and specific magnetization of Fe1-xCox-SiO2granular solid prepared by the sol-gel method have been studied. It is found that the crystal structure, Iattice parameter and ...The Co content dependence of crystal structure and specific magnetization of Fe1-xCox-SiO2granular solid prepared by the sol-gel method have been studied. It is found that the crystal structure, Iattice parameter and specific magnetization of the FeCo alloy particles depend on the Co content.展开更多
A novel silicon-on-insulator （SOI） power metM-oxide-semiconductor field effect transistor with an interface-gate （IG SOI） structure is proposed, in which the trench polysificon gate extends into the buried oxide l...A novel silicon-on-insulator （SOI） power metM-oxide-semiconductor field effect transistor with an interface-gate （IG SOI） structure is proposed, in which the trench polysificon gate extends into the buried oxide layer （BOX） at the source side and an IG is formed. Firstly, the IG offers an extra accumulation channel for the carriers. Secondly, the subsidiary depletion effect of the IG results in a higher impurity doping for the drift region. A low specific on-resistance is therefore obtained under the condition of a slightly enhanced breakdown voltage for the IG SOI. The influences of structure parameters on the device performances are investigated. Compared with the conventional trench gate SOI and lateral planar gate SOI, the specific on-resistances of the IG SOI are reduced by 36.66% and 25.32% with the breakdown voltages enhanced by 2.28% and 10.83% at the same SOI layer of 3 μm, BOX of 1 μm, and half-cell pitch of 5.5 μm, respectively.展开更多
A concept of Specific Structure Efficiency(SSE)was proposed that can be used in the lightweight effect evaluation ofstructures.The main procedures of bionic structure design were introduced systematically.The paramete...A concept of Specific Structure Efficiency(SSE)was proposed that can be used in the lightweight effect evaluation ofstructures.The main procedures of bionic structure design were introduced systematically.The parameter relationship betweenhollow stem of plant and the minimum weight was deduced in detail.In order to improve SSE of pylons,the structural characteristicsof hollow stem were investigated and extracted.Bionic pylon was designed based on analogous biological structuralcharacteristics.Using finite element method based simulation,the displacements and stresses in the bionic pylon were comparedwith those of the conventional pylon.Results show that the SSE of bionic pylon is improved obviously.Static,dynamic andelectromagnetism tests were carried out on conventional and bionic pylons.The weight,stress,displacement and Radar CrossSection(RCS)of both pylons were measured.Experimental results illustrate that the SSE of bionic pylon is markedly improvedthat specific strength efficiency and specific stiffness efficiency of bionic pylon are increased by 52.9%and 43.6%respectively.The RCS of bionic pylon is reduced significantly.展开更多
文摘The Co content dependence of crystal structure and specific magnetization of Fe1-xCox-SiO2granular solid prepared by the sol-gel method have been studied. It is found that the crystal structure, Iattice parameter and specific magnetization of the FeCo alloy particles depend on the Co content.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61404014 and 61405018the Fundamental Research Funds for the Central Universities under Grant Nos CDJZR12160003 and 106112014CDJZR168801
文摘A novel silicon-on-insulator （SOI） power metM-oxide-semiconductor field effect transistor with an interface-gate （IG SOI） structure is proposed, in which the trench polysificon gate extends into the buried oxide layer （BOX） at the source side and an IG is formed. Firstly, the IG offers an extra accumulation channel for the carriers. Secondly, the subsidiary depletion effect of the IG results in a higher impurity doping for the drift region. A low specific on-resistance is therefore obtained under the condition of a slightly enhanced breakdown voltage for the IG SOI. The influences of structure parameters on the device performances are investigated. Compared with the conventional trench gate SOI and lateral planar gate SOI, the specific on-resistances of the IG SOI are reduced by 36.66% and 25.32% with the breakdown voltages enhanced by 2.28% and 10.83% at the same SOI layer of 3 μm, BOX of 1 μm, and half-cell pitch of 5.5 μm, respectively.
基金support by National Natural Science Foundation of China(Grant No.50975012)
文摘A concept of Specific Structure Efficiency(SSE)was proposed that can be used in the lightweight effect evaluation ofstructures.The main procedures of bionic structure design were introduced systematically.The parameter relationship betweenhollow stem of plant and the minimum weight was deduced in detail.In order to improve SSE of pylons,the structural characteristicsof hollow stem were investigated and extracted.Bionic pylon was designed based on analogous biological structuralcharacteristics.Using finite element method based simulation,the displacements and stresses in the bionic pylon were comparedwith those of the conventional pylon.Results show that the SSE of bionic pylon is improved obviously.Static,dynamic andelectromagnetism tests were carried out on conventional and bionic pylons.The weight,stress,displacement and Radar CrossSection(RCS)of both pylons were measured.Experimental results illustrate that the SSE of bionic pylon is markedly improvedthat specific strength efficiency and specific stiffness efficiency of bionic pylon are increased by 52.9%and 43.6%respectively.The RCS of bionic pylon is reduced significantly.
