A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoi...A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C--H groups upon exposure to ultraviolet （UV） radiation. The cross-linking can be completed with a relatively long wavelength UV light （365 nm）. The approach has been applied to methacrylate and styrenic polymers such as commercial poly（methylmethacrylate） （PMMA）, poly（iso-butylmethacrylate） （PiBMA） and poly（4-methylstyrene） （PMS）. The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors （OFETs） through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.展开更多
Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage ...A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.展开更多
Field-effect transistors（FETs） of three diketopyrrolopyrroles（DPP）-based small molecules, 3,6-bis（5-phenylthiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolopyrrole-1,4-dione（PDPPP）, 3,6-bis（5-（4-fluorophenyl）th...Field-effect transistors（FETs） of three diketopyrrolopyrroles（DPP）-based small molecules, 3,6-bis（5-phenylthiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolopyrrole-1,4-dione（PDPPP）, 3,6-bis（5-（4-fluorophenyl）thiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolo pyrrole-1,4-dione（FPDPPPF） and 3,6-bis（5-（4-n-butylphenyl）thiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolo pyrrole-1,4-dione（Bu PDPPPBu）, have been studied in this work. Well aligned crystals of the three molecules were grown from para-xylene by droplet-pinned crystallization method. FETs based on these aligned crystals exhibit a hole mobility up to0.19 cm^2 V 1s 1and electron mobility up to 0.008 cm^2 V 1s 1. The achieved hole mobility is of the same order of magnitude as reported highest hole mobility for DPP-based small molecules, but it is much lower than that of the high-performance DPP-based polymers. The relative low mobility is mainly attributed to the rough crystal surfaces with steps and, thus, non-smooth charge transport channels at the interfaces between the crystals and the dielectrics. This work has implications for understanding the low charge mobility of DPP-based small molecules.展开更多
The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is t...The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.展开更多
We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p...We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.展开更多
The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used...The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.展开更多
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(...Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.展开更多
We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth sur...We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.展开更多
Organic crystals,especially ultra-thin two-dimensional(2D)ones such as monolayer molecular crystals,are fragile and vulnerable to traditional vacuum deposition.Up to now,most of the methods reported for fabricating or...Organic crystals,especially ultra-thin two-dimensional(2D)ones such as monolayer molecular crystals,are fragile and vulnerable to traditional vacuum deposition.Up to now,most of the methods reported for fabricating organic field-effect transistors(OFETs)with top-electrodes on the 2D molecular crystals are based on mechanical-transfer method.Nondestructive method for large scale in-situ electrode deposition is urgent.In this work,the silver mirror reaction(SMR)is introduced to construct top-contact electrodes on 2D organic crystalline thin films.OFETs based on bilayer crystalline films with solution-processed silver electrodes show comparable performance to devices with transferred gold electrodes.In addition to that,OFETs with SMR fabricated silver electrodes show lower contact resistance than the ones with evaporated silver electrodes.Furthermore,the temperature under which SMR electrodes annealed is relatively low(60℃),making this approach applicable to varies of organic semiconductors,such as spin-coated polymer films,vacuum evaporated films,2D and even monolayer crystalline films.Besides,OFETs with sub-micrometer channel width and 25μm channel length are realized which might find practical application in the ultra-small pixel mini/micro-LEDs.展开更多
The various advantages of extended-source(ES),broken gate(BG),and hetero-gate-dielectric(HGD)technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET)in order to enhance the direct-cur...The various advantages of extended-source(ES),broken gate(BG),and hetero-gate-dielectric(HGD)technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET)in order to enhance the direct-current and analog/radio-frequency performance.The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction,and then,the on-state current for the ESBG TFET increases.The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail.The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013,large transconductance of 1200μS/μm,high cut-off frequency of 72.8 GHz,and high gain bandwidth product of 14.3 GHz.Apart from these parameters,the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points,the third-order input interception point,and the third-order intermodulation distortion.Therefore,the ESBG TFET greatly promotes the application potential of conventional TFETs.展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
Donor−acceptor(D−A)conjugated polymers are promising materials for organic transistors including organic field-effect transistors(OFETs)and organic electrochemical transistors(OECTs).The aggregated structure of D−A co...Donor−acceptor(D−A)conjugated polymers are promising materials for organic transistors including organic field-effect transistors(OFETs)and organic electrochemical transistors(OECTs).The aggregated structure of D−A conjugated polymer films,which strongly depends on the crystallization process,is crucial for the device performance.However,the crystallization of D−A conjugated polymers is complicated during solution processing,and the optimal film structure is various in different applications.Therefore,it is significantly important to reveal the relationship between the processing conditions and the resulting aggregated structures.This review provides a systematic understanding of how to control the aggregated structure of D−A conjugated polymer films from the fundamental mechanisms of polymer crystallization.We first discuss the possible nucleation and growth mechanisms of D−A conjugated polymers based on traditional theories or models and current findings.Then,recent progress in controlling the structure of D−A conjugated polymer films for OFETs and OECTs is reviewed.D−A conjugated polymers generally adopt chain-extended crystallization due to their strongly rigid backbone,which makes homogeneous nucleation difficult.A common strategy to control the aggregated structure of D−A conjugated polymer films is to manipulate the heterogeneous nucleation process by tuning the preaggregation.Besides,the effect of the crystallization rate and complicated conditions on the aggregated structure of D−A conjugated polymer films is also discussed.Finally,a concise summary is provided,followed by some current challenges in controlling the aggregated structure of D−A conjugated polymer films.展开更多
Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, w...Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.展开更多
With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration o...With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration of chemical sensors.In this work,a highly sensitive and power-efficient ISFET was proposed based on a metal-ferroelectric-insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function.Along with a remotely connected EG electrode,the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.21674060,21274087,61674102,and 61334008)National Key R&D Program (No.2016YFB0401100)
文摘A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C--H groups upon exposure to ultraviolet （UV） radiation. The cross-linking can be completed with a relatively long wavelength UV light （365 nm）. The approach has been applied to methacrylate and styrenic polymers such as commercial poly（methylmethacrylate） （PMMA）, poly（iso-butylmethacrylate） （PiBMA） and poly（4-methylstyrene） （PMS）. The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors （OFETs） through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.
基金Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001
文摘Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
基金supported by the National Natural Science Foundation of China(Grant No.61306105)the National Science and Technology Major Project of China(Grant No.2011ZX02708-002)+1 种基金the Tsinghua University Initiative Scientific Research Programthe Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-discipline Foundation of China
文摘A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.
基金supported by the 973 Program (No. 2014CB643503)National Natural Science Foundation of China (Nos. 51373150, 51461165301)+1 种基金Zhejiang Province Natural Science Foundation (No. LZ13E030002)Fundamental Research Funds for the Central Universities
文摘Field-effect transistors（FETs） of three diketopyrrolopyrroles（DPP）-based small molecules, 3,6-bis（5-phenylthiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolopyrrole-1,4-dione（PDPPP）, 3,6-bis（5-（4-fluorophenyl）thiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolo pyrrole-1,4-dione（FPDPPPF） and 3,6-bis（5-（4-n-butylphenyl）thiophene-2-yl）-2,5-bis（2-ethylhexyl）pyrrolo pyrrole-1,4-dione（Bu PDPPPBu）, have been studied in this work. Well aligned crystals of the three molecules were grown from para-xylene by droplet-pinned crystallization method. FETs based on these aligned crystals exhibit a hole mobility up to0.19 cm^2 V 1s 1and electron mobility up to 0.008 cm^2 V 1s 1. The achieved hole mobility is of the same order of magnitude as reported highest hole mobility for DPP-based small molecules, but it is much lower than that of the high-performance DPP-based polymers. The relative low mobility is mainly attributed to the rough crystal surfaces with steps and, thus, non-smooth charge transport channels at the interfaces between the crystals and the dielectrics. This work has implications for understanding the low charge mobility of DPP-based small molecules.
文摘The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.
文摘We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.
基金Project supported by the National Ministries and Commissions,China (Grant Nos. 51308040203 and 6139801)the Fundamental Research Funds for the Central Universities,China (Grant Nos. 72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province,China (Grant No. 2010JQ8008)
文摘The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.
基金supported by the National Natural Science Foun-dation of China(Grant Nos.62174122 and U2241244)the Fun-damental Research Funds for the Central Universities(Grant No.2042023kf0116)+1 种基金the Science and Technology Project of China Southern Power Grid Co.,Ltd.(Grant No.GXKJXM20220095)the Hubei Key Laboratory of Electronic Manufacturing and Pack-aging Integration of Wuhan University(Grant No.EMPI2023016)。
文摘Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.
基金Supported by the National Natural Science Foundation of China under Grant No 50573039, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060003085, and the National Key Basic Research Programme of China under Grant No 2002CB613405.
文摘We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
基金supported by the Ministry of Science and Technology of China(Nos.2017YFA0204704 and 2016YFB0401100)the National Natural Science Foundation of China(Nos.21805284 and 21873108)+1 种基金the Chinese Academy of Sciences(Hundred Talents Plan),the China Postdoctoral Science Foundation funded project(No.2019M660807)the Strategic Priority Research Program(No.XDB30000000).
文摘Organic crystals,especially ultra-thin two-dimensional(2D)ones such as monolayer molecular crystals,are fragile and vulnerable to traditional vacuum deposition.Up to now,most of the methods reported for fabricating organic field-effect transistors(OFETs)with top-electrodes on the 2D molecular crystals are based on mechanical-transfer method.Nondestructive method for large scale in-situ electrode deposition is urgent.In this work,the silver mirror reaction(SMR)is introduced to construct top-contact electrodes on 2D organic crystalline thin films.OFETs based on bilayer crystalline films with solution-processed silver electrodes show comparable performance to devices with transferred gold electrodes.In addition to that,OFETs with SMR fabricated silver electrodes show lower contact resistance than the ones with evaporated silver electrodes.Furthermore,the temperature under which SMR electrodes annealed is relatively low(60℃),making this approach applicable to varies of organic semiconductors,such as spin-coated polymer films,vacuum evaporated films,2D and even monolayer crystalline films.Besides,OFETs with sub-micrometer channel width and 25μm channel length are realized which might find practical application in the ultra-small pixel mini/micro-LEDs.
基金the University Natural Science Research Key Project of Anhui Province(Grant No.KJ2020A0075)Excellent Talents Supported Project of Colleges and Universities(Grant No.gxyq2018048)。
文摘The various advantages of extended-source(ES),broken gate(BG),and hetero-gate-dielectric(HGD)technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET)in order to enhance the direct-current and analog/radio-frequency performance.The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction,and then,the on-state current for the ESBG TFET increases.The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail.The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013,large transconductance of 1200μS/μm,high cut-off frequency of 72.8 GHz,and high gain bandwidth product of 14.3 GHz.Apart from these parameters,the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points,the third-order input interception point,and the third-order intermodulation distortion.Therefore,the ESBG TFET greatly promotes the application potential of conventional TFETs.
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
基金supported by the National Natural Science Foundation of China(Grant No.52433009,22203028)the Natural Science Foundation of Hunan Province,China(Grant No.2024JJ5138).
文摘Donor−acceptor(D−A)conjugated polymers are promising materials for organic transistors including organic field-effect transistors(OFETs)and organic electrochemical transistors(OECTs).The aggregated structure of D−A conjugated polymer films,which strongly depends on the crystallization process,is crucial for the device performance.However,the crystallization of D−A conjugated polymers is complicated during solution processing,and the optimal film structure is various in different applications.Therefore,it is significantly important to reveal the relationship between the processing conditions and the resulting aggregated structures.This review provides a systematic understanding of how to control the aggregated structure of D−A conjugated polymer films from the fundamental mechanisms of polymer crystallization.We first discuss the possible nucleation and growth mechanisms of D−A conjugated polymers based on traditional theories or models and current findings.Then,recent progress in controlling the structure of D−A conjugated polymer films for OFETs and OECTs is reviewed.D−A conjugated polymers generally adopt chain-extended crystallization due to their strongly rigid backbone,which makes homogeneous nucleation difficult.A common strategy to control the aggregated structure of D−A conjugated polymer films is to manipulate the heterogeneous nucleation process by tuning the preaggregation.Besides,the effect of the crystallization rate and complicated conditions on the aggregated structure of D−A conjugated polymer films is also discussed.Finally,a concise summary is provided,followed by some current challenges in controlling the aggregated structure of D−A conjugated polymer films.
基金supported by the National Basic Research Program of China(2014CB643503)the National Natural Science Foundation of China(51625304,51373150,51461165301)the Zhejiang Province Natural Science Foundation(LZ13E030002)
文摘Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.
基金the National Natural Science Foundation of China No.52073160the National Key Research and Development Program of China No.2020YFF01014706+1 种基金Beijing Municipal Science and Technology Commission(Z211100002421012)Key Laboratory of Advanced Materials(MOE).
文摘With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration of chemical sensors.In this work,a highly sensitive and power-efficient ISFET was proposed based on a metal-ferroelectric-insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function.Along with a remotely connected EG electrode,the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.
