Interfacial superconductivity(IS)has been a topic of intense interest in condensed matter physics,due to its unique properties and exotic photoelectrical performance.However,there are few reports about IS systems cons...Interfacial superconductivity(IS)has been a topic of intense interest in condensed matter physics,due to its unique properties and exotic photoelectrical performance.However,there are few reports about IS systems consisting of two insulators.Here,motivated by the emergence of an insulator-metal transition in type-Ⅲ heterostructures and the superconductivity in some“special”two-dimensional(2D)semiconductors via electron doping,we predict that the 2D heterostructure SnSe_(2)/PtTe_(2) is a model system for realizing IS by using firstprinciples calculations.Our results show that due to slight but crucial interlayer charge transfer,SnSe_(2)/PtTe_(2) turns to be a type-Ⅲ heterostructure with metallic properties and shows a superconducting transition with the critical temperature(T_(c))of 3.73 K.Similar to the enhanced electron–phonon coupling(EPC)in the electrondoped SnSe_(2) monolayer,the IS in the SnSe_(2)/PtTe_(2) heterostructure mainly originates from the metallized SnSe_(2) layer.Furthermore,we find that its superconductivity is sensitive to tensile lattice strain,forming a domeshaped superconducting phase diagram.Remarkably,at 7%biaxial tensile strain,the superconducting T_(c) can increase more than twofold(8.80 K),resulting from softened acoustic phonons at the𝑀point and enhanced EPC strength.Our study provides a concrete example for realizing IS in type-Ⅲ heterostructures,which waits for future experimental verification.展开更多
硒化锡因其独特的层状晶体结构在新型热电材料领域备受瞩目,其兼具窄带隙、高光吸收系数等优异光电特性。值得注意的是,二维SnSe纳米片展现出独特的量子限域效应,其带隙可通过层数调控在1.1~2.1 eV范围内连续可调,这一特性使其在宽谱响...硒化锡因其独特的层状晶体结构在新型热电材料领域备受瞩目,其兼具窄带隙、高光吸收系数等优异光电特性。值得注意的是,二维SnSe纳米片展现出独特的量子限域效应,其带隙可通过层数调控在1.1~2.1 eV范围内连续可调,这一特性使其在宽谱响应光电器件领域展现出巨大应用潜力。基于上述优势,SnSe材料体系已逐步从热电领域拓展至太阳能电池、光电探测器等前沿光电子器件研究,成为当前低维半导体材料研究的热点方向。本文系统阐释SnSe的晶体结构特征及其各向异性电子能带结构,重点梳理二维SnSe材料的主流制备技术,对于SnSe的掺杂调控策略进行了详细的介绍。详细的叙述了近年来SnSe基光伏器件与光电探测器件的实验研究进展。最后,总结了SnSe基光电器件的未来发展方向与面临的挑战。Tin Selenide (SnSe) has garnered significant attention in the field of novel thermoelectric materials due to its unique layered crystal structure, coupled with excellent optoelectronic properties such as a narrow bandgap and high optical absorption coefficient. Notably, two-dimensional SnSe nanosheets exhibit distinct quantum confinement effects, enabling continuous bandgap tuning from 1.1 to 2.1 eV by adjusting the layer number. This tunability endows SnSe with immense potential for applications in broad-spectrum-responsive optoelectronic devices. Leveraging these advantages, SnSe has gradually expanded from thermoelectric applications into frontier optoelectronic device research, including solar cells and photodetectors, establishing itself as a hotspot in low-dimensional semiconductor studies. This review systematically elucidates the crystal structure characteristics and anisotropic electronic band structure of SnSe, highlights mainstream preparation techniques for two-dimensional SnSe materials, and provides a detailed introduction to doping modulation strategies. Furthermore, it comprehensively reviews recent experimental advancements in SnSe-based photovoltaic and photodetection devices. Finally, the future development directions and challenges facing SnSe-based optoelectronics are summarized.展开更多
SnSe is a promising thermoelectric(TE) compound that has attracted increasing attention in recent years,highlighting its advantages in wide temperature range applications.Nanocomposite material engineering provides a ...SnSe is a promising thermoelectric(TE) compound that has attracted increasing attention in recent years,highlighting its advantages in wide temperature range applications.Nanocomposite material engineering provides a straightforward and practical approach to enhance the TE transport performance and mechanical strength of materials.In this study,SiC nanoparticles with varying mass percentages were incorporated into cubic SnSe-based TE materials using the wet ball milling method via mechanical activation(MA).During the rapid hotpressing sintering(HPS) process,the SiC nanoparticles dispersed at the matrix interface and effectively hindered grains growth owing to the pinning effect.The refined grains and multiple interfaces improved the hole carrier concentration(n) and enhanced the phonon scattering,which collectively optimized the electrical and thermal transport properties of cubic SnSe-based nanocomposites,thereby significantly improving the TE dimensionless figure of merit(ZT).Eventually,the sample with 1.25 wt%SiC achieved the highest ZT of ~1.14 at 750 K,which was twice that of the uncomposite sample.In terms of mechanical properties,the addition of SiC nanoparticles can effectively enhance the Vickers hardness(H_(v)) of the material,further demonstrating that this work offers an effective strategy for improving the performance of cubic SnSe-based TE materials.展开更多
The rock-salt cubic SnSe compound with multiple valleys and inherent low thermal conductivity is considered to be a promising thermoelectric compound.In this study,heterogeneous Pb atoms were strategically introduced ...The rock-salt cubic SnSe compound with multiple valleys and inherent low thermal conductivity is considered to be a promising thermoelectric compound.In this study,heterogeneous Pb atoms were strategically introduced into the lattice of cubic SnSe matrix,synergistically adjusting the thermoelectric transport properties of samples by optimizing hole carrier concentration(n)and suppressing thermal conductivity(κ_(tot)).When the doping content reached 0.08 mol,the peak power factor(PF)at 300 K increased to 20.00μW·cm^(-1)·K^(-2).The growing internal microstrain induced by the differences in atomic size strengthened the phonon scattering and effectively reduced the lattice thermal conductivity(κ_(L)).With further decoupling of the electrical and thermal transport properties,a peak thermoelectric figure of merit(ZT)of 0.82 and an average ZT of 0.42(300-750 K)were achieved in the samples doped with 0.10 mol Pb.These findings highlight the effectiveness of the selected dopants and demonstrate their synergy in improving the performance of thermoelectric materials.展开更多
As functional materials capable of direct thermoelectric energy conversion,thermoelectric materials hold immense promise for waste heat recovery and sustainable energy utilization.Through development in recent decades...As functional materials capable of direct thermoelectric energy conversion,thermoelectric materials hold immense promise for waste heat recovery and sustainable energy utilization.Through development in recent decades,many thermoelectric material systems with excellent performance have been developed.In alignment with the principles of circular economy and sustainable development,the search for new and efficient thermoelectric materials has become one of the most important directions of current research.SnSe has received much attention as an environmentally friendly and cost-effective thermoelectric material system.In particular,polycrystalline SnSe,with the advantages of facile preparation and stable mechanical properties,is suitable for large-scale industrial production.Here,we summarize the common preparation methods of polycrystalline SnSe in the decade of melting,mechanical alloying,and liquid-phase methods,as well as the strategies of property optimization such as microstructure design,grain boundary engineering,and band engineering.Finally,we provide perspectives on future research directions for polycrystalline SnSe to further improve thermoelectric performance and accelerate its practical applications.展开更多
The group Ⅳ–Ⅵ semiconductor,SnSe,is abundant on the earth and is a promising thermoelectric(TE)material due to its low thermal conductivity.However,the p-type SnSe polycrystals have low electrical conductivities du...The group Ⅳ–Ⅵ semiconductor,SnSe,is abundant on the earth and is a promising thermoelectric(TE)material due to its low thermal conductivity.However,the p-type SnSe polycrystals have low electrical conductivities due to their low carrier concentration,significantly limiting their further applications.This study introduced the argyrodite-type Ag_(9)GaSe_(6) compound into the SnSe matrix to effectively increase the hole carrier concentration,increasing the electrical conductivity.A high electrical conductivity of 50.5 S cm^(−1) was obtained for the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample at 323 K.Due to the increased electrical conductivity,the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample had an average power factor(PFave)value of~410μW m^(-1) K^(-2) in the 323–823 K temperature range,a nearly four times enhancement compared to the undoped SnSe sample.Additionally,the thermal conductivity slightly increased due to the introduction of the Ag_(9)GaSe_(6) compound.However,the electrical transport properties were significantly enhanced,making up for the improvement in thermal conductivity.Consequently,the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample obtained a peak thermoelectric figure of merit ZT value of~1.2 at 823 K and a ZT_(ave) value of 0.58 in the 323–823 K temperature range.The proposed strategy improved the ZT and ZT_(ave) values of SnSe-based TE materials at room temperature and provided a systematic strategy for modifying SnSe-based TE materials.Moreover,the thermoelectric properties of SnSe can be effectively improved by introducing the Ag_(9)GaSe_(6) compound for doping,and waste heat power generation can be effectively carried out in the middle temperature region.展开更多
Hydrogen peroxide(H_(2)O_(2)),as a green oxidant,plays a vital role in various applications,including environmental remediation,disinfection,and chemical synthesis[1].The conventional anthraquinone process,despite its...Hydrogen peroxide(H_(2)O_(2)),as a green oxidant,plays a vital role in various applications,including environmental remediation,disinfection,and chemical synthesis[1].The conventional anthraquinone process,despite its industrial maturity and high yield,suffers from high energy consumption,carbon emissions,safety risks,and reliance on precious metals[2].Despite ongoing optimizations,a more sustainable alternative is urgently needed.The direct synthesis of hydrogen peroxide from water and oxygen has long been considered as an ideal alternative due to its theoretical 100%atom efficiency and environmental sustainability.展开更多
Boundary engineering has proven effective in enhancing the thermoelectric performance of materials.SnSe,known for its low thermal conductivity,has garnered significant interest;however,its application is hindered by p...Boundary engineering has proven effective in enhancing the thermoelectric performance of materials.SnSe,known for its low thermal conductivity,has garnered significant interest;however,its application is hindered by poor electrical conductivity.Herein,the Ag_(8)GeSe_(6) is introduced into the p-type polycrystalline SnSe matrix to optimize the thermoelectric performance,and the in-situ Ag_(2)Se precipitates are formed in grain boundaries,which play dual roles,acting as an electron attraction center for improving hole concentration and a phonon scattering center for reducing lattice thermal conductivity.It effectively decouples the thermal and electrical transport properties to optimize the thermoelectric performance.Importantly,the amount of Ag_(2)Se can be controlled by adjusting the amount of Ag_(8)GeSe_(6) added to the SnSe matrix.The introduction of Ag_(8)GeSe_(6) enhances electrical conductivity due to the increased hole carrier caused by the introduced Ag+and the formed electron attraction center(in-situ Ag_(2)Se precipitates).Based on the DFT calculations,the band gap of the Ag_(8)GeSe_(6)-doped samples is considerably decreased,facilitating carrier transport.As a result,the electrical transport properties increase to 808μW m^(−1) K^(−2) at 823 K for SnSe+0.5 wt%Ag_(8)GeSe_(6).In addition,in-situ Ag_(2)Se precipitates in grain boundaries strongly enhance phonon scattering,causing a decrease in lattice thermal conductivity.Furthermore,the presence of defects contributes to a reduction in lattice thermal conductivity.Specifically,the thermal conductivity of SnSe+1.0 wt%Ag_(8)GeSe_(6) decreases to 0.29 W m^(−1) K^(−1) at 823 K.Consequently,SnSe+0.5 wt%Ag_(8)GeSe_(6) obtains a high ZT value of 1.7 at 823 K and maintains a high average ZT value of 0.57 over the temperature range of 323−773 K.Additionally,the mechanical properties of Ag_(8)GeSe_(6)-doped also show an improvement.These advancements can be applied to energy supply applications during deep space exploration.展开更多
The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing a...The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing agent (trisodium citrate) at room temperature under ambient air. The product was characterized by X-ray diffraction (XRD), transmission electron microscopoy (TEM) and X-ray photoelectron spectroscopy (XPS). The results reveal that the SnSe nanorods are well crystalline with an average diameter of 85 nm and the lengths up to 10 μm. The possible mechanism for the formation of SnSe is also discussed.展开更多
基金supported by the National Key R&D Program of China (Grant Nos.2022YFA1403103 and 2019YFA0308603)the National Natural Science Foundation of China (Grant No.12304167)the Shandong Provincial Natural Science Foundation of China (Grant No.ZR2023QA020)。
文摘Interfacial superconductivity(IS)has been a topic of intense interest in condensed matter physics,due to its unique properties and exotic photoelectrical performance.However,there are few reports about IS systems consisting of two insulators.Here,motivated by the emergence of an insulator-metal transition in type-Ⅲ heterostructures and the superconductivity in some“special”two-dimensional(2D)semiconductors via electron doping,we predict that the 2D heterostructure SnSe_(2)/PtTe_(2) is a model system for realizing IS by using firstprinciples calculations.Our results show that due to slight but crucial interlayer charge transfer,SnSe_(2)/PtTe_(2) turns to be a type-Ⅲ heterostructure with metallic properties and shows a superconducting transition with the critical temperature(T_(c))of 3.73 K.Similar to the enhanced electron–phonon coupling(EPC)in the electrondoped SnSe_(2) monolayer,the IS in the SnSe_(2)/PtTe_(2) heterostructure mainly originates from the metallized SnSe_(2) layer.Furthermore,we find that its superconductivity is sensitive to tensile lattice strain,forming a domeshaped superconducting phase diagram.Remarkably,at 7%biaxial tensile strain,the superconducting T_(c) can increase more than twofold(8.80 K),resulting from softened acoustic phonons at the𝑀point and enhanced EPC strength.Our study provides a concrete example for realizing IS in type-Ⅲ heterostructures,which waits for future experimental verification.
文摘硒化锡因其独特的层状晶体结构在新型热电材料领域备受瞩目,其兼具窄带隙、高光吸收系数等优异光电特性。值得注意的是,二维SnSe纳米片展现出独特的量子限域效应,其带隙可通过层数调控在1.1~2.1 eV范围内连续可调,这一特性使其在宽谱响应光电器件领域展现出巨大应用潜力。基于上述优势,SnSe材料体系已逐步从热电领域拓展至太阳能电池、光电探测器等前沿光电子器件研究,成为当前低维半导体材料研究的热点方向。本文系统阐释SnSe的晶体结构特征及其各向异性电子能带结构,重点梳理二维SnSe材料的主流制备技术,对于SnSe的掺杂调控策略进行了详细的介绍。详细的叙述了近年来SnSe基光伏器件与光电探测器件的实验研究进展。最后,总结了SnSe基光电器件的未来发展方向与面临的挑战。Tin Selenide (SnSe) has garnered significant attention in the field of novel thermoelectric materials due to its unique layered crystal structure, coupled with excellent optoelectronic properties such as a narrow bandgap and high optical absorption coefficient. Notably, two-dimensional SnSe nanosheets exhibit distinct quantum confinement effects, enabling continuous bandgap tuning from 1.1 to 2.1 eV by adjusting the layer number. This tunability endows SnSe with immense potential for applications in broad-spectrum-responsive optoelectronic devices. Leveraging these advantages, SnSe has gradually expanded from thermoelectric applications into frontier optoelectronic device research, including solar cells and photodetectors, establishing itself as a hotspot in low-dimensional semiconductor studies. This review systematically elucidates the crystal structure characteristics and anisotropic electronic band structure of SnSe, highlights mainstream preparation techniques for two-dimensional SnSe materials, and provides a detailed introduction to doping modulation strategies. Furthermore, it comprehensively reviews recent experimental advancements in SnSe-based photovoltaic and photodetection devices. Finally, the future development directions and challenges facing SnSe-based optoelectronics are summarized.
基金financially supported by Taishan Scholar Program of Shandong Province(No.tsqn202306225)Shandong Postdoctoral Science Foundation(SDBX2023025)+2 种基金the leader of scientific research studio program of Jinan(grant no.2021GXRC082)the University of Jinan Disciplinary Cross-Convergence Construction Projects 2023(Nos.XKJC-202301 and XKJC-202311)Jinan City-School Integration Development Strategy Project(No.JNSX2023015 and No.JNSX2023018)
文摘SnSe is a promising thermoelectric(TE) compound that has attracted increasing attention in recent years,highlighting its advantages in wide temperature range applications.Nanocomposite material engineering provides a straightforward and practical approach to enhance the TE transport performance and mechanical strength of materials.In this study,SiC nanoparticles with varying mass percentages were incorporated into cubic SnSe-based TE materials using the wet ball milling method via mechanical activation(MA).During the rapid hotpressing sintering(HPS) process,the SiC nanoparticles dispersed at the matrix interface and effectively hindered grains growth owing to the pinning effect.The refined grains and multiple interfaces improved the hole carrier concentration(n) and enhanced the phonon scattering,which collectively optimized the electrical and thermal transport properties of cubic SnSe-based nanocomposites,thereby significantly improving the TE dimensionless figure of merit(ZT).Eventually,the sample with 1.25 wt%SiC achieved the highest ZT of ~1.14 at 750 K,which was twice that of the uncomposite sample.In terms of mechanical properties,the addition of SiC nanoparticles can effectively enhance the Vickers hardness(H_(v)) of the material,further demonstrating that this work offers an effective strategy for improving the performance of cubic SnSe-based TE materials.
基金supported by Taishan Scholar Program of Shandong Province(No.tsqn202306225)Shandong Postdoctoral Science Foundation(SDBX2023025)+2 种基金Leader of Scientific Research Studio Program of Jinan(No.2021GXRC082)University of Jinan Disciplinary Cross-Convergence Construction Projects 2023(Nos.XKJC-202301 and XKJC-202311)Jinan City-School Integration Development Strategy Project(Nos.JNSX2023015 and JNSX2023018).
文摘The rock-salt cubic SnSe compound with multiple valleys and inherent low thermal conductivity is considered to be a promising thermoelectric compound.In this study,heterogeneous Pb atoms were strategically introduced into the lattice of cubic SnSe matrix,synergistically adjusting the thermoelectric transport properties of samples by optimizing hole carrier concentration(n)and suppressing thermal conductivity(κ_(tot)).When the doping content reached 0.08 mol,the peak power factor(PF)at 300 K increased to 20.00μW·cm^(-1)·K^(-2).The growing internal microstrain induced by the differences in atomic size strengthened the phonon scattering and effectively reduced the lattice thermal conductivity(κ_(L)).With further decoupling of the electrical and thermal transport properties,a peak thermoelectric figure of merit(ZT)of 0.82 and an average ZT of 0.42(300-750 K)were achieved in the samples doped with 0.10 mol Pb.These findings highlight the effectiveness of the selected dopants and demonstrate their synergy in improving the performance of thermoelectric materials.
基金supported by the National Natural Science Foundation of China(Nos.52071182,52202049,and 52302048)the“Qinglan Project”of the Young and Middle-aged Academic Leader of Jiangsu Province,the Fundamental Research Funds for the Central Universities(Nos.30921011107,and 30924010206)the opening project of State Key Laboratory of Metastable Materials Science and Technology of Yanshan University(No.202408).
文摘As functional materials capable of direct thermoelectric energy conversion,thermoelectric materials hold immense promise for waste heat recovery and sustainable energy utilization.Through development in recent decades,many thermoelectric material systems with excellent performance have been developed.In alignment with the principles of circular economy and sustainable development,the search for new and efficient thermoelectric materials has become one of the most important directions of current research.SnSe has received much attention as an environmentally friendly and cost-effective thermoelectric material system.In particular,polycrystalline SnSe,with the advantages of facile preparation and stable mechanical properties,is suitable for large-scale industrial production.Here,we summarize the common preparation methods of polycrystalline SnSe in the decade of melting,mechanical alloying,and liquid-phase methods,as well as the strategies of property optimization such as microstructure design,grain boundary engineering,and band engineering.Finally,we provide perspectives on future research directions for polycrystalline SnSe to further improve thermoelectric performance and accelerate its practical applications.
基金supported by the Outstanding Youth Fund of Yunnan Province(Grant No.202201AV070005)the National Natural Science Foundation of China(Grant No.52162029)+1 种基金the National Key R&D Program of China(Grant No.2022YFF0503804)the Yunnan Science and Technology Program(202401AT070403).
文摘The group Ⅳ–Ⅵ semiconductor,SnSe,is abundant on the earth and is a promising thermoelectric(TE)material due to its low thermal conductivity.However,the p-type SnSe polycrystals have low electrical conductivities due to their low carrier concentration,significantly limiting their further applications.This study introduced the argyrodite-type Ag_(9)GaSe_(6) compound into the SnSe matrix to effectively increase the hole carrier concentration,increasing the electrical conductivity.A high electrical conductivity of 50.5 S cm^(−1) was obtained for the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample at 323 K.Due to the increased electrical conductivity,the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample had an average power factor(PFave)value of~410μW m^(-1) K^(-2) in the 323–823 K temperature range,a nearly four times enhancement compared to the undoped SnSe sample.Additionally,the thermal conductivity slightly increased due to the introduction of the Ag_(9)GaSe_(6) compound.However,the electrical transport properties were significantly enhanced,making up for the improvement in thermal conductivity.Consequently,the SnSe+0.5 wt%Ag_(9)GaSe_(6) sample obtained a peak thermoelectric figure of merit ZT value of~1.2 at 823 K and a ZT_(ave) value of 0.58 in the 323–823 K temperature range.The proposed strategy improved the ZT and ZT_(ave) values of SnSe-based TE materials at room temperature and provided a systematic strategy for modifying SnSe-based TE materials.Moreover,the thermoelectric properties of SnSe can be effectively improved by introducing the Ag_(9)GaSe_(6) compound for doping,and waste heat power generation can be effectively carried out in the middle temperature region.
文摘Hydrogen peroxide(H_(2)O_(2)),as a green oxidant,plays a vital role in various applications,including environmental remediation,disinfection,and chemical synthesis[1].The conventional anthraquinone process,despite its industrial maturity and high yield,suffers from high energy consumption,carbon emissions,safety risks,and reliance on precious metals[2].Despite ongoing optimizations,a more sustainable alternative is urgently needed.The direct synthesis of hydrogen peroxide from water and oxygen has long been considered as an ideal alternative due to its theoretical 100%atom efficiency and environmental sustainability.
基金supported by the Outstanding Youth Fund of Yunnan Province(Grant No.202201AV070005)the National Natural Science Foundation of China(Grant No.52162029)the National Key R&D Program of China(Grant No.2022YFF0503804).
文摘Boundary engineering has proven effective in enhancing the thermoelectric performance of materials.SnSe,known for its low thermal conductivity,has garnered significant interest;however,its application is hindered by poor electrical conductivity.Herein,the Ag_(8)GeSe_(6) is introduced into the p-type polycrystalline SnSe matrix to optimize the thermoelectric performance,and the in-situ Ag_(2)Se precipitates are formed in grain boundaries,which play dual roles,acting as an electron attraction center for improving hole concentration and a phonon scattering center for reducing lattice thermal conductivity.It effectively decouples the thermal and electrical transport properties to optimize the thermoelectric performance.Importantly,the amount of Ag_(2)Se can be controlled by adjusting the amount of Ag_(8)GeSe_(6) added to the SnSe matrix.The introduction of Ag_(8)GeSe_(6) enhances electrical conductivity due to the increased hole carrier caused by the introduced Ag+and the formed electron attraction center(in-situ Ag_(2)Se precipitates).Based on the DFT calculations,the band gap of the Ag_(8)GeSe_(6)-doped samples is considerably decreased,facilitating carrier transport.As a result,the electrical transport properties increase to 808μW m^(−1) K^(−2) at 823 K for SnSe+0.5 wt%Ag_(8)GeSe_(6).In addition,in-situ Ag_(2)Se precipitates in grain boundaries strongly enhance phonon scattering,causing a decrease in lattice thermal conductivity.Furthermore,the presence of defects contributes to a reduction in lattice thermal conductivity.Specifically,the thermal conductivity of SnSe+1.0 wt%Ag_(8)GeSe_(6) decreases to 0.29 W m^(−1) K^(−1) at 823 K.Consequently,SnSe+0.5 wt%Ag_(8)GeSe_(6) obtains a high ZT value of 1.7 at 823 K and maintains a high average ZT value of 0.57 over the temperature range of 323−773 K.Additionally,the mechanical properties of Ag_(8)GeSe_(6)-doped also show an improvement.These advancements can be applied to energy supply applications during deep space exploration.
文摘The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing agent (trisodium citrate) at room temperature under ambient air. The product was characterized by X-ray diffraction (XRD), transmission electron microscopoy (TEM) and X-ray photoelectron spectroscopy (XPS). The results reveal that the SnSe nanorods are well crystalline with an average diameter of 85 nm and the lengths up to 10 μm. The possible mechanism for the formation of SnSe is also discussed.
