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Correction:Mechanical force-driven multi-state memory in WO_(3−δ)thin films
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作者 Mingdi Yang Zonglin Lv +8 位作者 Shan Li Jiaqi Li Jinpeng Cao Junjie Chen Yilin Wang Kun Lin Qiang Li Jun Miao Xianran Xing 《Inorganic Chemistry Frontiers》 2024年第16期5359-5360,共2页
The authors regret that the data in Fig.3(i)were incorrect in the original article.The corrected figure is included below.Fig.S4 also contained incorrect data and this figure has been corrected in an updated supplemen... The authors regret that the data in Fig.3(i)were incorrect in the original article.The corrected figure is included below.Fig.S4 also contained incorrect data and this figure has been corrected in an updated supplementary information file.In the corrected figure,Fig.3(i)shows the Schottky fitting results of HRS induced by mechanical force,and the slope values are 8.56(previously 9.49)in the negative voltage area and 13.16(previously 10.65)in the positive voltage area.The corrected Fig.S4 shows the Schottky fitting results of HRS induced by voltage,and the slope values are 14.83(previously 8.53)in the negative voltage area and 15.08(previously 9.97)in the positive voltage area. 展开更多
关键词 multi state memory slope values HRS voltage area Schottky fitting schottky fi mechanical force schottky fitting results
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