We investigate a novel Ga As-based laser power converters(LPCs) grown by metal-organic chemical vapor deposition(MOCVD),which uses a single monolithic structure with six junctions connected by tunnel junctions to obta...We investigate a novel Ga As-based laser power converters(LPCs) grown by metal-organic chemical vapor deposition(MOCVD),which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser,two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W,and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux,and the 4 mm sample shows a higher laser power tolerance.展开更多
A dual-tone technique is used to produce multi-samples in optimising calibration of six-port junction. More accurate results are achieved by using the least-square method and excluding those samples which may cause bi...A dual-tone technique is used to produce multi-samples in optimising calibration of six-port junction. More accurate results are achieved by using the least-square method and excluding those samples which may cause bigger errors. A 0.80 -1.10 GHz microwave integrated circuit （MIC） six-port reflectometer is constructed. Nine test samples are used in the measurement. With Engen＇s calibration procedure, the difference between the HP8510 and the six-port reflectrometer is in the order of 0.20 dB/1.5° for most cases, above 0.50 dB/5.0° at boundary frequency. With the optimised method, the difference is less than 0. 10 dB/1.0° for most cases, and the biggest error is 0.42 dB/2.1° for boundary frequencies.展开更多
Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the po...Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage（I–V） characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61376065 and 61604171)Zhongtian Technology Group Co.Ltd
文摘We investigate a novel Ga As-based laser power converters(LPCs) grown by metal-organic chemical vapor deposition(MOCVD),which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser,two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W,and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux,and the 4 mm sample shows a higher laser power tolerance.
基金The National Natural Science Foundation of China (No.60441006)
文摘A dual-tone technique is used to produce multi-samples in optimising calibration of six-port junction. More accurate results are achieved by using the least-square method and excluding those samples which may cause bigger errors. A 0.80 -1.10 GHz microwave integrated circuit （MIC） six-port reflectometer is constructed. Nine test samples are used in the measurement. With Engen＇s calibration procedure, the difference between the HP8510 and the six-port reflectrometer is in the order of 0.20 dB/1.5° for most cases, above 0.50 dB/5.0° at boundary frequency. With the optimised method, the difference is less than 0. 10 dB/1.0° for most cases, and the biggest error is 0.42 dB/2.1° for boundary frequencies.
基金supported by the National Natural Science Foundation of China(No.61604171)the Jiangsu Province Science Foundation for Youths(No.BK20170431)Zhongtian Technology Group Co.Ltd
文摘Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage（I–V） characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.
