Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources an...Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.展开更多
基金European Union(CALADAN)(825453)Dutch Growth Fund PhotonDelta project。
文摘Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.
