This paper presents the design of single-pole six-throw （SP6T） RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The ...This paper presents the design of single-pole six-throw （SP6T） RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is （＋2.46 V, 0, -2.46 V） in the frequency from 0.1 to 2.7 GHz.展开更多
A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive de...A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.展开更多
基金Project supported by the Zhejiang Provincial Natural Science Foundation of China(No.LZ16F010001)
文摘This paper presents the design of single-pole six-throw （SP6T） RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is （＋2.46 V, 0, -2.46 V） in the frequency from 0.1 to 2.7 GHz.
文摘A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.
