This study presents a real-time tracking algorithm derived from the retina algorithm,designed for the rapid,real-time tracking of straight-line particle trajectories.These trajectories are detected by pixel detectors ...This study presents a real-time tracking algorithm derived from the retina algorithm,designed for the rapid,real-time tracking of straight-line particle trajectories.These trajectories are detected by pixel detectors to localize single-event effects in two-dimensional space.Initially,we developed a retina algorithm to track the trajectory of a single heavy ion and achieved a positional accuracy of 40μm.This was accomplished by analyzing trajectory samples from the simulations using a pixel sensor with a 72×72 pixel array and an 83μm pixel pitch.Subsequently,we refined this approach to create an iterative retina algorithm for tracking multiple heavy-ion trajectories in single events.This iterative version demonstrated a tracking efficiency of over 97%,with a positional resolution comparable to that of single-track events.Furthermore,it exhibits significant parallelism,requires fewer resources,and is ideally suited for implementation in field-programmable gate arrays on board-level systems,facilitating real-time online trajectory tracking.展开更多
The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE....The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm.展开更多
To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated...To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML.展开更多
Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the hi...Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU.展开更多
Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the...Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.展开更多
Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,r...Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,respectively.Single-bit upset and multicell upset events were observed,and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test.The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar.Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed,and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm^2 mg^-1.The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.展开更多
This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,charact...This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,characteristics and limitations of these methods are described.Experimental results for temperature dependence of single-event latchup(SEL)cross-section during heavy ion irradiation along with some aspects of physics-based numerical simulation of heat transfer processes are presented.展开更多
With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we pr...With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions.展开更多
This paper quantitatively discusses the influence of well contact on single-event transient(SET)in sub-20 nm FinFET by two-photon absorption(TPA)pulse laser.Two groups of inverter chains were designed to investigate t...This paper quantitatively discusses the influence of well contact on single-event transient(SET)in sub-20 nm FinFET by two-photon absorption(TPA)pulse laser.Two groups of inverter chains were designed to investigate the impact of well contact distance on the FinFET process.The experimental results show that the SET pulse width has a bimodal symmetric distribution,which is different from that of a bulk planar CMOS device.To investigate the detailed mechanism of the phenomenon,a high-precision FinFET TCAD model was established,in which both Id-Vd and Id-Vg errors were less than 10%compared to the SPICE model provided by the commercial process.TCAD simulation under heavy ion injection showed the mechanism of the abnormal phenomenon,where the well contact plays a major role in charge collection at the near-well contact distance,while the source plays a major role at the far distance.This phenomenon is completely different from that of planar CMOS devices.This indicates that the SET mechanism becomes more complicated during the FinFET process.Therefore,more effective SET hardening methods should be investigated for FinFET.展开更多
The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locati...The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locations and cross sections,for instance,the arithmetic logic unit,register,D-cache,and peripheral,while irradi-ating the on-chip memory(OCM)region.Moreover,event tree analysis was executed based on the obtained microbeam irradiation results.This study quantitatively assesses the probabilities of SEE propagation from the OCM to other blocks in the SoC.展开更多
Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and c...Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally.展开更多
The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric fi...The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.展开更多
This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, differen...This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.展开更多
This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TOD...This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70%compared to C-MOSFETs.Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET,and the gate leakage current is reduced by 95%compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer(LET)value exceeding 75 MeV·cm^(2)/mg.展开更多
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde...This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.展开更多
Herein,3‑aminopropyltriethoxysilane(APTES)was used to modify F‑containing silica slag(SS)by simple grafting and served as a multifunctional barrier layer.The amino group(—NH2)in the amino‑modified SS(NH2‑SS)forms lig...Herein,3‑aminopropyltriethoxysilane(APTES)was used to modify F‑containing silica slag(SS)by simple grafting and served as a multifunctional barrier layer.The amino group(—NH2)in the amino‑modified SS(NH2‑SS)forms ligand bonds or hydrogen bonds with sulfur ions in lithium polysulfides(LiPSs),thus inhibiting the shuttle effect.Electrochemical analyses demonstrated that lithium‑sulfur(Li‑S)batteries employing the NH2‑SS interlayer exhibited discharge specific capacities of 1048 and 789 mAh·g^(-1) at 0.2C and 2C,respectively,and even at 4C,the initial discharge specific capacity remained at 590 mAh·g^(-1),outperforming the Li‑S battery with unmodified SS as the interlayer.展开更多
The in-flight heating process of cerium dioxide(CeO_(2))powders was investigated through experiments and numerical simulations.In the experiment,CeO_(2)powder(average size of 30μm)was injected into radio-frequency(RF...The in-flight heating process of cerium dioxide(CeO_(2))powders was investigated through experiments and numerical simulations.In the experiment,CeO_(2)powder(average size of 30μm)was injected into radio-frequency(RF)argon plasma,and the temperatures were measured using a DPV-2000 monitor.A model combining the electromagnetism,thermal flow,and heat transfer characteristics of powder during in-flight heating in argon plasma was proposed.The melting processes of CeO_(2)powders of different diameters,with and without thermal resistance effect,were investigated.Results show that the heating process of CeO_(2)powder particles consists of three main stages,one of which is relevant to a dimensionless parameter known as the Biot number.When the Biot value≥0.1,thermal resistance increases significantly,especially for the larger powders.The predicted temperature of the particles at the outlet(1800–2880 K)is in good agreement with the experimental result.展开更多
This study focuses on a 60 V trench MOSFET device designed for operation in space radiation environments.By increasing the bulk region concentration and placing the etched gate trench after the P+implantation process,...This study focuses on a 60 V trench MOSFET device designed for operation in space radiation environments.By increasing the bulk region concentration and placing the etched gate trench after the P+implantation process,we successfully reduced the threshold voltage shift from 6.5 to 2.2 V under a total dose of 400 krad(Si)^(60)Co,allowing the device to operate normally.Structurally,by embedding the source metal in the active and terminal regions,the device demonstrated current degradation without experiencing single-event burnout when subjected to a drain voltage of 60 V and a linear energy transfer value of 75.4 MeV·cm^(2)∕mg from tantalum-ion incidence.TCAD simulations verified that the embedded source metal effectively suppressed parasitic transistor conduction and eliminated the base-region expansion effect,thereby lowering the maximum temperature from 8000 to 1400 K.The irradiation effects of the embedded source metal in the terminal region were also investigated,which can improve the reverse recovery and ensure that the terminal metal does not melt prematurely,thereby significantly enhancing the radiation hardness of the device.展开更多
Chitosan(CTS)was grafted onto the surface of amino‑functionalized silver chloride silicon dioxide(AgCl@SiO_(2)‑NH_(2))cores to obtain AgCl@SiO_(2)/CTS hybrid nanoparticles.The as‑obtained AgCl@SiO_(2)/CTS nanoparticle...Chitosan(CTS)was grafted onto the surface of amino‑functionalized silver chloride silicon dioxide(AgCl@SiO_(2)‑NH_(2))cores to obtain AgCl@SiO_(2)/CTS hybrid nanoparticles.The as‑obtained AgCl@SiO_(2)/CTS nanoparticles were chlorinated by NaClO solution to get AgCl@SiO_(2)/CTS‑based chloramine nano‑hybrid materials,denoted as AgCl@SiO_(2)/CTS‑Cl.A transmission electron microscope was used to observe the morphology of the as‑prepared samples AgCl@SiO_(2)/CTS and AgCl@SiO_(2)/CTS‑Cl.At the same time,an X‑ray diffractometer and an infrared spectroscope were utilized to characterize their crystal and chemical structures.Besides,ζpotentials were measured to elucidate the surface modification of AgCl nanoparticles by—NH_(2),the antibacterial mechanism of AgCl@SiO_(2)/CTS‑Cl was investigated by scanning electron microscopy,and Escherichia coli(E.coli)and Staphylococcus aureus(S.aureus)were used as the to‑be‑tested strains to evaluate the antimicrobial activity of samples AgCl@SiO_(2)/CTS and AgCl@SiO_(2)/CTS‑Cl.Findings demonstrate that sample AgCl@SiO_(2)/CTS exhibits a chain‑like structure ascribed to the interaction between—NH_(2),and each AgCl@SiO_(2)/CTS hybrid nanoparticle contains several AgCl cores.In the meantime,sample AgCl@SiO_(2)/CTS‑Cl exhibits excellent antibacterial activity against E.coli and S.aureus,which is attributed to the synergistic antibacterial effect of Ag^(+)and Cl^(-).Sample AgCl@SiO_(2)/CTS‑Cl with a dosage of 640.00μg·mL^(-1) could completely kill the two kinds of tested bacteria in 12 h of incubation;it retains a high antibacterial efficiency even after 10 cycles of antibacterial tests.展开更多
Rechargeable Zn/Sn-air batteries have received considerable attention as promising energy storage devices.However,the electrochemical performance of these batteries is significantly constrained by the sluggish electro...Rechargeable Zn/Sn-air batteries have received considerable attention as promising energy storage devices.However,the electrochemical performance of these batteries is significantly constrained by the sluggish electrocatalytic reaction kinetics at the cathode.The integration of light energy into Zn/Sn-air batteries is a promising strategy for enhancing their performance.However,the photothermal and photoelectric effects generate heat in the battery under prolonged solar irradiation,leading to air cathode instability.This paper presents the first design and synthesis of Ni_(2)-1,5-diamino-4,8-dihydroxyanthraquinone(Ni_(2)DDA),an electronically conductiveπ-d conjugated metal-organic framework(MOF).Ni_(2)DDA exhibits both photoelectric and photothermal effects,with an optical band gap of~1.14 eV.Under illumination,Ni_(2)DDA achieves excellent oxygen evolution reaction performance(with an overpotential of 245 mV vs.reversible hydrogen electrode at 10 mA cm^(−2))and photothermal stability.These properties result from the synergy between the photoelectric and photothermal effects of Ni_(2)DDA.Upon integration into Zn/Sn-air batteries,Ni_(2)DDA ensures excellent cycling stability under light and exhibits remarkable performance in high-temperature environments up to 80℃.This study experimentally confirms the stable operation of photo-assisted Zn/Sn-air batteries under high-temperature conditions for the first time and provides novel insights into the application of electronically conductive MOFs in photoelectrocatalysis and photothermal catalysis.展开更多
基金supported by the National Natural Science Foundation of China(No.12205224)the Research Foundation of Education Bureau of Hubei Province China(No.Q20221703)+1 种基金the National Natural Science Foundation of China(Nos.12035006,U2032140)the National Key Research and Development Program of China(No.2020YFE0202000)。
文摘This study presents a real-time tracking algorithm derived from the retina algorithm,designed for the rapid,real-time tracking of straight-line particle trajectories.These trajectories are detected by pixel detectors to localize single-event effects in two-dimensional space.Initially,we developed a retina algorithm to track the trajectory of a single heavy ion and achieved a positional accuracy of 40μm.This was accomplished by analyzing trajectory samples from the simulations using a pixel sensor with a 72×72 pixel array and an 83μm pixel pitch.Subsequently,we refined this approach to create an iterative retina algorithm for tracking multiple heavy-ion trajectories in single events.This iterative version demonstrated a tracking efficiency of over 97%,with a positional resolution comparable to that of single-track events.Furthermore,it exhibits significant parallelism,requires fewer resources,and is ideally suited for implementation in field-programmable gate arrays on board-level systems,facilitating real-time online trajectory tracking.
基金supported by the National Natural Science Foundation of China(No.U1932143),the National Key Research and Development Program of China(No.2020YFE0202002)the National Natural Science Foundation of China(Nos.11875146,11927901,12075099,12075100,11875145,U2032209)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB34000000).
文摘The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm.
基金supported by the National Natural Science Foundation of China (Nos.U2032209,11975292,12222512)the National Key Research and Development Program of China (2021YFA1601300)+2 种基金the CAS“Light of West China”Programthe CAS Pioneer Hundred Talent Programthe Guangdong Major Project of Basic and Applied Basic Research (No.2020B0301030008)。
文摘To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML.
基金supported by the National Natural Science Foundation of China(Nos.U2032209,12222512,12375193,12305210)the National Key Research and Development Program of China(No.2021YFA1601300)the CAS“Light of West China”Program,the CAS Pioneer Hundred Talent Program,the Guangdong Major Project of Basic and Applied Basic Research(No.2020B0301030008).
文摘Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU.
基金supported by the National Natural Science Foundation of China(No.11505033)the Science and Technology Research Project of Guangdong,China(Nos.2015B090901048 and 2017B090901068)the Science and Technology Plan Project of Guangzhou,China(No.201707010186)
文摘Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.
基金supported by the National Natural Science Foundation of China(Grant Nos.11575138,11835006,11690040,and 11690043)
文摘Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,respectively.Single-bit upset and multicell upset events were observed,and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test.The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar.Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed,and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm^2 mg^-1.The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.
文摘This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,characteristics and limitations of these methods are described.Experimental results for temperature dependence of single-event latchup(SEL)cross-section during heavy ion irradiation along with some aspects of physics-based numerical simulation of heat transfer processes are presented.
基金the National Natural Science Foundation of China(Nos.11079045,11179003 and 11305233)
文摘With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions.
基金supported by Natural Science Foundation of China(Nos.62174180 and 62304258)National Key R&D Program of China(No.2023YFA1609000)。
文摘This paper quantitatively discusses the influence of well contact on single-event transient(SET)in sub-20 nm FinFET by two-photon absorption(TPA)pulse laser.Two groups of inverter chains were designed to investigate the impact of well contact distance on the FinFET process.The experimental results show that the SET pulse width has a bimodal symmetric distribution,which is different from that of a bulk planar CMOS device.To investigate the detailed mechanism of the phenomenon,a high-precision FinFET TCAD model was established,in which both Id-Vd and Id-Vg errors were less than 10%compared to the SPICE model provided by the commercial process.TCAD simulation under heavy ion injection showed the mechanism of the abnormal phenomenon,where the well contact plays a major role in charge collection at the near-well contact distance,while the source plays a major role at the far distance.This phenomenon is completely different from that of planar CMOS devices.This indicates that the SET mechanism becomes more complicated during the FinFET process.Therefore,more effective SET hardening methods should be investigated for FinFET.
基金This work was supported by the National Natural Science Foundation of China(Nos.11575138,11835006,11690040,11690043,and 11705216)the Innovation Center of Radiation Application(No.KFZC2019050321)the China Scholarships Council program(No.201906280343).
文摘The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locations and cross sections,for instance,the arithmetic logic unit,register,D-cache,and peripheral,while irradi-ating the on-chip memory(OCM)region.Moreover,event tree analysis was executed based on the obtained microbeam irradiation results.This study quantitatively assesses the probabilities of SEE propagation from the OCM to other blocks in the SoC.
文摘Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally.
文摘The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.
文摘This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.
基金supported by the Joint Funds of the National Natural Science Foundation of China(Grant No.U2341220)the Hefei Comprehensive National Science Center。
文摘This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70%compared to C-MOSFETs.Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET,and the gate leakage current is reduced by 95%compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer(LET)value exceeding 75 MeV·cm^(2)/mg.
基金supported by the National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment(No.6142910220208)National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.
文摘Herein,3‑aminopropyltriethoxysilane(APTES)was used to modify F‑containing silica slag(SS)by simple grafting and served as a multifunctional barrier layer.The amino group(—NH2)in the amino‑modified SS(NH2‑SS)forms ligand bonds or hydrogen bonds with sulfur ions in lithium polysulfides(LiPSs),thus inhibiting the shuttle effect.Electrochemical analyses demonstrated that lithium‑sulfur(Li‑S)batteries employing the NH2‑SS interlayer exhibited discharge specific capacities of 1048 and 789 mAh·g^(-1) at 0.2C and 2C,respectively,and even at 4C,the initial discharge specific capacity remained at 590 mAh·g^(-1),outperforming the Li‑S battery with unmodified SS as the interlayer.
基金National Natural Science Foundation of China(11875039)Shanxi Scholarship Council of China(2023-033)+2 种基金Fundamental Research Program of Shanxi Province(202303021221071)China Baowu Low Carbon Metallurgical Innovation Foundation(2022)2023 Anhui Major Industrial Innovation Plan Project。
文摘The in-flight heating process of cerium dioxide(CeO_(2))powders was investigated through experiments and numerical simulations.In the experiment,CeO_(2)powder(average size of 30μm)was injected into radio-frequency(RF)argon plasma,and the temperatures were measured using a DPV-2000 monitor.A model combining the electromagnetism,thermal flow,and heat transfer characteristics of powder during in-flight heating in argon plasma was proposed.The melting processes of CeO_(2)powders of different diameters,with and without thermal resistance effect,were investigated.Results show that the heating process of CeO_(2)powder particles consists of three main stages,one of which is relevant to a dimensionless parameter known as the Biot number.When the Biot value≥0.1,thermal resistance increases significantly,especially for the larger powders.The predicted temperature of the particles at the outlet(1800–2880 K)is in good agreement with the experimental result.
基金supported in part by National R&D Program for Major Research Instruments of China(No.62027814)。
文摘This study focuses on a 60 V trench MOSFET device designed for operation in space radiation environments.By increasing the bulk region concentration and placing the etched gate trench after the P+implantation process,we successfully reduced the threshold voltage shift from 6.5 to 2.2 V under a total dose of 400 krad(Si)^(60)Co,allowing the device to operate normally.Structurally,by embedding the source metal in the active and terminal regions,the device demonstrated current degradation without experiencing single-event burnout when subjected to a drain voltage of 60 V and a linear energy transfer value of 75.4 MeV·cm^(2)∕mg from tantalum-ion incidence.TCAD simulations verified that the embedded source metal effectively suppressed parasitic transistor conduction and eliminated the base-region expansion effect,thereby lowering the maximum temperature from 8000 to 1400 K.The irradiation effects of the embedded source metal in the terminal region were also investigated,which can improve the reverse recovery and ensure that the terminal metal does not melt prematurely,thereby significantly enhancing the radiation hardness of the device.
文摘Chitosan(CTS)was grafted onto the surface of amino‑functionalized silver chloride silicon dioxide(AgCl@SiO_(2)‑NH_(2))cores to obtain AgCl@SiO_(2)/CTS hybrid nanoparticles.The as‑obtained AgCl@SiO_(2)/CTS nanoparticles were chlorinated by NaClO solution to get AgCl@SiO_(2)/CTS‑based chloramine nano‑hybrid materials,denoted as AgCl@SiO_(2)/CTS‑Cl.A transmission electron microscope was used to observe the morphology of the as‑prepared samples AgCl@SiO_(2)/CTS and AgCl@SiO_(2)/CTS‑Cl.At the same time,an X‑ray diffractometer and an infrared spectroscope were utilized to characterize their crystal and chemical structures.Besides,ζpotentials were measured to elucidate the surface modification of AgCl nanoparticles by—NH_(2),the antibacterial mechanism of AgCl@SiO_(2)/CTS‑Cl was investigated by scanning electron microscopy,and Escherichia coli(E.coli)and Staphylococcus aureus(S.aureus)were used as the to‑be‑tested strains to evaluate the antimicrobial activity of samples AgCl@SiO_(2)/CTS and AgCl@SiO_(2)/CTS‑Cl.Findings demonstrate that sample AgCl@SiO_(2)/CTS exhibits a chain‑like structure ascribed to the interaction between—NH_(2),and each AgCl@SiO_(2)/CTS hybrid nanoparticle contains several AgCl cores.In the meantime,sample AgCl@SiO_(2)/CTS‑Cl exhibits excellent antibacterial activity against E.coli and S.aureus,which is attributed to the synergistic antibacterial effect of Ag^(+)and Cl^(-).Sample AgCl@SiO_(2)/CTS‑Cl with a dosage of 640.00μg·mL^(-1) could completely kill the two kinds of tested bacteria in 12 h of incubation;it retains a high antibacterial efficiency even after 10 cycles of antibacterial tests.
基金supported by the National Natural Science Foundation of China(No.62464010)Spring City Plan-Special Program for Young Talents(K202005007)+2 种基金Yunnan Talents Support Plan for Young Talents(XDYC-QNRC-2022-0482)Yunnan Local Colleges Applied Basic Research Projects(202101BA070001-138)Frontier Research Team of Kunming University 2023.
文摘Rechargeable Zn/Sn-air batteries have received considerable attention as promising energy storage devices.However,the electrochemical performance of these batteries is significantly constrained by the sluggish electrocatalytic reaction kinetics at the cathode.The integration of light energy into Zn/Sn-air batteries is a promising strategy for enhancing their performance.However,the photothermal and photoelectric effects generate heat in the battery under prolonged solar irradiation,leading to air cathode instability.This paper presents the first design and synthesis of Ni_(2)-1,5-diamino-4,8-dihydroxyanthraquinone(Ni_(2)DDA),an electronically conductiveπ-d conjugated metal-organic framework(MOF).Ni_(2)DDA exhibits both photoelectric and photothermal effects,with an optical band gap of~1.14 eV.Under illumination,Ni_(2)DDA achieves excellent oxygen evolution reaction performance(with an overpotential of 245 mV vs.reversible hydrogen electrode at 10 mA cm^(−2))and photothermal stability.These properties result from the synergy between the photoelectric and photothermal effects of Ni_(2)DDA.Upon integration into Zn/Sn-air batteries,Ni_(2)DDA ensures excellent cycling stability under light and exhibits remarkable performance in high-temperature environments up to 80℃.This study experimentally confirms the stable operation of photo-assisted Zn/Sn-air batteries under high-temperature conditions for the first time and provides novel insights into the application of electronically conductive MOFs in photoelectrocatalysis and photothermal catalysis.
