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Retina algorithm for heavy-ion tracking in single-event effects localization
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作者 Wen-Di Deng Jin-Chuan Wang +5 位作者 Hui-Peng Pan Wei Zhang Jian-Song Wang Fu-Qiang Wang Zi-Li Li Ren-Zhuo Wan 《Nuclear Science and Techniques》 2025年第6期123-135,共13页
This study presents a real-time tracking algorithm derived from the retina algorithm,designed for the rapid,real-time tracking of straight-line particle trajectories.These trajectories are detected by pixel detectors ... This study presents a real-time tracking algorithm derived from the retina algorithm,designed for the rapid,real-time tracking of straight-line particle trajectories.These trajectories are detected by pixel detectors to localize single-event effects in two-dimensional space.Initially,we developed a retina algorithm to track the trajectory of a single heavy ion and achieved a positional accuracy of 40μm.This was accomplished by analyzing trajectory samples from the simulations using a pixel sensor with a 72×72 pixel array and an 83μm pixel pitch.Subsequently,we refined this approach to create an iterative retina algorithm for tracking multiple heavy-ion trajectories in single events.This iterative version demonstrated a tracking efficiency of over 97%,with a positional resolution comparable to that of single-track events.Furthermore,it exhibits significant parallelism,requires fewer resources,and is ideally suited for implementation in field-programmable gate arrays on board-level systems,facilitating real-time online trajectory tracking. 展开更多
关键词 single-event effects Retina algorithm Iterative retina algorithm Heavy ion Particle tracking
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OML:an online multi-particle locating method for high-resolution single-event effects studies
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作者 Yan-Hao Jia Jian-Wei Liao +5 位作者 Hai-Bo Yang Qi-Hao Duan Long-Jie Wang Jiang-Yong Du Hong-Lin Zhang Cheng-Xin Zhao 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2024年第11期61-72,共12页
Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the hi... Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU. 展开更多
关键词 single-event effects Integrated circuits Silicon pixel Sensors Artificial intelligence Gaseous detector
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Prototype of single-event effect localization system with CMOS pixel sensor 被引量:5
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作者 Jun Liu Zhuo Zhou +12 位作者 Dong Wang Shi-Qiang Zhou Xiang-Ming Sun Wei-Ping Ren Bi-Hui You Chao-Song Gao Le Xiao Ping Yang Di Guo Guang-Ming Huang Wei Zhou Cheng-Xin Zhao Min Wang 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2022年第11期10-20,共11页
The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE.... The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm. 展开更多
关键词 single-event effect Radiation resistant Topmetal-M
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An online fast multi-track locating algorithm for high-resolution single-event effect test platform 被引量:2
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作者 Yu-Xiao Hu Hai-Bo Yang +3 位作者 Hong-Lin Zhang Jian-Wei Liao Fa-Tai Mai Cheng-Xin Zhao 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2023年第5期86-100,共15页
To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated... To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML. 展开更多
关键词 Beam tracks Multi-track location Rapid location High accuracy Synthetic data Deep neural network single-event effects Silicon pixel sensors HIRFL
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Investigation of maximum proton energy for qualified ground based evaluation of single-event effects in SRAM devices 被引量:7
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作者 Zhan-Gang Zhang Yun Huang +1 位作者 Yun-Fei En Zhi-Feng Lei 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第3期97-104,共8页
Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the... Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers. 展开更多
关键词 PROTON single-event effect THRESHOLD LET MONTE Carlo simulation
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Single-event effects induced by medium-energy protons in 28 nm system-on-chip 被引量:4
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作者 Wei-Tao Yang Qian Yin +6 位作者 Yang Li Gang Guo Yong-Hong Li Chao-Hui He Yan-Wen Zhang Fu-Qiang Zhang Jin-Hua Han 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第10期55-62,共8页
Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,r... Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,respectively.Single-bit upset and multicell upset events were observed,and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test.The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar.Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed,and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm^2 mg^-1.The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed. 展开更多
关键词 single-event effect PROTON SYSTEM-ON-CHIP
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Development of Contactless Method of the DUT Heating during Single-Event Effect Tests
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作者 Vasily S.Anashin Eugeny V.Mitin +1 位作者 Aleksandr E.Koziukov Ekaterina N.Nekrasova 《Journal of Physical Science and Application》 2018年第2期22-27,共6页
This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,charact... This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,characteristics and limitations of these methods are described.Experimental results for temperature dependence of single-event latchup(SEL)cross-section during heavy ion irradiation along with some aspects of physics-based numerical simulation of heat transfer processes are presented. 展开更多
关键词 single-event effect(SEE)tests HEAVY ions radiation hardness HEATING methods SEL
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Experimental study on heavy ion single-event effects in flash-based FPGAs 被引量:2
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作者 Zhen-Lei Yang Xiao-Hui Wang +6 位作者 Hong Su Jie Liu Tian-Qi Liu Kai Xi Bin Wang Song Gu Qian-Shun She 《Nuclear Science and Techniques》 SCIE CAS CSCD 2016年第1期98-105,共8页
With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we pr... With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions. 展开更多
关键词 Flash 单粒子效应 FPGA 重离子 实验 现场可编程门阵列 设备选择 航天应用
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Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures
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作者 Yin Luo Keyu Liu +5 位作者 Hao Yuan Zhiwen Zhang Chao Han Xiaoyan Tang Qingwen Song Yuming Zhang 《Chinese Physics B》 2025年第9期609-613,共5页
This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TOD... This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70%compared to C-MOSFETs.Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET,and the gate leakage current is reduced by 95%compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer(LET)value exceeding 75 MeV·cm^(2)/mg. 展开更多
关键词 silicon carbide single-event leakage current(SELC) gate oxide electricfield gate leakage current velocity
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Back-gate bias and supply voltage dependency on the single-event upset susceptibility of 6 T CSOI-SRAM
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作者 Li-Wen Yao Jin-Hu Yang +12 位作者 Yu-Zhu Liu Bo Li Yang Jiao Shi-Wei Zhao Qi-Yu Chen Xin-Yu Li Tian-Qi Wang Fan-Yu Liu Jian-Tou Gao Jian-Li Liu Xing-Ji Li Jie Liu Pei-Xiong Zhao 《Nuclear Science and Techniques》 2025年第9期105-115,共11页
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde... This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design. 展开更多
关键词 single-event upset(SEU) Static random-access memory(SRAM) Back-gate voltage Supply voltage
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Single-event-effect propagation investigation on nanoscale system on chip by applying heavy-ion microbeam and event tree analysis 被引量:6
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作者 Wei-Tao Yang Xue-Cheng Du +7 位作者 Yong-Hong Li Chao-Hui He Gang Guo Shu-Ting Shi Li Cai Sarah Azimi Corrado De Sio Luca Sterpone 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2021年第10期156-165,共10页
The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locati... The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locations and cross sections,for instance,the arithmetic logic unit,register,D-cache,and peripheral,while irradi-ating the on-chip memory(OCM)region.Moreover,event tree analysis was executed based on the obtained microbeam irradiation results.This study quantitatively assesses the probabilities of SEE propagation from the OCM to other blocks in the SoC. 展开更多
关键词 System on chip single-event effect Heavy-ion microbeam Event tree analysis
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The single-event effect evaluation technology for nano integrated circuits 被引量:1
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作者 郑宏超 赵元富 +4 位作者 岳素格 范隆 杜守刚 陈茂鑫 于春青 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期75-79,共5页
Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and c... Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally. 展开更多
关键词 single-event effect heavy ion test radiation evaluation method
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Scaling effects of single-event gate rupture in thin oxides 被引量:2
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作者 丁李利 陈伟 +3 位作者 郭红霞 闫逸华 郭晓强 范如玉 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第11期640-644,共5页
The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric fi... The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (1 2 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm). 展开更多
关键词 single-event gate rupture (SEGR) heavy ion thin oxides TCAD simulation
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Modeling and simulation of single-event effect in CMOS circuit 被引量:1
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作者 岳素格 张晓林 +2 位作者 赵元富 刘琳 王汉宁 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期15-24,共10页
This paper reviews the status of research in modeling and simulation of single-event effects(SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, differen... This paper reviews the status of research in modeling and simulation of single-event effects(SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device(direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices(bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients(SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed. 展开更多
关键词 single event effect(SEE) charge collection single event upset(SEU) multi-node upset(MNU)
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Progress in Flexoelectric Effect Research and Related Applications 被引量:1
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作者 Pengwen Guo Mengmeng Jia +3 位作者 Di Guo Tianling Ren Zhong Lin Wang Junyi Zhai 《SmartSys》 2025年第1期39-46,共8页
The flexoelectric effect refers to the electromechanical coupling between electric polarization and mechanical strain gradient.It universally exists in a variety of materials in any space group,such as liquid crystals... The flexoelectric effect refers to the electromechanical coupling between electric polarization and mechanical strain gradient.It universally exists in a variety of materials in any space group,such as liquid crystals,dielectrics,biological materials,and semiconductors.Because of its unique size effect,nanoscale flexoelectricity has shown novel phenomena and promising applications in electronics,optronics,mechatronics,and photovoltaics.In this review,we provide a succinct report on the discovery and development of the flexoelectric effect,focusing on flexoelectric materials and related applications.Finally,we discuss recent flexoelectric research progress and still‐unsolved problems. 展开更多
关键词 electric polarization flexoelectric effect flexotronics size effect strain gradient
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Effects of Fruit-Crop Agroforestry Systems on Pest and Natural Enemy Diversity 被引量:1
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作者 LI Guoyu LIU Tingting +3 位作者 WEI Wenwen ZHANG Shuai LI Zhe ZHANG Wei 《绿洲农业科学与工程》 2025年第1期80-91,共12页
Agricultural intensification has led to an increase in monoculture and the use of chemical pesticides,resulting in a decline in biodiversity and a reduction in ecosystem services,particularly biological pest managemen... Agricultural intensification has led to an increase in monoculture and the use of chemical pesticides,resulting in a decline in biodiversity and a reduction in ecosystem services,particularly biological pest management.However,studies have shown that agroforestry can not only improve land productivity and biodiversity but also regulate some ecosystem services.This study reviews the impacts of physical and biological factors on herbivorous pests,parasites,and predatory natural enemies in fruit-crop agroforestry systems.Fruit-crop agroforestry systems provide high spatial heterogeneity by altering crop layouts,regulating the microclimate and soil quality,and offering food resources and shelter for natural enemies,thus promoting biological pest control.This enhances biological control and makes the agrocomplex system an effective tool for sustainable agriculture.Our research shows that volatile plant substances attract or repel pests and natural enemies based on the characteristics of the insects themselves.When scientifically designed,fruit-crop agroforestry systems provide high spatial heterogeneity and favorable microclimatic conditions,which enhance biological pest control and make the agroforestry system an effective tool for sustainable agriculture.Our research shows that fruit-crop agroforestry systems can provide richer food resources and habitat,enhancing biological pest control and improving pest management. 展开更多
关键词 AGROFORESTRY PEST natural enemy BIODIVERSITY effect factors
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Luteolin and glycyrrhetinic exert cooperative effect on liver cancer by selfassembling into carrier-free nanostructures 被引量:1
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作者 Lanlan Zong Yuxin Dai +6 位作者 Jiahao Xu Chaofeng Qiao Yao Qi Chengyuan Ma Hong Li Xiaobin Pang Xiaohui Pu 《Chinese Chemical Letters》 2025年第10期447-452,共6页
Liver cancer is the fourth cause of cancer-related deaths and the primary cause of death in patients with compensated cirrhosis.In recent years,the role of traditional Chinese medicine in the treatment of liver cancer... Liver cancer is the fourth cause of cancer-related deaths and the primary cause of death in patients with compensated cirrhosis.In recent years,the role of traditional Chinese medicine in the treatment of liver cancer has attracted more and more attention and recognition.Luteolin(LUT)and glycyrrhetinic(GA)are natural compounds extracted from Chinese herbal medicine.LUT exhibits various biological activity including anti-inflammatory,antibacterial,antiviral,anti-tumor,and neuroprotective effects.GA significantly inhibits the growth and metastasis of cancer cells.However,the low water solubility of both compounds hinders their clinical applications.In this study,rod-shaped nanoparticles(NPs)self-assembled from LUT and GA were designed to enhance drug solubility and tumor-targeting capability.We verified that the assembly mechanism of the NPs was π-π stacking.These NPs significantly inhibited the proliferation of liver cancer cells while had no significant effect on normal liver cells.In a mouse model of liver cancer,these NPs demonstrated superior tumor-targeting ability due to the enhanced permeability and retention effect,and the affinity of GA for liver cancer cells,resulting in better therapeutic efficacy with lower systemic toxicity.Results of network pharmacology analysis showed that LUT and GA respectively targeted estrogen receptor 1(ESR1)protein and cyclin-dependent kinase 1(CDK1)protein to corporately induce tumor cell cycle arrest,which induced the inhibition of tumor cell proliferation.In conclusion,this study provides a novel reference for the treatment of liver cancer. 展开更多
关键词 LUTEOLIN Glycyrrhetinic Nanoself-assembly Synergistic effect Liver cancer
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Independent and interactive effects of N and P additions on foliar P fractions in evergreen forests of southern China 被引量:1
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作者 Qingquan Meng Zhijuan Shi +3 位作者 Zhengbing Yan Hans Lambers Yan Luo Wenxuan Han 《Forest Ecosystems》 2025年第1期66-73,共8页
Fertilization or atmospheric deposition of nitrogen(N)and phosphorus(P)to terrestrial ecosystems can alter soil N(P)availability and the nature of nutrient limitation for plant growth.Changing the allocation of leaf P... Fertilization or atmospheric deposition of nitrogen(N)and phosphorus(P)to terrestrial ecosystems can alter soil N(P)availability and the nature of nutrient limitation for plant growth.Changing the allocation of leaf P fractions is potentially an adaptive strategy for plants to cope with soil N(P)availability and nutrient-limiting conditions.However,the impact of the interactions between imbalanced anthropogenic N and P inputs on the concentrations and allocation proportions of leaf P fractions in forest woody plants remains elusive.We conducted a metaanalysis of data about the concentrations and allocation proportions of leaf P fractions,specifically associated with individual and combined additions of N and P in evergreen forests,the dominant vegetation type in southern China where the primary productivity is usually considered limited by P.This assessment allowed us to quantitatively evaluate the effects of N and P additions alone and interactively on leaf P allocation and use strategies.Nitrogen addition(exacerbating P limitation)reduced the concentrations of leaf total P and different leaf P fractions.Nitrogen addition reduced the allocation to leaf metabolic P but increased the allocation to other fractions,while P addition showed opposite trends.The simultaneous additions of N and P showed an antagonistic(mutual suppression)effect on the concentrations of leaf P fractions,but an additive(summary)effect on the allocation proportions of leaf P fractions.These results highlight the importance of strategies of leaf P fraction allocation in forest plants under changes in environmental nutrient availability.Importantly,our study identified critical interactions associated with combined N and P inputs that affect leaf P fractions,thus aiding in predicting plant acclimation strategies in the context of intensifying and imbalanced anthropogenic nutrient inputs. 展开更多
关键词 Anthropogenic nutrient inputs Individual and combined effects Interactive effects Leaf phosphorus fractions Nitrogen and phosphorus additions Nutrient-utilization strategies Woody plants
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Variations in quantifying patient reported outcome measures to estimate treatment effect 被引量:1
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作者 Sathish Muthu Srujun Vadranapu 《World Journal of Methodology》 2025年第2期44-53,共10页
In the practice of healthcare,patient-reported outcomes(PROs)and PRO measures(PROMs)are used as an attempt to observe the changes in complex clinical situations.They guide us in making decisions based on the evidence ... In the practice of healthcare,patient-reported outcomes(PROs)and PRO measures(PROMs)are used as an attempt to observe the changes in complex clinical situations.They guide us in making decisions based on the evidence regarding patient care by recording the change in outcomes for a particular treatment to a given condition and finally to understand whether a patient will benefit from a particular treatment and to quantify the treatment effect.For any PROM to be usable in health care,we need it to be reliable,encapsulating the points of interest with the potential to detect any real change.Using structured outcome measures routinely in clinical practice helps the physician to understand the functional limitation of a patient that would otherwise not be clear in an office interview,and this allows the physician and patient to have a meaningful conver-sation as well as a customized plan for each patient.Having mentioned the rationale and the benefits of PROMs,understanding the quantification process is crucial before embarking on management decisions.A better interpretation of change needs to identify the treatment effect based on clinical relevance for a given condition.There are a multiple set of measurement indices to serve this effect and most of them are used interchangeably without clear demarcation on their differences.This article details the various quantification metrics used to evaluate the treatment effect using PROMs,their limitations and the scope of usage and implementation in clinical practice. 展开更多
关键词 Patient-reported outcome measures Treatment effect Minimal clinical important difference Patient-accepted symptom state Minimum detectable change ORTHOPEDICS
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Support electron inductive effect of Pd-Mn/Ni foam catalyst for robust electrocatalytic hydrodechlorination 被引量:1
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作者 Junxi Li Chao Feng +2 位作者 Chong Chen Yuan Pan Yunqi Liu 《Journal of Environmental Sciences》 2025年第3期288-300,共13页
Structural regulation of Pd-based electrocatalytic hydrodechlorination(EHDC)catalyst for constructing high-efficient cathode materials with low noble metal content and high atom utilization is crucial but still challe... Structural regulation of Pd-based electrocatalytic hydrodechlorination(EHDC)catalyst for constructing high-efficient cathode materials with low noble metal content and high atom utilization is crucial but still challenging.Herein,a support electron inductive effect of Pd-Mn/Ni foam catalyst was proposed via in-situ Mn doping to optimize the electronic structure of the Ni foam(NF),which can inductive regulation of Pd for improving the EHDC performance.The mass activity and current efficiency of Pd-Mn/NF catalyst are 2.91 and 1.34 times superior to that of Pd/NF with 2,4-dichlorophenol as model compound,respectively.The Mn-doped interlayer optimized the electronic structure of Pd by bringing the d-state closer to the Fermi level than Pd on the NF surface,which optimizied the binding of EHDC intermediates.Additionally,the Mn-doped interlayer acted as a promoter for generating H∗and accelerating the EHDC reaction.This work presents a simple and effective regulation strategy for constructing high-efficient cathode catalyst for the EHDC of chlorinated organic compounds. 展开更多
关键词 PALLADIUM Structural Regulation Electrocatalytic hydrodechlorination Support electron inductive effect
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