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The Factors Analysis and Algorithm Implementation of Single-pattern Matching
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作者 刘功申 朱圣军 《Journal of Shanghai Jiaotong university(Science)》 EI 2009年第3期331-337,共7页
By studying the algorithms of single pattern matching, five factors that have effect on time complexity of the algorithm are analyzed. The five factors are: sorting the characters of pattern string in an increasing o... By studying the algorithms of single pattern matching, five factors that have effect on time complexity of the algorithm are analyzed. The five factors are: sorting the characters of pattern string in an increasing order of using frequency, utilizing already-matched pattern suffix information, utilizing already-matched pattern prefix information, utilizing the position factor which is absorbed from quick search algorithm, and utilizing the continue-skip idea which is originally proposed by this paper. Combining all the five factors, a new single pattern matching algorithm is implemented. It's proven by the experiment that the efficiency of new algorithm is the best of all algorithms. 展开更多
关键词 single pattern matching string search algorithm analysis
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Pattern dependence in synergistic effects of total dose on single-event upset hardness 被引量:1
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作者 郭红霞 丁李利 +4 位作者 肖尧 张凤祁 罗尹虹 赵雯 王园明 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期463-467,共5页
The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured re... The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs. 展开更多
关键词 pattern dependence total dose single event upset(SEU) static random access memory(SRAM)
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