By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of ...By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.展开更多
The single event effects(SEEs)evaluations caused by atmospheric neutrons were conducted on three different convolutional neural network(CNN)models(Yolov3,MNIST,and ResNet50)in the atmospheric neutron irradiation spect...The single event effects(SEEs)evaluations caused by atmospheric neutrons were conducted on three different convolutional neural network(CNN)models(Yolov3,MNIST,and ResNet50)in the atmospheric neutron irradiation spectrometer(ANIS)at the China Spallation Neutron Source(CSNS).The Yolov3 and MNIST models were implemented on the XILINX28-nm system-on-chip(So C).Meanwhile,the Yolov3 and ResNet50 models were deployed on the XILINX 16-nm Fin FET Ultra Scale+MPSoC.The atmospheric neutron SEEs on the tested CNN systems were comprehensively evaluated from six aspects,including chip type,network architecture,deployment methods,inference time,datasets,and the position of the anchor boxes.The various types of SEE soft errors,SEE cross-sections,and their distribution were analyzed to explore the radiation sensitivities and rules of 28-nm and 16-nm SoC.The current research can provide the technology support of radiation-resistant design of CNN system for developing and applying high-reliability,long-lifespan domestic artificial intelligence chips.展开更多
The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent L...The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation.展开更多
Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using h...Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.展开更多
Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4...Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.展开更多
In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient sig...In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.展开更多
Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi...Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.展开更多
The synergistic effect of total ionizing dose（TID） on single event effect（SEE） in SiGe heterojunction bipolar transistor（HBT） is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 C...The synergistic effect of total ionizing dose（TID） on single event effect（SEE） in SiGe heterojunction bipolar transistor（HBT） is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co g irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the g irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the g irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.展开更多
Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus...Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.展开更多
The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulat...The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.展开更多
A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional nu...A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.展开更多
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigate...Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.展开更多
Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studi...Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.展开更多
In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltag...In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.展开更多
In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors(SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional(3D) simulation m...In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors(SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional(3D) simulation model is established, the single event effect(SEE) simulation is further carried out on the basis of Si Ge HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient(SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate(C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.展开更多
Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The pa...Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.展开更多
Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM ...Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU)ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.展开更多
This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset （SEU） test in a commercial 65-nm static random access memory cell. The simulation results indicate that ...This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset （SEU） test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.展开更多
This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction...This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.展开更多
Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation method...Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.41304148)
文摘By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.
基金Project supported by the National Natural Science Foundation of China(Grant No.12305303)the Natural Science Foundation of Hunan Province of China(Grant Nos.2023JJ40520,2024JJ2044,and 2021JJ40444)+3 种基金the Science and Technology Innovation Program of Hunan Province,China(Grant No.2020RC3054)the Postgraduate Scientific Research Innovation Project of Hunan Province,China(Grant No.CX20240831)the Natural Science Basic Research Plan in the Shaanxi Province of China(Grant No.2023-JC-QN0015)the Doctoral Research Fund of University of South China(Grant No.200XQD033)。
文摘The single event effects(SEEs)evaluations caused by atmospheric neutrons were conducted on three different convolutional neural network(CNN)models(Yolov3,MNIST,and ResNet50)in the atmospheric neutron irradiation spectrometer(ANIS)at the China Spallation Neutron Source(CSNS).The Yolov3 and MNIST models were implemented on the XILINX28-nm system-on-chip(So C).Meanwhile,the Yolov3 and ResNet50 models were deployed on the XILINX 16-nm Fin FET Ultra Scale+MPSoC.The atmospheric neutron SEEs on the tested CNN systems were comprehensively evaluated from six aspects,including chip type,network architecture,deployment methods,inference time,datasets,and the position of the anchor boxes.The various types of SEE soft errors,SEE cross-sections,and their distribution were analyzed to explore the radiation sensitivities and rules of 28-nm and 16-nm SoC.The current research can provide the technology support of radiation-resistant design of CNN system for developing and applying high-reliability,long-lifespan domestic artificial intelligence chips.
文摘The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation.
基金supported by the National Natural Science Foundation of China(Nos.11690041,11805244,and 11675233)the Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory(No.ZHD 201604)
文摘Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.
基金supported by the Fundamental Research Funds for the Central Universities(No.HIT.KISTP.201404)Harbin science and innovation research special fund(No.2015RAXXJ003)Special fund for development of Shenzhen strategic emerging industries(No.JCYJ20150625142543456)
文摘Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.
文摘In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004)the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070)
文摘Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704127 and 61574171)the Fundamental Research Funds for the Central Universities,China(Grant No.XJS17067)
文摘The synergistic effect of total ionizing dose（TID） on single event effect（SEE） in SiGe heterojunction bipolar transistor（HBT） is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co g irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the g irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the g irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070)
文摘Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274106,11175138,and 61601352)
文摘The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.
基金Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004)
文摘A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)Hunan Provincial Innovation Foundation for Postgraduates,China (Grant No. CX2011B026)
文摘Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006)
文摘Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.
基金Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)
文摘In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.
基金supported by the National Natural Science Foundation of China(Grant No.61274106)
文摘In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors(SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional(3D) simulation model is established, the single event effect(SEE) simulation is further carried out on the basis of Si Ge HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient(SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate(C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11575138,11835006,11690040,and 11690043)the Fund from Innovation Center of Radiation Application(Grant No.KFZC2019050321)+1 种基金the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics(Grant No.ZWK1804)the Program of China Scholarships Council(Grant No.201906280343)。
文摘Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11690041 and 11675233)the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C054).
文摘Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU)ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.
基金supported by the National Natural Science Foundation of China(Grant Nos.11690041 and 11675233)
文摘This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset （SEU） test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.
文摘This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261,11690041,and 11675233)
文摘Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.
