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Orbital angular momentum density and spiral spectra of Lorentz–Gauss vortex beams passing through a single slit
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作者 季志跃 周国泉 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期190-197,共8页
Based on the Hermite–Gaussian expansion of the Lorentz distribution and the complex Gaussian expansion of the aperture function, an analytical expression of the Lorentz–Gauss vortex beam with one topological charge ... Based on the Hermite–Gaussian expansion of the Lorentz distribution and the complex Gaussian expansion of the aperture function, an analytical expression of the Lorentz–Gauss vortex beam with one topological charge passing through a single slit is derived. By using the obtained analytical expressions, the properties of the Lorentz–Gauss vortex beam passing through a single slit are numerically demonstrated. According to the intensity distribution or the phase distribution of the Lorentz–Gauss vortex beam, one can judge whether the topological charge is positive or negative. The effects of the topological charge and three beam parameters on the orbital angular momentum density as well as the spiral spectra are systematically investigated respectively. The optimal choice for measuring the topological charge of the diffracted Lorentz–Gauss vortex beam is to make the single slit width wider than the waist of the Gaussian part. 展开更多
关键词 Lorentz–Gauss vortex beam single slit orbital angular momentum density topological charge
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Robot conquers the 42.195⁃km marathon
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作者 卢江 《疯狂英语(新读写)》 2025年第7期52-53,78,共3页
Laibo 2,a quadruped robot(四足机器人)developed in the Republic of Korea,has become the first robot to complete a full marathon on a single charge after running the 42.195⁃km Sangju Dried Persimmon Marathon.
关键词 robot MARATHON single charge quadruped robot
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A sensitive charge scanning probe based on silicon single electron transistor
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作者 苏丽娜 李欣幸 +1 位作者 秦华 顾晓峰 《Journal of Semiconductors》 EI CAS CSCD 2016年第4期73-76,共4页
Single electron transistors(SETs) are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insul... Single electron transistors(SETs) are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insulatorbased SET scanning probe. The fabricated SET is located about 10 m away from the probe tip. The SET with a quantum dot of about 70 nm in diameter exhibits an obvious Coulomb blockade effect measured at 4.1 K. The Coulomb blockade energy is about 18 me V, and the charge sensitivity is in the order of 10^-(5)–10(^-3)e/Hz^(1/2). This SET scanning probe can be used to map charge distribution and sense dynamic charge fluctuation in nanodevices or circuits under test, realizing high sensitivity and high spatial resolution charge detection. 展开更多
关键词 single electron transistor scanning probe silicon-on-insulator Coulomb blockade charge detection
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Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
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作者 方雯 Eddy Simoen +4 位作者 Li Chikang Marc Aoulaiche 罗军 赵超 Cor Claeys 《Journal of Semiconductors》 EI CAS CSCD 2015年第9期66-70,共5页
This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the sili- con film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOl) devices. The film-defect-related RTN w... This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the sili- con film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOl) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain. 展开更多
关键词 random telegraph noise low frequency noise ultra-thin BOX SILICON-ON-INSULATOR single charge trap
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