Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of ...Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.展开更多
Different interlayer films(Mo,Ru,Ta,Ti and Zn)were proposed to reduce sheet resistance(Rs)and improve thermal stability for nickel(Ni)silicide formation.It was found that the Zn and Mo interlayers reduced nickel silic...Different interlayer films(Mo,Ru,Ta,Ti and Zn)were proposed to reduce sheet resistance(Rs)and improve thermal stability for nickel(Ni)silicide formation.It was found that the Zn and Mo interlayers reduced nickel silicide Rs much more than those by the Ru,Ta and Ti interlayers at 700℃.The corrosion rates of the Mo,Ru,Ti and Zn interlayers were higher than that of NiSi in H2SO4:H2O2=4:1 at 80℃.Overall,Zn and Mo were candidates of interlayers for Ni silicide formation due to lower nickel silicide resistivity,high etching selectivity with NiSi and better thermal stability.展开更多
文摘Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.
文摘Different interlayer films(Mo,Ru,Ta,Ti and Zn)were proposed to reduce sheet resistance(Rs)and improve thermal stability for nickel(Ni)silicide formation.It was found that the Zn and Mo interlayers reduced nickel silicide Rs much more than those by the Ru,Ta and Ti interlayers at 700℃.The corrosion rates of the Mo,Ru,Ti and Zn interlayers were higher than that of NiSi in H2SO4:H2O2=4:1 at 80℃.Overall,Zn and Mo were candidates of interlayers for Ni silicide formation due to lower nickel silicide resistivity,high etching selectivity with NiSi and better thermal stability.
