Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matri...Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matrix computation.By combining electronic,photonic,and optoelectronic devices and circuits together,silicon-based optoelectronic matrix computation has been demonstrating great capabilities and feasibilities.Matrix computation is one of the few general-purpose computations that have the potential to exceed the computation performance of digital logic circuits in energy efficiency,computational power,and latency.Moreover,electronic processors also suffer from the tremendous energy consumption of the digital transceiver circuits during high-capacity data interconnections.We review the recent progress in photonic matrix computation,including matrix-vector multiplication,convolution,and multiply–accumulate operations in artificial neural networks,quantum information processing,combinatorial optimization,and compressed sensing,with particular attention paid to energy consumption.We also summarize the advantages of siliconbased optoelectronic matrix computation in data interconnections and photonic-electronic integration over conventional optical computing processors.Looking toward the future of silicon-based optoelectronic matrix computations,we believe that silicon-based optoelectronics is a promising and comprehensive platform for disruptively improving general-purpose matrix computation performance in the post-Moore’s law era.展开更多
In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.T...In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.The demand for communication capacity and speed is growing exponentially.On the other hand,data center and high-performance computing are facing bottlenecks of speed,bandwidth,and energy consumption of electrical interconnections.展开更多
The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which ...The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.展开更多
High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are criti...High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.展开更多
Photoelectrochemical(PEC)water splitting holds significant promise for sustainable energy harvesting that enables efficient conversion of solar energy into green hydrogen.Nevertheless,achievement of high performance i...Photoelectrochemical(PEC)water splitting holds significant promise for sustainable energy harvesting that enables efficient conversion of solar energy into green hydrogen.Nevertheless,achievement of high performance is often limited by charge carrier recombination,resulting in unsatisfactory saturation current densities.To address this challenge,we present a novel strategy for achieving ultrahigh current density by incorporating a bridge layer between the Si substrate and the NiOOH cocatalyst in this paper.The optimal photoanode(TCO/n-p-Si/TCO/Ni)shows a remarkably low onset potential of 0.92 V vs.a reversible hydrogen electrode and a high saturation current density of 39.6 mA·cm^(-2),which is about 92.7%of the theoretical maximum(42.7 mA·cm^(-2)).In addition,the photoanode demonstrates stable operation for 60 h.Our systematic characterizations and calculations demonstrate that the bridge layer facilitates charge transfer,enhances catalytic performance,and provides corrosion protection to the underlying substrate.Notably,the integration of this photoanode into a PEC device for overall water splitting leads to a reduction of the onset potential.These findings provide a viable pathway for fabricating highperformance industrial photoelectrodes by integrating a substrate and a cocatalyst via a transparent and conductive bridge layer.展开更多
In recent years,optoelectronic synapses have garnered significant attention in the field of neuromorphic computing due to their integration of optical sensing and synaptic functions.In this work,we propose an optoelec...In recent years,optoelectronic synapses have garnered significant attention in the field of neuromorphic computing due to their integration of optical sensing and synaptic functions.In this work,we propose an optoelectronic synapse based on IGZO/Bi_(3.25)La_(0.75)Ti_3O_(12)heterojunction.Under UV light stimulation,this device can simulate a range of synaptic behaviors,including paired-pulse facilitation,spike-intensity-dependent plasticity,spike-number-dependent plasticity,spike-width-dependent plasticity,and the transition from short-term memory to long-term memory.The majority of perceptible information for humans is acquired through the visual system.The 3×3 retinal morphology synapse arrays constructed based on plasticity behaviors not only integrates light perception and storage functions but also exhibits adaptive adjustment capabilities to address image blurring caused by object movement.At the same time,in CNN recognition training,the device successfully simulates the learning-relearning mechanism of the human brain.These findings highlight the device's immense potential for applications in artificial vision systems.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the che...The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations.展开更多
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapt...An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.展开更多
The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties ...The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel physics.The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance.The strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2D semiconductors.In this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors,such as Janus 2D and 2D-Xene structures.Moreover,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized.Furthermore,the applications of strain-engineered 2D semiconductors in sensors,photodetectors and nanogenerators are also highlighted.At last,we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.展开更多
In the past decade, metal-halide perovskites have attracted increasing attention in optoelectronics, due to their superior optoelectronic properties.However, inherent instabilities of conventional three-dimensional(3D...In the past decade, metal-halide perovskites have attracted increasing attention in optoelectronics, due to their superior optoelectronic properties.However, inherent instabilities of conventional three-dimensional(3D)perovskites over moisture, heat, and light remain a severe challenge before the realization of commercial application of metal-halide perovskites.Interestingly, when the dimensions of metal-halide perovskites are reduced to two dimensions(2D), many of the novel properties will arise, such as enlarged bandgap, high photoluminescence quantum yield, and large exciton binding energy. As a result, 2D metal-halide perovskite-based optoelectronic devices display excellent performance, particularly as ambient stable solar cells with excellent power conversion efficiency(PCE), high-performance light-emitting diodes(LEDs) with sharp emission peak, and high-sensitive photodetectors. In this review, we first introduce the synthesis, structure,and physical properties of 2D perovskites. Then, the 2D perovskite-based solar cells, LEDs, and photodetectors are discussed. Finally, a brief overview of the opportunities and challenges for 2D perovskite optoelectronics is presented.展开更多
The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of sil...The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm.展开更多
Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays...Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.展开更多
Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utiliz...Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries.展开更多
A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative ...A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative of methyl oleate.Trimethylsilylation reaction was introduced to further improve methyl oleate oxidation stability and lubricity after epoxidation and open-ring reactions.The order of effectiveness of acid binding agent was N,N-diisopropylethylamine(DIEA) > pyridine > diethylamine > triethylamine,and the effects of various parameters on the trimethylsilylation reaction as well as on the silicon-oxygen bond stability and reaction yield were studied.A maximum yield of 34.54%was achieved at hydroxyl/trimethyl chlorosilane/DIEA molar ratio of1:1.25:1,reaction temperature 40℃,reaction time 1.5 h.展开更多
In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development ...In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.展开更多
Two-dimensional(2D) layered perovskites have emerged as potential alternates to traditional three-dimensional(3D)analogs to solve the stability issue of perovskite solar cells. In recent years, many efforts have been ...Two-dimensional(2D) layered perovskites have emerged as potential alternates to traditional three-dimensional(3D)analogs to solve the stability issue of perovskite solar cells. In recent years, many efforts have been spent on manipulating the interlayer organic spacing cation to improve the photovoltaic properties of Dion–Jacobson(DJ) perovskites. In this work, a serious of cycloalkane(CA) molecules were selected as the organic spacing cation in 2D DJ perovskites, which can widely manipulate the optoelectronic properties of the DJ perovskites. The underlying relationship between the CA interlayer molecules and the crystal structures, thermodynamic stabilities, and electronic properties of 58 DJ perovskites has been investigated by using automatic high-throughput workflow cooperated with density-functional(DFT) calculations.We found that these CA-based DJ perovskites are all thermodynamic stable. The sizes of the cycloalkane molecules can influence the degree of inorganic framework distortion and further tune the bandgaps with a wide range of 0.9–2.1 eV.These findings indicate the cycloalkane molecules are suitable as spacing cation in 2D DJ perovskites and provide a useful guidance in designing novel 2D DJ perovskites for optoelectronic applications.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost elect...The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.展开更多
The ever-increasing demand for smart optoelectronics spurs the relentless pursuit of transparent wireless devices as a game-changing technology that can provide unseen visual information behind the electronics.To enab...The ever-increasing demand for smart optoelectronics spurs the relentless pursuit of transparent wireless devices as a game-changing technology that can provide unseen visual information behind the electronics.To enable successful operation of the transparent wireless devices,their power sources should be highly transparent in addition to acquiring reliable electrochemical performance.Among various transparent power sources,supercapacitors(SCs)have been extensively investigated as a promising candidate due to their exceptional cyclability,power capability,material diversity,and scalable/low-cost processability.Herein,we describe current status and challenges of transparent SCs,with a focus on their core materials,performance advancements,and integration with application devices.A special attention is devoted to transparent conductive electrodes(TCEs)which act as a keyenabling component in the transparent SCs.Based on fundamental understanding of optical theories and operating principles of transparent materials,we comprehensively discuss materials chemistry,structural design,and fabrication techniques of TCEs.In addition,noteworthy progresses of transparent SCs are briefly overviewed in terms of their architectural design,opto-electrochemical performance,flexibility,form factors,and integration compatibility with transparent flexible/wearable devices of interest.Finally,development direction and outlook of transparent SCs are explored along with their viable roles in future application fields.展开更多
基金supported by the National Natural Science Foundation of China(62035001 and 61775005)。
文摘Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matrix computation.By combining electronic,photonic,and optoelectronic devices and circuits together,silicon-based optoelectronic matrix computation has been demonstrating great capabilities and feasibilities.Matrix computation is one of the few general-purpose computations that have the potential to exceed the computation performance of digital logic circuits in energy efficiency,computational power,and latency.Moreover,electronic processors also suffer from the tremendous energy consumption of the digital transceiver circuits during high-capacity data interconnections.We review the recent progress in photonic matrix computation,including matrix-vector multiplication,convolution,and multiply–accumulate operations in artificial neural networks,quantum information processing,combinatorial optimization,and compressed sensing,with particular attention paid to energy consumption.We also summarize the advantages of siliconbased optoelectronic matrix computation in data interconnections and photonic-electronic integration over conventional optical computing processors.Looking toward the future of silicon-based optoelectronic matrix computations,we believe that silicon-based optoelectronics is a promising and comprehensive platform for disruptively improving general-purpose matrix computation performance in the post-Moore’s law era.
文摘In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.The demand for communication capacity and speed is growing exponentially.On the other hand,data center and high-performance computing are facing bottlenecks of speed,bandwidth,and energy consumption of electrical interconnections.
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2021YFB2206504)the National Natural Science Foundation of China(Grant No.62235017)the China Postdoctoral Science Foundation(Grant No.2021M703125).
文摘The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0205704 and 2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.91964107 and 61774133)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.2018XZZX003-02)the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Zhejiang University Education Foundation Global Partnership Fund.
文摘High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.
基金supported by Multi-Year Research Grants from the University of Macao(MYRG-GRG2023-00010-IAPME,MYRG-GRG2024-00038-IAPME,MYRG2022-00026-IAPME)the Science and Technology Development Fund(FDCT)from Macao SAR(0023/2023/AFJ,0050/2023/RIB2,006/2022/ALC,0087/2024/AFJ,0111/2022/A2).
文摘Photoelectrochemical(PEC)water splitting holds significant promise for sustainable energy harvesting that enables efficient conversion of solar energy into green hydrogen.Nevertheless,achievement of high performance is often limited by charge carrier recombination,resulting in unsatisfactory saturation current densities.To address this challenge,we present a novel strategy for achieving ultrahigh current density by incorporating a bridge layer between the Si substrate and the NiOOH cocatalyst in this paper.The optimal photoanode(TCO/n-p-Si/TCO/Ni)shows a remarkably low onset potential of 0.92 V vs.a reversible hydrogen electrode and a high saturation current density of 39.6 mA·cm^(-2),which is about 92.7%of the theoretical maximum(42.7 mA·cm^(-2)).In addition,the photoanode demonstrates stable operation for 60 h.Our systematic characterizations and calculations demonstrate that the bridge layer facilitates charge transfer,enhances catalytic performance,and provides corrosion protection to the underlying substrate.Notably,the integration of this photoanode into a PEC device for overall water splitting leads to a reduction of the onset potential.These findings provide a viable pathway for fabricating highperformance industrial photoelectrodes by integrating a substrate and a cocatalyst via a transparent and conductive bridge layer.
基金financially supported by the National Natural Science Foundation of China(Grant Nos.11574057 and12172093)the Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515012607)。
文摘In recent years,optoelectronic synapses have garnered significant attention in the field of neuromorphic computing due to their integration of optical sensing and synaptic functions.In this work,we propose an optoelectronic synapse based on IGZO/Bi_(3.25)La_(0.75)Ti_3O_(12)heterojunction.Under UV light stimulation,this device can simulate a range of synaptic behaviors,including paired-pulse facilitation,spike-intensity-dependent plasticity,spike-number-dependent plasticity,spike-width-dependent plasticity,and the transition from short-term memory to long-term memory.The majority of perceptible information for humans is acquired through the visual system.The 3×3 retinal morphology synapse arrays constructed based on plasticity behaviors not only integrates light perception and storage functions but also exhibits adaptive adjustment capabilities to address image blurring caused by object movement.At the same time,in CNN recognition training,the device successfully simulates the learning-relearning mechanism of the human brain.These findings highlight the device's immense potential for applications in artificial vision systems.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported by the National Natural Science Foundation of China (21875107, U1802256, and 22209204)Leading Edge Technology of Jiangsu Province (BK20220009), the Natural Science Foundation of Jiangsu Province (BK20221140)+2 种基金the China Postdoctoral Science Foundation (2022M713364)Jiangsu Specially Appointed Professors ProgramPriority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)。
文摘The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations.
文摘An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.
基金supported by the National Natural Science Foundation of China(51572025,51627801,61435010 and 51702219)the State Key Research Development Program of China(2019YFB2203503)+3 种基金Guangdong Basic and Applied Basic Research Foundation(2019A1515110209)the Science and Technology Innovation Commission of Shenzhen(JCYJ20170818093453105,JCYJ20180305125345378)National Foundation of China(41422050303)Beijing Municipal Science&Technology Commission and the Fundamental Research Funds for Central Universities.
文摘The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel physics.The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance.The strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2D semiconductors.In this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors,such as Janus 2D and 2D-Xene structures.Moreover,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized.Furthermore,the applications of strain-engineered 2D semiconductors in sensors,photodetectors and nanogenerators are also highlighted.At last,we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.
基金financially supported by the National Key Research and Development Program of China (No. 2016YFB0700702)research start-up funding from Guangxi University of Science and Technology (No. 03190219)
文摘In the past decade, metal-halide perovskites have attracted increasing attention in optoelectronics, due to their superior optoelectronic properties.However, inherent instabilities of conventional three-dimensional(3D)perovskites over moisture, heat, and light remain a severe challenge before the realization of commercial application of metal-halide perovskites.Interestingly, when the dimensions of metal-halide perovskites are reduced to two dimensions(2D), many of the novel properties will arise, such as enlarged bandgap, high photoluminescence quantum yield, and large exciton binding energy. As a result, 2D metal-halide perovskite-based optoelectronic devices display excellent performance, particularly as ambient stable solar cells with excellent power conversion efficiency(PCE), high-performance light-emitting diodes(LEDs) with sharp emission peak, and high-sensitive photodetectors. In this review, we first introduce the synthesis, structure,and physical properties of 2D perovskites. Then, the 2D perovskite-based solar cells, LEDs, and photodetectors are discussed. Finally, a brief overview of the opportunities and challenges for 2D perovskite optoelectronics is presented.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51505324,91123036,61471255 and 61474079the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20131402110013the Foundation for Young Scholars of Shanxi Province under Grant No 2014021023-3
文摘The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm.
基金supported by the Natural Science Foundation of Beijing Municipality(No.Z180011)the National Natural Science Foundation of China(Nos.51991340,51991342,51972022,92163205,and 52188101)+2 种基金the National Key Research and Development Program of China(No.2016YFA0202701)the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-025A3)the Overseas Expertise Introduction Projects for Discipline Innovation(No.B14003)。
文摘Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.
基金supported by the National Natural Science Foundation of China (51673017)the National Natural Science Foundation of China (21404005)+1 种基金the Fundamental Research Funds for the Central Universities (XK1802-2)the Natural Science Foundation of Jiangsu Province (BK20150273)。
文摘Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries.
基金Supported by the National Natural Science Foundation of China(21306088)National Key Technologies R&D Program of China(2015BAD15B07)+1 种基金State Key Laboratory of Chemical Engineering(SKL-Ch E-13A01,Tsinghua University,China)Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD,China)
文摘A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative of methyl oleate.Trimethylsilylation reaction was introduced to further improve methyl oleate oxidation stability and lubricity after epoxidation and open-ring reactions.The order of effectiveness of acid binding agent was N,N-diisopropylethylamine(DIEA) > pyridine > diethylamine > triethylamine,and the effects of various parameters on the trimethylsilylation reaction as well as on the silicon-oxygen bond stability and reaction yield were studied.A maximum yield of 34.54%was achieved at hydroxyl/trimethyl chlorosilane/DIEA molar ratio of1:1.25:1,reaction temperature 40℃,reaction time 1.5 h.
基金supported in part by the National Natural Science Foundation of China under Grant Nos.62101117 and 62188102in part by ZTE Industry-University-Institute Cooperation Fundsin part by the Project funded by China Postdoctoral Science Foundation under Grant Nos.2021M700763 and 2022T150113.
文摘In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.
基金supported by the National Natural Science Foundation of China (Grant No. 62004080)the Postdoctoral Innovative Talents Supporting Program (Grant No. BX20190143)the China Postdoctoral Science Foundation (Grant No. 2020M670834)。
文摘Two-dimensional(2D) layered perovskites have emerged as potential alternates to traditional three-dimensional(3D)analogs to solve the stability issue of perovskite solar cells. In recent years, many efforts have been spent on manipulating the interlayer organic spacing cation to improve the photovoltaic properties of Dion–Jacobson(DJ) perovskites. In this work, a serious of cycloalkane(CA) molecules were selected as the organic spacing cation in 2D DJ perovskites, which can widely manipulate the optoelectronic properties of the DJ perovskites. The underlying relationship between the CA interlayer molecules and the crystal structures, thermodynamic stabilities, and electronic properties of 58 DJ perovskites has been investigated by using automatic high-throughput workflow cooperated with density-functional(DFT) calculations.We found that these CA-based DJ perovskites are all thermodynamic stable. The sizes of the cycloalkane molecules can influence the degree of inorganic framework distortion and further tune the bandgaps with a wide range of 0.9–2.1 eV.These findings indicate the cycloalkane molecules are suitable as spacing cation in 2D DJ perovskites and provide a useful guidance in designing novel 2D DJ perovskites for optoelectronic applications.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.
基金supported by the Basic Science Research Program(2018R1A2A1A05019733)Wearable Platform Materials Technology Center(2016R1A5A1009926)through the National Research Foundation of Korea(NRF)grant by the Korean Government(MSIT)Industry Technology Development Program(10080540)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea)
文摘The ever-increasing demand for smart optoelectronics spurs the relentless pursuit of transparent wireless devices as a game-changing technology that can provide unseen visual information behind the electronics.To enable successful operation of the transparent wireless devices,their power sources should be highly transparent in addition to acquiring reliable electrochemical performance.Among various transparent power sources,supercapacitors(SCs)have been extensively investigated as a promising candidate due to their exceptional cyclability,power capability,material diversity,and scalable/low-cost processability.Herein,we describe current status and challenges of transparent SCs,with a focus on their core materials,performance advancements,and integration with application devices.A special attention is devoted to transparent conductive electrodes(TCEs)which act as a keyenabling component in the transparent SCs.Based on fundamental understanding of optical theories and operating principles of transparent materials,we comprehensively discuss materials chemistry,structural design,and fabrication techniques of TCEs.In addition,noteworthy progresses of transparent SCs are briefly overviewed in terms of their architectural design,opto-electrochemical performance,flexibility,form factors,and integration compatibility with transparent flexible/wearable devices of interest.Finally,development direction and outlook of transparent SCs are explored along with their viable roles in future application fields.
