The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to ...The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.展开更多
A siliconizing process to manufacture 6.5% Si steel sheet has been developed. Electric components, such as transformers and reactors are made easily from 6.5% Si steel sheet. However, improved workability is desirable...A siliconizing process to manufacture 6.5% Si steel sheet has been developed. Electric components, such as transformers and reactors are made easily from 6.5% Si steel sheet. However, improved workability is desirable to increase the applications. Therefore the improvement of workability of 6.5% Si steel sheet was investigated, and the results were obtained as follows: (a) workability of 6.5% Si steel sheet is deteriorated by grain boundary oxidization, (b) grain boundary oxidization can be restrained by the addition of C. Workability and magnetic properties of 6.5% Si steel sheet with C addition are discussed. Furthermore, it was found that the workability of high Si steel sheet was improved remarkably by varying the Si content gradient along the thickness without deterioration of high frequency magnetic properties. This newly developed magnetic gradient high Si steel sheet is also discussed.展开更多
The modified Siemens process,which is the major process of producing polycrystalline silicon through current technologies,is a high temperature,slow,semi-batch process and the product is expensive primarily due to the...The modified Siemens process,which is the major process of producing polycrystalline silicon through current technologies,is a high temperature,slow,semi-batch process and the product is expensive primarily due to the large energy consumption.Therefore,the zinc reduction process,which can produce solar-grade silicon in a cost effective manner,should be redeveloped for these conditions.The SiCl2 generation ratio,which stands for the degree of the side reactions,can be decomposed to SiCl4 and ZnCl2 in gas phase zinc atmosphere in the exit where the temperature is very low.Therefore,the lower SiCl2 generation ratio is profitable with lower power consumption.Based on the thermodynamic data for the related pure substances,the relations of the SiCl2 generation ratio and pressure,temperature and the feed molar ratio（n（Zn）/n（SiCl4） are investigated and the graphs thereof are plotted.And the diagrams of Kpθ-T at standard atmosphere pressure have been plotted to account for the influence of temperature on the SiCl2 generation ratio.Furthermore,the diagram of Kpθ-T at different pressures have also been plotted to give an interpretation of the influence of pressure on the SiCl2 generation ratio.The results show that SiCl2 generation ratio increases with increasing temperature,and the higher pressure and excess gas phase zinc can restrict SiCl2 generation ratio.Finally,suitable operational conditions in the practical process of polycrystalline silicon manufacture by gas phase zinc reduction of SiCl4 have been established with 1200 K,0.2 MPa and the feed molar ratio（n（Zn） /n（SiCl4）） of 4 at the entrance.Under these conditions,SiCl2 generation ratio is very low,which indicates that the side reactions can be restricted and the energy consumption is reasonable.展开更多
Fe3O4@SiO2 core–shell composite nanoparticles were successfully prepared by a one-pot process. Tetraethyl-orthosilicate was used as a surfactant to synthesize Fe3O4@SiO2 core–shell structures from prepared Fe3O4 nan...Fe3O4@SiO2 core–shell composite nanoparticles were successfully prepared by a one-pot process. Tetraethyl-orthosilicate was used as a surfactant to synthesize Fe3O4@SiO2 core–shell structures from prepared Fe3O4 nanoparticles. The properties of the Fe3O4 and Fe3O4@SiO2 composite nanoparticles were studied by X-ray diffraction, transmission electron microscopy, energy dispersive spectroscopy, and Fourier transform infrared spectroscopy. The prepared Fe3O4 particles were approximately 12 nm in size, and the thickness of the SiO2 coating was approximately 4 nm. The magnetic properties were studied by vibrating sample magnetometry. The results show that the maximum saturation magnetization of the Fe3O4@SiO2 powder（34.85 A·m^2·kg^–1） was markedly lower than that of the Fe3O4 powder（79.55 A·m^2·kg^–1）, which demonstrates that Fe3O4 was successfully wrapped by SiO2. The Fe3O4@SiO2 composite nanoparticles have broad prospects in biomedical applications; thus, our next study will apply them in magnetic resonance imaging.展开更多
We describe how a direct combination of an axicon and a lens can represent a simple and efficient beam-shaping solution for laser material processing applications.We produce high-angle pseudo-Bessel micro-beams at 155...We describe how a direct combination of an axicon and a lens can represent a simple and efficient beam-shaping solution for laser material processing applications.We produce high-angle pseudo-Bessel micro-beams at 1550 nm,which would be difficult to produce by other methods.Combined with appropriate stretching of femtosecond pulses,we access optimized conditions inside semiconductors allowing us to develop high-aspect-ratio refractive-index writing methods.Using ultrafast microscopy techniques,we characterize the delivered local intensities and the triggered ionization dynamics inside silicon with 200-fs and 50-ps pulses.While similar plasma densities are produced in both cases,we show that repeated picosecond irradiation induces permanent modifications spontaneously growing shot-after-shot in the direction of the laser beam from front-surface damage to the back side of irradiated silicon wafers.The conditions for direct microexplosion and microchannel drilling similar to those today demonstrated for dielectrics still remain inaccessible.Nonetheless,this work evidences higher energy densities than those previously achieved in semiconductors and a novel percussion writing modality to create structures in silicon with aspect ratios exceeding~700 without any motion of the beam.The estimated transient change of conductivity and measured ionization fronts at near luminal speed along the observed microplasma channels support the vision of vertical electrical connections optically controllable at GHz repetition rates.The permanent silicon modifications obtained by percussion writing are light-guiding structures according to a measured positive refractive index change exceeding 10-2.These findings open the door to unique monolithic solutions for electrical and optical through-silicon-vias which are key elements for vertical interconnections in 3D chip stacks.展开更多
文摘The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.
文摘A siliconizing process to manufacture 6.5% Si steel sheet has been developed. Electric components, such as transformers and reactors are made easily from 6.5% Si steel sheet. However, improved workability is desirable to increase the applications. Therefore the improvement of workability of 6.5% Si steel sheet was investigated, and the results were obtained as follows: (a) workability of 6.5% Si steel sheet is deteriorated by grain boundary oxidization, (b) grain boundary oxidization can be restrained by the addition of C. Workability and magnetic properties of 6.5% Si steel sheet with C addition are discussed. Furthermore, it was found that the workability of high Si steel sheet was improved remarkably by varying the Si content gradient along the thickness without deterioration of high frequency magnetic properties. This newly developed magnetic gradient high Si steel sheet is also discussed.
基金Supported by the Provincial personnel training funds(kksy201352109)the National Natural Science Foundation of China(51374118)
文摘The modified Siemens process,which is the major process of producing polycrystalline silicon through current technologies,is a high temperature,slow,semi-batch process and the product is expensive primarily due to the large energy consumption.Therefore,the zinc reduction process,which can produce solar-grade silicon in a cost effective manner,should be redeveloped for these conditions.The SiCl2 generation ratio,which stands for the degree of the side reactions,can be decomposed to SiCl4 and ZnCl2 in gas phase zinc atmosphere in the exit where the temperature is very low.Therefore,the lower SiCl2 generation ratio is profitable with lower power consumption.Based on the thermodynamic data for the related pure substances,the relations of the SiCl2 generation ratio and pressure,temperature and the feed molar ratio（n（Zn）/n（SiCl4） are investigated and the graphs thereof are plotted.And the diagrams of Kpθ-T at standard atmosphere pressure have been plotted to account for the influence of temperature on the SiCl2 generation ratio.Furthermore,the diagram of Kpθ-T at different pressures have also been plotted to give an interpretation of the influence of pressure on the SiCl2 generation ratio.The results show that SiCl2 generation ratio increases with increasing temperature,and the higher pressure and excess gas phase zinc can restrict SiCl2 generation ratio.Finally,suitable operational conditions in the practical process of polycrystalline silicon manufacture by gas phase zinc reduction of SiCl4 have been established with 1200 K,0.2 MPa and the feed molar ratio（n（Zn） /n（SiCl4）） of 4 at the entrance.Under these conditions,SiCl2 generation ratio is very low,which indicates that the side reactions can be restricted and the energy consumption is reasonable.
基金the National Natural Science Foundation of China (No.51274039)the State Key Lab of Advanced Metals and Materials (No.2013-ZD05)the Guangdong Foundation of Research (No.2014B090901003)
文摘Fe3O4@SiO2 core–shell composite nanoparticles were successfully prepared by a one-pot process. Tetraethyl-orthosilicate was used as a surfactant to synthesize Fe3O4@SiO2 core–shell structures from prepared Fe3O4 nanoparticles. The properties of the Fe3O4 and Fe3O4@SiO2 composite nanoparticles were studied by X-ray diffraction, transmission electron microscopy, energy dispersive spectroscopy, and Fourier transform infrared spectroscopy. The prepared Fe3O4 particles were approximately 12 nm in size, and the thickness of the SiO2 coating was approximately 4 nm. The magnetic properties were studied by vibrating sample magnetometry. The results show that the maximum saturation magnetization of the Fe3O4@SiO2 powder（34.85 A·m^2·kg^–1） was markedly lower than that of the Fe3O4 powder（79.55 A·m^2·kg^–1）, which demonstrates that Fe3O4 was successfully wrapped by SiO2. The Fe3O4@SiO2 composite nanoparticles have broad prospects in biomedical applications; thus, our next study will apply them in magnetic resonance imaging.
基金conducted using LaMP facilities at LP3.The project received funding from the French National Research Agency(ANR-22-CE92-0057-0,KiSS project)and the European Union’s Horizon 2020 research and innovation program under grant agreements No.101034324(MSCA-COFUND)and No.724480(ERC).
文摘We describe how a direct combination of an axicon and a lens can represent a simple and efficient beam-shaping solution for laser material processing applications.We produce high-angle pseudo-Bessel micro-beams at 1550 nm,which would be difficult to produce by other methods.Combined with appropriate stretching of femtosecond pulses,we access optimized conditions inside semiconductors allowing us to develop high-aspect-ratio refractive-index writing methods.Using ultrafast microscopy techniques,we characterize the delivered local intensities and the triggered ionization dynamics inside silicon with 200-fs and 50-ps pulses.While similar plasma densities are produced in both cases,we show that repeated picosecond irradiation induces permanent modifications spontaneously growing shot-after-shot in the direction of the laser beam from front-surface damage to the back side of irradiated silicon wafers.The conditions for direct microexplosion and microchannel drilling similar to those today demonstrated for dielectrics still remain inaccessible.Nonetheless,this work evidences higher energy densities than those previously achieved in semiconductors and a novel percussion writing modality to create structures in silicon with aspect ratios exceeding~700 without any motion of the beam.The estimated transient change of conductivity and measured ionization fronts at near luminal speed along the observed microplasma channels support the vision of vertical electrical connections optically controllable at GHz repetition rates.The permanent silicon modifications obtained by percussion writing are light-guiding structures according to a measured positive refractive index change exceeding 10-2.These findings open the door to unique monolithic solutions for electrical and optical through-silicon-vias which are key elements for vertical interconnections in 3D chip stacks.
