Integrated high-linearity modulators are crucial for high dynamic-range microwave photonic(MWP)systems.Conventional linearization schemes usually involve the fine tuning of radio-frequency(RF)power distribution,which ...Integrated high-linearity modulators are crucial for high dynamic-range microwave photonic(MWP)systems.Conventional linearization schemes usually involve the fine tuning of radio-frequency(RF)power distribution,which is rather inconvenient for practical applications and can hardly be implemented on the integrated photonics chip.In this paper,we propose an elegant scheme to linearize a silicon-based modulator in which the active tuning of RF power is eliminated.The device consists of two carrier-depletion-based Mach-Zehnder modulators(MZMs),which are connected in series by a 1×2 thermal optical switch(OS).The OS is used to adjust the ratio between the modulation depths of the two sub-MZMs.Under a proper ratio,the complementary third-order intermodulation distortion(IMD3)of the two sub-MZMs can effectively cancel each other out.The measured spurious-free dynamic ranges for IMD3 are 131,127,118,110,and 109 d B·Hz^(6∕7)at frequencies of 1,10,20,30,and 40 GHz,respectively,which represent the highest linearities ever reached by the integrated modulator chips on all available material platforms.展开更多
Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for ...Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for co-packaged optics,5G,and future 6G applications.In this article,a polarization-insensitive silicon intensity modulator is proposed and experimentally demonstrated based on two-dimensional centrally symmetric gratings,featuring a low polarization-dependent loss of 0.15 dB in minimum and polarization insensitivity of eye diagrams.The device exhibits a low fiber-to-fiber insertion loss of 9 dB and an electro-optic(EO)bandwidth of 49.8 GHz.A modulation speed of up to 224 Gb/s is also demonstrated.展开更多
Background HEPS-BPIX is a prototype of photon counting pixel detector developed for the High Energy Photon Source.It consists of 16 silicon pixel modules which should be tested individually to ensure the function and ...Background HEPS-BPIX is a prototype of photon counting pixel detector developed for the High Energy Photon Source.It consists of 16 silicon pixel modules which should be tested individually to ensure the function and performance.Purpose Due to various factors such as the non-uniformity of the processes and voltage drop,the response of each pixel in the silicon pixel module is not identical completely.The response difference of pixels can be minimized by the threshold calibration.This system is developed for the quality test and calibration of the silicon pixel modules.Methods The system consists of a mother board,a control board and a data acquisition(DAQ)system.The mother board provides necessary resources including power supplies and the fanout of calibration signals.Besides,it can be used to test the connectivity by monitoring the power states.The control board reads data out and provides the clock,trigger and configuration data for the silicon pixel module.The DAQ system sends the control commands and receives the readout data through an Ethernet link.Results Compared with the previous readout system,this designed system has a lower noise level and better scanning curves making the calibration more accurate.And it has been successfully applied to the comparison experiments of the through silicon via and wire-bonding silicon pixel modules.Conclusion The results show that this test system can be used to the quality test and calibration of the silicon pixel modules.In addition,the system can be adapted to the measurement of different pixel array detector modules.展开更多
Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optica...Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.展开更多
Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to th...Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to this frequency.In this study,we demonstrate that this frequency range can be addressed by nanophotonic,silicon-based modulators.We exploit the ultrafast Pockels effect by using the silicon–organic hybrid(SOH)platform,which combines highly nonlinear organic molecules with silicon waveguides.Until now,the bandwidth of these devices was limited by the losses of the radiofrequency(RF)signal and the RC(resistor-capacitor)time constant of the silicon structure.The RF losses are overcome by using a device as short as 500 μm,and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator.Using this method,we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz.Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies.Our device has a voltage–length product of only V_(π)L=11 V mm,which compares favorably with the best silicon-photonic modulators available today.Using cladding materials with stronger nonlinearities,the voltage–length product is expected to improve by more than an order of magnitude.展开更多
We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized usin...We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.展开更多
We comprehensively characterize the transmission performance of m-ary quadrature amplitude modulation(m-QAM) signals through a silicon microring resonator in the experiment. Using orthogonal frequency-division multipl...We comprehensively characterize the transmission performance of m-ary quadrature amplitude modulation(m-QAM) signals through a silicon microring resonator in the experiment. Using orthogonal frequency-division multiplexing based on offset QAM(OFDM/OQAM) which is modulated with m-QAM modulations, we demonstrate low-penalty data transmission of OFDM/OQAM 64-QAM, 128-QAM, 256-QAM, and 512-QAM signals in a silicon microring resonator. The observed optical signal-to-noise ratio(OSNR) penalties are 1.7 dB for 64-QAM,1.7 dB for 128-QAM, and 3.1 dB for 256-QAM at a bit-error rate(BER) of 2 × 10^(-3) and 3.3 dB for 512-QAM at a BER of 2 × 10^(-2). The performance degradation due to the wavelength detuning from the microring resonance is evaluated, showing a wavelength range of ~0.48 nm with BER below 2 × 10^(-3). Moreover, we demonstrate data transmission of 191.2-Gbit/s simultaneous eight wavelength channel OFDM/OQAM 256-QAM signals in a silicon microring resonator, achieving OSNR penalties less than 2 dB at a BER of 2 × 10^(-2).展开更多
The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Consider...The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Considering the electrical nonlinearity in simulation,a 32.2 dB degradation in the CDR3(i.e.,the suppression ratio between the fundamental signal and intermodulation distortion)of the modulator was observed at a modulation speed of 12 GHz,and the spurious free dynamic range was simultaneously degraded by 17.4 dB.It was also found that the linearity of the silicon modulator could be improved by reducing the series resistance of the PN junction.The frequency dependence of the linearity due to the electrical nonlinearity was also investigated.展开更多
Reducing power dissipation in electro-optic modulators is a key step for widespread application of silicon photonics to optical communication.In this work,we design Mach–Zehnder modulators in the silicon-on-insulator...Reducing power dissipation in electro-optic modulators is a key step for widespread application of silicon photonics to optical communication.In this work,we design Mach–Zehnder modulators in the silicon-on-insulator platform,which make use of slow light in a waveguide grating and of a reverse-biased p-n junction with interleaved contacts along the waveguide axis.After optimizing the junction parameters,we discuss the full simulation of the modulator in order to find a proper trade-off among various figures of merit,such as modulation efficiency,insertion loss,cutoff frequency,optical modulation amplitude,and dissipated energy per bit.Comparison with conventional structures(with lateral p-n junction and/or in rib waveguides without slow light)highlights the importance of combining slow light with the interleaved p-n junction,thanks to the increased overlap between the travelling optical wave and the depletion regions.As a surprising result,the modulator performance is improved over an optical bandwidth that is much wider than the slow-light bandwidth.展开更多
We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would ...We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would enhance the performance and uniformity of silicon optical modulators on a large-scale wafer. We implemented the phase shifter by loading an amorphous silicon strip onto an SOI layer with a vertical PN diode structure. Compared to the conventional lateral PN phase shifter based on half-etched rib waveguides, this phase shifter shows a >1.5 times enhancement of modulation efficiency and provides >20 GHz high-speed operation.展开更多
In this paper,we reported an integrated method to generate ultra-wideband(UWB)pulses of different orders based on a reconfigurable silicon micro-ring resonator-coupled Mach–Zehnder interferometer.Under proper operati...In this paper,we reported an integrated method to generate ultra-wideband(UWB)pulses of different orders based on a reconfigurable silicon micro-ring resonator-coupled Mach–Zehnder interferometer.Under proper operating conditions,the device can produce Fano resonances with a peak-to-valley extinction ratio of above 20 dB.UWB monocycle and doublet signals with picosecond pulse widths are produced when the microring resonator is modulated by square and Gaussian electrical pulses,respectively.With our Fano resonance modulator on silicon photonics,it is promising to foresee versatile on-chip microwave signal generation.展开更多
A fully automatic fail-safe beam shaping system based on a liquid crystal on a silicon spatial light modulator has been implemented in the high-energy kilowatt-average-power nanosecond laser system Bivoj.The shaping s...A fully automatic fail-safe beam shaping system based on a liquid crystal on a silicon spatial light modulator has been implemented in the high-energy kilowatt-average-power nanosecond laser system Bivoj.The shaping system corrects for gain nonuniformity and wavefront aberrations of the front-end of the system.The beam intensity profile and the wavefront at the output of the front-end were successfully improved by shaping.The beam homogeneity defined by the beam quality parameters was improved two to three times.The root-mean-square value of the wavefront was improved more than 10 times.Consequently,the shaped beam from the second preamplifier led to improvement of the beam profile at the output of the first main cryo-amplifier.The shaping system is also capable of creating nonordinary beam shapes,imprinting cross-references into the beam,or masking certain parts of the beam.展开更多
基金National Natural Science Foundation of China(62305303,62205164)Science and Technology Plan Project of Zhejiang(2022C01108)。
文摘Integrated high-linearity modulators are crucial for high dynamic-range microwave photonic(MWP)systems.Conventional linearization schemes usually involve the fine tuning of radio-frequency(RF)power distribution,which is rather inconvenient for practical applications and can hardly be implemented on the integrated photonics chip.In this paper,we propose an elegant scheme to linearize a silicon-based modulator in which the active tuning of RF power is eliminated.The device consists of two carrier-depletion-based Mach-Zehnder modulators(MZMs),which are connected in series by a 1×2 thermal optical switch(OS).The OS is used to adjust the ratio between the modulation depths of the two sub-MZMs.Under a proper ratio,the complementary third-order intermodulation distortion(IMD3)of the two sub-MZMs can effectively cancel each other out.The measured spurious-free dynamic ranges for IMD3 are 131,127,118,110,and 109 d B·Hz^(6∕7)at frequencies of 1,10,20,30,and 40 GHz,respectively,which represent the highest linearities ever reached by the integrated modulator chips on all available material platforms.
基金National Natural Science Foundation of China(62341508,61974099,62022081)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y2022045)+1 种基金Major Key Project of Peng Cheng LaboratoryOpen Project of Tianjin Key Laboratory of Optoelectronic Detection Technology and System(2024LODTS104)。
文摘Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for co-packaged optics,5G,and future 6G applications.In this article,a polarization-insensitive silicon intensity modulator is proposed and experimentally demonstrated based on two-dimensional centrally symmetric gratings,featuring a low polarization-dependent loss of 0.15 dB in minimum and polarization insensitivity of eye diagrams.The device exhibits a low fiber-to-fiber insertion loss of 9 dB and an electro-optic(EO)bandwidth of 49.8 GHz.A modulation speed of up to 224 Gb/s is also demonstrated.
基金the State Key Laboratoryof Particle Detection and Electronics, SKLPDE-ZZ-202002.
文摘Background HEPS-BPIX is a prototype of photon counting pixel detector developed for the High Energy Photon Source.It consists of 16 silicon pixel modules which should be tested individually to ensure the function and performance.Purpose Due to various factors such as the non-uniformity of the processes and voltage drop,the response of each pixel in the silicon pixel module is not identical completely.The response difference of pixels can be minimized by the threshold calibration.This system is developed for the quality test and calibration of the silicon pixel modules.Methods The system consists of a mother board,a control board and a data acquisition(DAQ)system.The mother board provides necessary resources including power supplies and the fanout of calibration signals.Besides,it can be used to test the connectivity by monitoring the power states.The control board reads data out and provides the clock,trigger and configuration data for the silicon pixel module.The DAQ system sends the control commands and receives the readout data through an Ethernet link.Results Compared with the previous readout system,this designed system has a lower noise level and better scanning curves making the calibration more accurate.And it has been successfully applied to the comparison experiments of the through silicon via and wire-bonding silicon pixel modules.Conclusion The results show that this test system can be used to the quality test and calibration of the silicon pixel modules.In addition,the system can be adapted to the measurement of different pixel array detector modules.
基金supported by the National Basic Research Program of China(No.2011CBA00608)the National Natural Science Foundation of China(Nos.61178051,61321063,61335010,61178048,61275169)the National High Technology Research and Development Program of China(Nos.2013AA013602,2013AA031903,2013AA032204)
文摘Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
基金We acknowledge support by the DFG Center for Functional Nanostructuresthe Helmholtz International Research School of Teratronics+3 种基金the Karlsruhe School of Optics and Photonicsthe EU-FP7 projects SOFI(grant 248609)and EURO-FOS(grant 224402)the BMBF joint project MISTRAL,which is funded by the German Ministry of Education and Research under grant 01BL0804and the European Research Council(ERC Starting Grant‘EnTeraPIC’,number 280145).
文摘Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to this frequency.In this study,we demonstrate that this frequency range can be addressed by nanophotonic,silicon-based modulators.We exploit the ultrafast Pockels effect by using the silicon–organic hybrid(SOH)platform,which combines highly nonlinear organic molecules with silicon waveguides.Until now,the bandwidth of these devices was limited by the losses of the radiofrequency(RF)signal and the RC(resistor-capacitor)time constant of the silicon structure.The RF losses are overcome by using a device as short as 500 μm,and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator.Using this method,we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz.Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies.Our device has a voltage–length product of only V_(π)L=11 V mm,which compares favorably with the best silicon-photonic modulators available today.Using cladding materials with stronger nonlinearities,the voltage–length product is expected to improve by more than an order of magnitude.
基金supported in part by the National 973 Program of China (2011CB301700)the National 863 Program of China (2013AA014402)+1 种基金the National Natural Science Foundation of China (NSFC)(61127016,61107041,and 61422508)the Specialized Research Fund for the Doctoral Program of Higher Education of Ministry of Education (20130073130005)
文摘We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.
基金National Program for Support of Top-Notch Young ProfessionalsNational Natural Science Foundation of China(NSFC)(11574001,11274131,61222502)Program for New Century Excellent Talents in University(NCET)(NCET-11-0182)
文摘We comprehensively characterize the transmission performance of m-ary quadrature amplitude modulation(m-QAM) signals through a silicon microring resonator in the experiment. Using orthogonal frequency-division multiplexing based on offset QAM(OFDM/OQAM) which is modulated with m-QAM modulations, we demonstrate low-penalty data transmission of OFDM/OQAM 64-QAM, 128-QAM, 256-QAM, and 512-QAM signals in a silicon microring resonator. The observed optical signal-to-noise ratio(OSNR) penalties are 1.7 dB for 64-QAM,1.7 dB for 128-QAM, and 3.1 dB for 256-QAM at a bit-error rate(BER) of 2 × 10^(-3) and 3.3 dB for 512-QAM at a BER of 2 × 10^(-2). The performance degradation due to the wavelength detuning from the microring resonance is evaluated, showing a wavelength range of ~0.48 nm with BER below 2 × 10^(-3). Moreover, we demonstrate data transmission of 191.2-Gbit/s simultaneous eight wavelength channel OFDM/OQAM 256-QAM signals in a silicon microring resonator, achieving OSNR penalties less than 2 dB at a BER of 2 × 10^(-2).
基金National Natural Science Foundation of China(NSFC)(61575189,61635011)
文摘The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Considering the electrical nonlinearity in simulation,a 32.2 dB degradation in the CDR3(i.e.,the suppression ratio between the fundamental signal and intermodulation distortion)of the modulator was observed at a modulation speed of 12 GHz,and the spurious free dynamic range was simultaneously degraded by 17.4 dB.It was also found that the linearity of the silicon modulator could be improved by reducing the series resistance of the PN junction.The frequency dependence of the linearity due to the electrical nonlinearity was also investigated.
基金European Commission(H2020 Quant ERA ERA-NET Cofund QT project CUSPIDOR,H2020-ICT27-2015 project 688516 COSMICC)Ministero dell’Istruzione,dell’Universitàe della Ricerca+1 种基金Science Foundation Ireland(17/QERA/3472,12/RC/2276_P2)CINECA-ISCRA(Project Slow Mod-HP10C0BQ66)。
文摘Reducing power dissipation in electro-optic modulators is a key step for widespread application of silicon photonics to optical communication.In this work,we design Mach–Zehnder modulators in the silicon-on-insulator platform,which make use of slow light in a waveguide grating and of a reverse-biased p-n junction with interleaved contacts along the waveguide axis.After optimizing the junction parameters,we discuss the full simulation of the modulator in order to find a proper trade-off among various figures of merit,such as modulation efficiency,insertion loss,cutoff frequency,optical modulation amplitude,and dissipated energy per bit.Comparison with conventional structures(with lateral p-n junction and/or in rib waveguides without slow light)highlights the importance of combining slow light with the interleaved p-n junction,thanks to the increased overlap between the travelling optical wave and the depletion regions.As a surprising result,the modulator performance is improved over an optical bandwidth that is much wider than the slow-light bandwidth.
文摘We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would enhance the performance and uniformity of silicon optical modulators on a large-scale wafer. We implemented the phase shifter by loading an amorphous silicon strip onto an SOI layer with a vertical PN diode structure. Compared to the conventional lateral PN phase shifter based on half-etched rib waveguides, this phase shifter shows a >1.5 times enhancement of modulation efficiency and provides >20 GHz high-speed operation.
基金the National Key Research and Development Program(Nos.2019YFB2203203 and 2018YFB2201702)the National Natural Science Foundation of China(NSFC)(Grant Nos.61705129 and 61535006)+1 种基金the Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03)the Open Project Program of Wuhan National Laboratory for Optoelectronics(No.2019WNLOKF004)。
文摘In this paper,we reported an integrated method to generate ultra-wideband(UWB)pulses of different orders based on a reconfigurable silicon micro-ring resonator-coupled Mach–Zehnder interferometer.Under proper operating conditions,the device can produce Fano resonances with a peak-to-valley extinction ratio of above 20 dB.UWB monocycle and doublet signals with picosecond pulse widths are produced when the microring resonator is modulated by square and Gaussian electrical pulses,respectively.With our Fano resonance modulator on silicon photonics,it is promising to foresee versatile on-chip microwave signal generation.
文摘A fully automatic fail-safe beam shaping system based on a liquid crystal on a silicon spatial light modulator has been implemented in the high-energy kilowatt-average-power nanosecond laser system Bivoj.The shaping system corrects for gain nonuniformity and wavefront aberrations of the front-end of the system.The beam intensity profile and the wavefront at the output of the front-end were successfully improved by shaping.The beam homogeneity defined by the beam quality parameters was improved two to three times.The root-mean-square value of the wavefront was improved more than 10 times.Consequently,the shaped beam from the second preamplifier led to improvement of the beam profile at the output of the first main cryo-amplifier.The shaping system is also capable of creating nonordinary beam shapes,imprinting cross-references into the beam,or masking certain parts of the beam.
