In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding...In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding affiliation is:State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China.展开更多
An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response ...An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.展开更多
We improved the adhesion between silicon based insulating materials and epoxy resin composites by adding the adhesion promoter cycloborosiloxane(BSi,cyclo-1,3,3,5,7,7-hexaphenyl-1,5-diboro-3,7-disiloxane).The experime...We improved the adhesion between silicon based insulating materials and epoxy resin composites by adding the adhesion promoter cycloborosiloxane(BSi,cyclo-1,3,3,5,7,7-hexaphenyl-1,5-diboro-3,7-disiloxane).The experimental results show that the addition of BSi in the silicone rubber(SR)system significantly increases the tensile shear strength between BSi and epoxy resin(EP),reaching 309%of the original value.On this basis,the mechanism of BSi to enhance the adhesion effect was discussed.The electron deficient B in BSi attracted the electron rich N and O in EP to enhance the chemical interaction,combined with the interfacial migration behavior in the curing process,to improve the adhesion strength.This study provides the design and synthesis ideas of adhesive aids,and a reference for further exploring the interface mechanism of epoxy resin matrix composites.展开更多
We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelen...We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.展开更多
In order to study the squeeze-strengthening effect of silicone oil-based magnetorheological fluid （MRF）, theoretical basis of disc squeezing brake was presented and a squeezing braking characteristics test-bed for M...In order to study the squeeze-strengthening effect of silicone oil-based magnetorheological fluid （MRF）, theoretical basis of disc squeezing brake was presented and a squeezing braking characteristics test-bed for MRF was designed. Moreover, relevant experiments were carded out and the relationship between squeezing pressure and braking torque was proposed. Experiments results showed that the yield stress of MRF improved linearly with the increasing of external squeezing pressure and the braking torque increased three times when external squeezing pressure achieved 2 MPa.展开更多
Three-dimensional silica fiber reinforced silicon nitride based composites were fabricated by preceramic polymer infiltration and pyrolysis method using perhydropolysilazane as a precursor. The effects of precoating a...Three-dimensional silica fiber reinforced silicon nitride based composites were fabricated by preceramic polymer infiltration and pyrolysis method using perhydropolysilazane as a precursor. The effects of precoating and high temperature calcination on the microstructures of the composites were investigated by scanning electron microscopy. For the composite without a precoating, the fracture surface is plain, and the fiber/matrix interfaces become very unclear after calcination at 1 600 ℃ due to intense interfacial reactions. The composite with a precoating shows tough fracture surface with distinct fiber pull-outs, and the fiber/matrix interfaces are still clear after calcination at 1 600 ℃. It is the appropriate precoating process that contributes to the good interfacial microstructures for the composite.展开更多
A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density rea...A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The ini...A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.展开更多
A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP...A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.展开更多
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective ma...The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.展开更多
The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber fo...The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative-closed thermal system including the influence of quartz window as a spectral filter of lamp emission and a source of emitted thermal radiation. Energy equations for thermal fluxes involved in the heat input and output from the working wafer and quartz window are solved in spectral approximation. The transfer characteristics that are defined by the temperature dependencies of the silicon wafer and the quartz window on the temperature of the heater are accounted. It is shown that temperature bistability in the silicon wafer initiates an induced bistability into the quartz window that does not reveal bistable behavior because of the linear temperature dependence of its total optical characteristics. A possibility for simulation of the quartz window by spectral restriction of the heater radiation is confirmed. The availability of the weak bistable effect in the mode of zero effective heat exchange coefficient of a non-radiative component of the thermal flux removed from the working wafer has been obtained.展开更多
Low cement (LC) and ultra low cement (ULC) bauxite SiC castables are important and high performance monolithic refractories and they have been widely used in iron making and incinerator linings. In this work, rheol...Low cement (LC) and ultra low cement (ULC) bauxite SiC castables are important and high performance monolithic refractories and they have been widely used in iron making and incinerator linings. In this work, rheological behavior of LC and ULC bauxite based SiC containing castables has been studied, including the effects of SiC content and cement content on rheological properties of the castables. The results show that with an increase of SiC and cement content, rheological properties of the castables deteriorate. On the other hand, moderate amounts of SiC (4%～8%) and of calcium aluminate cement (2%～4%) have very slight influence on rheological properties, (i.e. when the castables are sheared their torque and yield torque only slightly increase with the shearing speed). The rheological characteristics of the castables follow Bingham fluid and always show shear thinning behavior.展开更多
In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl)...In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.展开更多
New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the dop...New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.展开更多
In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy...In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.展开更多
This work deals with determining the optimum thickness of the base of an n<sup>+</sup>/p/p<sup>+</sup> silicon solar cell under monochromatic illumination in frequency modulation. The continuit...This work deals with determining the optimum thickness of the base of an n<sup>+</sup>/p/p<sup>+</sup> silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination (<i>λ</i>), with boundary conditions that impose recombination velocities (<i>Sf</i>) and (<i>Sb</i>) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity (<i>Sb</i>). By the graphic technique of comparing the two expressions obtained, depending on the thickness (<i>H</i>) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.展开更多
The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial developm...The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (<em>D</em>(<em>ω</em>, <em>B</em>), in the (<em>p</em>) base leads to maximum values (Dmax) at resonance frequencies (<em>ωr</em>). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, <em>ωr</em> and <em>B</em>, are then established, and will be data for industrial development of low-cost solar cells for specific use.展开更多
文摘In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding affiliation is:State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China.
基金supported by the National Natural Science Foundation of China(No.61804166)
文摘An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.
基金the Core Research Facilities of College of Chemistry and Molecular Sciences and Wuhan University Test Center and Open Fund of Hubei Key Laboratory of Aerospace Power Advanced Technologythe Open Fund of Hubei Key Laboratory of Aerospace Power Advanced Technologythe Special Fund for Industrial and informatization Industry Foundation Reconstruction and High Quality Development of Manufacturing Industry(No.TC220H068)。
文摘We improved the adhesion between silicon based insulating materials and epoxy resin composites by adding the adhesion promoter cycloborosiloxane(BSi,cyclo-1,3,3,5,7,7-hexaphenyl-1,5-diboro-3,7-disiloxane).The experimental results show that the addition of BSi in the silicone rubber(SR)system significantly increases the tensile shear strength between BSi and epoxy resin(EP),reaching 309%of the original value.On this basis,the mechanism of BSi to enhance the adhesion effect was discussed.The electron deficient B in BSi attracted the electron rich N and O in EP to enhance the chemical interaction,combined with the interfacial migration behavior in the curing process,to improve the adhesion strength.This study provides the design and synthesis ideas of adhesive aids,and a reference for further exploring the interface mechanism of epoxy resin matrix composites.
文摘We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.
基金Funded by National Natural Science Foundation of China(No.51475454)National Natural Science Foundation of JiangsuProvince(No.BK20151144)+1 种基金Fundamental Research Funds forthe Central Universities(No.2014QNA38)Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
文摘In order to study the squeeze-strengthening effect of silicone oil-based magnetorheological fluid （MRF）, theoretical basis of disc squeezing brake was presented and a squeezing braking characteristics test-bed for MRF was designed. Moreover, relevant experiments were carded out and the relationship between squeezing pressure and braking torque was proposed. Experiments results showed that the yield stress of MRF improved linearly with the increasing of external squeezing pressure and the braking torque increased three times when external squeezing pressure achieved 2 MPa.
文摘Three-dimensional silica fiber reinforced silicon nitride based composites were fabricated by preceramic polymer infiltration and pyrolysis method using perhydropolysilazane as a precursor. The effects of precoating and high temperature calcination on the microstructures of the composites were investigated by scanning electron microscopy. For the composite without a precoating, the fracture surface is plain, and the fiber/matrix interfaces become very unclear after calcination at 1 600 ℃ due to intense interfacial reactions. The composite with a precoating shows tough fracture surface with distinct fiber pull-outs, and the fiber/matrix interfaces are still clear after calcination at 1 600 ℃. It is the appropriate precoating process that contributes to the good interfacial microstructures for the composite.
文摘A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10804026 and 51101049the Natural Science Foundation of Hebei Province under Grant Nos A2013205101 and A2014205051the Hebei Talent Cultivation Foundation under Grant No A201400119
文摘A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
基金Supported by the National Basic Research Program of China under Grant No 2012CB933501the National Natural Science Foundation of China under Grant Nos 61307033,61274070,61137003 and 61321063
文摘A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61575076 and 61804148)the National Key Research and Development Plan of China(Grant No.2016YFB0402502)
文摘The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.
文摘The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative-closed thermal system including the influence of quartz window as a spectral filter of lamp emission and a source of emitted thermal radiation. Energy equations for thermal fluxes involved in the heat input and output from the working wafer and quartz window are solved in spectral approximation. The transfer characteristics that are defined by the temperature dependencies of the silicon wafer and the quartz window on the temperature of the heater are accounted. It is shown that temperature bistability in the silicon wafer initiates an induced bistability into the quartz window that does not reveal bistable behavior because of the linear temperature dependence of its total optical characteristics. A possibility for simulation of the quartz window by spectral restriction of the heater radiation is confirmed. The availability of the weak bistable effect in the mode of zero effective heat exchange coefficient of a non-radiative component of the thermal flux removed from the working wafer has been obtained.
文摘Low cement (LC) and ultra low cement (ULC) bauxite SiC castables are important and high performance monolithic refractories and they have been widely used in iron making and incinerator linings. In this work, rheological behavior of LC and ULC bauxite based SiC containing castables has been studied, including the effects of SiC content and cement content on rheological properties of the castables. The results show that with an increase of SiC and cement content, rheological properties of the castables deteriorate. On the other hand, moderate amounts of SiC (4%～8%) and of calcium aluminate cement (2%～4%) have very slight influence on rheological properties, (i.e. when the castables are sheared their torque and yield torque only slightly increase with the shearing speed). The rheological characteristics of the castables follow Bingham fluid and always show shear thinning behavior.
文摘In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.
文摘New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.
文摘In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.
文摘This work deals with determining the optimum thickness of the base of an n<sup>+</sup>/p/p<sup>+</sup> silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination (<i>λ</i>), with boundary conditions that impose recombination velocities (<i>Sf</i>) and (<i>Sb</i>) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity (<i>Sb</i>). By the graphic technique of comparing the two expressions obtained, depending on the thickness (<i>H</i>) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.
文摘The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (<em>D</em>(<em>ω</em>, <em>B</em>), in the (<em>p</em>) base leads to maximum values (Dmax) at resonance frequencies (<em>ωr</em>). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, <em>ωr</em> and <em>B</em>, are then established, and will be data for industrial development of low-cost solar cells for specific use.
