Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturiza...Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].展开更多
In a superconductor embedded with a quantum magnetic impurity,the Kondo effect is involved,leading to the competition between the Kondo singlet phase and the superconductivity phase.By means of the natural orbitals re...In a superconductor embedded with a quantum magnetic impurity,the Kondo effect is involved,leading to the competition between the Kondo singlet phase and the superconductivity phase.By means of the natural orbitals renormalization group(NORG)method,we revisit the problem of a quantum magnetic impurity coupled with a conventional s-wave superconductor.Here we present a detailed study focusing on the impurity spin polarization and susceptibility,the Kondo screening cloud,as well as the number and structures of the active natural orbitals(ANOs).In the superconducting phase,the impurity spin is partially polarized,indicating that the impurity remains partially screened by the quantum fluctuations.Furthermore,the impurity spin susceptibility becomes divergent,resulting from the presence of residual local moment formed at the impurity site.Correspondingly,a non-integral(incomplete)Kondo cloud is formed,although the ground state is a spin doublet in this phase.In comparison,the Kondo cloud is complete in the Kondo singlet phase as expected.We also quantify the critical point,where the quantum phase transition from a Kondo singlet phase to a superconducting phase occurs,which is consistent with that in previous works.On the other hand,it is illustrated that only one ANO emerges in both quantum phases.The structures of the ANO,projected into both the real space and momentum space,are distinct in the Kondo singlet phase from that in the superconducting phase.More specifically,in the Kondo singlet phase,the ANO keeps fully active with half-occupied,and the superconducting gap has negligible influence on its structure.On the contrary,in the superconducting phase,the ANO tends to be inactive and its structure changes significantly as the superconducting gap increases.Additionally,our investigation demonstrates that the NORG method is reliable and convenient to solve the quantum impurity problems in superconductors as well,which will promote further theoretical studies on the Kondo problems in such systems using numerical methods.展开更多
Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconduc...Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some paramete...We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase（or decrease） with the decrease（or increase） of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.展开更多
Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS material...Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.展开更多
Negative differential conductance(NDC)serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices.We report the observation of gate-tunable NDC ou...Negative differential conductance(NDC)serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices.We report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor–superconductor devices,i.e.,normal metal–superconducting nanowire–normal metal and normal metal–superconducting nanowire–superconductor devices.Specifically,we study the dependence of the NDCs on back-gate voltage and magnetic field.When the back-gate voltage decreases,these NDCs weaken and evolve into positive differential conductance dips;and meanwhile they move away from the superconducting gap towards high bias voltage,and disappear eventually.In addition,with the increase of magnetic field,the NDCs/dips follow the evolution of the superconducting gap,and disappear when the gap closes.We interpret these observations and reach a good agreement by combining the Blonder–Tinkham–Klapwijk(BTK)model and the critical supercurrent effect in the nanowire,which we call the BTK-supercurrent model.Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor–superconductor devices.展开更多
We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with pwave orbital symmetries and separated by a two-dimensional(2D)semiconductor channel with strong Rashba s...We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with pwave orbital symmetries and separated by a two-dimensional(2D)semiconductor channel with strong Rashba spin–orbit coupling.In triplet superconductors,three types of orbital symmetries are considered.We use Bogoliubov–de Gennes formalism to describe quasiparticle propagations through the junction and the supercurrents are calculated in terms of Andreev reflection coefficients.The features of the variation of the supercurrents with the change of the strength of Rashba spin–orbit coupling are investigated in some detail.It is found that for the three types of orbital symmetries considered,both the magnitudes of supercurrent and the current-phase relations can be manipulated effectively by tuning the strength of Rashba spin–orbit coupling.The interplay of Rashba spin–orbit coupling and Zeeman magnetic field on supercurrent is also investigated in some detail.展开更多
Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologie...Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.展开更多
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a...Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.展开更多
Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respe...Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application ...Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.展开更多
The kagome lattice,characterized by a hexagonal arrangement of corner-sharing equilateral triangles,has garnered significant attention as a fascinating quantum material system that hosts exotic magnetic and electronic...The kagome lattice,characterized by a hexagonal arrangement of corner-sharing equilateral triangles,has garnered significant attention as a fascinating quantum material system that hosts exotic magnetic and electronic properties.The identification and characterization of this class of materials are critical for advancing our understanding of their role in emergent phenomena such as superconductivity.In this study,we developed a high-throughput screening framework for the systematic identification and classification of superconducting materials with kagome lattices,integrating them into established materials databases.Leveraging the Materials Project(MP)database and the MDR Super Con dataset,we analyzed over 150000 inorganic compounds and cross-referenced 26000 known superconductors.Using geometry-based structural modeling and experimental validation,we identified 129 kagome superconductors belonging to 17 distinct structural families,many of which had not previously been recognized as kagome systems.The materials are further classified into three categories in terms of topological flat bands,clean band structures,and coexisting magnetic or charge density wave(CDW)orderings.Based on these results,we established a database comprising 129 kagome superconductors,including the detailed crystallographic,electronic,and superconducting properties of these materials.展开更多
Topological superconductor islands are thought to be the building blocks of topological quantum bits.We produced single-crystalline VSi_(x)islands with well-defined side facets and island size more than 200nm using mo...Topological superconductor islands are thought to be the building blocks of topological quantum bits.We produced single-crystalline VSi_(x)islands with well-defined side facets and island size more than 200nm using molecular beam epitaxy on Si substrate heated to 950℃throughout the growth process.By means of scanning tunneling spectroscopy,we revealed dynamical Coulomb blockade and superconductivity on isolated islands and on islands being connected by superconducting wetting layer respectively.Bi_(2)Te_(3)films were further deposited on VSi_(x)islands.Robust and homogenous proximity effect induced superconductivity was observed on various facets of the Bi_(2)Te_(3)/VSi_(x)hetero-nanostructure.Furthermore,our high-resolution spectroscopy identified Bosonic mode excitations on the topological superconductor islands.These results may establish a playground for the vortex Majorana islands.展开更多
The discovery of high-temperature superconducting materials holds great significance for human industry and daily life.In recent years,research on predicting superconducting transition temperatures using artificial in...The discovery of high-temperature superconducting materials holds great significance for human industry and daily life.In recent years,research on predicting superconducting transition temperatures using artificial intelligence(AI)has gained popularity,with most of these tools claiming to achieve remarkable accuracy.However,the lack of widely accepted benchmark datasets in this field has severely hindered fair comparisons between different AI algorithms and impeded further advancement of these methods.In this work,we present HTSC-2025,an ambient-pressure high-temperature superconducting benchmark dataset.This comprehensive compilation encompasses theoretically predicted superconducting materials discovered by theoretical physicists from 2023 to 2025 based on BCS superconductivity theory,including the renowned X_(2)YH_(6)system,perovskite MXH_(3)system,M_(3)H_(8)system,cage-like BCN-doped metal atomic systems derived from LaH_(10)structural evolution,and two-dimensional honeycomb-structured systems evolving from MgB_(2).In addition,we note a range of approaches inspired by physical intuition for designing high-temperature superconductors,such as hole doping,the introduction of light elements to form strong covalent bonds,and the tuning of spin-orbit coupling.The dataset presented in this paper is openly available at Science DB.The HTSC-2025 benchmark has been open-sourced on Hugging Face at https://huggingface.co/datasets/xiao-qi/HTSC-2025 and will be continuously updated,while the Electronic Laboratory for Material Science platform is available at https://in.iphy.ac.cn/eln/link.html#/124/V2s4.展开更多
We report the crystal growth of a new hole-doped iron-based superconductor Ba(Fe_(0.875)Ti_(0.125))_(2)As_(2)by substituting Ti on the Fe site.The crystals are accidentally obtained in trying to grow Ni doped Ba_(2)Ti...We report the crystal growth of a new hole-doped iron-based superconductor Ba(Fe_(0.875)Ti_(0.125))_(2)As_(2)by substituting Ti on the Fe site.The crystals are accidentally obtained in trying to grow Ni doped Ba_(2)Ti_(2)Fe_(2)As_(4)O.After annealing at 500℃ in vacuum for one week,superconductivity is observed with zero resistance at T_(c0)≈17.5 K,and about 20%diamagnetic volume down to 2 K.While both the small anisotropy of superconductivity and the temperature dependence of normal state resistivity are akin to the electron doped 122-type compounds,the Hall coefficient is positive and similar to the case in hole-doped Ba_(0.9)K_(0.1)Fe_(2)As2.The density functional theory calculations suggest dominated hole pockets contributed by Fe/Ti 3d orbitals.Therefore,the Ba(Fe_(1-x)Ti_(x))_(2)As_(2)system provides a new platform to study the superconductivity with hole doping on the Fe site of iron-based superconductors.展开更多
Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_...Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.展开更多
The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the natu...The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the nature of the complex quantum phenomena in kagome material.Here we report the Fermi surface properties of the novel kagome metal CsTi_(3)Bi_(5)by the de Haas-van Alphen oscillations.The observed oscillations are clear and consist of six principal frequencies ranging from 214 T to 1013 T.The angular dependence of the frequency implies a quasi-two-dimensional electronic structure.In addition,the geometry phase corresponding to 281 T,determined by direct Lifshitz-Kosevich formula fitting,yields a value close toπ,which may indicate a band structure with nontrivial topological property.These results underscore the potential of CsTi_(3)Bi_(5)as a promising platform to explore the interplay between topological order,electronic nematicity,and superconductivity.展开更多
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
文摘Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12104247 and 11934020)。
文摘In a superconductor embedded with a quantum magnetic impurity,the Kondo effect is involved,leading to the competition between the Kondo singlet phase and the superconductivity phase.By means of the natural orbitals renormalization group(NORG)method,we revisit the problem of a quantum magnetic impurity coupled with a conventional s-wave superconductor.Here we present a detailed study focusing on the impurity spin polarization and susceptibility,the Kondo screening cloud,as well as the number and structures of the active natural orbitals(ANOs).In the superconducting phase,the impurity spin is partially polarized,indicating that the impurity remains partially screened by the quantum fluctuations.Furthermore,the impurity spin susceptibility becomes divergent,resulting from the presence of residual local moment formed at the impurity site.Correspondingly,a non-integral(incomplete)Kondo cloud is formed,although the ground state is a spin doublet in this phase.In comparison,the Kondo cloud is complete in the Kondo singlet phase as expected.We also quantify the critical point,where the quantum phase transition from a Kondo singlet phase to a superconducting phase occurs,which is consistent with that in previous works.On the other hand,it is illustrated that only one ANO emerges in both quantum phases.The structures of the ANO,projected into both the real space and momentum space,are distinct in the Kondo singlet phase from that in the superconducting phase.More specifically,in the Kondo singlet phase,the ANO keeps fully active with half-occupied,and the superconducting gap has negligible influence on its structure.On the contrary,in the superconducting phase,the ANO tends to be inactive and its structure changes significantly as the superconducting gap increases.Additionally,our investigation demonstrates that the NORG method is reliable and convenient to solve the quantum impurity problems in superconductors as well,which will promote further theoretical studies on the Kondo problems in such systems using numerical methods.
基金financially supported by the National Key R&D Program of China(2023YFE0210800)National Natural Science Foundation of China(U21A2069,22305088)+4 种基金Natural Science Foundation of Hubei Province(JCZRQN202400929)Shenzhen Science and Technology Program(JCYJ20240813153403005,JCYJ20220818102215033)Guangdong Basic and Applied Basic Research Foundation(2023B1515120041)Open Research Fund of Suzhou Laboratory(SZLAB-1508-2024-ZD013)Guangdong HUST Industrial Technology Research Institute,Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization(2023B1212060012)。
文摘Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.11474106)
文摘We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase（or decrease） with the decrease（or increase） of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.
基金Project supported by the Chinese Ministry of Science and Technology(Grant No.2016YFA0300402)the National Natural Science Foundation of China(Grant No.11574265)+1 种基金the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LR15A040001 and LY14A040007)the Fundamental Research Funds for the Central Universities,China
文摘Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.
基金the National Key Research and Development Program of China(Grant Nos.2022YFA1403400 and 2017YFA0304700)the National Natural Science Foundation of China(Grant Nos.12074417,92065203,92065106,61974138,11774405,11527806,and 12104489)+3 种基金the Strategic Priority Research Program B of Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB33000000)the Synergetic Extreme Condition User Facility sponsored by the National Development and Reform Commissionthe Innovation Program for Quantum Science and Technology(2021ZD0302600)the support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043).
文摘Negative differential conductance(NDC)serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices.We report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor–superconductor devices,i.e.,normal metal–superconducting nanowire–normal metal and normal metal–superconducting nanowire–superconductor devices.Specifically,we study the dependence of the NDCs on back-gate voltage and magnetic field.When the back-gate voltage decreases,these NDCs weaken and evolve into positive differential conductance dips;and meanwhile they move away from the superconducting gap towards high bias voltage,and disappear eventually.In addition,with the increase of magnetic field,the NDCs/dips follow the evolution of the superconducting gap,and disappear when the gap closes.We interpret these observations and reach a good agreement by combining the Blonder–Tinkham–Klapwijk(BTK)model and the critical supercurrent effect in the nanowire,which we call the BTK-supercurrent model.Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor–superconductor devices.
文摘We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with pwave orbital symmetries and separated by a two-dimensional(2D)semiconductor channel with strong Rashba spin–orbit coupling.In triplet superconductors,three types of orbital symmetries are considered.We use Bogoliubov–de Gennes formalism to describe quasiparticle propagations through the junction and the supercurrents are calculated in terms of Andreev reflection coefficients.The features of the variation of the supercurrents with the change of the strength of Rashba spin–orbit coupling are investigated in some detail.It is found that for the three types of orbital symmetries considered,both the magnitudes of supercurrent and the current-phase relations can be manipulated effectively by tuning the strength of Rashba spin–orbit coupling.The interplay of Rashba spin–orbit coupling and Zeeman magnetic field on supercurrent is also investigated in some detail.
基金supported by the National Natural Science Foundation of China(62374150)Natural Science Foundation of Henan(242300421216)+3 种基金C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389)Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008)Beijing Outstanding Young Scientist Program(JWZQ20240102009).
文摘Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
基金Supported by Bissell Distinguished Professor Endowment Fund at UNC-Charlotte。
文摘Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.
文摘Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
基金Supported by the National Key Research and Development Program of China(2021YFB2012601)National Natural Science Foundation of China(12204109)+1 种基金Science and Technology Innovation Plan of Shanghai Science and Technology Commission(21JC1400200)Higher Education Indus⁃try Support Program of Gansu Province(2022CYZC-06)。
文摘Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.
基金supported by the National Key Research and Development Program of China(Grant No.2018YFE0202600)the National Natural Science Foundation of China(Grant No.52272268)+3 种基金the Key Research Program of Frontier SciencesCAS(Grant No.QYZDJ-SSWSLH013)the Informatization Plan of Chinese Academy of Sciences(Grant No.CAS-WX2021SF-0102)the Youth Innovation Promotion Association of CAS(Grant No.2019005)。
文摘The kagome lattice,characterized by a hexagonal arrangement of corner-sharing equilateral triangles,has garnered significant attention as a fascinating quantum material system that hosts exotic magnetic and electronic properties.The identification and characterization of this class of materials are critical for advancing our understanding of their role in emergent phenomena such as superconductivity.In this study,we developed a high-throughput screening framework for the systematic identification and classification of superconducting materials with kagome lattices,integrating them into established materials databases.Leveraging the Materials Project(MP)database and the MDR Super Con dataset,we analyzed over 150000 inorganic compounds and cross-referenced 26000 known superconductors.Using geometry-based structural modeling and experimental validation,we identified 129 kagome superconductors belonging to 17 distinct structural families,many of which had not previously been recognized as kagome systems.The materials are further classified into three categories in terms of topological flat bands,clean band structures,and coexisting magnetic or charge density wave(CDW)orderings.Based on these results,we established a database comprising 129 kagome superconductors,including the detailed crystallographic,electronic,and superconducting properties of these materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.92365302,92065201,12488101,22325203,92265105,12074247,12174252,and 52102336)the Ministry of Science and Technology of China(Grant Nos.2019YFA0308600 and 2020YFA0309000)+1 种基金the Science and Technology Commission of Shanghai Municipality(Grant Nos.2019SHZDZX01,19JC1412701,20QA1405100,24LZ1401000,and LZPY2024-04)the financial support from Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302500)。
文摘Topological superconductor islands are thought to be the building blocks of topological quantum bits.We produced single-crystalline VSi_(x)islands with well-defined side facets and island size more than 200nm using molecular beam epitaxy on Si substrate heated to 950℃throughout the growth process.By means of scanning tunneling spectroscopy,we revealed dynamical Coulomb blockade and superconductivity on isolated islands and on islands being connected by superconducting wetting layer respectively.Bi_(2)Te_(3)films were further deposited on VSi_(x)islands.Robust and homogenous proximity effect induced superconductivity was observed on various facets of the Bi_(2)Te_(3)/VSi_(x)hetero-nanostructure.Furthermore,our high-resolution spectroscopy identified Bosonic mode excitations on the topological superconductor islands.These results may establish a playground for the vortex Majorana islands.
基金supported by the National Natural Science Foundation of China(Grant Nos.62476278,12434009,12204533)the National Key R&D Program of China(Grant No.2024YFA1408601)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302402)。
文摘The discovery of high-temperature superconducting materials holds great significance for human industry and daily life.In recent years,research on predicting superconducting transition temperatures using artificial intelligence(AI)has gained popularity,with most of these tools claiming to achieve remarkable accuracy.However,the lack of widely accepted benchmark datasets in this field has severely hindered fair comparisons between different AI algorithms and impeded further advancement of these methods.In this work,we present HTSC-2025,an ambient-pressure high-temperature superconducting benchmark dataset.This comprehensive compilation encompasses theoretically predicted superconducting materials discovered by theoretical physicists from 2023 to 2025 based on BCS superconductivity theory,including the renowned X_(2)YH_(6)system,perovskite MXH_(3)system,M_(3)H_(8)system,cage-like BCN-doped metal atomic systems derived from LaH_(10)structural evolution,and two-dimensional honeycomb-structured systems evolving from MgB_(2).In addition,we note a range of approaches inspired by physical intuition for designing high-temperature superconductors,such as hole doping,the introduction of light elements to form strong covalent bonds,and the tuning of spin-orbit coupling.The dataset presented in this paper is openly available at Science DB.The HTSC-2025 benchmark has been open-sourced on Hugging Face at https://huggingface.co/datasets/xiao-qi/HTSC-2025 and will be continuously updated,while the Electronic Laboratory for Material Science platform is available at https://in.iphy.ac.cn/eln/link.html#/124/V2s4.
基金supported by the National Key R&D Program of China(Grant Nos.2023YFA1406100,2022YFA1403800,2022YFA1403400,and 2021YFA1400400)the National Natural Science Foundation of China(Grant Nos.12274444 and 12574165)+1 种基金the Chinese Academy of Sciences(Grant No.XDB25000000)financial support from HBNI-RRCAT。
文摘We report the crystal growth of a new hole-doped iron-based superconductor Ba(Fe_(0.875)Ti_(0.125))_(2)As_(2)by substituting Ti on the Fe site.The crystals are accidentally obtained in trying to grow Ni doped Ba_(2)Ti_(2)Fe_(2)As_(4)O.After annealing at 500℃ in vacuum for one week,superconductivity is observed with zero resistance at T_(c0)≈17.5 K,and about 20%diamagnetic volume down to 2 K.While both the small anisotropy of superconductivity and the temperature dependence of normal state resistivity are akin to the electron doped 122-type compounds,the Hall coefficient is positive and similar to the case in hole-doped Ba_(0.9)K_(0.1)Fe_(2)As2.The density functional theory calculations suggest dominated hole pockets contributed by Fe/Ti 3d orbitals.Therefore,the Ba(Fe_(1-x)Ti_(x))_(2)As_(2)system provides a new platform to study the superconductivity with hole doping on the Fe site of iron-based superconductors.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1405100)Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-030)+3 种基金the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures(Grant No.JZHKYPT-2021-08)GS was supported in part by the Innovation Program for Quantum Science and Technology(Grant No.2024ZD03005)the National Natural Science Foundation of China(Grant No.12447101)Chinese Academy of Sciences.
文摘Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2022YFA1403903,2023YFA1406100,2018YFA0305800,and 2022YFA1204100)the National Natural Science Foundation of China(Grant Nos.12304075,11834014,61888102,and 12447101)+2 种基金Chinese Academy of Sciences(Grant Nos.XDB33010200 and 2022YSBR-048)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB28000000)the National Science and Technology Major Project(Grant No.2024ZD0300500)。
文摘The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the nature of the complex quantum phenomena in kagome material.Here we report the Fermi surface properties of the novel kagome metal CsTi_(3)Bi_(5)by the de Haas-van Alphen oscillations.The observed oscillations are clear and consist of six principal frequencies ranging from 214 T to 1013 T.The angular dependence of the frequency implies a quasi-two-dimensional electronic structure.In addition,the geometry phase corresponding to 281 T,determined by direct Lifshitz-Kosevich formula fitting,yields a value close toπ,which may indicate a band structure with nontrivial topological property.These results underscore the potential of CsTi_(3)Bi_(5)as a promising platform to explore the interplay between topological order,electronic nematicity,and superconductivity.
