Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depe...Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.展开更多
The spin valve effect refers to the phenomenon whereby the resistance of a multilayer device depends on the relative orientation of magnetization in its ferromagnetic layers[1].Because the magnetization state encodes ...The spin valve effect refers to the phenomenon whereby the resistance of a multilayer device depends on the relative orientation of magnetization in its ferromagnetic layers[1].Because the magnetization state encodes information in various devices,such as sensors and memory elements,the spin valve effect forms the foundation of many spintronic applications[2].Ferromagnetic semiconductors(FS)can generate spin-polarized currents through their spin-split bands,enabling spin valve behavior in double spin filters[3]or hybrid spin filters[4].展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.62164005).
文摘Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.
基金supported by the National Natural Science Foundation of China(12374121,12304232,T2425029,and 12374129)the National Key Research and Development Program of China(2022YFA1405100)+5 种基金Anhui Provincial Major S&T Project(s202305a12020005)the China Postdoctoral Science Foundation(2023TQ0266,and 2024M753262)the Innovation Program for Quantum Science and Technology(2021ZD0302403)Anhui Provincial Natural Science Foundation(2408085J025)Kenji Watanabe and Takashi Taniguchi acknowledge the support from The Japan Society for the Promotion of Science(JSPS)KAKENHI(21H05233 and 23H02052)World Premier International Research Center Initiative(WPI),MEXT,Japan.
文摘The spin valve effect refers to the phenomenon whereby the resistance of a multilayer device depends on the relative orientation of magnetization in its ferromagnetic layers[1].Because the magnetization state encodes information in various devices,such as sensors and memory elements,the spin valve effect forms the foundation of many spintronic applications[2].Ferromagnetic semiconductors(FS)can generate spin-polarized currents through their spin-split bands,enabling spin valve behavior in double spin filters[3]or hybrid spin filters[4].
