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Simulation of Fast-Recovery Cross-Modulation Characteristics in Semiconductor Optical Amplifier with Assist Light
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作者 Atsushi Matusmoto Kosuke Nishimura +1 位作者 Katsuyuki Utaka Masashi Usami 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期453-454,共2页
We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducin... We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducing a high-power assist light. 展开更多
关键词 simulation of Fast-Recovery Cross-Modulation Characteristics in semiconductor Optical Amplifier with Assist Light as for of XPM SOA in with
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Tailoring Single-Helicity Harmonics via Valley Interference in Monolayer MoS_2 with Counter-Rotating Two-Color Circular Laser Pulses
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作者 Yue Qiao Yupeng Zhang +4 位作者 Shushan Zhou Ping Chen Yong Liu Yujun Yang Jigen Chen 《Chinese Physics Letters》 2026年第2期87-92,共6页
Based on two-dimensional(2D)semiconductor Bloch equation simulations,we demonstrate tunable high-order harmonic generation in monolayer MoS_(2) driven by counter-rotating two-color circular laser pulses.Single-helicit... Based on two-dimensional(2D)semiconductor Bloch equation simulations,we demonstrate tunable high-order harmonic generation in monolayer MoS_(2) driven by counter-rotating two-color circular laser pulses.Single-helicity harmonic generation is achievable:tuning the fundamental-to-second-harmonic field amplitude ratio suppresses left-handed plateau harmonics,yielding dominant right-handed emission.Valley-resolved analysis attributes this to destructive interference between K/K′-valley harmonics along both x and y axes.Further adjustment of the amplitude ratio and field rotation angle reverses the helicity,switching to left-handed dominance and enabling on-demand helicity control.This work deciphers the valley-interference mechanism governing circular harmonic generation in 2D transition-metal dichalcogenides,pioneering a pathway to single-helicity harmonics and solidstate circular attosecond pulses. 展开更多
关键词 two dimensional semiconductor Bloch equation simulations destructive interference monolayer MoS single helicity harmonics helicity control circular attosecond pulses counter rotating two color circular laser pulses tunable high order harmonic generation
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Dark current modeling of thick perovskite X‑ray detectors
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作者 Shan Zhao Xinyuan Du +6 位作者 Jincong Pang Haodi Wu Zihao Song Zhiping Zheng Ling Xu Jiang Tang Guangda Niu 《Frontiers of Optoelectronics》 EI CSCD 2022年第4期19-29,共11页
Metal halide perovskites(MHPs)have demonstrated excellent performances in detection of X-rays and gamma-rays.Most studies focus on improving the sensitivity of single-pixel MHP detectors.However,little work pays atten... Metal halide perovskites(MHPs)have demonstrated excellent performances in detection of X-rays and gamma-rays.Most studies focus on improving the sensitivity of single-pixel MHP detectors.However,little work pays attention to the dark current,which is crucial for the back-end circuit integration.Herein,the requirement of dark current is quantitatively evaluated as low as 10^(−9)A/cm^(2)for X-ray imagers integrated on pixel circuits.Moreover,through the semiconductor device analysis and simulation,we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current(J_(T))and the generation-recombination current(J_(g-r)).The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects.This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. 展开更多
关键词 PEROVSKITE X-ray detection Dark current semiconductor simulation Junction device
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