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Single Photon Scattering in a Pair of Waveguides Coupled by a Whispering-Gallery Resonator Interacting with a Semiconductor Quantum Dot 被引量:2
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作者 程木田 叶根龙 +1 位作者 纵卫卫 马小三 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第2期47-50,共4页
The single photon scattering properties in a pair of waveguides coupled by a whispering-gallery resonator in- teracting with a semiconductor quantum dot are investigated theoretically. The two waveguides support four ... The single photon scattering properties in a pair of waveguides coupled by a whispering-gallery resonator in- teracting with a semiconductor quantum dot are investigated theoretically. The two waveguides support four possible ports for an incident single photon. The quantum dot is considered a V-type system. The incident direction-dependent single photon scattering properties are studied and equal-output probability from the four ports for a single photon incident is discussed. The influences of backscattering between the two modes of the whispering-gallery resonator for incident direction-dependent single photon scattering properties are also pre- sented. 展开更多
关键词 of is from in Single Photon Scattering in a Pair of Waveguides Coupled by a Whispering-Gallery Resonator Interacting with a semiconductor quantum dot mode with by
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Qubits based on semiconductor quantum dots 被引量:1
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作者 张鑫 李海欧 +3 位作者 王柯 曹刚 肖明 郭国平 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期127-139,共13页
Semiconductor quantum dots are promising hosts for qubits to build a quantum processor. In the last twenty years, in- tensive researches have been carried out and diverse kinds of qubits based on different types of se... Semiconductor quantum dots are promising hosts for qubits to build a quantum processor. In the last twenty years, in- tensive researches have been carried out and diverse kinds of qubits based on different types of semiconductor quantum dots were developed. Recent advances prove high fidelity single and two qubit gates, and even prototype quantum algorithms. These breakthroughs motivate further research on realizing a fault tolerant quantum computer. In this paper we review the main principles of various semiconductor quantum dot based qubits and the latest associated experimental results. Finally the future trends of those qubits will be discussed. 展开更多
关键词 semiconductor quantum dot QUBIT quantum computing cavity quantum electrodynamics
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Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field 被引量:1
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作者 LIU Wen-Juan LI Yao-Yi 《Communications in Theoretical Physics》 SCIE CAS CSCD 2008年第12期1417-1421,共5页
The statistic properties of photon emissions from single semiconductor quantum dots with V-type leveldriven by pulses are investigated theoretically.Based on quantum regression theorem and master equations,the dynamic... The statistic properties of photon emissions from single semiconductor quantum dots with V-type leveldriven by pulses are investigated theoretically.Based on quantum regression theorem and master equations,the dynamicequations of the second-order correlation function of the photon emissions are deduced.The calculated results reveal thatthe efficiency of single photon emissions from two orthogonal polarization eigenstates(|x〉and |y〉)reaches the maximumwhen the input pulses area is about π,and the probability of the cross-polarized single photon emission from |x〉and |y〉decreases with increasing of pulse width. 展开更多
关键词 semiconductor quantum dots cross-polarized single photon emission V-type system
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Selective Synthesis and Advanced Characteristic of CdSe Semiconductor Quantum Dots by Aqueous Phase
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作者 王德平 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2006年第1期32-37,共6页
This work mainly investigated the influences of some factors, such as, synthesis methods, precursor alteraatives, and vacuum heat-treating process, etc, on the fluorescent characteristics of the semiconductor quantum ... This work mainly investigated the influences of some factors, such as, synthesis methods, precursor alteraatives, and vacuum heat-treating process, etc, on the fluorescent characteristics of the semiconductor quantum dots synthesized by aqueous phase. The research results indicate that the fluorescent characteristic of water- solution sample prepared from Na2 SO3 precursor was sensitive to water bath heating time, and specially, its photohuninescence spectrum shows the unique phenomenon of double excitation and emission peaks. Meanwhile, the fluorescent characteristic of water- solution sample prepared from NaBH4 precursor is slightly influenced by water bath heating time, and the sugface of CdSe quantum dots could be passivated by the excessive amount of NaBH4 precursor, which results in the effective decrease of surface traps and great enhancement of quantum yield. Furthermore, the fluorescent emission peaks of samples could be sharpened by vacuum heat-treating process, with its spectral full width at half of maximum (FWHM) around 30- 40 run, so the emission peaks become redshifi, of which the intensity greatly increases. 展开更多
关键词 semiconductor quantum dots CDSE synthesis by aqueous phase FLUORESCENCE
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Spin manipulation in semiconductor quantum dots qubit
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作者 Ke Wang Hai-Ou L +2 位作者 Ming Xiao Gang Cao and Guo-Ping Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期1-14,共14页
Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits(qubits). The natural two-energy level of spin states provides a path toward quantum i... Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits(qubits). The natural two-energy level of spin states provides a path toward quantum information processing. In particular, the experimental implementation of spin control with high fidelity provides the possibility of realizing quantum computing. In this review, we will discuss the basic elements of spin qubits in semiconductor quantum dots and summarize some important experiments that have demonstrated the direct manipulation of spin states with an applied electric field and/or magnetic field. The results of recent experiments on spin qubits reveal a bright future for quantum information processing. 展开更多
关键词 semiconductor quantum dot QUBITS SPIN MANIPULATION
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Influence of temperature and LO phonon on the effective mass of bipolarons in polar semiconductor quantum dots
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作者 辛伟 高忠明 +1 位作者 韩超 额尔敦朝鲁 《Optoelectronics Letters》 EI 2012年第6期477-480,共4页
The temperature and LO phonon effects of the bipolaron in polar semiconductor quantum dots (QDs) are studied by using the Tokuda modified linear-combination operator method and the Lee-Low-Pines variational method. ... The temperature and LO phonon effects of the bipolaron in polar semiconductor quantum dots (QDs) are studied by using the Tokuda modified linear-combination operator method and the Lee-Low-Pines variational method. The expressions for the mean number ofLO phonons and the effective mass of the bipolaron are derived. Numerical results show that the mean number of LO phonons of the bipolaron decreases with increasing the temperature and the relative distance r between two electrons, but increases with increasing the electron-phonon coupling strength a The effective mass of the bipolaron M* increases rapidly with increasing the relative distance r between two electrons when r is smaller, and it reaches a maximum at r ≈ 4.05rp, while after that, 34* decreases slowly with increasing r. The effective mass of the bipolaron M' decreases with increasing the temperature. The electron-phonon coupling strength a markedly influences the changes of mean number of LO phonons and the effective mass M* with the relative distance r and the temperature parameter y. 展开更多
关键词 Electron correlations ELECTRON phonon interactions semiconductor quantum dots
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Coherent Single-Electron Transfer in Coupled Semiconductor Quantum Dots Driven by a Few-Cycle Pulse
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作者 杨文星 陈爱喜 +1 位作者 白艳锋 陆加伟 《Communications in Theoretical Physics》 SCIE CAS CSCD 2014年第8期277-282,共6页
We theoretically study the coherent transport of a single electron between the ground states of a double coupled quantum dot structure. The coherent transport is externally controlled by applying a few-cycle pulse wit... We theoretically study the coherent transport of a single electron between the ground states of a double coupled quantum dot structure. The coherent transport is externally controlled by applying a few-cycle pulse with an adjustable carrier-envelope phase(CEP). By simulating numerically, it is shown that there exhibits a strong dependence of electron transport on the CEP and on the arrival time of few-cycle pulse. We provide a simple analytical description for this phenomenon by approximating the quantum dot structure as a three-level Λ-type system. These results also illustrate the potential of utilizing excitation in coupled quantum dots as a means of measuring the CEP of few-cycle pulses. 展开更多
关键词 COHERENT POPULATION transfer FEW-CYCLE pulse semiconductor quantum dotS
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Energy Structure of Two-Dimensional Graphene-Semiconductor Quantum Dot
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作者 Jin Tong Wang Guang-Lin Zhao +3 位作者 Diola Bagayoko Dong-Sheng Guo Jincan Chen Zhiwei Sun 《World Journal of Condensed Matter Physics》 2013年第3期144-151,共8页
Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door... Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door for many new electronic applications. In this paper we proposed a flat 2-dimensional circular graphene-semiconductor quantum dot. We have carried out theoretical studies including deriving the Dirac equation for the electrons inside the graphene-semiconductor quantum dot and solving the equation. We have established the energy structure as a function of the rotational quantum number and the size (radius) of the dot. The energy gap between the energy levels can be tuned with the radius of the quantum dot. It could be useful for quantum computation and single electron device application. 展开更多
关键词 GRAPHENE quantum dot DIRAC EQUATION semiconductor Energy LEVELS
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Quantum teleportation and remote sensing through semiconductor quantum dots affected by pure dephasing
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作者 Seyed Mohammad Hosseiny Jamileh Seyed-Yazdi Milad Norouzi 《Frontiers of physics》 2025年第2期89-102,共14页
Quantum teleportation allows the transmission of quantum states over arbitrary distances and is an applied tool in quantum computation and communication.This paper theoretically addresses the feasibility of quantum te... Quantum teleportation allows the transmission of quantum states over arbitrary distances and is an applied tool in quantum computation and communication.This paper theoretically addresses the feasibility of quantum teleportation based on a single semiconductor quantum dot influenced by pure dephasing through the biexciton cascade decay.We also investigate the idea of remote sensing in quantum teleportation affected by pure dephasing.In particular,we compare the quality of quantum teleportation in single-and two-qubit schemes and show that,within the present model,single-qubit quantum teleportation has a quantum advantage.Finally,to investigate the dynamics of the system,we introduce important witnesses of the non-Markovian dynamics of the system,so that our results may solve outstanding problems in the realization of faithful quantum teleportation over a long time. 展开更多
关键词 quantum teleportation semiconductor quantum dots quantum phase estimation remote sensing
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Improved Peptidyl Linkers for Self-Assembly of Semiconductor Quantum Dot Bioconjugates 被引量:1
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作者 Lorenzo Berti Paola Serena D'Agostino +1 位作者 Kelly Boeneman Igor L.Medintz 《Nano Research》 SCIE EI CSCD 2009年第2期121-129,共9页
We demonstrate improved peptide linkers which allow both conjugation to biomolecules such as DNA and self-assembly with luminescent semiconductor quantum dots.A hexahistidine peptidyl sequence was generated by standar... We demonstrate improved peptide linkers which allow both conjugation to biomolecules such as DNA and self-assembly with luminescent semiconductor quantum dots.A hexahistidine peptidyl sequence was generated by standard solid phase peptide synthesis and modified with the succinimidyl ester of iodoacetamide to yield a thiol-reactive iodoacetyl polyhistidine linker.The reactive peptide was conjugated to dye-labeled thiolated DNA which was utilized as a model target biomolecule.Agarose gel electrophoresis and fluorescence resonance energy transfer analysis confirmed that the linker allowed the DNA to self-assemble with quantum dots via metal-affinity driven coordination.In contrast to previous peptidyl linkers that were based on disulfide exchange and were thus labile to reduction,the reactive haloacetyl chemistry demonstrated here results in a more stable thioether bond linking the DNA to the peptide which can withstand strongly reducing environments such as the intracellular cytoplasm.As thiol groups occur naturally in proteins,can be engineered into cloned proteins,inserted into nascent peptides or added to DNA during synthesis,the chemistry demonstrated here can provide a simple method for self-assembling a variety of stable quantum dot bioconjugates. 展开更多
关键词 semiconductor quantum dot peptide DNA nanocrystal BIOCONJUGATION iodoacetyl SULFHYDRYL polyhistidine metal-affinity fluorescence fluorescence resonance energy transfer(FRET)
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Quantum-dot Semiconductor Optical Amplifiers in State Space Model 被引量:1
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作者 Hussein Taleb Kambiz Abedi Saeed Golmohammadi 《计算物理》 CSCD 北大核心 2013年第4期605-612,共8页
A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along ... A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy. 展开更多
关键词 quantum-dot rate equation model semiconductor optical amplifiers state space model
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PREPARATION AND CHARACTERIZATION OF WATER-SOLUBLE NEAR-INFRARED EMITTING PbS QUANTUM DOTS
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作者 曹洁 李杉 +1 位作者 邓大伟 顾月清 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 2010年第1期81-87,共7页
A new facile method for preparing water-soluble near-infrared (NIR)-emitting PbS quantum dots (QDs) is proposed by using N-acetyl-L-cysteine (NAC, a derivate of L-cysteine) as its stabilizer. The influence of th... A new facile method for preparing water-soluble near-infrared (NIR)-emitting PbS quantum dots (QDs) is proposed by using N-acetyl-L-cysteine (NAC, a derivate of L-cysteine) as its stabilizer. The influence of the precursor Pb/S molar ratio, the Pb/NAC molar ratio, and the pH of original solution on optical properties is explored. Results show that aqueous PbS QDs with strong NIR fluorescence can be prepared and their photoluminescence emission peaks can be tuned from 895 nm to 970 nm. Studies indicate that such aqueous QDs have a potential application in biomedical imaging, especially in noninvasive in vivo fluorescence imaging. In addition, the resulting PbS QDs are further characterized by a transmission electron microscopy and X-ray diffraction analysis. 展开更多
关键词 semiconductor quantum dots (QDs) biomedical imaging N-acetyl-L-cystelne(NAC) NEAR-INFRARED
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Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots 被引量:4
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作者 马红 马国宏 +2 位作者 王文军 高学喜 马洪良 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第4期1280-1285,共6页
Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots (QDs) were investigated by two-colour femtosecond (fs) pump-probe (400/800 nm) and picosecond time-resolved photoluminescence ... Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots (QDs) were investigated by two-colour femtosecond (fs) pump-probe (400/800 nm) and picosecond time-resolved photoluminescence (ps TRPL) experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model. 展开更多
关键词 semiconductor quantum dots Auger-type recombination time-resolved spectroscopy
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Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot 被引量:3
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作者 张彬 闫祖威 《Optoelectronics Letters》 EI 2009年第2期85-88,共4页
Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum do... Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin... 展开更多
关键词 ALUMINUM Binding sites Electric field effects GALLIUM Nuclear energy Potential energy semiconductor quantum dots semiconductor quantum wells Zinc sulfide
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Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition 被引量:2
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作者 佘彦超 罗婷婷 +2 位作者 张蔚曦 冉茂武 王登龙 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第1期589-594,共6页
The linear optical properties and Kerr nonlinear optical response in a four-level loop configuration GaAs/A1GaAs semiconductor quantum dot are analytically studied with the phonon-assisted transition (PAT). It is sh... The linear optical properties and Kerr nonlinear optical response in a four-level loop configuration GaAs/A1GaAs semiconductor quantum dot are analytically studied with the phonon-assisted transition (PAT). It is shown that the changes among a single electromagnetically induced transparency (EIT) window, a double EIT window and the amplification of the probe field in the absorption curves can be controlled by varying the strength of PAT to. Meanwhile, double switching from the anomalous dispersion regime to the normal dispersion regime can likely be achieved by increasing the Rabi energy of the external optical control field. Furthermore, we demonstrate that the group velocity of the probe field can be practically regulated by varying the PAT and the intensity of the optical control field. In the nonlinear case, it is shown that the large SPM and XPM can be achieved as linear absorption vanishes simultaneously, and the PAT can suppress both third-order self-Kerr and the cross-Kerr nonlinear effect of the QD. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength, and may provide some new possibilities for technological applications. 展开更多
关键词 electromagnetically induced transparency phonon-assisted transition semiconductor quantum dot
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Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal 被引量:1
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作者 刘正奇 冯天华 +5 位作者 戴峭峰 吴立军 兰胜 丁才蓉 汪河洲 Gopal Achanta Venu 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期441-447,共7页
This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconduct... This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconductor coreshell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated. The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements. The modification of the spontaneous emission rate, which is reflected in the change of spectral shape and PL lifetime, is clearly observed. While an obvious increase in the PL lifetime is found at most wavelengths in the band gap, a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge. Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal. It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously. This finding provides a simple and effective way for improving the performance of light emitting devices. 展开更多
关键词 spontaneous emission colloidal photonic crystal semiconductor quantum dot time-resolved photoluminescence
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Effects of hydrostatic pressure and external electric field on the impurity binding energy in strained GaN/Al_xGa_(1-x)N spherical quantum dots 被引量:2
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作者 达来木仁 闫祖威 石磊 《Optoelectronics Letters》 EI 2012年第3期224-228,共5页
The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effect... The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work. 展开更多
关键词 Binding energy Electric fields GALLIUM Hydrostatic pressure semiconductor quantum dots
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Modeling and simulation of InAs/GaAs quantum dot lasers 被引量:1
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作者 吕少锋 Ivo Montrosset +2 位作者 Mariangela Gioannini 宋书中 马建伟 《Optoelectronics Letters》 EI 2011年第2期122-125,共4页
Based on the analysis of carrier dynamics in quantum dots (QDs), the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three... Based on the analysis of carrier dynamics in quantum dots (QDs), the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved mo6ulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model, which is helpful for QD lasers research. 展开更多
关键词 Computer simulation Mathematical models MODULATION Optical waveguides REFLECTION semiconductor quantum dots
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Circuit quantum electrodynamics with a quadruple quantum dot 被引量:1
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作者 林霆 李海欧 +1 位作者 曹刚 郭国平 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期150-155,共6页
In this theoretical work,we describe a mechanism for the coupling between a plane structure consisting of four quantum dots and a resonator.We systematically study the dependence of the quadruple coupling strength and... In this theoretical work,we describe a mechanism for the coupling between a plane structure consisting of four quantum dots and a resonator.We systematically study the dependence of the quadruple coupling strength and the qubit decoherence rate and point out the optimized operating position of the hybrid system.According to the transmission given by the input-output theory,the signatures in the resonator spectrum are predicted.Furthermore,based on the parameters already achieved in previous works,we prove that the device described in this paper can achieve the strong coupling limit,i.e.,this approach can be used for system extension under the existing technical conditions.Our results show an effective and promotable approach to couple quantum dot structures in plane with the resonator and propose a meaningful extension method. 展开更多
关键词 semiconductor qubit circuit quantum electrodynamics(QED) semiconductor quantum dot scalable semiconductor-based circuit QED architectures
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Pure spin-current diode based on interacting quantum dot tunneling junction
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作者 Zhengzhong Zhang Min Yu +2 位作者 Rui Bo Chao Wang Hao Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期545-550,共6页
A magnetic field-controlled spin-current diode is theoretically proposed,which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes.By applying a spin bias VS acro... A magnetic field-controlled spin-current diode is theoretically proposed,which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes.By applying a spin bias VS across the junction,a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists.More interestingly,if we applied an external magnetic field on the quantum dot,we observed a clear asymmetry in the spectrum of spin current IS as a function of spin bias,while the charge current always decays to zero in the Coulomb blockade regime.Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias,while the net charge through the device is almost zero.Different from the traditional charge current diode,this design can change the polarity direction and rectifying ability by adjusting the external magnetic field,which is very convenient.This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing. 展开更多
关键词 pure spin current semiconductor quantum dot spin diode
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