Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings （SOC） are studied. The pump is driven by double time-dependent delta potentials, which are for...Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings （SOC） are studied. The pump is driven by double time-dependent delta potentials, which are formed in the interfaces between the semiconductor region and two normal leads. Based on the Floquet scattering approach, our calculations show that various currents can be pumped by couplings of the magnetic fields and the SOCs. Pure spin currents modulated by the arbitrary magnetic fields are discussed in detail.展开更多
With aim to increase set of modern commercial optoelectronic devices we investigate the optical properties of new triple semiconductor-organics-semiconductor nanostructure having two semiconductor layers with organic ...With aim to increase set of modern commercial optoelectronic devices we investigate the optical properties of new triple semiconductor-organics-semiconductor nanostructure having two semiconductor layers with organic layer between. This will be development to majority of modern publications with investigations of only double hybrid nanostructures with one contacting semiconductor layer and one organic layer. It is supposed that the energy of exciton in the first layer is larger than the energy of exciton in organic layer and that the energy of exciton in organic layer is larger in comparison with energy of exciton in second semiconductor layer. It was shown that installation of organics leads to some frequencies at different parameters or to reflection increasing and transmission decrease or to reverted dependence. New recurrent method of inverted calculation for fields is proposed and using this method the frequency dependences of optical characteristics have been calculated. The role of second semiconductor layer in considered triple structure has been estimated.展开更多
由于薄硅膜——绝缘体上硅型横向扩散金属氧化物半导体(Silicon On Insulator Laterally Diffused Metal Oxide Semiconductor,SOI LDMOS)制作在厚度仅有几十到几百纳米的硅膜上,器件在高电压、大电流的作用下,热载流子注入(Hot Carrier...由于薄硅膜——绝缘体上硅型横向扩散金属氧化物半导体(Silicon On Insulator Laterally Diffused Metal Oxide Semiconductor,SOI LDMOS)制作在厚度仅有几十到几百纳米的硅膜上,器件在高电压、大电流的作用下,热载流子注入(Hot Carrier Injection,HCI)效应更为复杂,HCI可靠性受到极大的挑战。研究并探讨了两种结构的15 V SOI LDMOS的热载流子注入劣变机理。采用电荷泵(Charge Pumping)方法测试了界面缺陷产生的特点,当HCI效应发生在沟道区,最大沟道跨导退化明显,饱和驱动电流退化幅度较小,当HCI效应发生在多晶栅边缘,情况刚好相反。通过TCAD仿真研究了器件结构和碰撞电离率分布规律,发现了碰撞电离产生的负电荷对漂移区影响机制,揭示了HCI效应即碰撞电离率最大的位置对SOI LDMOS器件的损伤机理。为薄硅膜SOI LDMOS器件的HCI可靠性设计与优化提供了重要的经验参考。展开更多
基金supported by the Startup Fund for Doctor of Hunan University of Arts and Science (No. 10133004)supported by the Research Foundation of Education Bureau of Hunan Province (No. 14C0807)
文摘Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings （SOC） are studied. The pump is driven by double time-dependent delta potentials, which are formed in the interfaces between the semiconductor region and two normal leads. Based on the Floquet scattering approach, our calculations show that various currents can be pumped by couplings of the magnetic fields and the SOCs. Pure spin currents modulated by the arbitrary magnetic fields are discussed in detail.
文摘With aim to increase set of modern commercial optoelectronic devices we investigate the optical properties of new triple semiconductor-organics-semiconductor nanostructure having two semiconductor layers with organic layer between. This will be development to majority of modern publications with investigations of only double hybrid nanostructures with one contacting semiconductor layer and one organic layer. It is supposed that the energy of exciton in the first layer is larger than the energy of exciton in organic layer and that the energy of exciton in organic layer is larger in comparison with energy of exciton in second semiconductor layer. It was shown that installation of organics leads to some frequencies at different parameters or to reflection increasing and transmission decrease or to reverted dependence. New recurrent method of inverted calculation for fields is proposed and using this method the frequency dependences of optical characteristics have been calculated. The role of second semiconductor layer in considered triple structure has been estimated.
文摘由于薄硅膜——绝缘体上硅型横向扩散金属氧化物半导体(Silicon On Insulator Laterally Diffused Metal Oxide Semiconductor,SOI LDMOS)制作在厚度仅有几十到几百纳米的硅膜上,器件在高电压、大电流的作用下,热载流子注入(Hot Carrier Injection,HCI)效应更为复杂,HCI可靠性受到极大的挑战。研究并探讨了两种结构的15 V SOI LDMOS的热载流子注入劣变机理。采用电荷泵(Charge Pumping)方法测试了界面缺陷产生的特点,当HCI效应发生在沟道区,最大沟道跨导退化明显,饱和驱动电流退化幅度较小,当HCI效应发生在多晶栅边缘,情况刚好相反。通过TCAD仿真研究了器件结构和碰撞电离率分布规律,发现了碰撞电离产生的负电荷对漂移区影响机制,揭示了HCI效应即碰撞电离率最大的位置对SOI LDMOS器件的损伤机理。为薄硅膜SOI LDMOS器件的HCI可靠性设计与优化提供了重要的经验参考。
