A facile procedure for the synthesis ofdithieno[5,6-b：11,12-b＇]coronene-2,3,8,9-tetracarboxylic tetra（2- ethylhexyl）ester （DTCTI＇E-EH） from readily available perylene-3,4,9,10-tetracaroboxylic dianhydride is de...A facile procedure for the synthesis ofdithieno[5,6-b：11,12-b＇]coronene-2,3,8,9-tetracarboxylic tetra（2- ethylhexyl）ester （DTCTI＇E-EH） from readily available perylene-3,4,9,10-tetracaroboxylic dianhydride is described. The electronic properties of DTCTTE-EH were elucidated on the basis of UV-vis spectra, emission spectrum and electrochemical measurement, which demonstrate that DTCTTE is a new class of components for promising semiconducting materials.展开更多
Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication ...Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication typical of organic semiconductors, making them a cutting-edge research focus in the field of semiconductor optoelectronic devices.展开更多
Three fluorinated 1,8-napthalimides were synthesized from acenaphthene.Their structures were characterized by NMR and EI-MS analyses.The structures of compounds 1b and 1c were also confirmed by X-ray diffraction analy...Three fluorinated 1,8-napthalimides were synthesized from acenaphthene.Their structures were characterized by NMR and EI-MS analyses.The structures of compounds 1b and 1c were also confirmed by X-ray diffraction analysis,which showed that they possessed different packing models.Their optoelectronic properties were investigated.The results indicated that all of the naphthalimides possess good solubility and low LUMO energy level,which make them good solution processing candidates in n-type semiconductor.展开更多
Recently,a significant breakthrough has been achieved in the production of high-performance silicon photomultipliers(SiPMs)with epitaxial quenching resistors(EQRs).1 The EQR SiPM packaging production line,developed by...Recently,a significant breakthrough has been achieved in the production of high-performance silicon photomultipliers(SiPMs)with epitaxial quenching resistors(EQRs).1 The EQR SiPM packaging production line,developed by CGN Capital Photonics Technology(Tianjin),has been successfully launched with a product yield exceeding 90%.This breakthrough has sparked new growth in China’s semiconductor optoelectronic device industry.展开更多
Ultrawide bandgap semiconductor optoelectronic synapses can perform high-parallel computing with a low false alarm rate,making them ideal for building deep-ultraviolet(DUV)neuromorphic visual system(NVS).However,the r...Ultrawide bandgap semiconductor optoelectronic synapses can perform high-parallel computing with a low false alarm rate,making them ideal for building deep-ultraviolet(DUV)neuromorphic visual system(NVS).However,the rapid carrier recombination in these optoelectronic synapses results in a poor number of conductance states and a low linear weight update protocol,consequently degrading the image recognition accuracy of DUV NVSs.This work proposes a type of cascade heterojunctions capable of finely tuning the dynamics of photogenerated carriers,utilizing aluminum interdigital electrodes sandwiched between tin-doped Ga_(2)O_(3)and oxygen-deficient hafnium oxide(GTO/Al/HfO_(x))films.The built-in fields at the GTO/HfO_(x)heterojunction and the Al/HfO_(x)hole Schottky junction interfaces facilitate the separation of photogenerated carriers and the subsequent trapping of holes by the oxygen defects in the HfO_(x),respectively.The GTO/Al/HfO_(x)optoelectronic synapses exhibit an ultrahigh responsivity of over 10^(4)A/W and a large photo-to-dark current ratio of 6×10^(5),which results in exceptional synaptic plasticity with unprecedented 4096 conductance states and excellent linearity with a fitting coefficient of 0.992.These attributes enable the GTO/Al/HfO_(x)optoelectronic synapses to execute logical operations with fault-tolerance capability and to achieve high-accuracy fingerprint classification.The innovative cascade heterojunctions design,along with the elucidated carrier dynamics modulation mechanism,facilitates the development of DUV NVSs.展开更多
基金supported by NSFC(Nos.51073124 and 21031006)Research Fund for the Doctoral Program of Higher Education of China(No.20100143120002)Natural Science Foundation of Hubei Province(No.2011CDA102)
文摘A facile procedure for the synthesis ofdithieno[5,6-b：11,12-b＇]coronene-2,3,8,9-tetracarboxylic tetra（2- ethylhexyl）ester （DTCTI＇E-EH） from readily available perylene-3,4,9,10-tetracaroboxylic dianhydride is described. The electronic properties of DTCTTE-EH were elucidated on the basis of UV-vis spectra, emission spectrum and electrochemical measurement, which demonstrate that DTCTTE is a new class of components for promising semiconducting materials.
文摘Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication typical of organic semiconductors, making them a cutting-edge research focus in the field of semiconductor optoelectronic devices.
基金support from National Natural Science Foundation of China(Nos.21072070,21272088)the Program for Academic Leader in Wuhan Municipality(No. 201271130441)+1 种基金supported by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education,the Natural Science Foundation of Hubei Province(No.2013CFB207)Excellent doctorial dissertationcultivation grant from Central China Normal University(No. 2013YBYB60)
文摘Three fluorinated 1,8-napthalimides were synthesized from acenaphthene.Their structures were characterized by NMR and EI-MS analyses.The structures of compounds 1b and 1c were also confirmed by X-ray diffraction analysis,which showed that they possessed different packing models.Their optoelectronic properties were investigated.The results indicated that all of the naphthalimides possess good solubility and low LUMO energy level,which make them good solution processing candidates in n-type semiconductor.
文摘Recently,a significant breakthrough has been achieved in the production of high-performance silicon photomultipliers(SiPMs)with epitaxial quenching resistors(EQRs).1 The EQR SiPM packaging production line,developed by CGN Capital Photonics Technology(Tianjin),has been successfully launched with a product yield exceeding 90%.This breakthrough has sparked new growth in China’s semiconductor optoelectronic device industry.
基金supported by the NSFC for Distinguished Young Scholars(No.52025022)the Scientific Research Innovation Capability Support Project for Young Faculty(ZYGXQNJSKYCXNLZCXM-I10)+2 种基金the NSFC Program(Nos.U23A20568,52372137,52402175,62404038)the China Postdoctoral Science Foundation GZB20240135the Funding from Jilin Province(No.20230402072GH).
文摘Ultrawide bandgap semiconductor optoelectronic synapses can perform high-parallel computing with a low false alarm rate,making them ideal for building deep-ultraviolet(DUV)neuromorphic visual system(NVS).However,the rapid carrier recombination in these optoelectronic synapses results in a poor number of conductance states and a low linear weight update protocol,consequently degrading the image recognition accuracy of DUV NVSs.This work proposes a type of cascade heterojunctions capable of finely tuning the dynamics of photogenerated carriers,utilizing aluminum interdigital electrodes sandwiched between tin-doped Ga_(2)O_(3)and oxygen-deficient hafnium oxide(GTO/Al/HfO_(x))films.The built-in fields at the GTO/HfO_(x)heterojunction and the Al/HfO_(x)hole Schottky junction interfaces facilitate the separation of photogenerated carriers and the subsequent trapping of holes by the oxygen defects in the HfO_(x),respectively.The GTO/Al/HfO_(x)optoelectronic synapses exhibit an ultrahigh responsivity of over 10^(4)A/W and a large photo-to-dark current ratio of 6×10^(5),which results in exceptional synaptic plasticity with unprecedented 4096 conductance states and excellent linearity with a fitting coefficient of 0.992.These attributes enable the GTO/Al/HfO_(x)optoelectronic synapses to execute logical operations with fault-tolerance capability and to achieve high-accuracy fingerprint classification.The innovative cascade heterojunctions design,along with the elucidated carrier dynamics modulation mechanism,facilitates the development of DUV NVSs.
