The efficiency of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics,which cannot be engineered as it is a fundamental mate...The efficiency of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics,which cannot be engineered as it is a fundamental material property.Here,we experimentally demonstrate that ultrafast optical nonlinearities in doped semiconductors can be engineered and can easily exceed those of conventional undoped dielectrics.The electron response of heavily doped semiconductors acquires in fact a hydrodynamic character that introduces nonlocal effects as well as additional nonlinear sources.Our experimental findings are supported by a comprehensive computational analysis based on the hydrodynamic model.In particular,by studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density,we discriminate between hydrodynamic and dielectric nonlinearities.Most importantly,we demonstrate that the maximum nonlinear efficiency as well as its spectral location can be engineered by tuning the doping level.Crucially,the maximum efficiency can be increased by almost two orders of magnitude with respect to the classical dielectric nonlinearity.Having employed the common material platform InGaAs/InP that supports integrated waveguides,our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.展开更多
Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of se...Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of semi- conductor nanostructures. This review presents an overview of techniques to measure the electrical properties of individual and clusters of semiconductor nanostructures using microcopy based techniques or by fabricating metal- lic electrical contacts using lithography. Then it is shown that current-voltage （I-V） characteristics can be used to determine the conduction mechanism in these nanostructures. It has been explained that various material paramet- ers can be extracted from I-V characteristics. The frequently observed conduction mechanism in these nanostruc- tures such as thermally activated conduction, space charge limited current （SCLC）, hopping conduction, Poole Frenkel conduction, Schottky emission and Fowler Nordheim （FN） tunneling are explained in detail.展开更多
As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization ...As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization technique off-axis electron holography is introduced in details, followed by its applications in various semiconductor nanomaterials including group IV, compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli. The advantages and disadvantages of off-axis electron holography in material analysis are discussed, the challenges facing in-situ electron holographic study of semiconductor devices at working conditions are presented, and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.展开更多
GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by...GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.展开更多
ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace.Structural characterization was carried out by transmission electron microscopy （TEM） and select-area el...ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace.Structural characterization was carried out by transmission electron microscopy （TEM） and select-area electron diffraction （SAED）,which shows the presence of zinc blende nucleus in the center of tetrapods while the four branches taking hexagonal wurtzite structure.The electrical transport property of ZnO tetrapods was investigated through an in-situ nanoprobe system.The three branches of a tetrapod serve as source,drain,and ＂gate＂,respectively;while the fourth branch pointing upward works as the force trigger by vertically applying external force downward.The conductivity of each branch of ZnO-tetrapods increases 3-4 times under pressure.In such situation,the electrical current through the branches of ZnO tetrapods can be tuned by external force,and therefore a simple force sensor based on ZnO tetrapods has been demonstrated for the first time.展开更多
In this paper we analyze a long standing problem of the appearance of spurious,non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures.The theory results in a s...In this paper we analyze a long standing problem of the appearance of spurious,non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures.The theory results in a system of coupled eigenvalue PDEs that is usually supplemented by interface boundary conditions that can be derived from a variational formulation of the problem.We analyze such a system for the envelope functions and show that a failure to restrict their Fourier expansion coeffi-cients to small k components would lead to the appearance of non-physical solutions.We survey the existing methodologies to eliminate this difficulty and propose a simple and effective solution.This solution is demonstrated on an example of a two-band model for both bulk materials and low-dimensional nanostructures.Finally,based on the above requirement of small k,we derive a model for nanostructures with cylindrical symmetry and apply the developed model to the analysis of quantum dots using an eight-band model.展开更多
As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparative...As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances.展开更多
ZnO nanoparticles, 10-20 nm in size, were synthesized by heat treatment in air at 500 ℃ for 5 h., using [N,N＇-bis（salicylaldehydo） ethylene diamine]zinc（II）, i.e., Zn（salen）, as precursor, which was obtained b...ZnO nanoparticles, 10-20 nm in size, were synthesized by heat treatment in air at 500 ℃ for 5 h., using [N,N＇-bis（salicylaldehydo） ethylene diamine]zinc（II）, i.e., Zn（salen）, as precursor, which was obtained by a solvent-flee solid-solid reaction. Heat-treated products were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and transmission electron microscopy. Room temperature photoluminescence spectra of ZnO nanostructures are dominated by green emission attributed to oxygen vacancy related donor-acceptor transition.展开更多
文摘The efficiency of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics,which cannot be engineered as it is a fundamental material property.Here,we experimentally demonstrate that ultrafast optical nonlinearities in doped semiconductors can be engineered and can easily exceed those of conventional undoped dielectrics.The electron response of heavily doped semiconductors acquires in fact a hydrodynamic character that introduces nonlocal effects as well as additional nonlinear sources.Our experimental findings are supported by a comprehensive computational analysis based on the hydrodynamic model.In particular,by studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density,we discriminate between hydrodynamic and dielectric nonlinearities.Most importantly,we demonstrate that the maximum nonlinear efficiency as well as its spectral location can be engineered by tuning the doping level.Crucially,the maximum efficiency can be increased by almost two orders of magnitude with respect to the classical dielectric nonlinearity.Having employed the common material platform InGaAs/InP that supports integrated waveguides,our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.
文摘Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of semi- conductor nanostructures. This review presents an overview of techniques to measure the electrical properties of individual and clusters of semiconductor nanostructures using microcopy based techniques or by fabricating metal- lic electrical contacts using lithography. Then it is shown that current-voltage （I-V） characteristics can be used to determine the conduction mechanism in these nanostructures. It has been explained that various material paramet- ers can be extracted from I-V characteristics. The frequently observed conduction mechanism in these nanostruc- tures such as thermally activated conduction, space charge limited current （SCLC）, hopping conduction, Poole Frenkel conduction, Schottky emission and Fowler Nordheim （FN） tunneling are explained in detail.
基金supported by the National Natural Science Foundation of China (51871104)the Fundamental Research Funds for the Central Universities (No.2019kfy RCPY074)。
文摘As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization technique off-axis electron holography is introduced in details, followed by its applications in various semiconductor nanomaterials including group IV, compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli. The advantages and disadvantages of off-axis electron holography in material analysis are discussed, the challenges facing in-situ electron holographic study of semiconductor devices at working conditions are presented, and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.
基金Supported by the National Key Technology Research and Development Program under Grant No 2016YFB0400100the National Basic Research Program of China under Grant No 2012CB619304+4 种基金the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305the National Natural Science Foundation of China under Grant Nos61274003,61422401,51461135002 and 61334009the Key Technology Research of Jiangsu Province under Grant No BE2015111the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Centerthe Research Funds from NJU-Yangzhou Institute of Opto-electronics
文摘GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.
基金supported by the China Scholarship Council (CSC) (No.20083019)Fundamental Research Funds for the Central Universities (Nos.21611603,21611424,and 216113143)+1 种基金Jinan University Start-up Funds (No.50624019)the Knowledge Innovation Program of the Chinese Academy of Sciences (No.KJCX2-YW-M13)
文摘ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace.Structural characterization was carried out by transmission electron microscopy （TEM） and select-area electron diffraction （SAED）,which shows the presence of zinc blende nucleus in the center of tetrapods while the four branches taking hexagonal wurtzite structure.The electrical transport property of ZnO tetrapods was investigated through an in-situ nanoprobe system.The three branches of a tetrapod serve as source,drain,and ＂gate＂,respectively;while the fourth branch pointing upward works as the force trigger by vertically applying external force downward.The conductivity of each branch of ZnO-tetrapods increases 3-4 times under pressure.In such situation,the electrical current through the branches of ZnO tetrapods can be tuned by external force,and therefore a simple force sensor based on ZnO tetrapods has been demonstrated for the first time.
文摘In this paper we analyze a long standing problem of the appearance of spurious,non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures.The theory results in a system of coupled eigenvalue PDEs that is usually supplemented by interface boundary conditions that can be derived from a variational formulation of the problem.We analyze such a system for the envelope functions and show that a failure to restrict their Fourier expansion coeffi-cients to small k components would lead to the appearance of non-physical solutions.We survey the existing methodologies to eliminate this difficulty and propose a simple and effective solution.This solution is demonstrated on an example of a two-band model for both bulk materials and low-dimensional nanostructures.Finally,based on the above requirement of small k,we derive a model for nanostructures with cylindrical symmetry and apply the developed model to the analysis of quantum dots using an eight-band model.
基金This work was supported by the Ministry of Science and Technology of China(No.2018YFA0209102)the National Natural Science Foundation of China(Nos.11727807,51725101,51672050,and 61790581).
文摘As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances.
基金the councils of Iran National Science Foundation and University of Kashan for their unending effort inproviding financial support in this work
文摘ZnO nanoparticles, 10-20 nm in size, were synthesized by heat treatment in air at 500 ℃ for 5 h., using [N,N＇-bis（salicylaldehydo） ethylene diamine]zinc（II）, i.e., Zn（salen）, as precursor, which was obtained by a solvent-flee solid-solid reaction. Heat-treated products were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and transmission electron microscopy. Room temperature photoluminescence spectra of ZnO nanostructures are dominated by green emission attributed to oxygen vacancy related donor-acceptor transition.
